JPS5880872A - Semicondutor device - Google Patents
Semicondutor deviceInfo
- Publication number
- JPS5880872A JPS5880872A JP17828781A JP17828781A JPS5880872A JP S5880872 A JPS5880872 A JP S5880872A JP 17828781 A JP17828781 A JP 17828781A JP 17828781 A JP17828781 A JP 17828781A JP S5880872 A JPS5880872 A JP S5880872A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- alloy
- titanium
- molybdenum
- tin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010936 titanium Substances 0.000 claims abstract description 17
- 239000004020 conductor Substances 0.000 claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 8
- 239000011733 molybdenum Substances 0.000 claims abstract description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 9
- 239000000956 alloy Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 229910017401 Au—Ge Inorganic materials 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 238000001771 vacuum deposition Methods 0.000 abstract description 2
- 230000009545 invasion Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 26
- 239000010931 gold Substances 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241000270666 Testudines Species 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 241000345998 Calamus manan Species 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- MBGCACIOPCILDG-UHFFFAOYSA-N [Ni].[Ge].[Au] Chemical compound [Ni].[Ge].[Au] MBGCACIOPCILDG-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 210000000554 iris Anatomy 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 235000012950 rattan cane Nutrition 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
【発明の詳細な説明】
不発明はガリウム砒素半導体装置において、耐熱性に優
れたオーミック接触用電極構成に関するものである０
カリウム砒素（ＧａＡｓ ）半導体装置の例えば電界幼
果トランジスタＣＦＥＴ）などのｎ形Ｇａ Ａａへのオ
ーミック接触用材料としての金・ゲルマニウム・ニッケ
ル（Ａｕ −Ｇｏ −Ｎｉ ）合金層オーミック接触抵
抗が低く、ボンティングが容易で耐熱性、耐食性。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode structure for ohmic contact with excellent heat resistance in a gallium arsenide semiconductor device. A gold-germanium-nickel (Au-Go-Ni) alloy layer as an ohmic contact material for GaAa has low ohmic contact resistance, easy bonding, heat resistance, and corrosion resistance.
安定性に優れているため＆Ｃ現在最も広く用ｉられてい
るＯ Ａｕ−Ｇａ−Ｎｉ合金を用％Ａたオーミック接触
は、ｎ形ＧａＡ−に対して共晶組成に近いＡｕ−Ｇｏ金
合金蒸着したのち、つづけてＮ１ｔ−蒸着し、水素雰囲
気中で熱処理をして形成されるが一均一で接触抵抗の低
い合金層管形成するためＫ ｔＸ、 Ａｕ ｇ対する−
の量、Ａｕ−Ｇｏに対するＮｌの厚さ、熱１ｓｌｆＦ尋
が微妙に影響することが知られている。Ａｎ−Ｇｏ−Ｎ
ｉ合金がＧａ Ａｓとオーミック接触を形成する際には
、実際Ｋ ｕ Ｎｉ −Ａｓ −Ｇａ ｅ Ａｕ −Ｇ
ａなどの合金層が界面に形成されると言われており電極
金属のＧａ Ａｓ基板への侵食ｔ−最小限におさえるた
めにＡｕ−Ｇ・−Ｎ１合金層の厚さはあま９厚くできな
い。ＧａＡｓＦＥＴの高周波化にともない電極パターン
が微細化されつつあり第１図に示すように、ドレイン１
．ゲート２．ソース３の相互の間隙はきわめて狭いもの
となってきている０４はＧａＡａｊ＆板を示す。しがも
高（力化のために紘電極をＴｏま９薄くできないために
１ ドレインｌおよびソース３の電極金属主としてＡｕ
のＧａＡｓ中への侵入による耐圧低下中短絡不良が起こ
ｐ易＜、ｍ造時における歩留９低下。Due to its excellent stability, the most widely used ohmic contact at present is the Au-Ga-Ni alloy. After that, N1t is deposited and heat treated in a hydrogen atmosphere to form a uniform alloy layer tube with low contact resistance.
