JPS587862A - バイポ−ラ型トランジスタ−構造体及びその製造方法 - Google Patents

バイポ−ラ型トランジスタ−構造体及びその製造方法

Info

Publication number
JPS587862A
JPS587862A JP57064845A JP6484582A JPS587862A JP S587862 A JPS587862 A JP S587862A JP 57064845 A JP57064845 A JP 57064845A JP 6484582 A JP6484582 A JP 6484582A JP S587862 A JPS587862 A JP S587862A
Authority
JP
Japan
Prior art keywords
region
layer
base
substrate
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57064845A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0371772B2 (enExample
Inventor
ランド−ル・デユアン・アイザツク
タツク・ハング・ニング
ポ−ル・マイケル・ソロモン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS587862A publication Critical patent/JPS587862A/ja
Publication of JPH0371772B2 publication Critical patent/JPH0371772B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP57064845A 1981-06-30 1982-04-20 バイポ−ラ型トランジスタ−構造体及びその製造方法 Granted JPS587862A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28014281A 1981-06-30 1981-06-30
US280142 1981-06-30

Publications (2)

Publication Number Publication Date
JPS587862A true JPS587862A (ja) 1983-01-17
JPH0371772B2 JPH0371772B2 (enExample) 1991-11-14

Family

ID=23071863

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57064845A Granted JPS587862A (ja) 1981-06-30 1982-04-20 バイポ−ラ型トランジスタ−構造体及びその製造方法

Country Status (1)

Country Link
JP (1) JPS587862A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139468A (ja) * 1981-12-31 1983-08-18 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置およびその製造方法
JPS58166766A (ja) * 1982-03-27 1983-10-01 Fujitsu Ltd 半導体装置の製造方法
JPS61131562A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd 半導体装置の製造方法
JPS61255064A (ja) * 1985-05-07 1986-11-12 Nippon Telegr & Teleph Corp <Ntt> バイポーラトランジスタの製造方法
DE3825701A1 (de) * 1987-07-29 1989-02-09 Toshiba Kawasaki Kk Verfahren zur herstellung eines bipolaren transistors
DE3915634A1 (de) * 1988-05-16 1989-11-30 Toshiba Kawasaki Kk Bipolarer hochgeschwindigkeitstransistor und verfahren zur herstellung des transistors unter verwendung der polysilizium-selbstausrichtungstechnik
DE3940394A1 (de) * 1988-12-06 1990-06-07 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Verfahren zum herstellen einer halbleitervorrichtung
US7568914B2 (en) 2006-07-10 2009-08-04 Fujitsu Hitachi Plasma Display Limited Heat treatment apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470776A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5470776A (en) * 1977-11-16 1979-06-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139468A (ja) * 1981-12-31 1983-08-18 エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン 半導体装置およびその製造方法
JPS58166766A (ja) * 1982-03-27 1983-10-01 Fujitsu Ltd 半導体装置の製造方法
JPS61131562A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd 半導体装置の製造方法
JPS61255064A (ja) * 1985-05-07 1986-11-12 Nippon Telegr & Teleph Corp <Ntt> バイポーラトランジスタの製造方法
DE3825701A1 (de) * 1987-07-29 1989-02-09 Toshiba Kawasaki Kk Verfahren zur herstellung eines bipolaren transistors
US5100813A (en) * 1987-07-29 1992-03-31 Kabushiki Kaisha Toshiba Method of manufacturing bipolar transistor
DE3915634A1 (de) * 1988-05-16 1989-11-30 Toshiba Kawasaki Kk Bipolarer hochgeschwindigkeitstransistor und verfahren zur herstellung des transistors unter verwendung der polysilizium-selbstausrichtungstechnik
DE3915634C2 (de) * 1988-05-16 1997-09-11 Toshiba Kawasaki Kk Verfahren zur Herstellung eines Bipolar-Transistors mit einer miniaturisierten Emitterschicht
DE3940394A1 (de) * 1988-12-06 1990-06-07 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Verfahren zum herstellen einer halbleitervorrichtung
DE3940394C2 (de) * 1988-12-06 1997-08-28 Toshiba Kawasaki Kk Verfahren zur Herstellung eines Bipolartransistors
US7568914B2 (en) 2006-07-10 2009-08-04 Fujitsu Hitachi Plasma Display Limited Heat treatment apparatus

Also Published As

Publication number Publication date
JPH0371772B2 (enExample) 1991-11-14

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