JPS5854668A - 電気的消去型読出し専用メモリおよびその製造方法 - Google Patents

電気的消去型読出し専用メモリおよびその製造方法

Info

Publication number
JPS5854668A
JPS5854668A JP56152912A JP15291281A JPS5854668A JP S5854668 A JPS5854668 A JP S5854668A JP 56152912 A JP56152912 A JP 56152912A JP 15291281 A JP15291281 A JP 15291281A JP S5854668 A JPS5854668 A JP S5854668A
Authority
JP
Japan
Prior art keywords
insulating layer
layer
forming
tunneling
erasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56152912A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6341240B2 (enrdf_load_stackoverflow
Inventor
Toshikazu Furuya
古屋　敏和
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56152912A priority Critical patent/JPS5854668A/ja
Publication of JPS5854668A publication Critical patent/JPS5854668A/ja
Publication of JPS6341240B2 publication Critical patent/JPS6341240B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP56152912A 1981-09-29 1981-09-29 電気的消去型読出し専用メモリおよびその製造方法 Granted JPS5854668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56152912A JPS5854668A (ja) 1981-09-29 1981-09-29 電気的消去型読出し専用メモリおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56152912A JPS5854668A (ja) 1981-09-29 1981-09-29 電気的消去型読出し専用メモリおよびその製造方法

Publications (2)

Publication Number Publication Date
JPS5854668A true JPS5854668A (ja) 1983-03-31
JPS6341240B2 JPS6341240B2 (enrdf_load_stackoverflow) 1988-08-16

Family

ID=15550853

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56152912A Granted JPS5854668A (ja) 1981-09-29 1981-09-29 電気的消去型読出し専用メモリおよびその製造方法

Country Status (1)

Country Link
JP (1) JPS5854668A (enrdf_load_stackoverflow)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094775A (ja) * 1983-10-27 1985-05-27 Mitsubishi Electric Corp 半導体記憶装置及びその製造方法
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4754320A (en) * 1985-02-25 1988-06-28 Kabushiki Kaisha Toshiba EEPROM with sidewall control gate
US4794565A (en) * 1986-09-15 1988-12-27 The Regents Of The University Of California Electrically programmable memory device employing source side injection
US5041886A (en) * 1989-08-17 1991-08-20 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
US5051793A (en) * 1989-03-27 1991-09-24 Ict International Cmos Technology, Inc. Coplanar flash EPROM cell and method of making same
US5053849A (en) * 1987-04-24 1991-10-01 Hitachi, Ltd. Transistor with overlapping gate/drain and two-layered gate structures
US5063172A (en) * 1990-06-28 1991-11-05 National Semiconductor Corporation Manufacture of a split-gate EPROM cell using polysilicon spacers
US5089433A (en) * 1988-08-08 1992-02-18 National Semiconductor Corporation Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
US5091882A (en) * 1989-07-31 1992-02-25 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of operating the same
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5153144A (en) * 1988-05-10 1992-10-06 Hitachi, Ltd. Method of making tunnel EEPROM
US5168465A (en) * 1988-06-08 1992-12-01 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5198380A (en) * 1988-06-08 1993-03-30 Sundisk Corporation Method of highly compact EPROM and flash EEPROM devices
WO1994015363A1 (en) * 1992-12-28 1994-07-07 Yu Shih Chiang Non-volatile semiconductor memory cell
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5445980A (en) * 1988-05-10 1995-08-29 Hitachi, Ltd. Method of making a semiconductor memory device
US5512505A (en) * 1990-12-18 1996-04-30 Sandisk Corporation Method of making dense vertical programmable read only memory cell structure
US5554553A (en) * 1988-06-08 1996-09-10 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
WO1997048135A1 (fr) * 1996-06-14 1997-12-18 Commissariat A L'energie Atomique Transistor mos a puits quantique et procedes de fabrication de celui-ci
US5723888A (en) * 1993-05-17 1998-03-03 Yu; Shih-Chiang Non-volatile semiconductor memory device

