JPS5864046A - マスタ−スライス半導体集積回路装置 - Google Patents

マスタ−スライス半導体集積回路装置

Info

Publication number
JPS5864046A
JPS5864046A JP56163004A JP16300481A JPS5864046A JP S5864046 A JPS5864046 A JP S5864046A JP 56163004 A JP56163004 A JP 56163004A JP 16300481 A JP16300481 A JP 16300481A JP S5864046 A JPS5864046 A JP S5864046A
Authority
JP
Japan
Prior art keywords
conductivity type
integrated circuit
circuit device
master slice
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56163004A
Other languages
English (en)
Japanese (ja)
Other versions
JPS643341B2 (enExample
Inventor
Kunimitsu Fujiki
藤木　國光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56163004A priority Critical patent/JPS5864046A/ja
Publication of JPS5864046A publication Critical patent/JPS5864046A/ja
Publication of JPS643341B2 publication Critical patent/JPS643341B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56163004A 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置 Granted JPS5864046A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56163004A JPS5864046A (ja) 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56163004A JPS5864046A (ja) 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5864046A true JPS5864046A (ja) 1983-04-16
JPS643341B2 JPS643341B2 (enExample) 1989-01-20

Family

ID=15765360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56163004A Granted JPS5864046A (ja) 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5864046A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716450A (en) * 1984-06-26 1987-12-29 Nec Corporation Semiconductor integrated circuit having complementary field effect transistors
US4746965A (en) * 1985-03-29 1988-05-24 Kabushiki Kaisha Toshiba Integrated semiconductor circuit device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493375A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5493375A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Semiconductor integrated circuit device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716450A (en) * 1984-06-26 1987-12-29 Nec Corporation Semiconductor integrated circuit having complementary field effect transistors
US4746965A (en) * 1985-03-29 1988-05-24 Kabushiki Kaisha Toshiba Integrated semiconductor circuit device

Also Published As

Publication number Publication date
JPS643341B2 (enExample) 1989-01-20

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