JPS5850752A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5850752A
JPS5850752A JP14775181A JP14775181A JPS5850752A JP S5850752 A JPS5850752 A JP S5850752A JP 14775181 A JP14775181 A JP 14775181A JP 14775181 A JP14775181 A JP 14775181A JP S5850752 A JPS5850752 A JP S5850752A
Authority
JP
Japan
Prior art keywords
film
groove
layer
semiconductor substrate
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14775181A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0234179B2 (enrdf_load_stackoverflow
Inventor
Toshihiko Fukuyama
福山　敏彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14775181A priority Critical patent/JPS5850752A/ja
Publication of JPS5850752A publication Critical patent/JPS5850752A/ja
Publication of JPH0234179B2 publication Critical patent/JPH0234179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/763—Polycrystalline semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP14775181A 1981-09-21 1981-09-21 半導体装置の製造方法 Granted JPS5850752A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14775181A JPS5850752A (ja) 1981-09-21 1981-09-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14775181A JPS5850752A (ja) 1981-09-21 1981-09-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5850752A true JPS5850752A (ja) 1983-03-25
JPH0234179B2 JPH0234179B2 (enrdf_load_stackoverflow) 1990-08-01

Family

ID=15437317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14775181A Granted JPS5850752A (ja) 1981-09-21 1981-09-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5850752A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745081A (en) * 1985-10-31 1988-05-17 International Business Machines Corporation Method of trench filling
JPS63116445A (ja) * 1986-11-04 1988-05-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5525501A (en) * 1978-08-04 1980-02-23 Supensaa Hetsuzu Inc Insert for ignition deck of internal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5525501A (en) * 1978-08-04 1980-02-23 Supensaa Hetsuzu Inc Insert for ignition deck of internal

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745081A (en) * 1985-10-31 1988-05-17 International Business Machines Corporation Method of trench filling
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
JPS63116445A (ja) * 1986-11-04 1988-05-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet

Also Published As

Publication number Publication date
JPH0234179B2 (enrdf_load_stackoverflow) 1990-08-01

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