It is known that the amount of Nl, the thickness of Nl relative to Au-Go, and the heat of 1 slfF fathom have a subtle effect. An-Go-N
When the i-alloy forms ohmic contact with GaAs, in fact K u Ni - As - Ga e Au - G
It is said that an alloy layer such as a is formed at the interface, and the thickness of the Au-G--N1 alloy layer cannot be made too thick in order to minimize corrosion of the electrode metal to the GaAs substrate. As the frequency of GaAsFET becomes higher, the electrode pattern is becoming finer, and as shown in Figure 1, the drain 1
．． Gate 2. The mutual gap between the sources 3 has become extremely narrow. 04 indicates the GaAaj & plate. However, the electrode metal of the drain l and source 3 is mainly Au.
Short-circuit failure occurs during breakdown voltage drop due to intrusion into GaAs. Yield decreases by 9 when manufacturing.
使ＰＦ３時における信頼度低下の嵌置となってき九〇こ
のように、ｎ杉Ｇａ Ａｓに対するオーミック！ｌ菖用
亀懐に単層の金属を使用することは伽Ａｓｌ’ＥＴの＾
周波比、１ＩｉＩＩ′ｗＬ力化の双方を同時に満足させ
る上で大＠な障害となっていた◎
不＠明はこｎらの問題を解決するために電極に独特の工
夫をこらし、電気的特性音確保しながら１しかも耐熱性
に優Ｃ％高い信頼性が期待できるオーミック接触用亀１
ａｍ造を提供しようとするものでるり、以下図１ｋｌｔ
−用いて本発明の詳細な説明する０
第２図はＧａ Ａｓｓ Ｆ Ｅ Ｔのソースまたはドレ
イン電極における不発明の実施例を示したもので１Ｌ図
中２にアルミニウムなどによるゲート電極、４ｔｍＧａ
Ａｓ基板、５は薄いＡｕ−Ｇｅ−Ｎｉ合金にょるオーミ
ック接触層、６は単層または多層金属による拡散障一層
、７は導体層である。It becomes the insertion of reliability deterioration at the time of PF3.90 In this way, ohmic for nsugi Ga As! The use of a single layer of metal for the turtle shell for irises is a good thing for Asl'ET.
This was a major obstacle in satisfying both the frequency ratio and 1IiII'wL power at the same time. ◎ To solve these problems, Fujiaki devised a unique method for the electrode and improved its electrical characteristics. Ohmic contact turtle 1 that can be expected to have high reliability while ensuring sound and excellent heat resistance.
Ruri is trying to provide AM construction, the figure below is 1klt
- Detailed explanation of the present invention using Figure 2 shows an embodiment of the non-inventive source or drain electrode of a Ga Ass FET.
An As substrate, 5 an ohmic contact layer made of a thin Au-Ge-Ni alloy, 6 a diffusion barrier layer made of a single or multilayer metal, and 7 a conductor layer.
、パ。, Pa.
拡散障壁ＮＩＡＧは、導体層７にムｕｔ−用いる場合に
はチタン（Ｔｉ）／ｍ化チタン（’Ｉ’ＩＮ）／チタン
（Ｔｉ）１７ｔはモリブデン（Ｍｏ ） ／窒化モリブ
デン（ＭｏＮ）／モリブテン（Ｍｏ ）の３層構造が例
として考えらｎる。When the diffusion barrier NIAG is used in the conductor layer 7, titanium (Ti)/titanium nitride ('I'IN)/titanium (Ti) 17t is molybdenum (Mo)/molybdenum nitride (MoN)/molybdenum ( The three-layer structure of Mo) can be considered as an example.
ｔた、導体層にアルミニウム（Ａｔ）ｋ用いる場合には
、拡散障壁層はＴｉＮ／ＴｉｅたはＭｏＮ／ Ｍｏの２
層構造とすること１できる。いすｎの場合も、それ程高
い耐熱性が要求されない場合に鉱、拡散障壁層６にＴｌ
、Ｍｏなどの単層金輌ｔＪ＋Ｉｖｈることもできる。In addition, when aluminum (At) is used for the conductor layer, the diffusion barrier layer is made of TiN/Tie or MoN/Mo2.
