TWI288424B - Inspection apparatus and inspection method - Google Patents

Abstract

This invention provides an inspection apparatus and inspection method for inspecting a semiconductor device. The inspection apparatus is adapted for inspecting a test piece such as a wafer, for defectsiAfeature dimension, and surface potential. Charged particles are irradiated from a primary optical system to a test pieceiAand secondary charged particles released from the test piece are separated from the primary optical system and are directed to a detector through a secondary optical system. The irradiation of the charged particles is performed while the test piece is moving. The points of irradiation of the charged particles are so arranged in N rows along the direction of moving of the test piece, and in M columns in the direction perpendicular to the moving direction. Each row of the irradiation points of the charged particles is sequentially offset a given amount in the direction perpendicular to the moving direction of the test piece.

Description

[Technical Field] The present invention relates to an inspection apparatus for inspecting a defect or the like of a pattern formed on a surface of an inspection object by using a plurality of electron beams, and more specifically When the defect of the wafer is inspected in the manufacturing process, the inspection target is irradiated with an electron beam to detect secondary electrons that are to be changed on the surface of the inspection object to form the image data, and the surface of the inspection object is formed by high-productivity inspection based on the image data. A graphic inspection device, and a device manufacturing method using the inspection device to manufacture a device with good yield. The present invention relates to a charged particle beam device for detecting secondary charged particles generated at an irradiation spot of a test piece by irradiating a test piece with a charged particle beam, and a device manufacturing method for performing defect inspection by the device. The present invention relates to a semiconductor manufacturing method for irradiating a charging electron beam device to a test piece placed on a χγ table, and a defect inspection device and a light exposure device using the same. The present invention relates to a defect inspection apparatus and method for inspecting a defect of a test piece by comparing a reference image of a sample of a test piece such as a semiconductor wafer prepared in advance, and a method of manufacturing a semiconductor device using the defect inspection device. This month is an electronic line device for illuminating an electron beam on a test piece by measuring one electron line of the irradiation point to perform various inspections on the test piece, particularly regarding the minimum line width formed on the _conductor wafer. - The following integrated circuit pattern is used to perform defect inspection, CD (crytical dimension) measurement, coincidence accuracy measurement, and potential measurement of electronic line devices with high productivity. The present invention relates to a plurality of images obtained by irradiating an electronic wire that has been discharged by electrons to an opening plate having an opening of a plurality of (correction page) 312765 5 1288424', and then injecting the test piece into the test piece. The secondary optical season in which the optical system is separated once, and the Guangyue optical system expands the image to be projected on the device manufacturing method characterized by the use of the electron beam device to evaluate the wafer in the manufacturing process.

The present invention relates to a defect inspection, a line width measurement, a coincidence accuracy measurement, and the like of a high-speed operation analysis when the device is operated at a minimum line U: the following is performed at a high productivity. A device manufacturing method that performs evaluation to improve yield. ^ The system is a device manufacturing method for an electronic wire device and the use of the electronic wire device, and more specifically relates to a defect in a test piece having a minimum line: a device pattern of 0.1 (four) or less with high productivity and high reliability. Check and line measurement 2 phases. Accuracy measurement, surface potential measurement, and high-precision time-decomposition energy measurement = device mounting method and device manufacturing method in which the electron beam device is used to evaluate the crystal in the manufacturing process to improve the yield. In view of the above, an object of the present invention is to provide an electronic wire device capable of performing focus calibration of an electro-optical system in a short period of time, and a method of manufacturing a semiconductor device using the same. The present invention relates to an electronic wire device and a device manufacturing method using the same, and more particularly relates to high productivity and high reliability for a test piece having an acoustic pattern having a minimum line width of 0.1//m or less. An electric wire device that performs defect inspection, and a device manufacturing method that uses the electronic wire device to perform a word value on a wafer in a manufacturing process to improve yield. 6 (Revision page) 312765 1288424 The device is used to evaluate the pattern formed on the surface of the test piece, etc.; in detail, it is high-reliability and high reliability for devices with the smallest line width on the test piece. The electronic line two-time decomposition potential measurement for the evaluation of the lack of performance, and the device manufacturing method for using the clothing to evaluate the test piece during and after the manufacturing. i Eight Shih was invented about the EXB separator (also known as the deflector) and used the ExB half! Body wafer inspection device. In particular, it is about the field of the same magnetic field strength and the same electric field strength in the optical axis: β 乂 乂 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Inspection device for round defect inspection, graphic line width measurement, graphic coincidence and precision measurement, and high time decomposition energy potential measurement. The present invention relates to a device for illuminating a charged electronic wire 2 on a test piece placed on a workbench, which is a differential exhaust gas in the periphery of the lens barrel without a differential exhaust mechanism at the χγ table. The charged electronic wire device of the mechanism and the device for detecting the appearance and the use of the device, in particular, the semiconductor manufacturing method using the device. The present invention relates to a device which evaluates high productivity and high reliability to a wafer or the like having a pattern having a minimum line width of 0.1/zm or less, and a method of manufacturing the device at a good yield by using the device. The design rule of the semi-body manufacturing process is welcoming the era of 100 nm, and the production form is being transferred from a large-scale production represented by DRAM to a small-scale production such as SOC (System on chip). With the transfer of the above-mentioned form, the number of manufacturing processes is increased, and it is increased to 312,765, and 12,884,24 per process (correction page), and the yield of the order is necessary, and it is important for the defect inspection caused by each process. The present invention relates to semiconductor manufacturing. In the process, the device used for wafer re-inspection after each process is a method and device for inspecting the use of an electronic wire, and a device manufacturing method using the device. [Prior Art] Conventional techniques relating to the inspection apparatus of the present invention are commercially available using a scanning electron microscope (CEM). The device performs scanning by calibrating into small electron lines with very small scanning line widths, and then using a secondary electron detector to detect secondary electron rain emitted from the inspection object to form an SEM image, which is different from the SEM image. The same locations on the die are compared to each other to detect defects. Although it is proposed to use a plurality of electronic wires, that is, a multi-beam to improve productivity, the applicant only mentions how to form a plurality of electron wires and how to detect a plurality of electron wires, but completes the defect inspection device as a system. The device does not yet exist. A scanning pattern for the manufacture of a semiconductor device and a (four) inspection for forming a semiconductor crystal L are performed using a scanning electron microscope. The scanning electron microscope scans the surface of the test piece by calibrating one of the extremely thin wires, and in order to detect the secondary electrons emitted from the test piece, it takes a long time to inspect all of the four pieces. In order to solve the above problems, it has been proposed to use electrons emitted from a plurality of electron sources to be imaged on the surface of the test piece through a decelerating electric field lens, and to perform scanning so that the secondary electrons emitted from the surface of the test piece are also flen. (4) The way in which n is biased and leads to a complex detector (Japanese Journal of Applied Physics, Vol. 28, No. l〇 (Revision) 312765 1288424

