JPS5857750A - 不揮発性半導体メモリ - Google Patents

不揮発性半導体メモリ

Info

Publication number
JPS5857750A
JPS5857750A JP56157044A JP15704481A JPS5857750A JP S5857750 A JPS5857750 A JP S5857750A JP 56157044 A JP56157044 A JP 56157044A JP 15704481 A JP15704481 A JP 15704481A JP S5857750 A JPS5857750 A JP S5857750A
Authority
JP
Japan
Prior art keywords
gate electrode
voltage
drain region
insulating film
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56157044A
Other languages
English (en)
Japanese (ja)
Other versions
JPS649741B2 (en, 2012
Inventor
Masaaki Kamiya
昌明 神谷
Yoshikazu Kojima
芳和 小島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP56157044A priority Critical patent/JPS5857750A/ja
Priority to GB08227926A priority patent/GB2107119B/en
Priority to DE19823236469 priority patent/DE3236469A1/de
Publication of JPS5857750A publication Critical patent/JPS5857750A/ja
Priority to US06/831,064 priority patent/US4794433A/en
Publication of JPS649741B2 publication Critical patent/JPS649741B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP56157044A 1981-10-01 1981-10-01 不揮発性半導体メモリ Granted JPS5857750A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56157044A JPS5857750A (ja) 1981-10-01 1981-10-01 不揮発性半導体メモリ
GB08227926A GB2107119B (en) 1981-10-01 1982-09-30 A non-volatile semiconductor memory device
DE19823236469 DE3236469A1 (de) 1981-10-01 1982-10-01 Nichtfluechtiger speicher
US06/831,064 US4794433A (en) 1981-10-01 1986-02-19 Non-volatile semiconductor memory with non-uniform gate insulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56157044A JPS5857750A (ja) 1981-10-01 1981-10-01 不揮発性半導体メモリ

Publications (2)

Publication Number Publication Date
JPS5857750A true JPS5857750A (ja) 1983-04-06
JPS649741B2 JPS649741B2 (en, 2012) 1989-02-20

Family

ID=15640963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56157044A Granted JPS5857750A (ja) 1981-10-01 1981-10-01 不揮発性半導体メモリ

Country Status (4)

Country Link
US (1) US4794433A (en, 2012)
JP (1) JPS5857750A (en, 2012)
DE (1) DE3236469A1 (en, 2012)
GB (1) GB2107119B (en, 2012)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1213218B (it) * 1984-09-25 1989-12-14 Ates Componenti Elettron Processo per la fabbricazione di una cella di memoria non volatile con area di ossido sottile di dimensioni molto piccole, e cella ottenuta con il processo suddetto.
KR890003030A (ko) * 1987-07-08 1989-04-12 미다 가쓰시게 플로팅 게이트를 갖는 반도체장치
JPH0712063B2 (ja) * 1987-10-21 1995-02-08 三菱電機株式会社 不揮発性半導体記憶装置
US5262846A (en) * 1988-11-14 1993-11-16 Texas Instruments Incorporated Contact-free floating-gate memory array with silicided buried bitlines and with single-step-defined floating gates
DE69025939T2 (de) * 1989-06-21 1996-08-01 Xicor Inc Apparat und verfahren zur herstellung einer speicherzelle mit schwebendem gate und doppelter dielektrikumschicht
US5153691A (en) * 1989-06-21 1992-10-06 Xicor, Inc. Apparatus for a dual thickness floating gate memory cell
AU638812B2 (en) * 1990-04-16 1993-07-08 Digital Equipment Corporation A method of operating a semiconductor device
US5273926A (en) * 1991-06-27 1993-12-28 Texas Instruments Incorporated Method of making flash EEPROM or merged FAMOS cell without alignment sensitivity
US5225700A (en) * 1991-06-28 1993-07-06 Texas Instruments Incorporated Circuit and method for forming a non-volatile memory cell
US5260593A (en) * 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction
US5218568A (en) * 1991-12-17 1993-06-08 Texas Instruments Incorporated Electrically-erasable, electrically-programmable read-only memory cell, an array of such cells and methods for making and using the same
US5444279A (en) * 1993-08-11 1995-08-22 Micron Semiconductor, Inc. Floating gate memory device having discontinuous gate oxide thickness over the channel region
JP3512292B2 (ja) * 1996-01-30 2004-03-29 忠弘 大見 半導体装置及びこれを用いた算術演算システム、画像処理システム、音声信号処理システム、パターン認識システム、信号処理システム、並列データ処理システム、ビデオ信号処理システム
EP0793238A1 (en) * 1996-02-29 1997-09-03 STMicroelectronics S.r.l. Electrically programmable non-volatile memory cells device for a reduced number of programming cycles
US6734491B1 (en) * 2002-12-30 2004-05-11 Texas Instruments Deutschland Gmbh EEPROM with reduced manufacturing complexity
US20040232476A1 (en) * 2003-05-20 2004-11-25 Kang Sung-Taeg EEPROM cell structures having non-uniform channel-dielectric thickness and methods of making the same
US7256449B2 (en) * 2003-05-20 2007-08-14 Samsung Electronics, Co., Ltd. EEPROM device for increasing a coupling ratio and fabrication method thereof
KR100604850B1 (ko) * 2003-05-20 2006-07-31 삼성전자주식회사 균일하지 않은 채널 유전막 두께를 갖는 이이피롬 셀 구조및 그 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5157291A (en, 2012) * 1974-09-20 1976-05-19 Siemens Ag

