JPS5871603A - 薄膜サ−ミスタの製造方法 - Google Patents
薄膜サ−ミスタの製造方法Info
- Publication number
- JPS5871603A JPS5871603A JP56170383A JP17038381A JPS5871603A JP S5871603 A JPS5871603 A JP S5871603A JP 56170383 A JP56170383 A JP 56170383A JP 17038381 A JP17038381 A JP 17038381A JP S5871603 A JPS5871603 A JP S5871603A
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- manufacturing
- thin film
- chip
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thermistors And Varistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56170383A JPS5871603A (ja) | 1981-10-23 | 1981-10-23 | 薄膜サ−ミスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56170383A JPS5871603A (ja) | 1981-10-23 | 1981-10-23 | 薄膜サ−ミスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5871603A true JPS5871603A (ja) | 1983-04-28 |
| JPS6252924B2 JPS6252924B2 (enrdf_load_stackoverflow) | 1987-11-07 |
Family
ID=15903911
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56170383A Granted JPS5871603A (ja) | 1981-10-23 | 1981-10-23 | 薄膜サ−ミスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5871603A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63310101A (ja) * | 1987-06-12 | 1988-12-19 | Nok Corp | 薄膜サ−ミスタの製造法 |
| JPH04105304A (ja) * | 1990-08-23 | 1992-04-07 | Murata Mfg Co Ltd | 磁器半導体素子の電極形成方法 |
| JPH04105303A (ja) * | 1990-08-23 | 1992-04-07 | Murata Mfg Co Ltd | 磁器半導体素子の電極形成方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7115902B1 (en) | 1990-11-20 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| US5849601A (en) | 1990-12-25 | 1998-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| US7098479B1 (en) | 1990-12-25 | 2006-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
| US7576360B2 (en) | 1990-12-25 | 2009-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device which comprises thin film transistors and method for manufacturing the same |
-
1981
- 1981-10-23 JP JP56170383A patent/JPS5871603A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63310101A (ja) * | 1987-06-12 | 1988-12-19 | Nok Corp | 薄膜サ−ミスタの製造法 |
| JPH04105304A (ja) * | 1990-08-23 | 1992-04-07 | Murata Mfg Co Ltd | 磁器半導体素子の電極形成方法 |
| JPH04105303A (ja) * | 1990-08-23 | 1992-04-07 | Murata Mfg Co Ltd | 磁器半導体素子の電極形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6252924B2 (enrdf_load_stackoverflow) | 1987-11-07 |
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