It is possible to have a layered structure. In the case of Isun, if high heat resistance is not required, Tl is added to the diffusion barrier layer 6.
, a single layer metal such as Mo can also be used.
つぎに、Ｗ、他形成の手順の一例としては、まず１２ｗ
ｔ％楊度のＧｏ ｆ含むＡｕ−Ｇｅ合金とＮ１Ｙｒ真空
蒸着法によりそれぞれ４５０λ、５０Ａの厚さに付着さ
せ、水素炉中で５００℃、３０秒の熱処理七粁ないｔＡ
ｕ−Ｇｏ−Ｎｉ合金のオーミック接触層を形成する。Next, as an example of the procedure for forming W and others, first, 12w
An Au-Ge alloy containing t% of GoF and N1Yr were deposited to a thickness of 450λ and 50A by vacuum evaporation method, respectively, and heat-treated at 500℃ for 30 seconds in a hydrogen furnace for 7 minutes.
Form an ohmic contact layer of u-Go-Ni alloy.
つづいて、スパッタリング法によりＴｉ 、 ＴＩＮ
、 Ｔｉ會それぞれ厚さ１００λ、２００λ、５ｏＯ＾
に順次形成させる。このときＴｉＮはターゲットにＴｉ
を用いアルゴン、窒素混合ガス中で反応性スパッタリン
グ法にエリ形成させることもできる。最後にＡｕの導体
層ｔ−電気めっき法により約１／Ｊｍ形成する０Ａｕ−
Ｇｅ−Ｎｉ合金層形成のための熱処理は金めつき工程終
了後に行なうことも可能であり、これにょ９工Ｓは著し
く簡略化される◎
以上のように１本発明のオーミック接触用電極の構造上
の特徴は、従来導体層も兼ねていた厚いＡｕ−Ｇ・−Ｎ
１合金層の厚さを、電気的なオ、−ミツ２．り恢触ｔと
るに必要な厚さを残して十分薄くシ、厚ｉ導体層と拡散
障壁層を介して分離したことＩ／ｃＴ。Subsequently, Ti, TIN was formed by sputtering method.
, Ti thickness 100λ, 200λ, 5oO^ respectively
are formed sequentially. At this time, TiN is the target
The edge can also be formed by reactive sputtering in a mixed gas of argon and nitrogen. Finally, a conductor layer t of Au is formed by about 1/Jm by electroplating.
The heat treatment for forming the Ge-Ni alloy layer can also be performed after the gold plating process is completed, and this greatly simplifies the 9-step process. As described above, the structure of the ohmic contact electrode of the present invention The above feature is due to the thick Au-G/-N layer, which conventionally also served as a conductor layer.
1. The thickness of the alloy layer is determined by the electrical resistance.2. The I/cT is made thin enough, leaving the necessary thickness for the reconstitution, and is separated through a thick conductor layer and a diffusion barrier layer.
９、これにより電極金属の半導体中への侵入を最小＠に
とどめ％高温における熱的不安定性を着しく減少するこ
とができる〇
本発明のオーミック接触用電極構成はＧＩ Ａｍ ＦＥ
ＴやＩＣのソースおよびドレイン電極のはか、ガンダイ
オード、インバットダイオード、などにも応用すること
が可能である。また１本電極構成扛、オーミック接触用
Ａｕ−Ｇ・−Ｎ１合金層と導体層と拡散ｗｍ層によ多分
離してｉるために１導体層の材料゛選択の自由度が大で
あり ｓ ＧａＡｓ Ｉ Ｃｔ−ゲート電極を含めア／
Ｉ／ ｉ ＝ラム系の２謙で統一することも可能である
。9. This makes it possible to minimize the penetration of the electrode metal into the semiconductor and significantly reduce thermal instability at high temperatures. The ohmic contact electrode configuration of the present invention is GI Am FE
It can also be applied to source and drain electrodes of transistors and ICs, Gunn diodes, invat diodes, and the like. In addition, since the single electrode structure is multi-separated into the Au-G/-N1 alloy layer for ohmic contact, the conductor layer, and the diffusion layer, there is a great degree of freedom in selecting the material for the single conductor layer. GaAs I Ct - including gate electrode
It is also possible to unify I/i = 2 ken of Ram system.
