JPH0586675B2 - - Google Patents

Info

Publication number
JPH0586675B2
JPH0586675B2 JP58021177A JP2117783A JPH0586675B2 JP H0586675 B2 JPH0586675 B2 JP H0586675B2 JP 58021177 A JP58021177 A JP 58021177A JP 2117783 A JP2117783 A JP 2117783A JP H0586675 B2 JPH0586675 B2 JP H0586675B2
Authority
JP
Japan
Prior art keywords
gate electrode
insulating film
diffusion layer
floating gate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58021177A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59147461A (ja
Inventor
Juichi Kato
Masaaki Kamya
Yoshikazu Kojima
Kojiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP58021177A priority Critical patent/JPS59147461A/ja
Publication of JPS59147461A publication Critical patent/JPS59147461A/ja
Publication of JPH0586675B2 publication Critical patent/JPH0586675B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
JP58021177A 1983-02-10 1983-02-10 半導体不揮発性メモリ Granted JPS59147461A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58021177A JPS59147461A (ja) 1983-02-10 1983-02-10 半導体不揮発性メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58021177A JPS59147461A (ja) 1983-02-10 1983-02-10 半導体不揮発性メモリ

Publications (2)

Publication Number Publication Date
JPS59147461A JPS59147461A (ja) 1984-08-23
JPH0586675B2 true JPH0586675B2 (en, 2012) 1993-12-13

Family

ID=12047647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58021177A Granted JPS59147461A (ja) 1983-02-10 1983-02-10 半導体不揮発性メモリ

Country Status (1)

Country Link
JP (1) JPS59147461A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7154779B2 (en) 2004-01-21 2006-12-26 Sandisk Corporation Non-volatile memory cell using high-k material inter-gate programming
JP6206546B1 (ja) * 2016-06-23 2017-10-04 株式会社明電舎 電界放射装置および改質処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52142980A (en) * 1976-05-25 1977-11-29 Toshiba Corp Non-volatile semiconductor memory
JPS57107076A (en) * 1980-12-25 1982-07-03 Fujitsu Ltd Non-volatile semiconductor memory unit

Also Published As

Publication number Publication date
JPS59147461A (ja) 1984-08-23

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