JPS5860575A - トランジスタ - Google Patents

トランジスタ

Info

Publication number
JPS5860575A
JPS5860575A JP56159934A JP15993481A JPS5860575A JP S5860575 A JPS5860575 A JP S5860575A JP 56159934 A JP56159934 A JP 56159934A JP 15993481 A JP15993481 A JP 15993481A JP S5860575 A JPS5860575 A JP S5860575A
Authority
JP
Japan
Prior art keywords
electrode
gate
source
input
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56159934A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6251509B2 (enExample
Inventor
Naofumi Tsuzuki
都築　直文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP56159934A priority Critical patent/JPS5860575A/ja
Publication of JPS5860575A publication Critical patent/JPS5860575A/ja
Publication of JPS6251509B2 publication Critical patent/JPS6251509B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56159934A 1981-10-07 1981-10-07 トランジスタ Granted JPS5860575A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56159934A JPS5860575A (ja) 1981-10-07 1981-10-07 トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56159934A JPS5860575A (ja) 1981-10-07 1981-10-07 トランジスタ

Publications (2)

Publication Number Publication Date
JPS5860575A true JPS5860575A (ja) 1983-04-11
JPS6251509B2 JPS6251509B2 (enExample) 1987-10-30

Family

ID=15704340

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56159934A Granted JPS5860575A (ja) 1981-10-07 1981-10-07 トランジスタ

Country Status (1)

Country Link
JP (1) JPS5860575A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892270A (ja) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp ＧａＡｓマイクロ波モノリシツク集積回路装置
US4587541A (en) * 1983-07-28 1986-05-06 Cornell Research Foundation, Inc. Monolithic coplanar waveguide travelling wave transistor amplifier
EP0814512A3 (en) * 1996-06-20 1999-06-23 Murata Manufacturing Co., Ltd. High-frequency semiconductor device
EP0818824A3 (en) * 1996-07-10 1999-06-23 Murata Manufacturing Co., Ltd. High-frequency semiconductor device
JP2017112210A (ja) * 2015-12-16 2017-06-22 富士電機株式会社 半導体モジュール

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6751696B2 (en) 1990-04-18 2004-06-15 Rambus Inc. Memory device having a programmable register
IL96808A (en) 1990-04-18 1996-03-31 Rambus Inc Introductory / Origin Circuit Agreed Using High-Performance Brokerage

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846665A (ja) * 1981-09-12 1983-03-18 Mitsubishi Electric Corp アナログ集積回路装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846665A (ja) * 1981-09-12 1983-03-18 Mitsubishi Electric Corp アナログ集積回路装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5892270A (ja) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp ＧａＡｓマイクロ波モノリシツク集積回路装置
US4587541A (en) * 1983-07-28 1986-05-06 Cornell Research Foundation, Inc. Monolithic coplanar waveguide travelling wave transistor amplifier
EP0814512A3 (en) * 1996-06-20 1999-06-23 Murata Manufacturing Co., Ltd. High-frequency semiconductor device
KR100287477B1 (ko) * 1996-06-20 2001-04-16 무라타 야스타카 고주파 반도체 장치
EP0818824A3 (en) * 1996-07-10 1999-06-23 Murata Manufacturing Co., Ltd. High-frequency semiconductor device
US6285269B1 (en) 1996-07-10 2001-09-04 Murata Manufacturing Co., Ltd. High-frequency semiconductor device having microwave transmission line being formed by a gate electrode source electrode and a dielectric layer in between
JP2017112210A (ja) * 2015-12-16 2017-06-22 富士電機株式会社 半導体モジュール

Also Published As

Publication number Publication date
JPS6251509B2 (enExample) 1987-10-30

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