JPS5852638A - 放射線感応性組成物 - Google Patents

放射線感応性組成物

Info

Publication number
JPS5852638A
JPS5852638A JP56149420A JP14942081A JPS5852638A JP S5852638 A JPS5852638 A JP S5852638A JP 56149420 A JP56149420 A JP 56149420A JP 14942081 A JP14942081 A JP 14942081A JP S5852638 A JPS5852638 A JP S5852638A
Authority
JP
Japan
Prior art keywords
sensitive composition
sulfone
radiation sensitive
radiation
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56149420A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0151822B2 (enExample
Inventor
Hiroshi Shiraishi
洋 白石
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56149420A priority Critical patent/JPS5852638A/ja
Priority to US06/420,878 priority patent/US4409317A/en
Priority to DE3235108A priority patent/DE3235108C2/de
Priority to NLAANVRAGE8203701,A priority patent/NL185806C/xx
Publication of JPS5852638A publication Critical patent/JPS5852638A/ja
Publication of JPH0151822B2 publication Critical patent/JPH0151822B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
JP56149420A 1981-09-24 1981-09-24 放射線感応性組成物 Granted JPS5852638A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56149420A JPS5852638A (ja) 1981-09-24 1981-09-24 放射線感応性組成物
US06/420,878 US4409317A (en) 1981-09-24 1982-09-21 Radiation sensitive coating composition
DE3235108A DE3235108C2 (de) 1981-09-24 1982-09-22 Strahlungsempfindliche Beschichtungsmasse
NLAANVRAGE8203701,A NL185806C (nl) 1981-09-24 1982-09-23 Stralingsgevoelig bekledingsmengsel.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56149420A JPS5852638A (ja) 1981-09-24 1981-09-24 放射線感応性組成物

Publications (2)

Publication Number Publication Date
JPS5852638A true JPS5852638A (ja) 1983-03-28
JPH0151822B2 JPH0151822B2 (enExample) 1989-11-06

Family

ID=15474716

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56149420A Granted JPS5852638A (ja) 1981-09-24 1981-09-24 放射線感応性組成物

Country Status (4)

Country Link
US (1) US4409317A (enExample)
JP (1) JPS5852638A (enExample)
DE (1) DE3235108C2 (enExample)
NL (1) NL185806C (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62191850A (ja) * 1986-02-17 1987-08-22 Nec Corp ポジレジスト材料
JPS63218949A (ja) * 1987-03-06 1988-09-12 Sumitomo Chem Co Ltd ポジ型レジスト組成物
US6537736B1 (en) 1999-03-12 2003-03-25 Matsushita Electric Industrial Co., Ltd. Patten formation method