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094775A (ja) * 1983-10-27 1985-05-27 Mitsubishi Electric Corp 半導体記憶装置及びその製造方法
US4754320A (en) * 1985-02-25 1988-06-28 Kabushiki Kaisha Toshiba EEPROM with sidewall control gate
US4667217A (en) * 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
US4794565A (en) * 1986-09-15 1988-12-27 The Regents Of The University Of California Electrically programmable memory device employing source side injection
US5053849A (en) * 1987-04-24 1991-10-01 Hitachi, Ltd. Transistor with overlapping gate/drain and two-layered gate structures
US5153144A (en) * 1988-05-10 1992-10-06 Hitachi, Ltd. Method of making tunnel EEPROM
US5445980A (en) * 1988-05-10 1995-08-29 Hitachi, Ltd. Method of making a semiconductor memory device
USRE37959E1 (en) 1988-05-10 2003-01-07 Hitachi, Ltd. Semiconductor integrated circuit device and method of manufacturing the same
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5168465A (en) * 1988-06-08 1992-12-01 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5198380A (en) * 1988-06-08 1993-03-30 Sundisk Corporation Method of highly compact EPROM and flash EEPROM devices
US5554553A (en) * 1988-06-08 1996-09-10 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
US5089433A (en) * 1988-08-08 1992-02-18 National Semiconductor Corporation Bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
US5051793A (en) * 1989-03-27 1991-09-24 Ict International Cmos Technology, Inc. Coplanar flash EPROM cell and method of making same
US5091882A (en) * 1989-07-31 1992-02-25 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and method of operating the same
US5073513A (en) * 1989-08-17 1991-12-17 Samsung Electronics Co., Ltd. Manufacture of a nonvolatile semiconductor memory device having a sidewall select gate
US5041886A (en) * 1989-08-17 1991-08-20 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device and manufacturing method thereof
US5063172A (en) * 1990-06-28 1991-11-05 National Semiconductor Corporation Manufacture of a split-gate EPROM cell using polysilicon spacers
US5343063A (en) * 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US5512505A (en) * 1990-12-18 1996-04-30 Sandisk Corporation Method of making dense vertical programmable read only memory cell structure
US5380672A (en) * 1990-12-18 1995-01-10 Sundisk Corporation Dense vertical programmable read only memory cell structures and processes for making them
US5847425A (en) * 1990-12-18 1998-12-08 Sandisk Corporation Dense vertical programmable read only memory cell structures and processes for making them
US5965913A (en) * 1990-12-18 1999-10-12 Sandisk Corporation Dense vertical programmable read only memory cell structures and processes for making them
WO1994015363A1 (en) * 1992-12-28 1994-07-07 Yu Shih Chiang Non-volatile semiconductor memory cell
US5723888A (en) * 1993-05-17 1998-03-03 Yu; Shih-Chiang Non-volatile semiconductor memory device
WO1997048135A1 (fr) * 1996-06-14 1997-12-18 Commissariat A L'energie Atomique Transistor mos a puits quantique et procedes de fabrication de celui-ci
FR2749977A1 (fr) * 1996-06-14 1997-12-19 Commissariat Energie Atomique Transistor mos a puits quantique et procedes de fabrication de celui-ci

Also Published As

Publication number Publication date
JPS6341240B2 (enrdf_load_stackoverflow) 1988-08-16

Similar Documents

Publication Publication Date Title
JPS5854668A (ja) 電気的消去型読出し専用メモリおよびその製造方法
US4803529A (en) Electrically erasable and electrically programmable read only memory
EP0042964B1 (en) Memory matrix using one-transistor floating gate mos cells
US4112507A (en) Addressable MNOS cell for non-volatile memories
EP0198040B1 (en) Nonvolatile memory cell
JPS5955071A (ja) 不揮発性半導体装置
JPH0130313B2 (enrdf_load_stackoverflow)
JPH10340964A (ja) 不揮発性半導体記憶装置およびその製造方法
JPH0368542B2 (enrdf_load_stackoverflow)
TWI241016B (en) Nonvolatile semiconductor memory
JPH0855922A (ja) フラッシュメモリセルおよびその製造方法
US5338957A (en) Nonvolatile semiconductor device and a method of manufacturing thereof
US5612561A (en) Involatile semiconductor memory
JP2809802B2 (ja) 不揮発性半導体記憶装置
JPH05226662A (ja) 半導体記憶装置
JPS6045067A (ja) 不揮発性半導体メモリ装置
JPH0878544A (ja) 不揮発性半導体記憶装置
KR19990029181A (ko) 불휘발성 반도체 기억장치 및 그 제조방법
JPS6352478A (ja) 半導体集積回路装置
JP2797466B2 (ja) 不揮発性半導体記憶装置
JPS5933881A (ja) 不揮発性半導体メモリ装置
JP2725086B2 (ja) 不揮発性半導体記憶装置の消去方法
JPH0750351A (ja) 不揮発性半導体記憶装置並びにその製造方法及び使用方法
JP3126078B2 (ja) 半導体記憶装置およびその製造方法
JP3285412B2 (ja) 不揮発性半導体記憶装置