JPS5885583A - 半導体レ−ザ装置の製造方法 - Google Patents
半導体レ−ザ装置の製造方法Info
- Publication number
- JPS5885583A JPS5885583A JP18309181A JP18309181A JPS5885583A JP S5885583 A JPS5885583 A JP S5885583A JP 18309181 A JP18309181 A JP 18309181A JP 18309181 A JP18309181 A JP 18309181A JP S5885583 A JPS5885583 A JP S5885583A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- laser
- ion implantation
- high resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000005468 ion implantation Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 abstract description 13
- 239000001301 oxygen Substances 0.000 abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- -1 Ga Al Inorganic materials 0.000 abstract description 3
- 230000005669 field effect Effects 0.000 abstract description 2
- 229910052738 indium Inorganic materials 0.000 abstract description 2
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 75
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000007791 liquid phase Substances 0.000 description 6
- 238000005253 cladding Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18309181A JPS5885583A (ja) | 1981-11-17 | 1981-11-17 | 半導体レ−ザ装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18309181A JPS5885583A (ja) | 1981-11-17 | 1981-11-17 | 半導体レ−ザ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5885583A true JPS5885583A (ja) | 1983-05-21 |
| JPS622719B2 JPS622719B2 (enrdf_load_stackoverflow) | 1987-01-21 |
Family
ID=16129595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18309181A Granted JPS5885583A (ja) | 1981-11-17 | 1981-11-17 | 半導体レ−ザ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5885583A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5951586A (ja) * | 1982-09-17 | 1984-03-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS59188377A (ja) * | 1983-04-08 | 1984-10-25 | Mitsubishi Electric Corp | パルス幅変調方式電圧形インバ−タの制御方法 |
| JPH01196888A (ja) * | 1988-02-02 | 1989-08-08 | Matsushita Electric Ind Co Ltd | 光集積回路 |
-
1981
- 1981-11-17 JP JP18309181A patent/JPS5885583A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5951586A (ja) * | 1982-09-17 | 1984-03-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS59188377A (ja) * | 1983-04-08 | 1984-10-25 | Mitsubishi Electric Corp | パルス幅変調方式電圧形インバ−タの制御方法 |
| JPH01196888A (ja) * | 1988-02-02 | 1989-08-08 | Matsushita Electric Ind Co Ltd | 光集積回路 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS622719B2 (enrdf_load_stackoverflow) | 1987-01-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2577330B2 (ja) | 両面ゲ−ト静電誘導サイリスタの製造方法 | |
| JPS6145396B2 (enrdf_load_stackoverflow) | ||
| JPH0645694A (ja) | 注入物をもつ頂部放出型ｖｃｓｅｌ | |
| JPH0221683A (ja) | 半導体レーザ装置 | |
| JPS5885583A (ja) | 半導体レ−ザ装置の製造方法 | |
| JPS58182891A (ja) | 半導体レ−ザおよびその製造方法 | |
| JPS609185A (ja) | 半導体レ−ザ集積回路装置 | |
| JPH01198088A (ja) | 半導体レーザおよびその製造方法 | |
| JP3421140B2 (ja) | 半導体レーザ装置の製造方法，および半導体レーザ装置 | |
| JPH03286567A (ja) | 半導体デバイス及びその製造方法 | |
| JPH05102615A (ja) | 半導体装置およびその製造方法 | |
| US5215929A (en) | Method of manufacturing pn-junction device II-VI compound semiconductor | |
| JPH08125270A (ja) | 積層型半導体レーザ | |
| JP3260502B2 (ja) | 電子放出素子 | |
| JPS6279686A (ja) | 半導体レ−ザおよびその製法 | |
| JPH05160506A (ja) | 半導体レーザおよびその製造方法 | |
| JPH05121722A (ja) | 半導体発光装置およびその製造方法 | |
| JPS58106885A (ja) | 半導体レ−ザ | |
| JPH08111565A (ja) | 半導体光素子および製造方法 | |
| JP2002076515A (ja) | 半導体レーザ装置及びその製造方法 | |
| JPH02256287A (ja) | 半導体発光装置およびその使用方法 | |
| JPH0590700A (ja) | 半導体発光装置およびその製造方法 | |
| JPS5816569A (ja) | 縦形ｍｏｓｆｅｔ | |
| JP2563994B2 (ja) | 半導体レーザ装置およびその製造方法 | |
| JPH0637388A (ja) | 半導体レーザ素子 |