JPS5885569A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5885569A
JPS5885569A JP56183396A JP18339681A JPS5885569A JP S5885569 A JPS5885569 A JP S5885569A JP 56183396 A JP56183396 A JP 56183396A JP 18339681 A JP18339681 A JP 18339681A JP S5885569 A JPS5885569 A JP S5885569A
Authority
JP
Japan
Prior art keywords
mask
gate electrode
wiring pattern
layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56183396A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6354227B2 (enrdf_load_stackoverflow
Inventor
Koichiro Kotani
小谷　紘一郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56183396A priority Critical patent/JPS5885569A/ja
Publication of JPS5885569A publication Critical patent/JPS5885569A/ja
Publication of JPS6354227B2 publication Critical patent/JPS6354227B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56183396A 1981-11-16 1981-11-16 半導体装置の製造方法 Granted JPS5885569A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56183396A JPS5885569A (ja) 1981-11-16 1981-11-16 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56183396A JPS5885569A (ja) 1981-11-16 1981-11-16 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5885569A true JPS5885569A (ja) 1983-05-21
JPS6354227B2 JPS6354227B2 (enrdf_load_stackoverflow) 1988-10-27

Family

ID=16135040

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56183396A Granted JPS5885569A (ja) 1981-11-16 1981-11-16 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5885569A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0498234U (enrdf_load_stackoverflow) * 1991-01-22 1992-08-25

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53125777A (en) * 1977-04-08 1978-11-02 Nec Corp Manufacture for field effect transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53125777A (en) * 1977-04-08 1978-11-02 Nec Corp Manufacture for field effect transistor

Also Published As

Publication number Publication date
JPS6354227B2 (enrdf_load_stackoverflow) 1988-10-27

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