JPS5850737A - 半導体素子の製造装置 - Google Patents

半導体素子の製造装置

Info

Publication number
JPS5850737A
JPS5850737A JP56150244A JP15024481A JPS5850737A JP S5850737 A JPS5850737 A JP S5850737A JP 56150244 A JP56150244 A JP 56150244A JP 15024481 A JP15024481 A JP 15024481A JP S5850737 A JPS5850737 A JP S5850737A
Authority
JP
Japan
Prior art keywords
substrate
chamber
electron beam
storage chamber
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56150244A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6322610B2 (show.php
Inventor
Hayaaki Fukumoto
福本　隼明
Hideaki Arima
有馬　秀明
Tadashi Nishimura
正 西村
Masahiro Yoneda
昌弘 米田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56150244A priority Critical patent/JPS5850737A/ja
Publication of JPS5850737A publication Critical patent/JPS5850737A/ja
Publication of JPS6322610B2 publication Critical patent/JPS6322610B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P34/00—

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Drying Of Semiconductors (AREA)
JP56150244A 1981-09-21 1981-09-21 半導体素子の製造装置 Granted JPS5850737A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56150244A JPS5850737A (ja) 1981-09-21 1981-09-21 半導体素子の製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56150244A JPS5850737A (ja) 1981-09-21 1981-09-21 半導体素子の製造装置

Publications (2)

Publication Number Publication Date
JPS5850737A true JPS5850737A (ja) 1983-03-25
JPS6322610B2 JPS6322610B2 (show.php) 1988-05-12

Family

ID=15492706

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56150244A Granted JPS5850737A (ja) 1981-09-21 1981-09-21 半導体素子の製造装置

Country Status (1)

Country Link
JP (1) JPS5850737A (show.php)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232413A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体装置の製造方法及びその製造装置
JPS60216549A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
JPS60216555A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
JPS60229338A (ja) * 1984-04-26 1985-11-14 Agency Of Ind Science & Technol 電子ビ−ムによるパタ−ン形成法
JPS60236233A (ja) * 1984-05-10 1985-11-25 Agency Of Ind Science & Technol イオンビ−ムによる微細パタ−ン形成法
JPS6137152A (ja) * 1984-07-31 1986-02-22 小木曾　誠 義歯維持用インプラント
JPS61179573A (ja) * 1985-02-04 1986-08-12 Agency Of Ind Science & Technol プレ−ナ型半導体装置
JPS61193656A (ja) * 1985-02-22 1986-08-28 京セラ株式会社 複合インプラントとその製造方法
JPS61248522A (ja) * 1985-04-26 1986-11-05 Mitsubishi Electric Corp 不純物層形成装置
JPS62156870A (ja) * 1985-12-28 1987-07-11 Matsushita Electronics Corp 固体撮像装置の製造方法
JPS63147455A (ja) * 1986-12-11 1988-06-20 株式会社神戸製鋼所 複合インプラント部材
JPH07260698A (ja) * 1994-03-18 1995-10-13 Sony Corp 異物検査装置及び異物検査方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140560A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Method of monitoring homoepitaxy film thickness
JPS54162452A (en) * 1978-06-13 1979-12-24 Mitsubishi Electric Corp Manufacture of semiconductor and its unit
JPS5638464A (en) * 1979-09-03 1981-04-13 Mitsubishi Electric Corp Formation of nitride film
JPS5679438A (en) * 1979-12-04 1981-06-30 Toshiba Corp Working device for charged particle beam

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51140560A (en) * 1975-05-30 1976-12-03 Hitachi Ltd Method of monitoring homoepitaxy film thickness
JPS54162452A (en) * 1978-06-13 1979-12-24 Mitsubishi Electric Corp Manufacture of semiconductor and its unit
JPS5638464A (en) * 1979-09-03 1981-04-13 Mitsubishi Electric Corp Formation of nitride film
JPS5679438A (en) * 1979-12-04 1981-06-30 Toshiba Corp Working device for charged particle beam

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59232413A (ja) * 1983-06-16 1984-12-27 Toshiba Corp 半導体装置の製造方法及びその製造装置
JPS60216549A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
JPS60216555A (ja) * 1984-04-12 1985-10-30 Fuji Electric Corp Res & Dev Ltd 半導体装置の製造方法
JPS60229338A (ja) * 1984-04-26 1985-11-14 Agency Of Ind Science & Technol 電子ビ−ムによるパタ−ン形成法
JPS60236233A (ja) * 1984-05-10 1985-11-25 Agency Of Ind Science & Technol イオンビ−ムによる微細パタ−ン形成法
JPS6137152A (ja) * 1984-07-31 1986-02-22 小木曾　誠 義歯維持用インプラント
JPS61179573A (ja) * 1985-02-04 1986-08-12 Agency Of Ind Science & Technol プレ−ナ型半導体装置
JPS61193656A (ja) * 1985-02-22 1986-08-28 京セラ株式会社 複合インプラントとその製造方法
JPS61248522A (ja) * 1985-04-26 1986-11-05 Mitsubishi Electric Corp 不純物層形成装置
JPS62156870A (ja) * 1985-12-28 1987-07-11 Matsushita Electronics Corp 固体撮像装置の製造方法
JPS63147455A (ja) * 1986-12-11 1988-06-20 株式会社神戸製鋼所 複合インプラント部材
JPH07260698A (ja) * 1994-03-18 1995-10-13 Sony Corp 異物検査装置及び異物検査方法

Also Published As

Publication number Publication date
JPS6322610B2 (show.php) 1988-05-12

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