JPS5854651A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5854651A
JPS5854651A JP15324281A JP15324281A JPS5854651A JP S5854651 A JPS5854651 A JP S5854651A JP 15324281 A JP15324281 A JP 15324281A JP 15324281 A JP15324281 A JP 15324281A JP S5854651 A JPS5854651 A JP S5854651A
Authority
JP
Japan
Prior art keywords
film
silicon
forming
groove
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15324281A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0258778B2 (enrdf_load_stackoverflow
Inventor
Fujiki Tokuyoshi
徳「よし」　藤樹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15324281A priority Critical patent/JPS5854651A/ja
Publication of JPS5854651A publication Critical patent/JPS5854651A/ja
Publication of JPH0258778B2 publication Critical patent/JPH0258778B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76227—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials the dielectric materials being obtained by full chemical transformation of non-dielectric materials, such as polycristalline silicon, metals

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
JP15324281A 1981-09-28 1981-09-28 半導体装置の製造方法 Granted JPS5854651A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15324281A JPS5854651A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15324281A JPS5854651A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5854651A true JPS5854651A (ja) 1983-03-31
JPH0258778B2 JPH0258778B2 (enrdf_load_stackoverflow) 1990-12-10

Family

ID=15558160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15324281A Granted JPS5854651A (ja) 1981-09-28 1981-09-28 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5854651A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551911A (en) * 1982-12-28 1985-11-12 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device
US5084413A (en) * 1986-04-15 1992-01-28 Matsushita Electric Industrial Co., Ltd. Method for filling contact hole
US5472903A (en) * 1994-05-24 1995-12-05 United Microelectronics Corp. Isolation technology for sub-micron devices

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0620028A (ja) * 1992-06-29 1994-01-28 Honda Motor Co Ltd 車載用ｅｃｕ装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54589A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Burying method of insulator

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54589A (en) * 1977-06-03 1979-01-05 Hitachi Ltd Burying method of insulator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4551911A (en) * 1982-12-28 1985-11-12 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing semiconductor device
US5084413A (en) * 1986-04-15 1992-01-28 Matsushita Electric Industrial Co., Ltd. Method for filling contact hole
US5472903A (en) * 1994-05-24 1995-12-05 United Microelectronics Corp. Isolation technology for sub-micron devices

Also Published As

Publication number Publication date
JPH0258778B2 (enrdf_load_stackoverflow) 1990-12-10

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