October, 1989, ρρ· 2058-2064). a device for exposing a surface of a test piece by a pattern of a semiconductor circuit or the like by irradiating a charged electron beam such as an electron beam or the like on a surface of a test piece such as a semiconductor wafer, or for inspecting a pattern formed on a surface of the test piece, or A device for performing ultra-precision processing on a test piece by irradiating a charged electron beam uses a stage in which the test piece is positioned with good precision in a vacuum.定位 When the above-mentioned work σ is required to be positioned with a very high precision, it is a structure in which the hydrostatic bearing is supported in a non-contact manner. Here, in order to prevent the high-pressure gas supplied from the static suction from being directly exhausted in the vacuum chamber, the range of = forms a differential reduction mechanism for discharging the high-pressure gas to maintain the vacuum of each chamber.苐18A, 18B diagram shows the customary ^^τ a (10) diagram *, in the composition of straight 4: example. For example, in the 18A, the housing 2GG8 of the electronic core t+u is installed to generate the charged green 以 green to the test piece Zhao Ying Xiu Yu Qiu. ..., Yu Zhi ▼ the front of the tube 2001 of the electric electronic line device The electronic line irradiation department reads. The inside of the cylinder is evacuated by a vacuum piping 2: vacuum chamber ‘, and the chamber c is irradiated with a test piece s such as a lens barrel 2 〇〇 1 & The heart portion 2002 is placed on the lower side of the _5 =: the work table _ ... to the movable portion, the white singer 1 to the movable 4 2005 is the movable portion 2 η) ηβ in the X direction, and the configuration of the X-direction is free Movable 帑 2〇m 6- moveable configuration. M_ is the surface of the γ-direction movable portion 2 面对 in the y-direction movable portion 2 facing the X-direction movable portion _ (correction page) 31276 ί 9 1288424 surface j〇e 〇 6a (the left and right sides in Fig. 18A and The following) is provided with a plurality of hydrostatic bearings 2〇〇9a, which are moved by the hydrostatic bearing 2〇〇9a to maintain a slight gap between the guide surface 2006a and the γ direction (the left and right directions in the first figure) ). Similarly, the x-direction movable portion 2006 is provided with a plurality of hydrostatic bearings = 〇〇 9b, which are maintained between the hydrostatic bearing 2009b and the guide surface 2007a, and the small space PI; can move in the χ direction (j 8 A In the figure, it is the left and right direction). A differential exhaust mechanism is provided around the hydrostatic bearing so that the high-pressure gas supplied to the hydrostatic bearing does not leak into the vacuum chamber C. Figure 19 shows the differential exhaust mechanism. That is, the double grooves 2018 and 2 〇 = ' are formed around the hydrostatic bearing 2 just b. Vacuum is often applied by a vacuum pipe (not shown) and a vacuum mill. In the above-described configuration, the Y-direction movable portion 2005 is moved in the direction of the ¥ in a vacuum in a non-contact state. The double grooves 2G18 and 2G17 are formed in a state of surrounding the hydrostatic bearing on the surface of the hydrostatic bearing 9a provided with the movable P 20^5. Regarding the hydrostatic bearing, a known configuration can be used, and the description thereof is omitted here. = 18A, 18B can be clearly seen 'the direction of the movable direction of the X-direction movable part 2006 in the w direction is formed into a concave shape with an opening above, and has the same static bearing and groove as the factory:::Π _5, on the worktable 20 °7 is a non-盥X square bamboo two can move freely. By the combination of the second end of the movable portion 2005, the test (4) W, that is, the electric beam irradiation unit 2〇〇2, can be moved to the water, and the desired position on the test piece can be irradiated with charged electrons, 试 test piece = Second, in the bulk manufacturing process, the defect is detected by using a defect to the test piece such as a semiconductor wafer. The secondary electrons are inspected for the defect inspection. The application of the defect (Revision page) 312765 10 1288424 is like the technique of knowing the technology to automate and streamline the defect inspection. The technique detects the secondary electrons and compares the graphic image data of the surface of the test piece on the surface of the test piece with the reference image data of the surface of the test piece which is memorized by computer, and then automatically calculates the result according to the calculation result. Determine if the test piece is defective. Nowadays, in particular, in the field of semiconductor manufacturing, the high definition of graphics is progressing, and the demand for detecting fine defects is gradually increasing. In this state, the defect inspection device for applying the above-described image recognition technology also requires a higher understanding of the method of continuously moving the test piece, and scanning the electron beam in a direction perpendicular to the moving direction ( Kaiping 1 (M34757). The electron beam is applied to the surface of the test piece in an oblique direction, and the surface of the test piece is a secondary element but the projection in the direction of the -axis is at an equal interval. Knowing that the electrons of the electronic robbing of the plurality of electrons are divided into complex electronic lines, so that the electronic wires are scanned in the - direction, and the method of continuously moving the test piece in the right angle direction to perform the inspection is also known. A mask pattern suitable for a semiconductor device or an electron beam device formed for defect inspection of a semiconductor wafer= shape is known to have a plurality of light beams which are irradiated by an open plate having a plurality of openings: two pieces 'The secondary electrons that are released from the test piece are then placed on the detector surface to check the intensity of the sub-line of the electron beam discharged from the defective shotgun on the test piece. However, the above-mentioned conventional device is installed. Does not consider the electrical angle dependence, and does not care about the angle of illumination. (Revision page) 312765 11 1288424 -= That is, the electron beam released by the electron is in the direction of the wire although the highlight HI sub-f is not considered along with the optical axis The brightness (strength) of the electron beam is gradually reduced. The detection rate of the secondary electrons emitted by the pattern is obtained in the vicinity of the optical axis, but the position is detected at the position away from the optical axis. The problem of the electric detection rate is not considered in the conventional electronic wire device. The electronic wire device for applying a plurality of electronic wires to the inspection and the wire width measurement of the circuit having the fine circuit pattern of the super LSI circuit It is known to the A. Such an electronic wire device using a plurality of electronic wires is a solution for solving the problem that the fine circuit pattern is too f in one electronic line. For example, in the electronic wire device of the plurality of electronic wires, for example, The electron emitters are arranged in a matrix-shaped electron beam device. Since the interval between the detectors of the reflected electrons (secondary electrons) is extremely small, in order to solve the problem, the illumination is received. The reflective electrons or secondary electrons in the field are easy to enter, and the "failure of detection accuracy" cannot be known. There is a method of providing an aperture between the test piece and the detection surface. The image on the test piece is scanned by an electronic line. In order to check the 〇·(6)程<also lacks fe'' ^ to solve the problem that it is too time-consuming to reduce productivity, and the electrons are irradiated by a single electron to the mask having a plurality of 幵1 An electronic wire device for forming a plurality of electronic wires. -= A test piece having a minimum line width of 装置·l //m or less is a piece of material, and a P-heart is inspected by the sun. On the other hand, there is a check and evaluation device using an electronic wire. Although the electronic line has a resolution of the South, the productivity is too small and there is a problem in the productivity (revision page) 312765 1288424. In order to increase the productivity, the electron beam is laid by the plurality of electron beams, and the electron beam emitted from the single electron gun is irradiated to the plurality of openings, and the surface of the test piece is scanned by the electron line passing through the opening of the temple (hereinafter referred to as the test piece surface). Then, the electron beam device for guiding the secondary electrons generated by the respective images to the detectors of the plurality of detectors is known. - The scanning result of the four electron beams is evaluated for the gas = surface = precision formed on the semiconductor wafer or the like. It is necessary to consider the height of the test piece: 匕, because the height of the test piece is different, the surface of the test piece = the electron line is focused on the opposite of the pair of lenses of the figure: the focus condition is deviated and the resolution is lowered, so that the The implementation of the second grade as the release of the judgement has been proposed to test the height of the test piece using the reflection of the test piece, and then determine the knot =;, =: =, the electronic learning system of the test piece, control two:: The current and the electric tree are electronically focused on the electrical system. However, the space between the bevel + face and the underside of the electron optical system is set as follows: :\ by = the interval between the test pieces is lower than the actual f To be A, 2 = face and electron The optical system can not ignore the problem of the electron optical system. ^ If the interval is increased, the focus and electro-optical system of the electro-optical system must be solved at the same time. There is no proposal. 'The problem of the difference, but the method is 'electronic For the focusing of the optical system, not only the distance between the test piece surface and the electronic light (correction page) 312765 13 1288424, but also the charging state on the test piece surface and the space charge effect of the electronic wire must be considered. Electron optical measurement of the focus-related parameters of the electro-optical system may cause errors. - Furthermore, when the excitation current of the magnetic lens included in the electro-optical system is adjusted and the focus is actually set, it is necessary to have a longer Since the excitation current is set to a predetermined value until the focal length of the optical 2 optical system reaches a stable time, that is, a long settling time is required, so that it is difficult to perform focusing at a high speed. When the focus of the electro-optical system is changed by changing the excitation voltage of the electrostatic lens, it is necessary to change the high voltage applied to the electrostatic lens, so that a longer settling time is also required. In addition, the problem of low productivity is also evaluated by using an electronic wire. The present invention has been made to solve the above problems, and an object thereof is to provide an electronic teaching device that applies electro-optics and performs focusing of an electro-optical system in a short time, and uses A method of manufacturing a semiconductor device of the device. When performing defect inspection on a test piece having a device pattern having a minimum line width of 〇·1//m or less, if the light is used, the resolution is limited by the refraction of light. Therefore, there is an inspection and evaluation device using an electronic wire. Although the electronic wire is used to improve the resolution, the productivity is too small, and there is a problem in productivity. In order to increase the productivity, the electronic wire device using a plurality of electronic wires is about to be single- The electron beam is discharged from the plurality of openings, and the test piece is scanned by the electron wires passing through the openings, and the secondary electrons emitted from the images are crosstalked to the detectors to check the test pieces. The electronic line device has an application. For the observation and evaluation of the test piece containing the insulating material, there are various kinds of 14 (correction page) 312765 1288424 Π Π 技术 , , , , , , , , , , , 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描 扫描A device for charging a charge function in a ping-charge state (-eup) state, such as a line current, an absorption power to a test piece, an amount of reflected electrons from an irradiation device, and a secondary electron emission amount, is known. Conventionally, the electric field and the magnetic field are orthogonal to each other. The particles are straight in the direction orthogonal to the electric field and the magnetic field to carry out the energy division type energy _ _. The filter cancels the biasing action of the electron line generated by the electric field by the electric power generated by the magnetic field, and only allows the charged electrons having a specific energy in the electron line to go straight. The above ExB type energy filter has been proposed as shown in Fig. 54. As shown in Fig. 54, 6001 and 嶋' are magnetic reversals held at the ground potential, and 6002 and 6002 are electrodes. The electrode 2 is applied with electricity (4), the electrode 6002' is applied with electricity-V, and the absolute value of the two micro-materials (4) is equal and the y-electron is straight into the direction orthogonal to both the electric field and the magnetic field, that is, /, the direction of the surface of the figure is vertical. 15 1 φ ^ on the surface of the test piece such as a half-body sun circle or the like by irradiating a twisted wire of an electron beam or the like on the surface of the test piece by a pattern of a semiconductor circuit or the like = or a pattern formed on the surface of the test piece The device that performs the inspection, or the device that uses the electron beam to perform ultra-precision twisting on the test piece, uses the platform that locates the test piece with good precision in the real S. When the positioning of the upper αι σ is very high precision, it is used for the work of the table [bearing ^ non-contact type support. Here, in order to make the static pressure car: ', the pressure gas is not directly exhausted in the vacuum chamber, the differential exhaust mechanism for discharging the high-pressure gas is formed in the static consumption to maintain the true (Revision page) 312765 1288424 Vacuum degree of the empty chamber. Figs. 18A and 18B show an example of the conventional one of the conventional techniques. As shown in the figure, the housing 2008 constituting the vacuum chamber C is mounted to generate a charged electron line. The front end portion of the lens barrel 2〇〇1 of the charged electron beam device irradiated with the test piece, that is, the charged electron beam irradiation unit 2000. The test piece S is detachably held by the test piece stage 2004. Regarding the 18A, 18B The other structure of the table shown in the drawing will be described later. & A differential exhaust mechanism is provided around the hydrostatic bearing 20091) so that the high-pressure gas supplied to the hydrostatic bearing does not leak into the vacuum chamber c. The differential venting means forms a double groove 2017 and 2018 around the hydrostatic bearing 2〇〇9b, and is vacuumed by a vacuum pipe and a vacuum pump (not shown). The Y-direction movable portion 2005 is vacuumed by the above configuration. Non-contact type ^ support and move freely in the γ direction. 2〇17 and 2〇18 are formed in a state of surrounding the hydrostatic bearing on the surface of the hydrostatic bearing 200913 provided with the y-movement portion 2005. The movement of the γ-direction movable portion 2〇〇5 and the χ-direction movable portion 2006 is performed. By combining, the test piece s can be moved to an arbitrary position in the horizontal direction to the front end portion of the lens barrel, that is, to the charged electron beam irradiation portion 2002, so that the desired position on the test piece can be irradiated with the charged electron beam. The combination of the hydrostatic bearing and the differential exhaust mechanism is equipped with a differential exhaust mechanism. Compared with the static pressure bearing type platform used in the atmosphere, the structure is complicated and large, so that the reliability of the work platform is low and becomes high. Cost = Problem. In the electronic material system, a method of applying a symmetrical magnetic double lens (dGublet 丨 (4)) is known for the method of correcting the magnification color difference and the rotational color difference. The electrostatic lens system does not have a rotational color difference. Therefore, the symmetrical double lens correction (correction page) 312765 16 1288424 - magnification color difference. With the high integration of the semiconductor package and the refinement of the pattern, it is possible to inspect the apparatus with high decomposition, energy, and high productivity. 1〇〇nm When the defects of the wafer substrate are designed to be required, the decomposition energy of 100 nm or less is required, and the increase in the number of manufacturing processes and the inspection amount by the device are required, so that high production i is required, and the inspection progresses with the multilayering of the device. The device also requires the function of detecting the contact failure (electrical defect) of the wire for connecting the wiring between the layers. At present, the defect inspection device using the optical method is mainly used, but the viewpoint of the decomposition energy and the inspection of the contact failure is expected in the future. The defect inspection apparatus using an electronic wire is the mainstream of the inspection apparatus instead of the light type, but the electronic wire type defect inspection apparatus has a disadvantage in productivity as compared with the apparatus which does not apply light. At present, it is required to develop a high-decomposition energy, high productivity, and electrical inspections. The decomposition by the light method is a limit of 1/2 of the wavelength of the light to be used, and the practical visible light is 〇·2//ιη. On the one hand, in the method of using an electron beam, a scanning electron beam method (SEM method) is generally put into practical use, and the decomposition energy is 〇·1/am, and the inspection time is 8 small/grazing (2 〇cm wafer). The electronic wire method has the remarkable feature of being able to check for electrical defects (disconnection of the wires, poor conduction, poor continuity of the wire ends, etc.). However, due to the very long inspection time, it is expected to check the development of a fast defect inspection device. Since the inspection apparatus is generally expensive and has a lower productivity than other processing apparatuses, it is currently used only after an important process, for example, after etching, film formation, or CMp (Chemical Mechanical Polishing) flattening treatment. (Revision page) 312765 1288424 An inspection apparatus using an electronic line scanning (SEM) method will be described below. The SEM type inspection apparatus focuses the electron beam into a thin line (the line diameter corresponds to the decomposition energy) and scans the electron beam in a linear shape. On the one hand, the upper stage is moved in a right angle direction of the scanning of the electron beam to illuminate the observation field with a planar electron beam. The scanning width of the electronic wire is generally 1 〇 〇 # m. The secondary electron generated from the test piece by the above-mentioned electron beam (referred to as a primary electron line) focused on a thin line is detected by a detector (sc inti 1 lat or + photo multi pi er) or a semiconductor method. Detection is performed by a detector (PIN diode type) or the like. Then, the coordinates of the irradiation position are combined with the amount of secondary electrons (signal intensity) to be imaged, and memorized in the memory device, or the output image is on the CRT (cathode ray officer). The above is the principle of SEM (Scanning Electron Microscope), and the artifact obtained in this way is used to inspect the defects of the semiconductor (usually Si) crystal in the process. The inspection speed (equivalent to productivity) is determined by the amount (current value) of the primary electron beam, the electron beam diameter, and the response speed of the detector. Electronic wire diameter 〇 · 1 /zm (considered as decomposition energy), current value 1〇〇nA, detector response speed 100MHz is the current highest value, the inspection speed of this state is 2μm diameter wafer A herd is about 8 hours. This inspection speed is too slow (1/20 or less) to be a big problem (disadvantage). On the one hand, in order to improve the inspection speed of the SEM method, an SEM (complex electron SEM) using a plurality of electron lines is known. Although the method can improve the inspection speed of the number of the plurality of electronic wires, the plurality of electron wires are required to be obliquely incident, and then the plurality of electron beams reflected from the test piece are taken out obliquely, that is, the detection benefit can only be obtained. The secondary electrons emitted by the test piece in the oblique direction are raised, 18 (correction page) 312765 1288424. Since the image is shadowed and it is difficult to separate the individual electron lines from the plurality of electronic lines, the secondary electronic signals are mixed with each other. problem. SUMMARY OF THE INVENTION The defect inspection device of the SEM is small in size, and of course, the size of the object is small and the scanning line width is small. Further, if the electron beam is increased to increase the productivity, the crystal having an insulator on the surface is charged, and there is a problem that a good SEM image cannot be obtained. In the case of a device using a plurality of electron beams, not only the electro-optical system but also the entire configuration of the device is still unknown, and the interaction between the electro-optical system and other attached systems has not been known. In addition, as the diameter of the wafer to be inspected progresses, the accompanying system needs to be able to correspond thereto. The present invention has been made in view of the above problems, and an object of the invention is to provide an electro-optical system using a plurality of electron beams, and an inspection apparatus for improving the productivity by combining the electro-optical system and other constituent devices constituting the inspection device. . θ = Another object to be solved by the invention is to provide an inspection apparatus capable of inspecting an inspection object with good precision in order to solve the problem of charging of the SEM problem. Another object to be solved by the present invention is to provide a device manufacturing method which is excellent in yield by inspecting an inspection object such as Crystal® using the above-described inspection apparatus. This month's k is an apparatus for performing an inspection on a patterned inspection object to inspect the pattern of the inspection object. The inspection device includes an electron source lens, an ExB separator, and at least one enlarged lens, and (correction page) 312765 19 1288424 irradiates the first electron beam to the inspection object for forming a plurality of primary electron beams. The secondary electrons emitted by the object are accelerated by the object lens and separated by the ExB separator, and then the secondary electron image is projected by the enlarged lens of at least one of the foregoing. The inspection apparatus further includes: a detector for detecting a plurality of secondary electron images projected by the electro-optical system; and a table device for holding the inspection target to move relative to the electro-optical system; The working device is housed and controlled in a vacuum environment; the aforementioned work in the aforementioned working chamber. a loader for supplying an inspection object on the apparatus; a potential application mechanism provided in the φ working chamber to apply a potential to the inspection object; and a viewpoint to determine the position of the inspection object to the electron optical system 'Τ' A describes the surface of the object to be controlled to control the adjustment (ai (10) adjustment control skirt. The aforementioned vacuum chamber is supported by a vibration interrupting device for blocking vibration from the ground.

