JPS6256666B2 - - Google Patents

Info

Publication number
JPS6256666B2
JPS6256666B2 JP56080408A JP8040881A JPS6256666B2 JP S6256666 B2 JPS6256666 B2 JP S6256666B2 JP 56080408 A JP56080408 A JP 56080408A JP 8040881 A JP8040881 A JP 8040881A JP S6256666 B2 JPS6256666 B2 JP S6256666B2
Authority
JP
Japan
Prior art keywords
resistance
diffusion layer
pinch
region
type diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56080408A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57196558A (en
Inventor
Atsushi Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56080408A priority Critical patent/JPS57196558A/ja
Priority to DE8282104644T priority patent/DE3273527D1/de
Priority to EP82104644A priority patent/EP0066263B2/en
Publication of JPS57196558A publication Critical patent/JPS57196558A/ja
Priority to US06/867,422 priority patent/US4725876A/en
Publication of JPS6256666B2 publication Critical patent/JPS6256666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP56080408A 1981-05-27 1981-05-27 Semiconductor integrated circuit device Granted JPS57196558A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56080408A JPS57196558A (en) 1981-05-27 1981-05-27 Semiconductor integrated circuit device
DE8282104644T DE3273527D1 (en) 1981-05-27 1982-05-27 Semiconductor device having two resistors
EP82104644A EP0066263B2 (en) 1981-05-27 1982-05-27 Semiconductor device having two resistors
US06/867,422 US4725876A (en) 1981-05-27 1986-05-15 Semiconductor device having at least two resistors with high resistance values

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56080408A JPS57196558A (en) 1981-05-27 1981-05-27 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS57196558A JPS57196558A (en) 1982-12-02
JPS6256666B2 true JPS6256666B2 (enrdf_load_stackoverflow) 1987-11-26

Family

ID=13717459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56080408A Granted JPS57196558A (en) 1981-05-27 1981-05-27 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57196558A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62163359A (ja) * 1986-01-14 1987-07-20 Sanyo Electric Co Ltd 半導体抵抗装置
JP5072396B2 (ja) * 2006-06-12 2012-11-14 株式会社リコー 抵抗素子調整方法、抵抗素子調整方法によって抵抗値及び温度依存特性が調整された抵抗素子、その抵抗素子を用いた電流発生装置
JP7027176B2 (ja) * 2018-01-22 2022-03-01 ラピスセミコンダクタ株式会社 半導体装置

Also Published As

Publication number Publication date
JPS57196558A (en) 1982-12-02

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