JPH0234179B2 - - Google Patents

Info

Publication number
JPH0234179B2
JPH0234179B2 JP56147751A JP14775181A JPH0234179B2 JP H0234179 B2 JPH0234179 B2 JP H0234179B2 JP 56147751 A JP56147751 A JP 56147751A JP 14775181 A JP14775181 A JP 14775181A JP H0234179 B2 JPH0234179 B2 JP H0234179B2
Authority
JP
Japan
Prior art keywords
groove
film
polycrystalline silicon
oxidation
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56147751A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5850752A (ja
Inventor
Toshihiko Fukuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14775181A priority Critical patent/JPS5850752A/ja
Publication of JPS5850752A publication Critical patent/JPS5850752A/ja
Publication of JPH0234179B2 publication Critical patent/JPH0234179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/763Polycrystalline semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743Making of internal connections, substrate contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
JP14775181A 1981-09-21 1981-09-21 半導体装置の製造方法 Granted JPS5850752A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14775181A JPS5850752A (ja) 1981-09-21 1981-09-21 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14775181A JPS5850752A (ja) 1981-09-21 1981-09-21 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5850752A JPS5850752A (ja) 1983-03-25
JPH0234179B2 true JPH0234179B2 (enrdf_load_stackoverflow) 1990-08-01

Family

ID=15437317

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14775181A Granted JPS5850752A (ja) 1981-09-21 1981-09-21 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5850752A (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4745081A (en) * 1985-10-31 1988-05-17 International Business Machines Corporation Method of trench filling
US4767722A (en) * 1986-03-24 1988-08-30 Siliconix Incorporated Method for making planar vertical channel DMOS structures
JPS63116445A (ja) * 1986-11-04 1988-05-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
US4835586A (en) * 1987-09-21 1989-05-30 Siliconix Incorporated Dual-gate high density fet

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5525501A (en) * 1978-08-04 1980-02-23 Supensaa Hetsuzu Inc Insert for ignition deck of internal

Also Published As

Publication number Publication date
JPS5850752A (ja) 1983-03-25

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