The loader of the inspection apparatus includes a first loading chamber and a second loading chamber that are each controllable in an independent environment; and the inspection object is transported between the U-bearing chamber and the outside thereof. The second transport unit is provided in the second loading chamber for transporting the second transport unit between the first loading chamber and the table device, and the j device is further provided for supply inspection. The object may be in a mini environment space that is spaced apart as described above. Further, (4) the seat of the inspection object on the work station device may be provided by the adjustment control device, and the coordinates of the object to be inspected by the pattern of the object are used, and the above-mentioned (correction page) 312765 20 1288424 is checked. The position adjustment of the object includes the coarse position adjustment performed in the small environmental space, and the position adjustment in the χ γ direction and the position adjustment in the rotation direction performed on the table device. Another invention of the present application is a device manufacturing method for performing defect inspection on a wafer in or after a manufacturing process by a inspection device. The conventional device fails to prevent crosstalk between the plurality of electronic wires, and the secondary electrons emitted from the test piece surface cannot be detected with good efficiency. SUMMARY OF THE INVENTION The present invention has an object of providing a charged particle beam device capable of preventing crosstalk and introducing secondary electrons to be emitted into a detector with good efficiency. The charged particle beam device 1000 of the present invention comprises at least one of a plurality of primary charged particle beams irradiated to the primary optical system of the test piece, and at least one secondary optical light for introducing the secondary charged particles into the at least one detector. And the plurality of primary charged particle beams are irradiated to each other at a position away from the distance resolution of the secondary optical system. Further, the primary optical system is provided with a function of scanning the primary particle line at an interval wider than the irradiation position of the plurality of charged particle lines. When the hydrostatic bearing and the differential exhaust mechanism are combined as shown in the 18A and B stages on the moving table, the hydrostatic bearing 2009 facing surfaces 2006a and 2007a are the high-pressure gas environment reciprocating in the hydrostatic bearing portion. Between the vacuum environment in the chamber. At this time, the gas is sucked between the high-pressure gas environment on the guide surface, and the state in which the sucked gas is released when exposed to the vacuum environment is repeated. Therefore, the degree of vacuum in the chamber will deteriorate every time the mobile station is moved, which constitutes a problem that the test piece cannot be contaminated by the above-described exposure, inspection, and processing of the charged electron beam. 21 (Revision page) 312765 1288424 One of the problems to be solved by the present invention is to provide a charged electronic wire device which can perform inspection and processing by using π electric electron beam to prevent the reduction of the positive hollowing degree. Another object to be solved by the present invention is to provide a vacuum sealing mechanism having a non-contact support mechanism for a hydrostatic bearing and a differential exhaust gas to generate pressure between the field of irradiation of the charged electron beam and the support portion of the hydrostatic bearing. Poor charged electronic line device. Another object to be solved by the present invention is to provide a charged electron beam device that reduces the gas released from the surface of a component facing a hydrostatic bearing. Still another object to be solved by the present invention is to provide a defect inspection device for inspecting a member using the above-described charged electron beam device, or a light exposure device for providing a pattern on a surface of a test piece. Still another object to be solved by the present invention is to provide a semiconductor manufacturing method for manufacturing a semiconductor device using the above-described charged electron beam device. The present invention provides a device in which a test piece is placed on a χγ table, and the test piece is privately moved to a position in a vacuum to irradiate the surface of the test piece with a charged electron beam. The device is provided with a non-contact support mechanism of a static pressure bearing in its 台 ” "" vacuum sealing mechanism of differential exhaust, and a portion for irradiating the charged electron beam on the surface of the test piece and a hydrostatic bearing of the χγ table The gap between the support parts is reduced, and the gap between the support parts of the charged electron beam is generated. The pressure difference is generated between the support parts of the plated hydrostatic bearing. 〃 ^Yifeng (4) Support for the Saitama Station on which the test piece is placed The mechanism is a non-contact support mechanism for the pressure bearing, and a vacuum sealing mechanism for moving and exhausting is provided around the hydrostatic bearing to use the high pressure gas in the hydrostatic bearing to not leak into the vacuum chamber. The high-precision setting is performed in the vacuum, and the space is formed to reduce the conduction between the charged electron beam irradiation device 2 ι (correction page) 312765 22 1288424, so that the slide portion of the stage is composed of high-pressure gas. When the part moves to a vacuum environment, even if the gas sucked on the surface of the sliding portion is released, the emitted gas does not reach the position where the charged electron beam is irradiated, so that the pressure at the position where the charged electron beam is irradiated does not easily rise. In other words, due to the above configuration, the vacuum degree of the charged electron beam irradiation position on the test piece surface can be stabilized, and since the stage can be driven with two precisions, the test piece can be charged with high precision without contaminating the surface of the test piece. The charging electron beam device 2200 of the present invention is characterized in that the spacer portion is provided with a differential exhaust structure. According to the invention, a spacer is provided between the hydrostatic bearing support portion and the charged electron beam irradiation region. Since the vacuum draining passage is provided in the partition portion to have a differential exhaust function, the gas discharged from the hydrostatic bearing support portion reaches the charged electron beam irradiation region side substantially without passing through the partition portion, thereby enabling the charged electron beam to be irradiated. The vacuum degree of the position is more stable. The charged electric wire device 23 of the present invention is characterized in that the aforementioned partition portion has a cold trap function. Generally, it is in a pressure margin of 1 〇 7 or more. The main component of the gas remaining in the vacuum and the gas released from the surface of the material is water molecules. Therefore, if the water molecules can be discharged efficiently, it is stable and stable. Therefore, if a cold section with a cold portion of about 100 C to -200 C is provided in the above interval, the gas released from the hydrostatic bearing can be trapped by the cold-cut bead, so that the gas is not easily passed through the belt: The electron beam illuminates the field side, so it is easy to stabilize the vacuum of the Baoji domain. The above-mentioned cold interceptor is effective not only for water molecules, but also for the removal of organic gas molecules such as oils which are caused by the cleansing of the air. (Revision page) 312765 23 1288424 The charging electron beam device 2400 of the present invention is characterized in that the spacer portion is provided at the vicinity of the charged electron beam irradiation position and the vicinity of the hydrostatic bearing. According to the present invention, since the spacing portion for reducing the conduction is provided at the vicinity of the charged electron beam irradiation position and the vicinity of the static pressure bearing, the true-to-valley is divided into the charged electron beam irradiation chamber and the static pressure through the small conduction. The state of the three chambers of the bearing chamber and its intermediate chamber. The pressure in each chamber constitutes a charged electron beam irradiation chamber, an intermediate chamber, and a static pressure bearing chamber in the order of low pressure. According to the above configuration, the pressure at which the released gas is generated in the hydrostatic bearing chamber rises and falls, and since the chamber is originally set to a higher pressure in the chamber, the pressure fluctuation rate can be suppressed. The pressure variation in the intermediate chamber is further suppressed by the spacer portion, and the pressure fluctuation in the neon electron beam irradiation chamber is further reduced by the interval portion of the further section, so that the pressure fluctuation can be reduced to a level which is substantially not problematic. The charged electron beam device of the present invention is characterized in that the gas supplied to the hydrostatic bearing of the aforementioned stage is characterized by dry nitrogen or a highly pure inert gas. Further, it is characterized by the surface treatment of applying a salty gas to the surface of the part which is less than the hydrostatic bearing. As described above, in the (four) moving portion of the high-pressure gas environment exposed to the static dust shaft f portion, gas molecules of the N-pressure gas are present on the surface thereof, and the gas is sucked when the sliding portion is exposed to the vacuum environment. The molecules are detached from the surface to emit gas, which deteriorates the degree of vacuum. In order to suppress the deterioration of the degree of vacuum, it is necessary to reduce the amount of molecules and exhaust the gas molecules that are sucked. In order to achieve the above purpose, the pore gas of the separator is sufficient to remove dry nitrogen or high-purity inert gas (for example, high purity (Revision Sheet) 312765 24 1288424 nitrogen gas) which supplies the high waste water of the static wire. It is effective to remove a gas component (organic matter, moisture, etc.) which is easily detached from the high-intensity gas and is not easily detached from the surface. For example, the inactive body of nitrogen has a very low sorption rate to the surface of water and organic matter, and the surface = detachment speed is extremely fast. Therefore, if a high-purity inert gas which removes moisture and an organic component as much as possible in a high-pressure gas is used, when the sliding portion is moved from the hydrostatic bearing portion to a vacuum environment, the amount of released gas is small, and the amount of released gas is also rapidly decreased. Reduce the deterioration of the vacuum. This inhibits the shift of the work station: the pressure rises. Further, it is effective to perform the surface treatment of the components of the worktable, in particular, the surface of the parts which are moved to and from the high-pressure gas atmosphere and the vacuum environment to reduce the sorption energy of the gas molecules. For surface treatment, if the base metal is a metal, TiC (Titan carbide), TiN (Titan nitride), nickel plating, non-dynamic treatment, electrolytic polishing, composite electrolytic grinding, 喑 painting, and other materials can be considered. For Sic Tao:: Consider the fine SiC coating of CVD. This makes it possible to reduce the pressure rise when moving the platform. The present invention is a wafer defect inspection device that uses the aforementioned device to inspect defects on the surface of a semiconductor wafer. The position of the workbench here determines the high-precision and continuous inspection device for the vacuum in the field of irradiation of the charged electron beam, thereby providing an inspection device with high inspection performance and no contamination of the test piece. 1. The present invention is a light-emitting device that uses the foregoing apparatus to trace the circuit pattern of a semiconductor device to a surface of a semiconductor wafer and a reticule. Because the position of the work bench determines the performance is high-precision, and the charged electronic wire (correction page) 312765 25 1288424 can be used to provide a stable light-emitting device in the field of illumination, thereby providing a high-precision precision without fear of contamination. Exposure device. The present invention is a semiconductor manufacturing method for fabricating a semiconductor using the foregoing device. In this case, since the position of the stage is determined to be high-precision, and the vacuum in the field of charged electron beam irradiation is a device for manufacturing a stable semiconductor, a fine semiconductor circuit can be formed. According to the conventional technique, a positional deviation between the image of the secondary electron beam obtained by the irradiation of the primary electron beam on the surface of the test piece and the reference image prepared in advance is formed, thereby posing a problem of reducing the accuracy of the defect inspection. φ This position deviation is particularly detrimental to the wafer in the field of illumination of the primary electron line, so that one part of the inspection pattern is lost from the detection image of the secondary electron line, and the matching field is optimal only in the detection of the image. The technology is not the right thing to do. The above examination of high-definition graphics is particularly fatal. In view of the above facts, the present invention has an object of providing a defect inspecting apparatus which is capable of preventing a decrease in the defect inspection accuracy of the position of the inspection target and the reference image. Still another object of the present invention is to provide a method for manufacturing a semiconductor device, in which the defect rate inspection of the test piece is performed by using the defect inspection device as described above, and the defective product is shipped. . In order to solve the above problems, the defect inspection device 3 of the present invention is a defect inspection device that uses a defect of the test piece, and includes: a plurality of the test pieces that are overlapped by the = knife to obtain a plurality of mutual displacements. The method of obtaining the image of the image in the field to be inspected; the means of memory used to memorize the reference image; the image of the inspected field obtained by means of the image (correction page) 312765 26 1288424 -f The memory of the hand-picked reference is composed of a defect judgment means for judging the defect of the test piece. The test piece of the inspection object may be any object for inspecting the defect, and the present invention achieves an excellent effect particularly when the semiconductor wafer is targeted. According to the present invention, the image obtaining means overlaps the upper portion of the test piece to obtain a plurality of images of the plurality of examined fields which are mutually changed, and the plurality of examined area images obtained by the defect determining means are compared with the reference image which is stored in advance. Che Yi to judge the defects of the test piece. As described above, according to the present invention, since the plurality of images in the inspection field having different positions are obtained, the use of the inspection target image having a small deviation in the position of the reference image can be used for the selection of the subsequent process, thereby suppressing the formation of the positional deviation. The defect detection accuracy is reduced. In addition, when the test piece and the image capturing means are usually used to check the positional relationship in which one part of the figure is lost from the field of the image to be inspected, it is also included in any field of the image of the detected f field which has a positional deviation from each other. The possibility of all inspection patterns is extremely high. Therefore, it is possible to prevent a defect detection error caused by one of the missing patterns as described above. And comparing the hand ^, for example, to obtain a so-called matching calculus between the respective images of the inspected field and the reference image obtained in the plural, and in the field of the plural inspected, there is a difference between the image of J and the reference image. It is judged when the test piece is indispensable. On the other hand, if the image of the entire inspection area is inferior to the reference image, it is judged that the test piece is defective to perform high-precision defect detection. In a preferred aspect of the present invention, the charged particle irradiation means 3100 for irradiating the plurality of inspected fields with a single charged particle beam to discharge the secondary charged particle beam is used, and the imaging means is obtained by detecting the plural It is the image of the inspection subject area of the plural in the order of the inspection. The charged particle beam here is preferably an electron beam. Further preferably, the charged particle irradiation means includes a particle source for discharging the primary charged particles and a deflecting means for biasing the primary charged particles, and the primary charged particles released by the particle source are deflected by the deflecting means, and the primary charged particles are sequentially irradiated The number of inspected areas. According to this aspect, the position of the input image is changed by the biased hand. Therefore, it is possible to obtain the checked image with different positions at a high speed. According to still another aspect of the present invention, a primary optical system comprising a primary charged particle beam irradiated to a test piece and a second charged particle introduced into the detector are characterized by a human optical system. Another aspect of the semiconductor manufacturing method of the present invention is a process comprising performing defect inspection on a wafer in process or finished product using the defect inspection device of each of the above aspects. Another aspect of the invention and its effects will be more apparent from the following description. As described above, only three electron microwires can be produced by an electron gun, and it is necessary to arrange a plurality of lens barrels. Further, in the electron optical system of the foregoing apparatus, a detecting electrode which is required to be partially a hemisphere is required. In addition, since the conventional technology is a method of sequentially inspecting a small inspection field, there is a need for frequent inspection: the field of inspection for electron beam irradiation, and therefore it is necessary to waste the time required for the inspection surface (the test piece = private movement) Therefore, the entire inspection is required to provide an electronic wire device capable of solving the problems of the above-mentioned conventional techniques, and the inspection is carried out. The side contains a plurality of electron-emitting lines on the surface of the test piece - (correction page) 312765 28 1288424. The sub-line irradiation device 'and the secondary electron detector which is formed by the secondary electron line of each of the one-man:: line irradiation point formed on the surface of the test piece, and moves the test piece to detect the test In the electronic wire device of the secondary electron beam in the predetermined field, the primary line irradiation device is configured such that the primary electron beam irradiation spot formed on the surface of the test piece is arranged in the moving direction of the test piece, and the direction perpendicular thereto is Μ The column, and the behavior of the first to the Nth rows of the above-mentioned primary electron beam irradiation point are sequentially shifted by a predetermined amount according to the moving direction of the test piece. ^Specifically, the last electronic line The ejector device has an electronic rush, and the electrons are rushed to the electrons to form a plurality of electron lines to form an opening plate of the plurality of openings of the sub-electron line irradiation point, wherein the opening is The electrons released by the electrons are within the range of the predetermined electronic density production. More specifically, the above-mentioned respective electron beam irradiation points ". The above-mentioned private movement direction is only the right angle direction scanning (the interval between the above columns) / (the above The number of rows is 切) (α is the amplitude of the repeated scanning of the primary electrons in the adjacent column, which can be set to the side, usually about 10% or less of the width of the image.) The electron beam irradiation width in the direction of the moving direction of the member can be wider, and the test piece is continuously inspected by the wider electronic line. The above-mentioned Μ Ν are each an integer of two and two. The secondary electron line detected by the human electronic detector can measure various defects such as the opposite side of the surface of the integrated circuit formed on the surface of the test piece, and the measurement of the accuracy of the measurement, and the above-mentioned electronic line device. , one electron beam irradiation The device may also be modified (Reflecting Page) 312765 29 1288424 to have a plurality of the above-mentioned electronic boards and the plurality of corresponding opening plates corresponding thereto, and each of the electronic grabs and the corresponding opening plates respectively have a number of turns forming the surface of the test piece. In the first electron beam irradiation of the primary electron beam, the primary electron beam of each primary electron beam irradiation system is not irradiated with another primary electron beam: - the secondary electron beam interference 'and the secondary electron detector and the above - The human electron beam irradiation system is provided with a plurality of corresponding numbers. In this way, the test piece can be moved with a wider scanning width to perform inspection, and the inspection efficiency is further improved. The present invention is for irradiating the test piece with a plurality of electronic wires, and using a plurality of tests = detection by The secondary electron electronic device of the test piece is provided to solve the difference between the electron beam on the optical axis of the human electron and the electron line outside the first axis: the problem is that the electron lines of the primary electron are about the same electron line intensity. The purpose of the electronic line device. And the plurality of electron beams of the present invention are irradiated to the test piece, and the side of the f-sub-device device for detecting the converted secondary electrons is used to provide the light-resolving light _ the near-release secondary electron detection efficiency ratio 2 The detection efficiency of the secondary electrons at the position of Ί is high, so that the electronic ray device with the measurement efficiency of the t-times of the electrons is approximately uniform. The invention further aims to provide a method of applying the above-described apparatus to evaluate the apparatus in the manufacturing process. In the above-mentioned problem, the opening image of the plurality of electron beam irradiation ports (4) released from the electron source is injected into the test piece, and the electronic data is separated from the secondary optical system and injected into the secondary light system. : The position of the image of the electron source that is projected on the surface of the detector and the image of the electron source that is made by the lens of the human optical system is more (Revision page) 312765 30 1288424 The position of the source side of the sub-line is set to a single opening The plate is placed such that the position of the opening in the direction of the optical axis is different from the difference in the intensity of the electron beam at each opening of the test piece surface. The door μ is caused by the difference between the intensity of each electron beam of the plurality of electron lines of the test piece surface, so that the electron line near the optical axis is inferior to the electron line between the electron lines of the "axis position". It is possible to increase the inspection and measurement accuracy by reducing the uniformity of the surface of the test piece, and it is possible to increase the number of electron lines by reducing the difference in the intensity of the electron beam incident on the surface of the test piece. According to the present invention, a plurality of aperture images obtained by irradiating an electron beam emitted from an electron beam source onto an apertured plate having a plurality of openings are incident on the test piece, and the secondary electrons emitted from the test piece are separated by an optical system and injected. In the secondary optics system, the primary optical system expands the electron beam device that is projected onto the detector surface, and the position of the image of the electron source generated by the lens of the primary optical system is more deviated from the position of the electronic line source. In the opening plate, the amount of deviation is set to be the smallest difference between the detection amount of the secondary electrons obtained when the non-patterned test piece is placed on the test piece surface, and the difference between the openings of the plural number is as described above. In the detector of the secondary optical system, the detection amount of the secondary electrons is minimized between the openings, so that the detection rate of the secondary electrons of the secondary optical system can be suppressed, thereby enabling higher-precision inspection. And the present invention is characterized in that the above-mentioned electronic wire device is used to perform a five-price parity on a wafer in a manufacturing process. Since the electronic wire device of the present invention is used to evaluate the manufacturing of a wafer in a private process, higher precision can be performed. High-efficiency wafer evaluation 31 (amendment page) 312765 1288424 'price operation. For the t-line that is released with - (4), the opening has two opening plates with a plurality of openings to form a plurality of electron lines, which are opened by the σ The electronic line is reduced by a department and projected on the surface of the test piece to perform scanning. Due to the distortion of the two under-optical systems, there is a possibility that the electronic lines cannot be projected at a desired position. One of the surface of the test piece has a light 舆 == a difference, so the vicinity of the optical axis of the secondary optical system has different problems from the size and shape of the electronic wire of the axis. The secondary electrons emitted by the test piece are projected on the detector. Used by the group The second 2 is also a problem of the difference, and thus constitutes a problem that the secondary electrons cannot cast the desired position of the detector group. y The present invention is to solve the above problems of the conventional electronic line device, and the object of the present invention is to provide correction. The distortion of the secondary optical system and the secondary optical system are the same as the non-point-receiving electronic wire device of the secondary optical system. The present invention provides the use of the above-mentioned electronic wire device for the manufacturing process: For the purpose of manufacturing a device for improving the yield of a semiconductor device by using various evaluations, the opening plate of the electron beam emitted by the electron gun of the present invention is used for the reduction of the primary electron beam passing through the plurality of openings. The 氺 氺 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄 丄The position of the plurality of openings. - The invention of the present invention is an electron beam that is discharged by electrons and irradiated with a plurality of openings (correction page) 312765 32 1288424; = a first plurality of aperture plates, which will pass through the opening of the plurality of openings An optical system is projected on the test piece, and the test piece is placed on the surface of the test piece, and the m-du: a secondary optical system is expanded and detected by a detector formed by a plurality of elements. The apparatus is formed in the opening position of the plurality of aperture plates, and is provided in the front surface of the detector, and the distortion of the secondary optical system is corrected. ^发发: When the electron beam emitted by the electron gun is irradiated to the opening with a plurality of openings, the image of the secondary electron beam passing through the opening of the plurality of pixels = an optical image is scanned on the test piece, and The image of the one electron beam emitted from the front substrate is projected onto the detector by the secondary optical system, and the shape of the plurality of openings is set in a state in which the field of view of the secondary optical system is not corrected. Electronic grab The outgoing electron beam is irradiated onto the opening plate having a plurality of openings, and the reduced image of the secondary electron beam passing through the opening is projected onto the test piece by the secondary optical system including the Μ separator, and the test piece is released. The image of the secondary electron beam is projected onto the detector by the photographic optical system, and the image data is obtained by multichannel, and the image of the secondary electron beam is directed to the main surface of the Εχβ separator. For the image to be in the form of 4 pieces! I' and the image of one of the openings of the plurality of openings is imaged on the deflecting main surface of the aforementioned splitter. The monthly electronic device can be applied to the defect inspection. One of a group such as a device, a line width measuring device, a matching accuracy measuring device, a potential contrast measuring device, a defect evaluation device, and a stroboscopic (SEM) device. 33 (Amendment page) 312765 1288424 'The present invention The electronic wire device may irradiate the test piece with a plurality of electron beams of the electron gun, and the secondary electron beam discharged from the test piece is detected by the plurality of detectors corresponding to the plurality of electron guns. The invention of the electronic wire device can be used for evaluating the wafer in the manufacturing process. The conventional technology has no specific method for detecting secondary electrons by using multiple detectors, and whether the test piece can be inspected with high decomposition energy. The evaluation is also unclear. Once again, the electron beam of the optical system is irradiated obliquely to the surface of the test piece, and the electrostatic object lens and the test piece are not axially symmetric, so there is a problem that the electron beam cannot be focused into a thin line. Further, although the technique of separating the secondary electrons of the test piece by the helium separator to introduce the detection benefit is known, the bias vector and the deflection direction of the electron line biased by the electric field of the EXB separator are used for the low-energy electron line and The high-energy electron lines are different, so there is a problem of color difference.

