JPS59147461A - 半導体不揮発性メモリ - Google Patents

半導体不揮発性メモリ

Info

Publication number
JPS59147461A
JPS59147461A JP58021177A JP2117783A JPS59147461A JP S59147461 A JPS59147461 A JP S59147461A JP 58021177 A JP58021177 A JP 58021177A JP 2117783 A JP2117783 A JP 2117783A JP S59147461 A JPS59147461 A JP S59147461A
Authority
JP
Japan
Prior art keywords
gate electrode
floating gate
insulating film
diffusion layer
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58021177A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0586675B2 (en, 2012
Inventor
Yuichi Kato
祐一 加藤
Masaaki Kamiya
昌明 神谷
Yoshikazu Kojima
芳和 小島
Kojiro Tanaka
小次郎 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP58021177A priority Critical patent/JPS59147461A/ja
Publication of JPS59147461A publication Critical patent/JPS59147461A/ja
Publication of JPH0586675B2 publication Critical patent/JPH0586675B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Static Random-Access Memory (AREA)
JP58021177A 1983-02-10 1983-02-10 半導体不揮発性メモリ Granted JPS59147461A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58021177A JPS59147461A (ja) 1983-02-10 1983-02-10 半導体不揮発性メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58021177A JPS59147461A (ja) 1983-02-10 1983-02-10 半導体不揮発性メモリ

Publications (2)

Publication Number Publication Date
JPS59147461A true JPS59147461A (ja) 1984-08-23
JPH0586675B2 JPH0586675B2 (en, 2012) 1993-12-13

Family

ID=12047647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58021177A Granted JPS59147461A (ja) 1983-02-10 1983-02-10 半導体不揮発性メモリ

Country Status (1)

Country Link
JP (1) JPS59147461A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005073979A1 (en) * 2004-01-21 2005-08-11 Sandisk Corporation Non-volatile memory cell using high-k material and inter-gate programming
CN109314028A (zh) * 2016-06-23 2019-02-05 株式会社明电舍 场发射装置和重整处理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52142980A (en) * 1976-05-25 1977-11-29 Toshiba Corp Non-volatile semiconductor memory
JPS57107076A (en) * 1980-12-25 1982-07-03 Fujitsu Ltd Non-volatile semiconductor memory unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52142980A (en) * 1976-05-25 1977-11-29 Toshiba Corp Non-volatile semiconductor memory
JPS57107076A (en) * 1980-12-25 1982-07-03 Fujitsu Ltd Non-volatile semiconductor memory unit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005073979A1 (en) * 2004-01-21 2005-08-11 Sandisk Corporation Non-volatile memory cell using high-k material and inter-gate programming
US7154779B2 (en) 2004-01-21 2006-12-26 Sandisk Corporation Non-volatile memory cell using high-k material inter-gate programming
US7405968B2 (en) 2004-01-21 2008-07-29 Sandisk Corporation Non-volatile memory cell using high-K material and inter-gate programming
CN109314028A (zh) * 2016-06-23 2019-02-05 株式会社明电舍 场发射装置和重整处理方法

Also Published As

Publication number Publication date
JPH0586675B2 (en, 2012) 1993-12-13

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