JPS5871717A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS5871717A
JPS5871717A JP56169997A JP16999781A JPS5871717A JP S5871717 A JPS5871717 A JP S5871717A JP 56169997 A JP56169997 A JP 56169997A JP 16999781 A JP16999781 A JP 16999781A JP S5871717 A JPS5871717 A JP S5871717A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
transformer
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56169997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH027528B2 (enrdf_load_stackoverflow
Inventor
Makio Uchida
内田　万亀夫
Takashi Masuda
孝 増田
Katsuji Horiguchi
勝治 堀口
Hiroshi Yoshimura
寛 吉村
Ryota Kasai
笠井　良太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Original Assignee
Hitachi Ltd
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph and Telephone Corp filed Critical Hitachi Ltd
Priority to JP56169997A priority Critical patent/JPS5871717A/ja
Publication of JPS5871717A publication Critical patent/JPS5871717A/ja
Publication of JPH027528B2 publication Critical patent/JPH027528B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
JP56169997A 1981-10-26 1981-10-26 半導体集積回路装置 Granted JPS5871717A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56169997A JPS5871717A (ja) 1981-10-26 1981-10-26 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56169997A JPS5871717A (ja) 1981-10-26 1981-10-26 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5871717A true JPS5871717A (ja) 1983-04-28
JPH027528B2 JPH027528B2 (enrdf_load_stackoverflow) 1990-02-19

Family

ID=15896670

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56169997A Granted JPS5871717A (ja) 1981-10-26 1981-10-26 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5871717A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038924A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd Ｃｍｏｓセレクタ回路
JPS6070817A (ja) * 1983-09-28 1985-04-22 Hitachi Ltd 論理回路
JPH01125017A (ja) * 1987-11-09 1989-05-17 Mitsubishi Electric Corp 半導体装置
WO1997008752A1 (en) * 1995-08-25 1997-03-06 Hitachi, Ltd. Mis semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6038924A (ja) * 1983-08-12 1985-02-28 Hitachi Ltd Ｃｍｏｓセレクタ回路
JPS6070817A (ja) * 1983-09-28 1985-04-22 Hitachi Ltd 論理回路
JPH01125017A (ja) * 1987-11-09 1989-05-17 Mitsubishi Electric Corp 半導体装置
WO1997008752A1 (en) * 1995-08-25 1997-03-06 Hitachi, Ltd. Mis semiconductor device

Also Published As

Publication number Publication date
JPH027528B2 (enrdf_load_stackoverflow) 1990-02-19

Similar Documents

Publication Publication Date Title
US5081377A (en) Latch circuit with reduced metastability
JPH0142013B2 (enrdf_load_stackoverflow)
EP0964519A2 (en) Semiconductor integrated logic circuit with sequential circuits capable of preventing sub-threshold leakage current
JPH0527285B2 (enrdf_load_stackoverflow)
JPS5871717A (ja) 半導体集積回路装置
JP2636749B2 (ja) Ｘｏｒ回路と反転セレクタ回路及びこれらを用いた加算回路
US6211702B1 (en) Input circuit
KR900005234B1 (ko) 반도체 집적회로장치
JPS5928986B2 (ja) 半導体集積回路
JPS59224915A (ja) デ−タラツチ回路
JPH04369920A (ja) 入力選択機能付きラッチ回路
JPS60116223A (ja) ドライステ−トゲ−トの保護回路
JPS59224914A (ja) デ−タラツチ回路
JPH03175728A (ja) 半導体メモリ装置
JPH0710421Y2 (ja) 出力デ−タ制御回路
JP2500100Y2 (ja) 出力デ―タ制御回路
JP3310482B2 (ja) マイクロコンピュータ
JPH0237067Y2 (enrdf_load_stackoverflow)
JPH0552688B2 (enrdf_load_stackoverflow)
JPH05890B2 (enrdf_load_stackoverflow)
JP2818414B2 (ja) 半導体装置
JPH09223949A (ja) 論理回路
JPH05265949A (ja) 集積回路装置
JPH09167947A (ja) 論理回路
JPS60100247A (ja) トライ．ステ−ト．ゲ−トの保護方式