In the case of the ExB separator, it is difficult to check the vicinity of the test piece to ensure that there is a problem of setting the space of the deflector. "One of the problems to be solved by the present invention is to provide a βχβ separator for an electronic wire clothing of a photographic projection type optical system, and to examine a test piece by a plurality of electronic wires to achieve high-performance test and evaluation of productivity, and the like. Another object of the present invention is to provide an electron beam device capable of focusing a β-electron wire into a thin wire. Another object to be solved by the present invention is to provide a correction for the use of a helium separator. The resulting color-receiving sub-line device. Another problem to be solved by the invention is to provide the light of the electronic wire device and to perform multiple samples to enable the test piece to be carried out with high productivity and high reliability ( Amendment page) 312765 34 1288424 - Apparatus for inspection and evaluation. Another object to be solved by the present invention is to provide both the ExB separator and the deflector in the most appropriate position by using both the splitter and the deflector. Another object to be solved by the present invention is to provide a device manufacturing method for evaluating a test piece in a manufacturing process using the above-described electronic wire device. That is, one of the methods of the present invention is a single electron gun having a discharge electron beam; an aperture plate having a plurality of holes" having a plurality of lenses and at least two Εχβ separators disposed apart from each other to The electron beam emitted from the electron gun is irradiated onto the primary optical system on the surface of the test piece to be inspected; and the secondary electrons emitted from the test piece are separated from the primary optical system by one of the ExB separators and injected into the secondary electron detection. The device is configured to detect the secondary optical system, and the electron beam that is emitted by the electrons is irradiated onto the opening plate to form an image of a plurality of holes, so that the position of the image of the hole coincides with each position of the ExB separator, and The direction of the electron lines to which the electric field of each of the ExB separators is biased is opposite to each other as viewed from the surface of the test piece. Due to the above composition, the test piece can be inspected and evaluated with high productivity and high reliability with a plurality of electronic wires. Further, since the color difference formed by the Μ separator can be corrected, the electron beam can be further focused into a thin line to ensure high inspection accuracy. Another aspect of the electronic wire device of the present invention is that the partial vector of the electron line deflected by the electric current of the Εχβ separator is viewed as a mutual μ from the bias surface of the magnetic field and the Wei is a phase material. In the above-described electronic wire device, the secondary path in which the Εχβ separator is biased may be a plurality of rows arranged in two rows without mutual interference. Therefore, the inspection and evaluation of the test piece can be carried out with high productivity (correction page) 312765 35 1288424 productivity and high reliability. Another application of the present application is to provide: a single electron that emits an electron beam; an opening plate having a plurality of holes; and a plurality of lenses and an ExB divider to illuminate the electron beam of the electron to be inspected a first optical system on the surface of the test piece; and a second optical system in which the secondary electrons are separated from the first optical system by the pre-confining separator for discharging the test piece and injected into the secondary electron detecting device to detect the second optical system. The electron rushing electron beam is irradiated onto the opening 1 plate to form an image of a plurality of holes, so that the position of the image of the plurality of holes is consistent with the position of the ΕχΒ separator, and the scanning voltage is weighted before:

The electric field of the ExB separator causes the aforementioned electron beam to deflect. According to the above configuration, the ExB separator and the deflector are used together, and the two can be positioned. One of the inventions described in a month and the electronic wire device of another invention can be applied to any of the defect inspection device, the wire width measurement device, the defect evaluation device, the sensation test device, and the potential contrast measurement device. Still another invention of the present invention is to use the aforementioned electronic wire device to evaluate the wafer in the manufacturing process to carry out the manufacture of the device. SUMMARY OF THE INVENTION An object of the present invention is to provide an electronic wire device which is electro-optically and which performs focusing of an electro-optical system in a short time, and a semiconductor body manufacturing method using the same. In order to achieve the object, the present invention irradiates a plurality of secondary electron beams to a test piece by a primary optical system, and discharges the secondary electric wires of the test piece through the objective lens and then puts it into secondary optics with an ExB separator. After the input, at least one segment of the lens is used to enlarge the interval between the plurality of secondary electron lines, and then the electron detector is detected by a plurality of detectors to provide at least three different excitations for the objective lens. The voltage is measured (repaired on JE page) 312765 36 1288424 疋 will be parallel to the pattern edge of the first direction ed) scanned on the second side 7 and the intensity corresponding to the secondary electron line is expressed above the electrical signal To the second, the two data are characterized by an electronic line device. Thereby, the focus of the electro-optical system can be performed in a short time. Further, the electron beam device is disposed opposite to the plurality of test pieces, and the optical system of each of the mirrors 2 is configured such that a plurality of primary electron beams are irradiated to different positions of the test piece and the other lens barrels. This can increase productivity.