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152A (ja) * 1982-06-25 1984-01-05 Hitachi Chem Co Ltd 画像形成性樹脂組成物
US4497891A (en) * 1983-10-25 1985-02-05 International Business Machines Corporation Dry-developed, negative working electron resist system
DE3563273D1 (en) * 1984-03-19 1988-07-14 Nippon Oil Co Ltd Novel electron beam resist materials
US5143814A (en) * 1984-06-11 1992-09-01 Hoechst Celanese Corporation Positive photoresist compositions with o-quinone diazide, novolak and propylene glycol alkyl ether acetate
US4550069A (en) * 1984-06-11 1985-10-29 American Hoechst Corporation Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US4600683A (en) * 1985-04-22 1986-07-15 International Business Machines Corp. Cross-linked polyalkenyl phenol based photoresist compositions
US4806458A (en) * 1985-10-28 1989-02-21 Hoechst Celanese Corporation Composition containing a mixture of hexa-alkyl disilazane and propylene glycol alkyl ether and/or propylene glycol alkyl ether acetate
US5039594A (en) * 1985-10-28 1991-08-13 Hoechst Celanese Corporation Positive photoresist containing a mixture of propylene glycol alkyl ethers and propylene glycol alkyl ether acetate
US4983490A (en) * 1985-10-28 1991-01-08 Hoechst Celanese Corporation Photoresist treating composition consisting of a mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US4692398A (en) * 1985-10-28 1987-09-08 American Hoechst Corporation Process of using photoresist treating composition containing a mixture of a hexa-alkyl disilazane, propylene glycol alkyl ether and propylene glycol alkyl ether acetate
US4948697A (en) * 1985-10-28 1990-08-14 Hoechst Celanese Corporation Positive photoresist with a solvent mixture of propylene glycol alkyl ether and propylene glycol alkyl ether acetate
DE3705896A1 (de) * 1986-02-24 1987-08-27 Tokyo Ohka Kogyo Co Ltd Verfahren zur herstellung eines fotoresistmusters auf einer substratflaeche und ein dafuer geeignetes schaumentfernungsmittel
US4873278A (en) * 1986-11-14 1989-10-10 General Electric Company Inhibition of irradiation yellowing in polysulfone compositions
EP0301641A1 (en) * 1987-07-23 1989-02-01 Koninklijke Philips Electronics N.V. Master disc and method of manufacturing a matrix
US4824758A (en) * 1988-01-25 1989-04-25 Hoechst Celanese Corp Photoresist compositions based on acetoxystyrene copolymers
EP0396254B1 (en) * 1989-04-03 1996-07-10 Kabushiki Kaisha Toshiba Photosensitive composition and pattern formation method using the same
US5298367A (en) * 1991-03-09 1994-03-29 Basf Aktiengesellschaft Production of micromoldings having a high aspect ratio
TW211080B (enExample) * 1991-12-12 1993-08-11 American Telephone & Telegraph
US5550004A (en) * 1992-05-06 1996-08-27 Ocg Microelectronic Materials, Inc. Chemically amplified radiation-sensitive composition
US5340687A (en) * 1992-05-06 1994-08-23 Ocg Microelectronic Materials, Inc. Chemically modified hydroxy styrene polymer resins and their use in photoactive resist compositions wherein the modifying agent is monomethylol phenol
EP0698825A1 (en) * 1994-07-29 1996-02-28 AT&T Corp. An energy sensitive resist material and a process for device fabrication using the resist material
US7550249B2 (en) * 2006-03-10 2009-06-23 Az Electronic Materials Usa Corp. Base soluble polymers for photoresist compositions
US7704670B2 (en) * 2006-06-22 2010-04-27 Az Electronic Materials Usa Corp. High silicon-content thin film thermosets
US7759046B2 (en) * 2006-12-20 2010-07-20 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8026040B2 (en) 2007-02-20 2011-09-27 Az Electronic Materials Usa Corp. Silicone coating composition
KR101523393B1 (ko) 2007-02-27 2015-05-27 이엠디 퍼포먼스 머티리얼스 코프. 규소를 주성분으로 하는 반사 방지 코팅 조성물

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1375461A (enExample) * 1972-05-05 1974-11-27
US3935331A (en) * 1975-01-09 1976-01-27 Rca Corporation Preparation of olefin SO2 copolymer electron beam resist films and use of same for recording
US4267257A (en) * 1976-07-30 1981-05-12 Rca Corporation Method for forming a shallow surface relief pattern in a poly(olefin sulfone) layer
US4289845A (en) * 1978-05-22 1981-09-15 Bell Telephone Laboratories, Inc. Fabrication based on radiation sensitive resists and related products

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62191850A (ja) * 1986-02-17 1987-08-22 Nec Corp ポジレジスト材料
JPS63218949A (ja) * 1987-03-06 1988-09-12 Sumitomo Chem Co Ltd ポジ型レジスト組成物
US6537736B1 (en) 1999-03-12 2003-03-25 Matsushita Electric Industrial Co., Ltd. Patten formation method

Also Published As

Publication number Publication date
JPH0151822B2 (enExample) 1989-11-06
DE3235108A1 (de) 1983-04-07
NL185806C (nl) 1990-07-16
DE3235108C2 (de) 1986-06-19
US4409317A (en) 1983-10-11
NL185806B (nl) 1990-02-16
NL8203701A (nl) 1983-04-18

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