JPS5858777A - 半導体素子の製造方法 - Google Patents

半導体素子の製造方法

Info

Publication number
JPS5858777A
JPS5858777A JP56158548A JP15854881A JPS5858777A JP S5858777 A JPS5858777 A JP S5858777A JP 56158548 A JP56158548 A JP 56158548A JP 15854881 A JP15854881 A JP 15854881A JP S5858777 A JPS5858777 A JP S5858777A
Authority
JP
Japan
Prior art keywords
electrode
temperature
film
heat treatment
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56158548A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6249753B2 (enrdf_load_stackoverflow
Inventor
Shinichiro Ishihara
伸一郎 石原
Takashi Hirao
孝 平尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP56158548A priority Critical patent/JPS5858777A/ja
Publication of JPS5858777A publication Critical patent/JPS5858777A/ja
Publication of JPS6249753B2 publication Critical patent/JPS6249753B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers

Landscapes

  • Photovoltaic Devices (AREA)
JP56158548A 1981-10-05 1981-10-05 半導体素子の製造方法 Granted JPS5858777A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56158548A JPS5858777A (ja) 1981-10-05 1981-10-05 半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56158548A JPS5858777A (ja) 1981-10-05 1981-10-05 半導体素子の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62003546A Division JPS62169372A (ja) 1987-01-09 1987-01-09 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS5858777A true JPS5858777A (ja) 1983-04-07
JPS6249753B2 JPS6249753B2 (enrdf_load_stackoverflow) 1987-10-21

Family

ID=15674109

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56158548A Granted JPS5858777A (ja) 1981-10-05 1981-10-05 半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS5858777A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224182A (ja) * 1983-06-03 1984-12-17 Hitachi Ltd 薄膜半導体装置
JPS60211880A (ja) * 1984-04-05 1985-10-24 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS60211817A (ja) * 1984-04-05 1985-10-24 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS60211879A (ja) * 1984-04-05 1985-10-24 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6126268A (ja) * 1984-07-16 1986-02-05 Kanegafuchi Chem Ind Co Ltd 耐熱性アモルフアスシリコン系太陽電池およびその製法
JPS6191973A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜光電変換素子およびその製法
JPS61144885A (ja) * 1984-12-18 1986-07-02 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜光電変換素子の製法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123178A (en) * 1979-03-16 1980-09-22 Sanyo Electric Co Ltd Solar cell
JPS5669874A (en) * 1979-11-13 1981-06-11 Fuji Electric Co Ltd Amorphous semiconductor solar cell
JPS6246076A (ja) * 1985-08-21 1987-02-27 日本鋼管株式会社 埋設撤去管の摩擦抵抗軽減方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55123178A (en) * 1979-03-16 1980-09-22 Sanyo Electric Co Ltd Solar cell
JPS5669874A (en) * 1979-11-13 1981-06-11 Fuji Electric Co Ltd Amorphous semiconductor solar cell
JPS6246076A (ja) * 1985-08-21 1987-02-27 日本鋼管株式会社 埋設撤去管の摩擦抵抗軽減方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59224182A (ja) * 1983-06-03 1984-12-17 Hitachi Ltd 薄膜半導体装置
JPS60211880A (ja) * 1984-04-05 1985-10-24 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS60211817A (ja) * 1984-04-05 1985-10-24 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS60211879A (ja) * 1984-04-05 1985-10-24 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6126268A (ja) * 1984-07-16 1986-02-05 Kanegafuchi Chem Ind Co Ltd 耐熱性アモルフアスシリコン系太陽電池およびその製法
JPS6191973A (ja) * 1984-10-11 1986-05-10 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜光電変換素子およびその製法
JPS61144885A (ja) * 1984-12-18 1986-07-02 Kanegafuchi Chem Ind Co Ltd 耐熱性薄膜光電変換素子の製法

Also Published As

Publication number Publication date
JPS6249753B2 (enrdf_load_stackoverflow) 1987-10-21

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