JPS5880872A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS5880872A
JPS5880872A JP56178287A JP17828781A JPS5880872A JP S5880872 A JPS5880872 A JP S5880872A JP 56178287 A JP56178287 A JP 56178287A JP 17828781 A JP17828781 A JP 17828781A JP S5880872 A JPS5880872 A JP S5880872A
Authority
JP
Japan
Prior art keywords
layer
alloy
titanium
molybdenum
tin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56178287A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6211793B2 (en:Method
Inventor
Shuichi Kanamori
金森　周一
Yoshiki Wada
和田　嘉記
Tadashi Matsumoto
忠 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56178287A priority Critical patent/JPS5880872A/ja
Publication of JPS5880872A publication Critical patent/JPS5880872A/ja
Publication of JPS6211793B2 publication Critical patent/JPS6211793B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56178287A 1981-11-09 1981-11-09 半導体装置 Granted JPS5880872A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56178287A JPS5880872A (ja) 1981-11-09 1981-11-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56178287A JPS5880872A (ja) 1981-11-09 1981-11-09 半導体装置

Publications (2)

Publication Number Publication Date
JPS5880872A true JPS5880872A (ja) 1983-05-16
JPS6211793B2 JPS6211793B2 (en:Method) 1987-03-14

Family

ID=16045824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56178287A Granted JPS5880872A (ja) 1981-11-09 1981-11-09 半導体装置

Country Status (1)

Country Link
JP (1) JPS5880872A (en:Method)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60120560A (ja) * 1983-12-05 1985-06-28 Fujitsu Ltd 半導体装置
JPS60242619A (ja) * 1984-05-16 1985-12-02 Nippon Telegr & Teleph Corp <Ntt> 半導体オ−ム性電極の形成方法
JPS6360526A (ja) * 1986-08-30 1988-03-16 Sharp Corp 半導体装置の製造方法
KR20140135786A (ko) * 2012-02-24 2014-11-26 스카이워크스 솔루션즈, 인코포레이티드 화합물 반도체용 구리 상호접속부에 관련된 개선된 구조체, 소자 및 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60120560A (ja) * 1983-12-05 1985-06-28 Fujitsu Ltd 半導体装置
JPS60242619A (ja) * 1984-05-16 1985-12-02 Nippon Telegr & Teleph Corp <Ntt> 半導体オ−ム性電極の形成方法
JPS6360526A (ja) * 1986-08-30 1988-03-16 Sharp Corp 半導体装置の製造方法
KR20140135786A (ko) * 2012-02-24 2014-11-26 스카이워크스 솔루션즈, 인코포레이티드 화합물 반도체용 구리 상호접속부에 관련된 개선된 구조체, 소자 및 방법

Also Published As

Publication number Publication date
JPS6211793B2 (en:Method) 1987-03-14

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