Preferably, the electronic line device is configured such that the pattern on the wafer is charged to determine the excitation condition of the objective lens. The invention further proposes that m light (four) illuminates a plurality of f sub-lines to the test piece. . The secondary electron beam emitted from the four pieces passes through the objective lens and enters the secondary optical system with the Εχβ separator. After the shot, at least the segmental lens is used to enlarge the interval between the secondary electron lines. The detector will measure the electronic line device. The objective lens of the late electronic device has a first electrode to which a voltage close to the ground potential is applied, and a second electrode that is larger than the first voltage, and is applied to the first electrode by a change. 1 (4): The composition of the focal length of the starting mirror, and the means for energizing the lens of the object to be able to change the focal length of the objective lens greatly and containing the electric energy of the 2 electrode' The distance is changed by a short == means to change the voltage applied to the first electrode. SUMMARY OF THE INVENTION The present invention provides a method of fabricating a semiconductor device characterized by the above-described electron beam device which is characterized by a wafer that has been manufactured for a long time or has been finished. In fact, it is not clear whether it is possible to use a multi-detector to detect secondary electrons with a high score (Revision page) 312765 37 1288424 - The electronic line device that performs inspection and evaluation on the test piece is not necessarily practical. Further, the electronic wire device has a mode (hereinafter referred to as a standard mode) which can be used for detecting a large defect with high productivity but low resolution, and a mode having low productivity but high resolution and capable of detecting a very small defect (hereinafter referred to as high). Two different modes of resolution mode). However, practical devices having the above functions have not yet been developed. , ^ When using one device for two modes, it is necessary to change the scanning width of the complex electron beam and change the expansion ratio of the electrostatic lens of the secondary optical system. However, if the scanning width is adjusted to be smaller than the standard mode, The gap between the multiple electron lines, the gap of the raw scan, and the size of the electron line of the secondary optical system and the size of the detected stolen element are not caused. The present invention has an object to solve the above problems. In order to solve the above problems, one of the inventions of the present application is to provide an opening plate having a plurality of holes for discharging an electron beam from a single electron gun to form a plurality of electron lines and to form the plurality of electron lines in at least two stages. The electrostatic lens f is narrowed to perform scanning on the test piece to be inspected, and the secondary electrons emitted from the four pieces are separated by an electrostatic pairing lens and separated from the sub-optical system by a helium separator, and then A secondary optical system that is enlarged by a plurality of electrostatic lenses to be incident on a plurality of detecting devices, and at least a mode for evaluating a test piece in a mode with a low productivity but a low resolution and a low productivity but a high resolution. Two or more types of halogen elements are used for the test piece, and the above-mentioned composition "can be used for the inspection and evaluation of the high productivity and the test piece of the test piece. And the standard mode and the high resolution mode can be implemented by one device. (Revision page) 312765 38 1288424 Another aspect of the electronic wire device of the present invention has a correlation between the reduction ratio of the complex electron beam of the primary optical system and the enlargement ratio of the electrostatic lens of the secondary optical system. Another aspect of the electron beam apparatus of the present invention is that the cross-over image of the primary optical system is formed on the principal surface of the electrostatic objective lens when the above-described productivity is high and the resolution is low. Another aspect of the electron beam apparatus of the present invention is that the expansion ratio of the secondary optical system is adjusted by an electrostatic lens provided closer to the detector than the aperture provided in the secondary optical system. According to the present invention, the wafer in the manufacturing process is evaluated by the above-described electronic wire device to manufacture the device. The conventional scanning electron microscope scans the surface of the test piece with a small electronic wire, so that the evaluation of the large-area test piece has a problem that the productivity is too low. Further, with the aforementioned known charge detecting function, it is necessary to perform high-time decomposition for various currents to perform detection, and it is not always possible to correctly detect the state of charging. The present invention has been made in view of the above problems, and an object of the invention is to provide an electronic wire device which improves productivity and evaluates a test piece with higher reliability. Another object to be solved by the present invention is to provide an electronic wire device in which a plurality of electron beams are simultaneously irradiated onto a test piece to improve productivity, and a charge detecting function is improved to improve the reliability of evaluation. Still another object to be solved by the present invention is to provide a device manufacturing method for evaluating a test piece during or after a manufacturing process with high yield using the above-described electronic wire device. An invention of the present application is characterized in that: an optical system for generating a primary electron beam and focusing it to scan a test piece; and an electron beam 39 (correction page) of the test piece 312765 1288424 a secondary photon system containing at least one lens and a detector for detecting the secondary electrons, and accelerating the secondary electrons emitted from the electron beam irradiation portion, and the 帛ΕχΒ separator separates the secondary optical system An electron beam device that is incident on the secondary optical system and then magnifies the image of the two-human electrons from the lens and then detected by the detector is described as an optical line that generates a plurality of primary electron beams simultaneously irradiated to the The detector is provided with a deceleration voltage application device that applies a derating voltage to the test piece and a charge investigation function for investigating the state of charge of the test piece. The electronic wire device of the above invention further has the most suitable deceleration voltage determined by the charging investigation function based on the information on the charging state. The function of applying the element or the function of changing the amount of irradiation of the electron beam may be used. The electronic line device of another embodiment of the present application is an optical system and charging investigation having a plurality of electron beams irradiated to the test piece. The function of the charge investigation function is to detect a pattern distortion or a pattern blur of a specific portion of the test piece when detecting a formed image by a detector for detecting a secondary electron generated by the primary electron beam on the test piece. As a result, when the pattern is distorted or the pattern blur is large, it is evaluated as a configuration having a large charge. For the electronic line device of each of the above inventions, the charge investigation function is such that a variable deceleration voltage value can be applied to the test piece, and at least two deceleration voltages are applied. The state forms a denim near the realm of the pattern density of the test piece, and the above-described image is displayed for the operator to evaluate the pattern distortion or the image blur. (Revision page) 312765 40 1288424, The invention of claim θ is invented to provide a defect in the use of the above-mentioned electronic wire device to: The device manufacturing method is characterized by the feature of the device. The use of the energy filter of the conventional example shown in Fig. 54 for the use of the sub-line to obtain the image of the wafer is evaluated by the inspection device. The field around the optical axis does not have a substantial difference, and one of the reasons is that the conventional ΕχΒ energy filter has a complicated structure, and the symmetry 2 is very good. That is, due to poor symmetry, When calculating the difference, only the electric field analysis of the second element and the magnetic field analysis of the three elements are complicated, so the calculation is complicated. Therefore, it is quite time-consuming to design the most appropriate compensation. Another reason is the conventional electric energy device. The field in which the magnetic field is orthogonal to the optical axis and whose intensity distribution is substantially the same is narrow. The present invention has the problems of the above-mentioned conventional examples, and the third object thereof is to provide a simple structure and easy calculation of the difference, and the magnetic field and the electric field strength are the same. The larger separator in the field around the optical axis. A second object of the present invention is to provide a semiconductor device manufacturing method using the electron beam device for achieving the first object of the separator and performing the evaluation of the semiconductor wafer by the electron beam. In order to achieve the above first object, the Ε xB separator for generating an electric field and a magnetic field orthogonal to the optical axis and separating at least two electron lines having different directions is a plate-shaped electrode in which one of the electric fields is parallel. Further, it is an electrostatic bias having an electrode whose electrode spacing is set to be shorter than the length of the electrode orthogonal to the electric field, and a toroidal type or saddle (saddle) which biases the electron line in the opposite direction of the electrostatic deflection state. ) type electromagnetic offset (correction page) 312765 41 1288424 - directional device. Further, the electrostatic deflector of the above-mentioned separator constitutes an electrode including at least six poles for generating an electric field to generate an electric field which is possible to rotate. Further, the ring type or saddle type electromagnetic deflector of the above ExB separator preferably has two sets of electromagnetic coils that generate magnetic fields in two directions of electric field and magnetic field, and can adjust the current ratio of the coils of the two groups by adjusting The direction in which the electromagnetic deflector is formed is opposite to the direction in which the electrostatic deflector is oriented. Further, in the inside of the saddle type or the ring type electromagnetic deflector of the above ExB separator, the electrostatic deflection H' is set so that the electromagnetic deflector can be formed into a two-divided state, and is installed outside the electrostatic deflector to separate the mExB. Easy to manufacture. The present invention further relates to the inspection of a semiconductor wafer by a plurality of electron beams and a plurality of detectors for detecting an image of a secondary electron beam of the wafer to evaluate the processing state of the semiconductor wafer. The xB separator is used to separate the primary electrons from the primary and secondary electrons. SUMMARY OF THE INVENTION One object to be solved by the present invention is to provide a charged electronic wire device which omits a differential exhaust mechanism of a lamp stage to make the structure simple and compact. Another object to be solved by the present invention is to provide a charged electron for a differential venting mechanism for exhausting a casing that is housed in a casing of χγ王台, and that is provided with an exhausting electric field on the surface of the test piece. Line device. The invention is also to solve the problem that the above-mentioned charged electronic wire device performs inspection on the surface of the test piece, or provides a light-applying device for drawing the surface of the test piece, and the problem is to provide the use of the above-mentioned charged electronic device. ^ (Revision JL page) 312765 42 1288424 - Apparatus for manufacturing a semiconductor device manufacturing method of a semiconductor device. In the apparatus for illuminating a charged electron beam on a test piece placed on a χγ table, the XY stage is supported in the casing and is non-contacted by the hydrostatic bearing to the casing, and the XY stage is supported. The casing is evacuated, and a differential exhaust mechanism for exhausting the field of the charged electron beam on the surface of the test piece is disposed around the portion of the test piece surface of the charged electron beam device that is irradiated with the charged electron beam. According to the charged electric wire device of the invention, the high-pressure gas for the hydrostatic bearing leaking into the vacuum chamber is first exhausted by a vacuum exhaust pipe connected to the vacuum chamber. Then, since a differential exhaust mechanism for exhausting the charged electron beam is provided around the portion where the charged electron beam is irradiated, the pressure in the field of the charged electron beam is greatly reduced compared with the pressure in the vacuum chamber, and there is no problem. The test piece is treated with a charged electronic wire and is carried out in a stable vacuum. That is, a workbench having the same structure as a hydrostatic bearing type generally used in the atmosphere (a table without a differential exhaust mechanism supporting a hydrostatic bearing) can be stabilized on the workbench. The test piece is subjected to the application of charged electronic wires. In the charged electron beam device of the present invention, the gas supplied to the hydrostatic bearing of the XY table is dry nitrogen or a high-purity inert gas, and the dry nitrogen or high-purity inert gas is contained in the casing row of the work platform. After the gas is pressurized, it is supplied to the aforementioned hydrostatic bearing. According to the present invention, the remaining gas component in the vacuum casing is a high-purity inert gas, so that the surface of the test piece and the surface of the structure in the vacuum chamber formed by the casing are not contaminated by moisture and oil, and Inactive 43 (Revision page) 312765 1288424 When the gas f knife is sucked on the surface of the test piece, if it is exposed to the high vacuum part of the differential exhaust mechanism or the charged electron beam irradiation, it will quickly pass the surface of the test piece, This is to prevent the charging of the charged electron beam in the field of vacuum from being minimized, so that the treatment of the test piece by the charged electron beam is stabilized. / "In the present invention, the wafer defect inspection device for inspecting the surface of the semiconductor wafer using the above-mentioned charged electron beam device is provided. Thus, it is possible to provide a high precision and a charged electron beam irradiation field with a low degree of work and position determination performance. The vacuum degree is a stable inspection device. The present invention uses the above-mentioned charged electron wire package to mount the circuit pattern on the surface of the semiconductor or the circuit pattern of the semiconductor device by the marking line, thereby being capable of providing the position of the stage at a low cost. The high-precision 'and the vacuum degree in the field of charged electron beam irradiation is a stable light-emitting device. The present invention is a method for manufacturing a semi-fin body for manufacturing a semiconductor using the above-described charged electron beam device', since the positioning performance using the platform is high precision, and ▼The vacuum in the field of electric electron beam irradiation manufactures a semiconductor for a stable device, so that a fine semiconductor circuit can be formed. When a reduction lens system is formed with a % double lens, a two-stage lens is required, and the size ratio of each lens must be made. The ratio is equal to the reduction ratio. For example, it forms 1/1々0, and when it is small, it cannot be due to the lens on the smaller side. The lens is formed to have a hole diameter of 5 mm 0 and a lens gap of 5 mm. When the lens gap is 5 mm, the aperture of the lens on the larger side is 5 Å, and the lens gap is 50 mm. The problem that the symmetric double lens condition is disordered may occur if the lens of a relatively large size cannot be formed, and the magnification is changed as in the actual skirting. The present invention has the above problems, and the magnification of the second system can be adjusted, and The single lens can be used to correct the magnification of the color difference ^= (correction page) 312765 1288424 optical system. The present invention further provides a tube rod nightmare system, a, and a device for early detection of the beacon device The method of performing the wafer evaluation by the method of low yield is that the lens of the capacitor is applied to the plurality of electronic wires by using the electron beam 1 for the image of the objective lens on the test piece. Providing an overlapping position of the electron beam formed by the lens of the preceding stage of the objective lens as an electronic line device set to a near-inch position of the lens system on the lens side. Specifically, the overlapping position is Set in right The main surface of the object lens is close to the above lens. Since the overlapping position is set as above, the image formed on the test piece is caused by the difference in the electron line, and in particular, the color difference can be low. a plurality of electron lines formed by a plurality of electrons rushing through a plurality of openings, a plurality of (four) sub-lines released by a plurality of electrons, or a plurality of electrons emitted by an emitter formed by a plurality of electrons The present invention further provides a device manufacturing method using the electronic wire device as described above to evaluate the wafer in the manufacturing process. The present invention uses a plurality of electronic wires to scan a plurality of electron lines in the direction of the \ yuan. (X direction) and perpendicular to the surface of the test piece by the ΕχΒ filter (Wi en fi 1 ter ), the secondary electrons of the test piece are separated from the one or two pen lines by the ExB filter from the axis of the primary electron line The direction is taken out, and then the lens system is used to image or collect light in the detection system. Further, the worktable is moved in the vertical direction (y direction) of the scanning direction (X direction) of the primary electron beam to obtain the image of the continuous reading 0 45 (correction page) 312765 1288424 - the human electron wire is passed through the separator The electric field and the magnetic field force are set to the conditions of equal strength and opposite directions (the conditions are deducted), and the direction of the primary electron beam is straight forward. The secondary electron beam has the same direction as the primary electron beam but the direction of the electric field and the magnetic field used for the one-person electron beam, and therefore the square wire is bent from the axial direction of the primary electron beam. As a result, the primary electron line is separated from the secondary electron line. When the electron beam passes through the Εχβ filter, the difference in bending is larger than that in the case of straight-through, so that ^^1 corresponding to each electron line requiring high precision is obtained by the secondary electron diameter of the corresponding primary electron line. The image system must be injected into the corresponding detector. This eliminates the mixing of signals. The detector is a flashing H (seintillator H photomultiplier tube (phQt〇multipner). A PIN diode (semiconductor detector) or the like can also be used. According to the invention, 16 electrons are used, and each electron diameter is The electronic line current is 2GnA, which is commercially available. It is about 3 times the current value. The gun (electronic green) The electronic line source of the present invention uses a hot electron source. The electron emission (Laitter) material uses LaB6. It is possible to use a high melting point (other materials that are low in the tomb gas at high temperatures), and two methods for obtaining a plurality of electronic wires, which are derived from a strip-element ("bulge") The electron beam is passed through a thin plate (opening plate) having a plurality of holes to obtain a plurality of electron wires. Another method is a method in which a plurality of protrusions are formed by a single emitter to directly extract a plurality of electron lines. Both of the above methods utilize the property of the electron beam which is easily discharged from the front end of the bump. Other sources of electron sources such as a hot electric field discharge type electron beam can be used. (Revision page) 312765 46 1288424 The source of the hot electron source is Heating the electronic discharge material The method of emitting electrons, and the electric field discharging the electron beam source is a method in which a high electric field is applied to the electron emitting material to emit electrons, and then the electron beam emitting portion is heated to stabilize the electron emission. The vacuum exhaust port is composed of a vacuum pump, a vacuum valve, a vacuum gauge, a vacuum pipe, and the like, and evacuates the electron optical system, the detecting portion, the test piece, and the load lock in a predetermined order. Each part uses a vacuum valve to achieve the necessary vacuum degree, and often monitors the truth of each part. When an abnormality occurs, an interlocking valve (l〇ck) function is used to perform an emergency control on the isolation valve to ensure the degree of vacuum. For example, the main exhaust gas uses a turbo molecular pump, and the rough lead uses a Roots (R〇〇ts) type dry pump. The pressure at the inspection site (electron line irradiation unit) is 1 (Γ3 to 1〇_5pa). In practice, it is better to use one of the lower ones from 1 to 4 to i〇-6pa. Control System The control system of the present invention is mainly composed of a main controller, a controller, and a bench controller. The main controller is provided with a man-machine interface. (man_madiine _ =terface), The author introduces the operation (instructions of various instructions/commands, selections: ipe), the instructions for the start of inspection, automatic and manual inspection of the mold cutters, and the input of all required commands when the mode is checked. Its::: the communication of the mother computer of the factory, the control of the vacuum exhaust system, the device of the wafer, etc.: the control of the position phase t, the communication with other controllers and the control of the station, and the transmission of the data. It is also carried out by the main controller. In order to obtain the image signal of the optical microscope, the change of the stage (correction page) 312765 47 1288424 is sent back to the electro-optical system to correct the deterioration of the image. And detecting the displacement of the z-direction (the axial direction of the secondary optical system) of the observation position of the test piece and returning it to the electro-optical system, and automatically correcting the focus of the automatic focus correction function. The transfer of feedback signals to the electro-optical system, and the transmission and reception of signals from the workstations are performed by the controller and the bench controller. The control mainly serves as the control of the electron beam optical system (the control of the high-precision power supply for the electronic grab, lens, aligner, Wien filter, etc.). Specifically, in order to change the magnification of the illumination field, a certain electron current can be irradiated, and each lens system corresponding to each operation mode, such as automatic voltage setting for each lens system and calibration device corresponding to each magnification, is performed. Control of the automatic voltage setting of the calibrator (linkage control). The control of the turret is mainly for the movement control of the relevant work station so that it can move in the X direction and the Y direction of the fine (± 〇. 5#m degree error). In addition, the power station controls the rotation direction (0 control) within 3 seconds with an error accuracy of the soil. Inspection 庠 Figure 63 shows the inspection sequence of the present invention. In general, 10 lines of defect inspection by electronic wire are expensive, because the productivity is lower than other production devices, so it is currently used in the most inspected process (such as etching, film formation, or CMp (chemical mechanical polishing) planarization. After processing, etc.). The wafer to be inspected is calibrated on an ultra-precision X-Y table by an air transport system and a vacuum transport system, and then fixed by a chuck mechanism or the like, and then a defect inspection is performed according to the procedure of Fig. 63. First, the position of each die should be determined by an optical microscope, and the height of each position should be detected and recorded (Revised) 312765 1288424. The optical microscope acquires an optical microscope image of another portion to be inspected for defects, and is used for comparison with an electron beam image. Secondly, the data of the selected type of wafer (after that process, the size of the wafer is 2〇cm or 3〇cm, etc.) is input to the device, followed by the designation of the inspection site, and the electro-optical system. After setting or checking the setting of the inspection conditions, the defect inspection is usually performed in real time with the acquisition of the image. The comparison of the cells with each other, the comparison of the molds, etc. is performed by a high-speed data processing system having an arithmetic algorithm, and the , , , , and It is output to CRT, etc. and is stored in memory. Defects can be caused by particle (/artlcle) defects, shape abnormalities (graphic defects), electrical (wire breaks and wire breaks, etc.), and can automatically distinguish the above defects and classification defects in real time. A kiner defect (a major defect that the wafer cannot be used, etc.). The detection of electrical defects can be achieved by detecting double ratios. For example, when electron irradiation (at a degree of 500 ev) is performed on a poorly-conducted portion, the positive charge is usually 'the contrast is reduced and can be distinguished from the positive (four) portion. Here, the electronic lining means means a low-energy electron beam generating means (thermoelectric=sub-electron generating means) which is formed by a contrast potential which is formed by a potential difference other than the electron beam irradiation means for inspection, and the inspection target area is irradiated. Use...,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Etc. (due to the smoothness of the component flow (correction page) 312765 49 1288424 • The ease of circulation is different) The contrast can be detected by different detectable defects. It can also be used for the measurement of the line width measuring device and the relative accuracy. When it is returned to the electronic line device of the month of operation, the electrode is attracted to the high voltage field due to the proximity interaction (the particles near the surface are charged), so the electrode used in the formation of the electron line and the bias will accumulate organic. Substance. The insulator that slowly accumulates due to the charging of the surface will adversely affect the formation of the electron beam and the biasing mechanism. The accumulated insulator is removed. The period of the insulator is removed by using an electrode disposed near the region of the stacked insulator to form hydrogen, oxygen, or fluorine, and the like, HF, 〇2, HA, CmFm, etc. in a vacuum. Piasma, and the electric potential in the holding space is located at a potential that causes a nozzle to be sputtered on the electrode surface = kv, for example, by oxidizing, chlorinating, vaporizing, removing only 5 kV) . EMBODIMENT OF THE INVENTION: FIG. 2 and FIG. 2 illustrate a first embodiment of the present invention for performing a check on a patterned substrate, that is, a wafer is implemented by a device 2 and the semiconductor inspection is covered with a facade and Plane representation. Main configuration The semiconductor inspection device of the first embodiment has a card holder H (cassette) for cutting the wafer, and a plurality of clams. The main casing 3 of the studio is formed. Between the small ring two: the chamber casing 30, two loading chambers are formed, and the main cassette holder 1 is passed through the crucible 40, and the wafer is loaded from the main housing. The load on the 5th floor of the workbench (correction page) 312765 50 1288424 carrier 60; and the electro-optical device 7〇 installed in the vacuum casing, the above device is based on the relationship shown in Fig. 1 and Fig. 2 Location configuration. Further, the semiconductor inspection apparatus 1 further includes a precharge unit 81 disposed in the main casing 3 of the vacuum, and a potential application mechanism 83 for applying a potential to the wafer (Fig. 8); electronic line calibration Mechanism 85 (shown in FIG. 1); an optical microscope 871 constituting an adjustment control device 87 for performing wafer positioning on a workbench. The card holder 10 is a cassette C for accommodating a plurality of (for example, 25) wafers in a vertical direction (for example, a ci〇se cassette of SMIF or FOUP manufactured by Assist). Keep a plurality of (the two forms are two). The cassette holder can be arbitrarily selected from a structure in which the robot automatically transports the cassette to the cassette holder 1 and a cassette which is adapted to be loaded by a human hand. The cassette of the present embodiment is in the form of an automatic loading cassette, for example, a lifting table u and a lifting mechanism 12 for moving the lifting table 11 up and down, and the cassette c can be locked as shown in FIG. The state is automatically placed on the lifting platform, and after being placed, it is automatically rotated in the state shown in the second drawing line and faces the first conveying portion = the rotation axis in the small environment room. Further, the lifting table U is lowered to the lock line in Fig. 1 to indicate a complaint. As described above, the known configuration can be used for the cassette holder for automatic filling or the cassette holder for manual filling, and the detailed description of the pot is omitted here. 8. In another embodiment shown in Fig. 3, a plurality of 〇〇 必 必 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The substrate carrying case 24 is an automatic opening and closing device that is connected to the corner of the box body and the substrate carrying-out door automatic opening and closing device, so that the opening σ portion of the side surface of the case body 051 is ^ (corrected page) 312765 51 1288424 5p2, on the opposite side of the opening, is a cover body 5 〇3 for loading and unloading filter and fan motor rain cover opening and closing portion, a grooved bag for holding the substrate W (not shown), a ULPA filter 505, a chemical filter 5 0 6 ' and fan motor 5 〇7. The substrate w of the present embodiment is loaded and carried out by the robot-type second transport unit 612 in the loaded state 60. The substrate housed in the card Ec, that is, the wafer is a wafer to be inspected, and the inspection is performed after the process of processing the wafer in the semiconductor manufacturing process or in the process. Specifically, a substrate (i.e., wafer) that receives a film formation process, CMp, ion implantation, or the like, and a wafer on which a wiring pattern is formed, or a wafer in which a wiring pattern is not formed, are housed in a cassette. Since the wafers accommodated in the cassette c are arranged in parallel and arranged in parallel with each other, the arbitrary wafer and the ith transport unit which will be described later can be held apart, and the arm of the first transport unit is Can move up and down. " The small environmental chamber 20 in Fig. 1 to Fig. 3 is provided with a casing 22 forming a small environmental space 21 controlled by the environment; and circulating a gas such as clean air in the small environmental space 21 to perform environmental control shooting A discharge device 24 that supplies a portion of the air to the small environment space 21 and a pre-regulator that is disposed in the small environment space 21 to perform positioning of the coarse position on the substrate (ie, the wafer) to be inspected. ― The casing 22 includes a top wall 221, a bottom wall 222, and a structure surrounding the surrounding wall 223' to block the small environmental space 21 from the outside. For the environment of the small environment: the gas circulation device 23 is as shown in Fig. 3; = set =, the top wall 221 in the view space 21 makes the gas (in this embodiment, the rolling) β, and passes through one or The above gas outlet (not shown) will clear (correction page) 312765 52 1288424 - the gas supply portion 231 which flows out in a laminar flow straight down, and the bottom wall 222 which is disposed in the small environmental space will flow downward. The air recovery duct (duct) and the connection recovery pipe 232 and the gas supply unit 231 return the recovered air to the duct 233 of the gas supply unit 231. According to the gas supply unit 231 of the present embodiment, about 20% of the supply air is taken in from the outside of the casing 22 to be cleaned, and the ratio of the externally taken in gas can be arbitrarily selected. The gas supply unit 231 is provided with a known HEPA or ULPA filter for generating clean air. The flow in the direction of the laminar flow of the clean air, that is, the downward flow (down f low) is mainly the flow path provided in the small environment space 21, and the supply of the transport surface of the first transport unit, which will be described later, is prevented. Dust generated by the transport unit may be attached to the wafer. Therefore, the discharge port of the downward flow is not necessarily provided at a position close to the pre-wall as shown in the drawing, and may be provided on the conveyance surface side of the conveyance unit. It is not necessary to have a small flow path and all the space in the type of environmental space. According to the situation, ion (ion) wind can be used to clean the air to ensure the cleanliness. It is also possible to provide a sensor for observing the cleanness in a small environmental space, and to shut down the device when the cleanliness is deteriorated. An inlet 225 is formed in a portion of the peripheral wall 223 of the casing 22 adjacent to the cassette holder 10. The entrance and exit 225 is provided with a shutter device of a known configuration to close the door 225 from the small environmental chamber side.至4. 4m/sec可以。 The flow rate of the flow of the lower layer of the laminar flow. Further, the gas supply unit is not necessarily provided in a small environmental space, and may be provided on the outer side. The discharge device 24 includes a suction pipe 241 provided at a lower side of the wafer conveyance surface of the conveyance unit, and a suction pipe 241 disposed at a lower portion of the conveyance portion, 53 (correction page) 312765 1288424, a fan 242, and a suction suction provided outside the casing 22. Tube 241 is connected to conduit 243 of blower 242. The discharge device 24 sucks the gas containing the dust generated by the conveyance portion downward from the periphery of the flow path conveying portion by the suction pipe 241, and the diameter of the pipe 243, 244 and the blower 242 is discharged outside the casing 22. Further, it may be discharged to an exhaust pipe (not shown) provided in the vicinity of the casing 22. The adjuster 25 disposed in the small environmental space 21 is formed in the flat direction of the wafer by optical or mechanical detection (〇rientati〇n

