JPS622719B2 - - Google Patents
Info
- Publication number
- JPS622719B2 JPS622719B2 JP18309181A JP18309181A JPS622719B2 JP S622719 B2 JPS622719 B2 JP S622719B2 JP 18309181 A JP18309181 A JP 18309181A JP 18309181 A JP18309181 A JP 18309181A JP S622719 B2 JPS622719 B2 JP S622719B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- high resistivity
- laser
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 23
- 238000005468 ion implantation Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 89
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000002513 implantation Methods 0.000 description 8
- 238000005253 cladding Methods 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- -1 oxygen ions Chemical class 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18309181A JPS5885583A (ja) | 1981-11-17 | 1981-11-17 | 半導体レ−ザ装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18309181A JPS5885583A (ja) | 1981-11-17 | 1981-11-17 | 半導体レ−ザ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5885583A JPS5885583A (ja) | 1983-05-21 |
| JPS622719B2 true JPS622719B2 (enrdf_load_stackoverflow) | 1987-01-21 |
Family
ID=16129595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18309181A Granted JPS5885583A (ja) | 1981-11-17 | 1981-11-17 | 半導体レ−ザ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5885583A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5951586A (ja) * | 1982-09-17 | 1984-03-26 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS59188377A (ja) * | 1983-04-08 | 1984-10-25 | Mitsubishi Electric Corp | パルス幅変調方式電圧形インバ−タの制御方法 |
| JPH0828550B2 (ja) * | 1988-02-02 | 1996-03-21 | 松下電器産業株式会社 | 光集積回路 |
-
1981
- 1981-11-17 JP JP18309181A patent/JPS5885583A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5885583A (ja) | 1983-05-21 |
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