JPS5890731A - 感光性高分子膜形成用プラズマ処理装置 - Google Patents

感光性高分子膜形成用プラズマ処理装置

Info

Publication number
JPS5890731A
JPS5890731A JP56188920A JP18892081A JPS5890731A JP S5890731 A JPS5890731 A JP S5890731A JP 56188920 A JP56188920 A JP 56188920A JP 18892081 A JP18892081 A JP 18892081A JP S5890731 A JPS5890731 A JP S5890731A
Authority
JP
Japan
Prior art keywords
plasma
sample
plasma processing
processing apparatus
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56188920A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0418456B2 (enExample
Inventor
Toshiro Tsumori
利郎 津守
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP56188920A priority Critical patent/JPS5890731A/ja
Publication of JPS5890731A publication Critical patent/JPS5890731A/ja
Publication of JPH0418456B2 publication Critical patent/JPH0418456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
JP56188920A 1981-11-25 1981-11-25 感光性高分子膜形成用プラズマ処理装置 Granted JPS5890731A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56188920A JPS5890731A (ja) 1981-11-25 1981-11-25 感光性高分子膜形成用プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56188920A JPS5890731A (ja) 1981-11-25 1981-11-25 感光性高分子膜形成用プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS5890731A true JPS5890731A (ja) 1983-05-30
JPH0418456B2 JPH0418456B2 (enExample) 1992-03-27

Family

ID=16232192

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56188920A Granted JPS5890731A (ja) 1981-11-25 1981-11-25 感光性高分子膜形成用プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS5890731A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206027A (ja) * 1984-03-30 1985-10-17 Hitachi Ltd プラズマ処理装置
JPS612320A (ja) * 1984-06-15 1986-01-08 Toshiba Corp 試料処理装置
US5024182A (en) * 1988-07-15 1991-06-18 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus having a gas flow settling device
JP2009185316A (ja) * 2008-02-05 2009-08-20 Utec:Kk プラズマｃｖｄ装置及びフッ化有機膜、シランカップリング基を有する有機膜

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5190500A (enExample) * 1975-02-05 1976-08-07
JPS57180134A (en) * 1981-04-30 1982-11-06 Hitachi Ltd Pattern formation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5190500A (enExample) * 1975-02-05 1976-08-07
JPS57180134A (en) * 1981-04-30 1982-11-06 Hitachi Ltd Pattern formation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206027A (ja) * 1984-03-30 1985-10-17 Hitachi Ltd プラズマ処理装置
JPS612320A (ja) * 1984-06-15 1986-01-08 Toshiba Corp 試料処理装置
US5024182A (en) * 1988-07-15 1991-06-18 Mitsubishi Denki Kabushiki Kaisha Thin film forming apparatus having a gas flow settling device
JP2009185316A (ja) * 2008-02-05 2009-08-20 Utec:Kk プラズマｃｖｄ装置及びフッ化有機膜、シランカップリング基を有する有機膜

Also Published As

Publication number Publication date
JPH0418456B2 (enExample) 1992-03-27

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