Pi at) (flat portion formed on the outer circumference of the circular wafer) or a V-notch formed on one or more outer circumferences of the wafer to rotate the circumference of the wafer axis 0!-0 The position is pre-positioned with an accuracy of approximately ±1 degree. The pre-adjuster constitutes a part of the mechanism for inspecting the object of the object of the invention described in the patent application to serve as a rough positioning of the object to be inspected. The above-described pre-adjustment state itself can be constructed in a known manner, and its construction and operation description are omitted here. Although not shown in the figure, a recovery pipe for the discharge device may be provided in the lower portion of the pre-regulator to discharge the dust-containing air discharged from the pre-conditioner to the outside. The main casing 3A forming the working chamber 31 in FIGS. 1 and 2 is provided with a casing body 32 which is a vibration blocking device provided on a frame 36, that is, vibration-proof. Supported by the housing support device 33 on the device 37. The body support device 33 has a frame structure 331 that is assembled into a rectangular shape. The housing body 32 is fixedly disposed on the frame structure 331 and forms a working chamber 31 with the bottom wall 321 , the top wall 322 , the bottom wall 321 , and the peripheral wall 323 surrounding the top wall 322 of the frame structure. isolation. In the present embodiment (correction page) 312765 54 1288424, the bottom i 321 is formed of a steel plate having a relatively thick flesh thickness so as not to be deformed by the weight of the installation table I. The shell body and the housing supporting device of the shell-shaped object are formed to form a rigid structure, and the vibration-proof device 37 P is used to transmit the vibration of the base portion of the frame 36 to convey the rigid structure. An inlet 325 for wafer entry and exit is formed in the peripheral wall 323 of the casing body 32 adjacent to a peripheral wall of a loader housing to be described later. The anti-vibration device can use an active (e.g., ive) or passive method including an air spring, a magnetic bearing, or the like. The loading is a well-known configuration and its construction and function description are omitted here. The working chamber 31 is maintained in a vacuum environment by a known vacuum device (not shown). The lower portion of the frame frame 36 is provided with a control display 2 for controlling the overall operation of the device. In the first, second, and fourth figures, the loading case 4 () includes a case body 43 that forms the first loading chamber 41 and the second loading chamber 42. The casing body (2) has a bottom wall 431, a top wall 432, a peripheral wall surrounding the periphery, and a partition wall 434 separating the i-th loading chamber 41 and the second loading chamber 42, and isolating the two loading chambers from the outside. The partition wall 434 is formed between the two load chambers to perform the opening of the wafer, that is, the inlet and outlet 435. Further, inlets 436 and 437 are formed in a portion of the peripheral wall 433 adjacent to the small annular chamber and the main casing. The housing body 43 of the loading case 40 is mounted on and supported by the frame structure 331 of the housing supporting device 33. Therefore, the vibration of the base is not transmitted to the load chamber 4G. The population of the loading room 4G (4) and the population of the small 22 housing 22 are integrated and have a choice to prevent the small production space 21 and the first! A shutter device 27 that is connected to the loading chamber 41. The shutter (correction page) 312765 55 1288424 27 includes a sealing member 27 that is fixed in contact with the periphery of the inlet and outlet ports 226 and 436 and is in close contact with the peripheral wall 433, and the sealing member 271 prevents the door 272 from flowing through the inlet and outlet, and the door switch Drive device 273. Further, the inlet and outlet 437 of the loading chamber 40 and the inlet and outlet 325 of the casing body 32 are integrated, and a shutter device 45 for selectively preventing the communication between the second loading chamber 42 and the working chamber 31 is provided at the integration. The shutter device 45 includes a seal member 451 which is fixed in close contact with the side walls 433 and 323 around the entrances and exits 437 and 325, a door 452 which prevents the air from flowing through the inlet and outlet together with the seal member 451, and a drive device 453 for the door switch. Further, a shutter member 46 is formed in the opening formed in the partition wall 434 so as to be closed by the door 461 to selectively block the communication between the second and second loading chambers. The above shutter devices 27, 45 and 46 can seal the chambers in the closed state. A well-known device can be applied to the shutter devices, and the configuration and the description thereof will be omitted. The method of supporting the casing 22 of the small environment chamber is different from the method of supporting the loading chamber. In order to prevent the vibration of the base from being transmitted to the loading chamber 40 and the main casing 30 through the small environmental chamber, the housing 22 and the loading are possible. (4) (4) (4) "The state around π is set [the buffer for anti-vibration (called the heart. The first load to 41 is provided with the cover circle 2 of the plural (two in this embodiment)). The wafer holder 47. The wafer holder 47 is 曰E as shown in Fig. 5, and has four erect state fixings 47 which are mutually separated from each other by a rectangular substrate, and a long time*^/17〇 attack^ η 支柱 pillar 472 is to hold the support of the wafer k on the support portion in order to form two stages of support = 473 and 474'. 6 is connected between the pillars of the front end of the arm of the first and second transfer portions (the correction page) 312765 56 1288424 - The wafer is held close to the wafer arm. The loads 41 and 42 are used to illustrate the straight line of the vacuum venting device (not shown) that contains the vacuum venting device (not shown). 10-5^ 10-3⁄4) 〇, Room 41 is kept in a low vacuum environment, and the second enchantment 42 is high straight: ^—Valley high vacuum environment, which is effective Preventing contamination of the wafer by the use of the dead load chamber can be combined with the principle of the plurality of devices described later to improve the productivity of the defect inspection, and the vacuum around the electron source requiring the state of the tube in a high vacuum state. The production responsibility may be maintained in a high vacuum state. The first and second load chambers 41 and 42 are connected to a true gas transfer pipe and a vent pipe for an inert gas (for example, dry pure nitrogen) & 61^) That is, an inert gas vent pipe (injecting an inert gas to prevent oxygen gas or the like other than the inert gas from adhering to the surface) achieves an atmospheric pressure state in each of the load chambers. As described above, the apparatus body for performing inert gas ventilation is known. The structure of the inspection apparatus according to the present invention using an electron beam is used in a high temperature state in which the degree of thermoelectron emission is once reached when a typical lanthanum hexaboride (LaB6) or the like of an electro-optical system to be described later is used. In order to prevent it from coming into contact with oxygen, it is an important measure that does not shorten its life. The above stage can be implemented by the wafer in the pre-stage where the working chamber of the electro-optical system is placed. The environmental protection can be achieved by the environmental control. The work station device 50 is provided with a solid 57 (correction page) 312765 1288424, which is provided on the bottom wall 301 of the main casing 3, and is mounted on the fixed table + human X7 surface. Y direction 5 22 direction of direction) (left and right direction on the first drawing) ... 53; χ = movement in the X direction (the first picture is the rotation table 54 on the rotating table 54 where the holding portion 5^ is suspiciously rotated) And ', 邛 55. On the wafer mounting surface 551 of the holding portion 55, the wafer is detachably attached to the cradle, and the electrostatic hook is cut", and the temple can be used to mechanically use the wafer. Or a known structure in which the electrostatic fishing buckle is detachably attached and held. The stage device 5G operates the plurality of stages by a servo motor or an encoder (not shown) to hold the wafer held by the holding portion held on the mounting surface 551 to the electro-optical device. The electron beam to be irradiated is determined to have a high-precision mosquito position in the X direction, the γ direction, and the z direction (the vertical direction in the drawing) and the rotation direction (the Θ direction) of the axis perpendicular to the supporting surface of the wafer. Further, for the positioning in the two directions, for example, the position of the mounting surface on the holding portion can be finely adjusted in the two directions. Here, the position measuring device for the fine-diameter laser (the laser interference distance measuring device using the principle of the interferometer) can be used to detect the reference position of the mounting surface, and then the position is controlled by a feedback circuit not shown, together with the measurement or generation. The stepping or direction flat portion of the wafer is measured to detect the planar position and the rotational position of the wafer with respect to the electron beam, and the stepping motor or the like that can control the rotating table at a slight angle by rotation is continuously controlled. In order to prevent dust from occurring in the working chamber as much as possible, the servo motors 521 and 531 and the encoders 522 and 532 for placing the table are disposed outside the main casing 3〇. Further, the stage device 50 can be used for a known structure such as a stepper or the like, and a detailed description thereof will be omitted. Further, the above-described laser interference distance measuring device may be a known structure, and a detailed description thereof will be omitted. (Revision page) 312765 58 1288424 The rotation position and the χ, γ position of the wafer for the electron beam are input in advance to the signal detection system or the image processing system to be described later to calculate the basis of the obtained signal. In addition, the hooking mechanism provided in the holding portion is an electric crystal applied to the electrostatic hook by a voltage applied to the hook wafer, and presses three points on the outer peripheral portion of the wafer (preferably spaced at equal intervals between the circumferential sides). Shirt position. The wafer hooking mechanism has a pin (6) that fixes the pin (ample) & m. The automatic sales can realize automatic hooking and automatic unbuckling, and constitute the electric power. According to the embodiment, the table moved in the left-right direction in FIG. 2 is / (d) the table in the vertical direction is the γ stage, but in the same figure, the table moving in the right direction of J is the Y stage, and is moved up and down. The direction table is also a machine type flute 946$ provided in the housing center of the small environment chamber 2 (), and a robot screw 3 in the second load chamber 42. The first transport unit 61 has a configuration of the drive unit w: the axis: "the surrounding multi-section arm & 12 (4), and the present embodiment has a part of the arm 612 of the transport portion 61 that is mutually rotatable. The younger part is a shaft 613 for rotating the first structure (not shown) on the side of the moving portion 611. The well-known structure of the arm 612 can be rotated by the axis 613 by the relative rotation of the axis 以The mechanical hook or electrostatic hook that can rotate the axis of the axis and is partially away from the shaft 613: (4) a holding device for holding the wafer with a known structural towel (correction page) 312765 59 1288424 VII 6. The drive unit 6 ί] moves in the direction of the known structure. The elevating mechanism 615 makes it possible to move up and down the first transport unit 61 a

