JPS5867058A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS5867058A JPS5867058A JP56165338A JP16533881A JPS5867058A JP S5867058 A JPS5867058 A JP S5867058A JP 56165338 A JP56165338 A JP 56165338A JP 16533881 A JP16533881 A JP 16533881A JP S5867058 A JPS5867058 A JP S5867058A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- relative ratio
- resistors
- resistor
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
- H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56165338A JPS5867058A (ja) | 1981-10-16 | 1981-10-16 | 半導体装置 |
EP82104644A EP0066263B2 (en) | 1981-05-27 | 1982-05-27 | Semiconductor device having two resistors |
DE8282104644T DE3273527D1 (en) | 1981-05-27 | 1982-05-27 | Semiconductor device having two resistors |
US06/867,422 US4725876A (en) | 1981-05-27 | 1986-05-15 | Semiconductor device having at least two resistors with high resistance values |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56165338A JPS5867058A (ja) | 1981-10-16 | 1981-10-16 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5867058A true JPS5867058A (ja) | 1983-04-21 |
JPH0226789B2 JPH0226789B2 (enrdf_load_stackoverflow) | 1990-06-12 |
Family
ID=15810432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56165338A Granted JPS5867058A (ja) | 1981-05-27 | 1981-10-16 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5867058A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58182860A (ja) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | 半導体集積回路装置 |
JPS6179249A (ja) * | 1984-09-26 | 1986-04-22 | Nec Corp | 半導体装置 |
JPS61106047U (enrdf_load_stackoverflow) * | 1984-12-19 | 1986-07-05 |
-
1981
- 1981-10-16 JP JP56165338A patent/JPS5867058A/ja active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58182860A (ja) * | 1982-04-21 | 1983-10-25 | Hitachi Ltd | 半導体集積回路装置 |
JPS6179249A (ja) * | 1984-09-26 | 1986-04-22 | Nec Corp | 半導体装置 |
JPS61106047U (enrdf_load_stackoverflow) * | 1984-12-19 | 1986-07-05 |
Also Published As
Publication number | Publication date |
---|---|
JPH0226789B2 (enrdf_load_stackoverflow) | 1990-06-12 |
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