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3439236A (en) * 1965-12-09 1969-04-15 Rca Corp Insulated-gate field-effect transistor with critical bulk characteristics for use as an oscillator component
US3714522A (en) * 1968-11-14 1973-01-30 Kogyo Gijutsuin Agency Of Ind Semiconductor device having surface electric-field effect
US3767983A (en) * 1972-08-23 1973-10-23 Bell Telephone Labor Inc Charge transfer device with improved transfer efficiency
US4103344A (en) * 1976-01-30 1978-07-25 Westinghouse Electric Corp. Method and apparatus for addressing a non-volatile memory array
DE2743422A1 (de) * 1977-09-27 1979-03-29 Siemens Ag Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik
US4203158A (en) * 1978-02-24 1980-05-13 Intel Corporation Electrically programmable and erasable MOS floating gate memory device employing tunneling and method of fabricating same
JPS55111173A (en) * 1979-02-20 1980-08-27 Nec Corp Semiconductor memory device
DE2908796C3 (de) * 1979-03-07 1982-04-01 Siemens AG, 1000 Berlin und 8000 München Umprogrammierbarer Halbleiter-Festwertspeicher vom Floating-Gate-Typ
US4399523A (en) * 1979-08-24 1983-08-16 Centre Electronique Horloger Sa Non-volatile, electrically erasable and reprogrammable memory element
US4409723A (en) * 1980-04-07 1983-10-18 Eliyahou Harari Method of forming non-volatile EPROM and EEPROM with increased efficiency
DE3029539A1 (de) * 1980-08-04 1982-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle
JPS57180182A (en) * 1981-04-30 1982-11-06 Fujitsu Ltd Semiconductor involatile memory device
DE3334295T1 (de) * 1982-03-09 1984-03-22 RCA Corp., 08540 Princeton, N.J. Permanente Schwebe-Gate-Speicherzelle
US4558339A (en) * 1982-03-09 1985-12-10 Rca Corporation Electrically alterable, nonvolatile floating gate memory device
US4615020A (en) * 1983-12-06 1986-09-30 Advanced Micro Devices, Inc. Nonvolatile dynamic ram circuit
US4589009A (en) * 1984-10-09 1986-05-13 The United States Of America As Represented By The Secretary Of The Army Non-volatile piezoelectric memory transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5157291A (en, 2012) * 1974-09-20 1976-05-19 Siemens Ag

Also Published As

Publication number Publication date
JPS649741B2 (en, 2012) 1989-02-20
US4794433A (en) 1988-12-27
DE3236469C2 (en, 2012) 1992-07-09
DE3236469A1 (de) 1983-04-21
GB2107119A (en) 1983-04-20
GB2107119B (en) 1986-03-19

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