JPS5892252A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5892252A
JPS5892252A JP56190353A JP19035381A JPS5892252A JP S5892252 A JPS5892252 A JP S5892252A JP 56190353 A JP56190353 A JP 56190353A JP 19035381 A JP19035381 A JP 19035381A JP S5892252 A JPS5892252 A JP S5892252A
Authority
JP
Japan
Prior art keywords
wiring
cutting
insulation film
semiconductor device
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56190353A
Other languages
English (en)
Japanese (ja)
Other versions
JPS611903B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Noriaki Sato
佐藤　典章
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56190353A priority Critical patent/JPS5892252A/ja
Publication of JPS5892252A publication Critical patent/JPS5892252A/ja
Publication of JPS611903B2 publication Critical patent/JPS611903B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56190353A 1981-11-27 1981-11-27 半導体装置の製造方法 Granted JPS5892252A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56190353A JPS5892252A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56190353A JPS5892252A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5892252A true JPS5892252A (ja) 1983-06-01
JPS611903B2 JPS611903B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-01-21

Family

ID=16256774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56190353A Granted JPS5892252A (ja) 1981-11-27 1981-11-27 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5892252A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918658A (ja) * 1982-07-22 1984-01-31 Nec Corp 半導体集積回路装置
JPS6231156A (ja) * 1985-08-02 1987-02-10 Nec Corp 半導体装置及びその製造方法
JPS62119938A (ja) * 1985-11-20 1987-06-01 Mitsubishi Electric Corp 冗長性回路を備えた半導体装置
JPH0249450A (ja) * 1988-03-18 1990-02-19 Digital Equip Corp <Dec> 集積回路を変更する方法
EP0405849A3 (en) * 1989-06-30 1991-05-02 American Telephone And Telegraph Company Severable conductive path in an integrated-circuit device
US6163062A (en) * 1997-10-27 2000-12-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a metallic fuse member and cutting method thereof with laser light

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06310917A (ja) * 1993-04-22 1994-11-04 Mitsubishi Electric Corp マイクロストリップ線路装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5918658A (ja) * 1982-07-22 1984-01-31 Nec Corp 半導体集積回路装置
JPS6231156A (ja) * 1985-08-02 1987-02-10 Nec Corp 半導体装置及びその製造方法
JPS62119938A (ja) * 1985-11-20 1987-06-01 Mitsubishi Electric Corp 冗長性回路を備えた半導体装置
JPH0249450A (ja) * 1988-03-18 1990-02-19 Digital Equip Corp <Dec> 集積回路を変更する方法
EP0405849A3 (en) * 1989-06-30 1991-05-02 American Telephone And Telegraph Company Severable conductive path in an integrated-circuit device
US6163062A (en) * 1997-10-27 2000-12-19 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having a metallic fuse member and cutting method thereof with laser light

Also Published As

Publication number Publication date
JPS611903B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1986-01-21

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