JPS647511B2 - - Google Patents

Info

Publication number
JPS647511B2
JPS647511B2 JP53103945A JP10394578A JPS647511B2 JP S647511 B2 JPS647511 B2 JP S647511B2 JP 53103945 A JP53103945 A JP 53103945A JP 10394578 A JP10394578 A JP 10394578A JP S647511 B2 JPS647511 B2 JP S647511B2
Authority
JP
Japan
Prior art keywords
film
sio
polycrystalline
gate
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53103945A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5530845A (en
Inventor
Juji Tanida
Takaaki Hagiwara
Hideo Sunami
Yokichi Ito
Ryuji Kondo
Shinichi Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10394578A priority Critical patent/JPS5530845A/ja
Publication of JPS5530845A publication Critical patent/JPS5530845A/ja
Publication of JPS647511B2 publication Critical patent/JPS647511B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP10394578A 1978-08-28 1978-08-28 Method for manufacturing fixed memory Granted JPS5530845A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10394578A JPS5530845A (en) 1978-08-28 1978-08-28 Method for manufacturing fixed memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10394578A JPS5530845A (en) 1978-08-28 1978-08-28 Method for manufacturing fixed memory

Publications (2)

Publication Number Publication Date
JPS5530845A JPS5530845A (en) 1980-03-04
JPS647511B2 true JPS647511B2 (enrdf_load_stackoverflow) 1989-02-09

Family

ID=14367570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10394578A Granted JPS5530845A (en) 1978-08-28 1978-08-28 Method for manufacturing fixed memory

Country Status (1)

Country Link
JP (1) JPS5530845A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05185440A (ja) * 1991-12-12 1993-07-27 Matsushita Refrig Co Ltd 連続気泡硬質ウレタンフォーム製造装置および断熱体の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60121772A (ja) * 1983-12-05 1985-06-29 Mitsubishi Electric Corp 不揮発性半導体メモリ装置
JPH0630391B2 (ja) * 1984-09-05 1994-04-20 日本電気株式会社 半導体記憶装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5360182A (en) * 1976-11-11 1978-05-30 Sony Corp Non-volatile memory transistor
JPS6042632B2 (ja) * 1978-02-07 1985-09-24 ソニー株式会社 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05185440A (ja) * 1991-12-12 1993-07-27 Matsushita Refrig Co Ltd 連続気泡硬質ウレタンフォーム製造装置および断熱体の製造方法

Also Published As

Publication number Publication date
JPS5530845A (en) 1980-03-04

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