以上説明したように１本発明にょるオーイック厚い導体
層と拡散障壁層で分離した構造としているためｒｃｓ＊
極金属の半導体中への侵入が殆んどなく耐圧劣化や短絡
不良などを起こすことがなくなるために高温熱処１ＩＩ
ｒｃよる歩留りが同上するはρ島、夾便用時における０
１軸性が著しく同上する利点がある。As explained above, since the structure according to the present invention is separated by the thick conductor layer and the diffusion barrier layer, the rcs*
High-temperature heat treatment 1II is used because there is almost no penetration of polar metal into the semiconductor and no breakdown voltage deterioration or short circuit failure occurs.
The yield by rc is the same as the above, ρ island, 0 when using consignment.
It has the advantage of being significantly uniaxial.
第１図は従来ｖＧａＡｓ Ｆ）ＣＴの断面概略図、籐２
図ａＧａＡｓＦＥＴのソースまた蝶ドレイン電極におり
る不発−の実施例を示す。Figure 1 is a cross-sectional schematic diagram of a conventional vGaAs F) CT, rattan 2
Figure a shows an example of a misfire that falls on the source or drain electrode of a GaAs FET.
Claims (1)
−Ｇｅ−Ｎｉ合金層を接触させ、さらにオーζツク峯触
層の上部に辱い導体層ｔ＊しかつ、オーミック恢触鳩と
前記の導体層の間に電化チタンまたは富化モリブデンを
含む拡散障壁層をもつ構造の電極を有すること１を特徴
とする半導体装置０Au for ohmic contact with n-sugi gallium arsenide substrate
- The Ge-Ni alloy layer is in contact with the conductor layer t* on top of the ohmic contact layer, and the diffusion containing electrified titanium or enriched molybdenum is provided between the ohmic contact layer and the conductor layer. Semiconductor device 0 characterized by having an electrode having a structure with a barrier layer 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17828781A JPS5880872A (en) | 1981-11-09 | 1981-11-09 | Semicondutor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17828781A JPS5880872A (en) | 1981-11-09 | 1981-11-09 | Semicondutor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5880872A true JPS5880872A (en) | 1983-05-16 |
| JPS6211793B2 JPS6211793B2 (en) | 1987-03-14 |
Family
ID=16045824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17828781A Granted JPS5880872A (en) | 1981-11-09 | 1981-11-09 | Semicondutor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5880872A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60120560A (en) * | 1983-12-05 | 1985-06-28 | Fujitsu Ltd | Semiconductor device |
| JPS60242619A (en) * | 1984-05-16 | 1985-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Formation of semiconductor ohmic electrode |
| JPS6360526A (en) * | 1986-08-30 | 1988-03-16 | Sharp Corp | Manufacture of semiconductor device |
| KR20140135786A (en) * | 2012-02-24 | 2014-11-26 | 스카이워크스 솔루션즈, 인코포레이티드 | Improved structures, devices and methods related to copper interconnects for compound semiconductors |
-
1981
- 1981-11-09 JP JP17828781A patent/JPS5880872A/en active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60120560A (en) * | 1983-12-05 | 1985-06-28 | Fujitsu Ltd | Semiconductor device |
| JPH0216589B2 (en) * | 1983-12-05 | 1990-04-17 | Fujitsu Ltd | |
| JPS60242619A (en) * | 1984-05-16 | 1985-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Formation of semiconductor ohmic electrode |
| JPH0586853B2 (en) * | 1984-05-16 | 1993-12-14 | Nippon Telegraph & Telephone | |
| JPS6360526A (en) * | 1986-08-30 | 1988-03-16 | Sharp Corp | Manufacture of semiconductor device |
| KR20140135786A (en) * | 2012-02-24 | 2014-11-26 | 스카이워크스 솔루션즈, 인코포레이티드 | Improved structures, devices and methods related to copper interconnects for compound semiconductors |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6211793B2 (en) | 1987-03-14 |
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