JPS643341B2 - - Google Patents

Info

Publication number
JPS643341B2
JPS643341B2 JP56163004A JP16300481A JPS643341B2 JP S643341 B2 JPS643341 B2 JP S643341B2 JP 56163004 A JP56163004 A JP 56163004A JP 16300481 A JP16300481 A JP 16300481A JP S643341 B2 JPS643341 B2 JP S643341B2
Authority
JP
Japan
Prior art keywords
conductivity type
transistors
source
layer
sets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56163004A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5864046A (ja
Inventor
Kunimitsu Fujiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56163004A priority Critical patent/JPS5864046A/ja
Publication of JPS5864046A publication Critical patent/JPS5864046A/ja
Publication of JPS643341B2 publication Critical patent/JPS643341B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP56163004A 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置 Granted JPS5864046A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56163004A JPS5864046A (ja) 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56163004A JPS5864046A (ja) 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS5864046A JPS5864046A (ja) 1983-04-16
JPS643341B2 true JPS643341B2 (enExample) 1989-01-20

Family

ID=15765360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56163004A Granted JPS5864046A (ja) 1981-10-13 1981-10-13 マスタ−スライス半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS5864046A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6110269A (ja) * 1984-06-26 1986-01-17 Nec Corp 半導体集積回路
JPH0693480B2 (ja) * 1985-03-29 1994-11-16 株式会社東芝 半導体集積回路装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5925381B2 (ja) * 1977-12-30 1984-06-16 富士通株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
JPS5864046A (ja) 1983-04-16

Similar Documents

Publication Publication Date Title
KR100253699B1 (ko) Soi소자 및 그 제조방법
JP2001352077A (ja) Ｓｏｉ電界効果トランジスタ
JPS638622B2 (enExample)
JPH0554699B2 (enExample)
US6110773A (en) Static random access memory device manufacturing method
US4356504A (en) MOS Integrated circuit structure for discretionary interconnection
US20080237708A1 (en) SILICON ON INSULATOR (SOI) FIELD EFFECT TRANSISTORS (FETs) WITH ADJACENT BODY CONTACTS
JP5004251B2 (ja) Ｓｒａｍセル及びｓｒａｍ装置
US5275962A (en) Mask programmable gate array base cell
JPH0492475A (ja) 相補型薄膜トランジスタ
JPS643341B2 (enExample)
US5359562A (en) Semiconductor memory having polycrystalline silicon load resistors and CMOS peripheral circuitry
JPH0252428B2 (enExample)
US4745453A (en) Semiconductor device
JPH02246264A (ja) 半導体装置およびその製造方法
US5841199A (en) Structure of semiconductor device
JPS5951143B2 (ja) Ｍｉｓ形半導体装置
JPH0122733B2 (enExample)
JPH04164371A (ja) 半導体集積回路
JPH04118964A (ja) 薄膜トランジスタ
JPH0517711B2 (enExample)
JPH05136382A (ja) 相補型ゲートアレイ
KR100226784B1 (ko) 반도체 소자의 제조방법
KR100338816B1 (ko) Ｓｒａｍ의 ｍｏｓ 트랜지스터 및 박막 트랜지스터의게이트전극 형성방법
JPS6271258A (ja) 半導体集積回路装置