JPS5880831A - 半導体装置用基板の製造方法 - Google Patents

半導体装置用基板の製造方法

Info

Publication number
JPS5880831A
JPS5880831A JP56180233A JP18023381A JPS5880831A JP S5880831 A JPS5880831 A JP S5880831A JP 56180233 A JP56180233 A JP 56180233A JP 18023381 A JP18023381 A JP 18023381A JP S5880831 A JPS5880831 A JP S5880831A
Authority
JP
Japan
Prior art keywords
substrate
layer
region
insulating film
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56180233A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0335822B2 (enExample
Inventor
Seiichiro Kawamura
河村　誠一郎
Hajime Kamioka
上岡　元
Tsutomu Ogawa
力 小川
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56180233A priority Critical patent/JPS5880831A/ja
Publication of JPS5880831A publication Critical patent/JPS5880831A/ja
Publication of JPH0335822B2 publication Critical patent/JPH0335822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
JP56180233A 1981-11-10 1981-11-10 半導体装置用基板の製造方法 Granted JPS5880831A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56180233A JPS5880831A (ja) 1981-11-10 1981-11-10 半導体装置用基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56180233A JPS5880831A (ja) 1981-11-10 1981-11-10 半導体装置用基板の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP10732489A Division JPH03114219A (ja) 1989-04-28 1989-04-28 半導体装置用基板の製造方法

Publications (2)

Publication Number Publication Date
JPS5880831A true JPS5880831A (ja) 1983-05-16
JPH0335822B2 JPH0335822B2 (enExample) 1991-05-29

Family

ID=16079697

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56180233A Granted JPS5880831A (ja) 1981-11-10 1981-11-10 半導体装置用基板の製造方法

Country Status (1)

Country Link
JP (1) JPS5880831A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012722A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 薄膜結晶形成法
JPS6017911A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6017910A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6233417A (ja) * 1985-08-07 1987-02-13 Nec Corp 半導体装置の製造方法
JPH03114219A (ja) * 1989-04-28 1991-05-15 Fujitsu Ltd 半導体装置用基板の製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658269A (en) * 1979-10-17 1981-05-21 Seiko Epson Corp Mos type semiconductor device
JPS5678495A (en) * 1979-11-29 1981-06-27 Toshiba Corp Preparation of base

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658269A (en) * 1979-10-17 1981-05-21 Seiko Epson Corp Mos type semiconductor device
JPS5678495A (en) * 1979-11-29 1981-06-27 Toshiba Corp Preparation of base

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6012722A (ja) * 1983-07-01 1985-01-23 Agency Of Ind Science & Technol 薄膜結晶形成法
JPS6017911A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6017910A (ja) * 1983-07-11 1985-01-29 Agency Of Ind Science & Technol 半導体装置の製造方法
JPS6233417A (ja) * 1985-08-07 1987-02-13 Nec Corp 半導体装置の製造方法
JPH03114219A (ja) * 1989-04-28 1991-05-15 Fujitsu Ltd 半導体装置用基板の製造方法

Also Published As

Publication number Publication date
JPH0335822B2 (enExample) 1991-05-29

Similar Documents

Publication Publication Date Title
JPH0454370B2 (enExample)
JP2003086604A (ja) 薄膜半導体装置及びその基板ならびにその製造方法
JPS5939790A (ja) 単結晶の製造方法
KR100317623B1 (ko) 실리콘 박막을 결정화하는 방법과 이를 이용하여 제조되는 박막트랜지스터 및 그 제조방법
JP4203141B2 (ja) 非晶質シリコン層の結晶化方法及びこれを使用する薄膜トランジスターの製造方法
US6558989B1 (en) Method for crystallizing silicon film and thin film transistor and fabricating method using the same
JPS5880831A (ja) 半導体装置用基板の製造方法
JPS6342417B2 (enExample)
JPS6147627A (ja) 半導体装置の製造方法
JPS5939791A (ja) 単結晶の製造方法
JPS58184720A (ja) 半導体膜の製造方法
JPH01264215A (ja) 半導体装置の製造方法
JPH03114219A (ja) 半導体装置用基板の製造方法
JPH03159116A (ja) 多結晶半導体薄膜の熱処理方法
JPS5856457A (ja) 半導体装置の製造方法
JPH0413848B2 (enExample)
JPH043459A (ja) 積層型半導体装置の製造方法
JPS63265464A (ja) 半導体装置の製造方法
JPH0573324B2 (enExample)
JPS5880830A (ja) 半導体装置用基板の製造方法
JPS63300510A (ja) 積層型半導体装置
JPH0319210A (ja) 半導体装置の製造方法
JPS5893217A (ja) 半導体結晶膜の製造方法
JPH04192322A (ja) 結晶物品の形成方法
JPH01161711A (ja) 半導体装置の製造方法