Any of the Ec's two cards that remain in the cassette holder

The r direction ΑΠ or M2 is extended and one of the wafers in the knee is cut at #4, and the word is shown in the cassette C). After that ==^ the front end of the arm _ the fishing shackle (not shown to the arm can be extended to the state of the pre-twisting 2 volts 2 map) and then rotate the arm "hold: the position of the arm in the 曰 direction M3 The rotation is stopped. The position where the pre-adjuster chamber 4 is extended (the second is placed in the second loading/wafer receiving portion 47) is mechanically held in the second loading chamber 41. _, for holding the wafer of the week ^ or the back. Its immortal in the peripheral part of the wafer in the overall shape 2 = road wiring) 'If the part is controlled, there are fear of breaking the device, ^ defects, etc..

The structure of the second conveying unit 63 is basically the same as that of the first conveying unit, and the wafer conveyance is performed on the mounting surface of the wafer holder 47 and the stage device; the description is omitted here. The first and second transport units 61 and 63 of the loading II 6G are transported from the cassette held by the concealing holding unit to the stage device 50 provided in the working chamber 31 while holding the wafer in a horizontal state. In the opposite direction, the arm of the transport unit only takes the wafer out of the cassette and retrieves it, places the wafer oxygen on the wafer holder and takes it out, and places the wafer on the workbench and removes it. mobile. Therefore, it is also possible to smoothly move a large wafer such as 30 cm (revision page) 312765 60 1288424. Next, the operation of transporting the wafer into the working chamber 31 by the cassette C supported in the cassette holding portion will be described next. The operation of the stage device 50. The cassette holding portion 10 selects an appropriate configuration for each of the cassettes or the automatic operation cassettes as described above. The cassette of the present embodiment (when placed on the lifting table of the cassette holding portion 1), the lifting table u is lowered by the lifting mechanism 12 to integrate the cassette c with the inlet and outlet 225. The card E is integrated with the inlet and outlet 225. Thereafter, a cover (not shown) provided on the cassette is opened, and a cylindrical cover is disposed between the cassette c and the entrance and exit 225 of the small environment chamber to block the inside of the cassette and the small environmental chamber from the outside. The above-described structure is known, and the structure and operation description thereof are omitted here. When the shutter device that opens and closes the inlet and outlet 225 is provided on the small environmental chamber side, the shutter device is operated to open the door 225. On the one hand, the first conveying portion 61 The arm 6丨2 is in a state of stopping in either of the directions M1 or M2 (in the present description, the direction of M1), and the entrance and exit 225 is opened = the arm extending from the front end receives the wafer accommodated in the card (4). In the case of the sorrow, the position of the upper and lower ribs of the arm and the wafer taken out by the cassette is 5 weeks from the driving unit 611 and the arm 612 of the first conveying unit 61: the movement execution 1 or the card (4) The up and down movement of the lifting platform of the holding section is achieved by the upper two. Keep the arm set too cartridge ^), eight arms 612 to the center axis 〇1 〇1 a state of a long side or Weng. Then the arm is extended to place the handle on the pre-adjuster 25, and the direction of the rotation direction of the wafer (the direction perpendicular to the wafer plane) is set by the pre-adjustment (correction page) 312765 61 1288424 The direction of rotation of the heart axis) is positioned within a predetermined range. After the positioning is completed, the conveying unit 61 receives the wafer from the pre-adjuster 25 with the tip end of the arm, and then retracts the arm so as to be able to extend in the direction M4. Then, the shutter 2 2 is opened by the door 272 to open the inlets and outlets 226 and 436, and the arm 612 is extended to place the wafer on the upper side or the lower side of the wafer holder 47 in the first load chamber 41. Further, before the shutter unit 27 is opened and the wafer holder 47 receives the wafer as described above, the opening 435 formed in the partition wall 434 is closed by the shutter 461 of the shutter unit 46 in an airtight state. In the wafer transfer process of the first transport unit, the gas supply unit 231 provided in the casing of the small environment chamber flows out of the clean air in a laminar flow direction (the downward direction prevents the wafer from adhering dust thereon during transportation. A part of the surrounding air (in the present embodiment, approximately 2 〇 of the air supplied from the supply unit is mainly dirty air) is sucked out of the casing by the suction pipe 241 of the discharge device 24. The rest of the air is provided at the bottom of the casing. The recovery pipe 232 is recovered and sent back to the gas supply unit 231. When the first transfer unit 61 mounts the wafer in the wafer holder 47 in the i-th mounting chamber 41 of the loading chamber 4, the fast π device 27 Closing the i-th loading chamber 41j. Thereafter, the first loading chamber 41 (four) is filled with an inert gas to be evacuated, and (4) the inert gas is discharged to make the first loading chamber 41 into a first first load. The vacuum environment in the range of 41 can be evacuated to a low degree of vacuum. When the vacuum level is reached in the loading chamber 41, the shutter device 46 is operated to open the door 434 which is closed by the door tree, and the arm 632 of the second conveying portion 63 is extended. Out of the wafer holding device with its front-end holding device - wafer (Loading (correction page) 312765 62 1288424, on the 刖 end or by the hook provided at the front end). After the wafer is finished, it is retracted into the 'shutter device 46 and then moved to close the entrance 435 with the door 461. Shutter Before the device 46 is opened, the arm 632 is in a state of being stretched in the direction N1 toward the wafer holder 47. As before, before the shutter device is opened, the door 452 of the device 45 closes the entrances and exits 437, 325, and loads the second to The inside of the working chamber 31 is prevented from communicating with the inside of the working chamber 31 in an airtight state, and the second loading chamber 42 is evacuated. The door closing device 46 closes the inlet and outlet 435 and then vacuums the second loading chamber to make it reach the first level. The loading chamber has a higher degree of vacuum. During this time, the arm of the second conveying portion 63 is rotated to a position that can be extended in the direction of the table device 50 in the working chamber 31. On the one hand, the work in the working chamber 31 is placed. In order to move the Y stage 52 upward according to Fig. 2, the center line 〇0 - 〇 of the cymbal 53 is approximately the same as the axis ^1 of the axis of rotation 〇2_〇2 passing through the second transport unit 63. Position and move the platform 53 on the second picture 4 to the leftmost position of the f When the vacuum state of the second loading chamber and the working chamber are about the same, the door 452 of the shutter device 45 is actuated to open the two ports 437, 325 'the arm is extended to keep the front end of the arm of the wafer close to the working valley to The work station device in 31. The wafer is then placed on the mounting surface 551 of the work station device 5. After the wafer is placed, the rear arm is retracted, and the shutter device 45 closes the entrances and exits 437, 325. The movement of the wafer in the Ec to the stage device is performed, and the wafer that has been placed on the unit is processed by the station device, and the operation opposite to the above is performed in the case of Ec. When the wafer carrier 47 is placed on the wafer holder 47, the second carrier can be transported between the wafer holder and the station device (correction page) 312765 63: Inspection site =; p between the card s and the crystal truss, the A and the unprocessed second carrier, the wafer holder 47 has the processed wafer, the wafer B, the first to remove the sore device 5〇 and start processing. At the self-contained station I set 5 cylinders /, the processing will be processed by the arm h

With the arm (4), the wafer holder 47, the unprocessed wafer C wafer holder 47 is also withdrawn, and after being positioned by the pre-adjuster, the moving main garment is carried to the wafer of 41, and the processing will be processed during the processing: In the wafer 47, the processed wafer A is replaced with the unprocessed wafer C during the ruin. Depending on the method of inspection and evaluation by the above-mentioned devices, the device 50 can be arranged in parallel, and each device can be processed from a wafer holder to process a plurality of wafers. _ * Figure 6 shows a modification of the method of supporting the main casing. The housing support 33a of the sixth embodiment of Fig. 6 is composed of a rectangular steel plate 331 & of thick meat, and is provided with a housing body 32a. Therefore, the bottom wall 321a of the casing body 32a is formed to have a thinner configuration than the K. In the modification shown in Fig. 6 [β], the casing main body 32b and the loading chamber 40b are supported by the frame structure 336b of the casing supporting device 33b in a suspended state. The lower end of the vertical frame 337b fixed to the frame structure 336b is fixed at the four corners ' of the bottom wall 321b of the casing body 32b, and the peripheral wall and the top wall are supported by the bottom wall thereof. The vibration isolating device 37b is provided between the frame structure 336b and the frame 36b. The load chamber 40 is also suspended by a lower portion 49b of the frame structure 336. According to the modification of the casing main body 32b of the sixth drawing [B], since the support of the hanging type is supported, it is possible to reduce the center of gravity of the main casing and the various machines (correction page) 312765 1288424 provided therein. According to the above-described support method including the main casing and the loading chamber of the modification, the vibration of the base is not transmitted to the main casing and the loading chamber. According to a modification not shown, only the housing body of the main housing is supported by the housing support device, and the loading chamber is placed on the base in the same manner as the adjacent U environmental chamber. According to another modification, not shown, only the casing body of the main casing is supported by the frame structure in a hanging manner, and the loading chamber can be provided on the base in the same manner as the adjacent small environmental chamber. The electro-optical device 7A (the first embodiment, the i-th image) is provided with a lens barrel 7 fixed to the casing body 32 as shown in the schematic views of Fig. 7 and Fig. 8, and the primary electron microscope is recognized. (hereinafter referred to as primary optical system) 72, an electron optical system and a detection system 76 of a secondary electron optical system (hereinafter referred to as secondary optical system) 74. The primary optical system 72 is an optical system that irradiates an electron beam on the surface of the circle W of the inspection object, and includes an electron gun π 1 that discharges the electron beam, and a capacitor lens 722 that is an electrostatic lens that focuses the electron beam that is emitted from the electron gun 721. Provided below the capacitor lens 722 having a plurality of openings to form the sub-electron lines into a plurality of primary electron lines, that is, a plurality of opening plates 723 of the plurality of electron lines; an electrostatic lens type reduction lens 724 for reducing the primary electron lines; The filter is the ExB separator 725; and the objective lens 726, as shown in Fig. 7, the surface of the inspection object S is the optical axis of the primary electron beam which is placed in the uppermost portion by the electron gun 721 and is intermittently discharged by electrons. Vertical setting. In order to remove the influence of the curvature reduction of the reduction lens 724 and the objective lens 726, the plurality of openings 723a formed in the plurality of aperture plates 723 (nine in the present embodiment) are formed as shown in FIG. The center of the circle 65 (correction page) 312765 1288424, on the circumference, and the interval Lx in the x direction of the projection image of the opening on the x-axis is the same setting. The secondary optical system 74 includes two types of electrostatic lens-type enlarged lenses 741 and 742, which are separated from the primary optical system by the primary/six separator 725, and a plurality of aperture detecting plates 743. The opening 743a formed in the plurality of opening detecting plates 743 has a one-to-one correspondence with the opening 7 2 3 a formed in the plurality of opening plates 723 of the primary optical system. The detection system 76 is provided with a plurality of detectors 761 corresponding to the respective openings 743a of the plurality of aperture detecting plates 743 of the secondary optical system 74, and is disposed adjacent thereto, and the detectors 761 are connected to the respective detectors 761 via A/D. The transducer 762 is electrically connected to the image processing unit 763. Next, the operation of the above-described electro-optical device (second embodiment, Fig. 7) will be described. The primary electron beam emitted by the electron gun 721 is focused by the capacitor lens 722 of the primary optical system 72 to form an overlap at point P1. The primary electron beam focused by the capacitor lens 722 on one side passes through the plurality of openings 723a of the plurality of aperture plates to form a plurality of primary electron lines, which are then reduced by the reduction lens 724 and projected at the position P2. After focusing on the position P2, the objective lens 726 is used to focus on the surface of the wafer W. On the one hand, the primary electron beam is subjected to the action of the deflector 727 disposed between the reduction lens 724 and the objective lens 726 to scan and deflect the surface of the wafer W. The primary electron beam of the focused plurality (the nine in the present embodiment) illuminates the plurality of points of the sample S, and the secondary electrons are emitted from the plurality of points irradiated. The secondary electron is attracted to the thin line by the attraction of the electric field of the objective lens 726, and is biased toward the secondary optical system 74 via the ExB separator 725. Secondary Power 66 (Revision Page) 312765 1288424 - The sub-image is focused at a position P3 that is closer to the separator 725 than the position P2. The reason is that the primary electron beam has 5 〇 OeV of energy on the wafer, while the secondary electron ray has only a few eV of energy. The image of the secondary electrons focused on the position P3 is focused on the corresponding opening 743a of the plurality of aperture detecting plates 743 via the two-stage enlarged lenses 741 and 742, and the image is detected by the detector 761 provided corresponding to each of the openings 743a. Detector 761 converts the detected electronic line into an electrical signal indicative of its intensity. The electric signals converted as described above are converted into digital signals by the respective A/D converters 762, and are input to the imaging processing unit 763. The key processing unit 763 converts the input digital signal into key image data. Since the imaging processing unit 763 supplies a scanning signal for deflecting the primary electron beam, the imaging processing unit displays an image of the wafer surface. This image is compared with a standard pattern comparator (not shown) previously set in a setter (not shown) to check whether the detected (evaluated) pattern of the wafer w is good. Then, as the image registration, the measured pattern of the wafer W is moved closer to the optical axis of the optical system, and a line scan is performed to take out the line evaluation signal, and the appropriate correction can be performed to determine the formation. The line width of the graphic on the surface of the wafer. Further, when the primary electron beam passing through the opening of the plurality of aperture plates 723 of the primary optical system focuses on the surface of the wafer W and the secondary electrons emitted from the wafer are imaged on the detector 761, it is particularly necessary to cause the primary optical system to occur. The distortion, the axial color difference and the visual field non-point three are the least affected. For the relationship between the intervals of the first plurality of electron lines and the secondary optical system, the interval between the primary electron lines is set to be larger than the difference between the secondary optical systems, and the crosstalk between the complex electronic lines is eliminated. (Revision page) 312765 67 1288424; A precharge unit (Pre charge uni t) 81 is provided in the lens barrel 71 adjacent to the electro-optical device 7 in the working chamber 31 as shown in Fig. 1. The inspection device is a device that scans a wafer, which is a substrate to be inspected, by electron beam scanning to inspect a device pattern formed on the surface of the wafer, and the like, and the secondary electrons generated by the irradiation of the electron beam are The data on the surface of the wafer is in a state in which the surface of the wafer is charged up due to conditions such as the material of the wafer and the energy of the electrons. Further, on the surface of the wafer, there is a possibility of generating a strong charging portion and a weakly charged portion. If the amount of charge on the surface of the wafer is uneven, the secondary electronic data will also be uneven so that the correct data cannot be obtained. In the present embodiment, the precharge unit 81 including the charged particle irradiation unit 811 is provided to prevent the above unevenness. Before the inspection electrons are irradiated to a predetermined portion of the wafer to be inspected, the charged particle irradiation portion 811 of the precharge portion irradiates the charged particles to eliminate the unevenness in charging. When the surface of the wafer is charged, the image of the wafer is formed in advance, and the image is evaluated to detect, and then the precharge portion 81 is operated in accordance with the detection result. The pre-charging portion can also be used to illuminate the primary electron beam. The potential application unit 83 shown in FIG. 9 applies a number of places to the installation table of the stage on which the wafer is placed, based on the fact that the secondary electronic material (secondary electron generation rate) emitted from the wafer depends on the potential of the wafer. The potential of V to control the occurrence of secondary electrons. The potential applying mechanism has a deceleration of energy originally generated by the irradiated electrons, and the wafer has an electron energy of about 1 〇〇 to 5 〇〇 eV. As shown in Fig. 9, the potential application mechanism 83 includes a voltage application device 831 on the mounting surface 541 of the electrical connection station device 50, and a charge investigation and voltage determination system (hereinafter referred to as a survey and determination system) 832. The investigation and decision system 68 (amendment page) 312765 1288424 system 832 includes a monitor 833 electrically connected to the image forming portion 763 of the detection system 76 of the electro-optical device 7A, and an operator 834 connected to the monitor 833. And a CPU 835 connected to the operator 834. The CPU 835 supplies a signal to the voltage applying means 831 and the deflector 727. The voltage applying means is designed to find a potential at which the wafer to be inspected is not easily charged and apply the potential. The method of performing an electrical defect inspection on the inspection specimen may also use the phenomenon that the portion of the incoming gas is insulated and the voltage of the portion is different when the portion is energized. That is, the test piece is charged beforehand to cause a potential difference between the voltage of the originally electrically insulated portion and the voltage which is originally an electrically insulating portion but becomes a conductive state portion for some reason, and thereafter irradiates the electronic wire of the present invention with The data having the potential difference is obtained, and the power-on state is checked by analyzing the acquired data. The electronic wire calibration mechanism 85 shown in Fig. 10 includes a plurality of Farady cups 851 and 852 for measuring the currents of the current flowing at a plurality of positions on the side of the mounting surface 541 of the wafer on the rotary table. The Faraday Cup 851 is for fine wire (about 0 2/m), and the Faraday cup 852 is for thick wire (about 30//m). The Faraday cup 851 for fine wire is used to measure the electron line distribution (prof i le) when the rotary table is stepped and rotated. The Faraday cup for the thick electronic wire 852 measures the total current of the electronic wire. The upper surfaces of the Faraday cups 851 and 852 are formed to have the same height as the upper surface of the wafer W placed on the mounting surface 541. In the above state, the electronic wires that are discharged by the electrons are often monitored. Electronic robbing does not always release a fixed electronic line, and its release amount changes during use. (Revision page) 312765 69 1288424 The adjustment control device 87 is a device for positioning the wafer f to the electro-optical device 70 using the table device 5, and is used for the wafer to perform the general positioning of the optical microscope 871 by wide field of view. (measurement that is lower than the magnification of the electro-optical system), control of the two-seventh rate of the electro-optical system of the 甩electron optical device 7, focus adjustment, inspection field setting, pattern adjustment, and the like. As described above, it is necessary to inspect the wafer at a low magnification by an optical system to automatically check the crystal pattern, and to observe the wafer pattern with a small field of view to perform wafer adjustment, it is necessary to easily detect the adjustment mark by the electron line. The optical microscope 871 is provided in the casing (movable in the casing). The light source for operating the optical microscope is also disposed in the casing. The electron optical system that is observed at a high magnification is shared only with the electro-optical system of the electro-optical device 7 (primary optical system 72 and secondary optical system 74). Figure u shows its outline. When the observed point on the wafer is observed at a low magnification, the X stage 53 on which the stage is placed is moved in the X direction to move the observed point of the wafer into the field of view of the optical microscope. Using the optical microscope 871 to view the wafer in a wide field of view, the observed position on the wafer is displayed on the monitor 873' via the CCD 872 to approximately determine the viewing position. In this case, it is also possible to change the magnification of the optical microscope from a low magnification to a high magnification. * Next, the stage device 50 is moved by a distance corresponding to the interval h between the optical axis of the electron optical device and the optical axis of the optical microscope 871 to determine in advance the position of the field of view on the wafer to be moved to the position of the electron optical device by the optical microscope. . The distance between the axis of the electro-optical device and the optical axis 〇4 to 4 of the optical microscope 871 "(In this embodiment, both of them may have a positional deviation in the X-axis direction but may be displaced in the γ-axis direction) For the prediction (correction page) 312765 70 1288424, therefore, only by moving the value άχ, the observed point can be moved to the viewing position. After the observed point of the electro-optical device is moved to the viewing position, the observed point is observed at a high magnification by the electron optical system. Performing SEM imaging to display the image memory on the monitor 765. After displaying the observation point of the wafer at a high magnification by the electron optical system as described above, the wafer is detected by a known method for the power station device 5 The positional deviation of the direction of rotation of the center of rotation of the rotation, that is, the deviation of the direction of rotation of the wafer of the optical axis 〇3-〇3 by the detecting electron optical system is 0, and the X-axis of the pre-turn pattern of the electron-lighting device is detected and Positional deviation in the γ-axis direction. Then, according to the detected value and the data of the inspection mark set on the wafer or the shape of the graphic shape of the circle, the wafer is adjusted by the action of the control station device. An eight-figure example of a semiconductor device according to the present invention will be described with reference to FIGS. 12 and 13. FIG. 12 is a flow chart showing an embodiment of a method for fabricating a semiconductor device according to the present invention. The manufacturing process includes the following main steps: The manufacturing process of the round circle (or the wafer preparation process for preparing the wafer) 偌 The manufacturing process of the mask used for the road light (or the process of preparing the mask for the mask) =) The wafer processing process in which the wafer processing operation is performed on the wafer, which is necessary for processing, is made into a wafer forming process. (5) Wafer inspection for inspection of the fabricated wafer In addition, the above-mentioned main processes further include several sub-processes. (Revision page) 312765 71 1288424 The wafer processing process of (3) which has a decisive influence on the performance of the semiconductor device in the above main process. The circuit pattern is sequentially laminated on the wafer to form a plurality of wafers for the memory and the Mpu. The wafer processing step includes the following steps: (4) forming a dielectric thin film and a wiring portion constituting the insulating layer, or forming Film forming step of a metal film such as a pole portion (using CVD, sputtering, etc.) (Β) oxidizing the film layer and the wafer substrate, and etching the film layer and the crystal substrate, etc. (reticule) Photolithography process for forming a resist pattern (8) A process for etching a thin layer and a substrate by using an anti-(four) pattern (for example, using a dry etching technique) (E) Ions. Impurity injection diffusion process (F) Residual film peeling process (G) The process of inspecting the processed wafer: the round processing process repeats the required number of layers as needed to make the conductor device. The j-printed dry plate 13th shows the wafer of the 12th figure A flowchart of a photographing process at the center of the processing step. The photolithography step includes the following steps. ^ On the wafer forming the circuit pattern in the previous step, the anti-(4) anti-domain coating process (b) the step of exposing the resist film. The development of the film of the light of the road light to obtain the pattern of the resist film, the image of the film, the image of the image of the film, the stability of the chemical industry 72 (revision page) 312765 1288424 - the above semiconductor The device manufacturing process, the wafer processing process, and the photolithography process are well-known techniques and need not be further described. By using the defect inspection method of the present invention and the lack of k check device for the inspection process of the above (G), the semiconductor device having the fine pattern can be inspected at a good yield, and the entire number can be inspected to improve the product. Yield and prevent shipment of defective products. According to the present invention, the following effects can be achieved. (A) Since each of the constituent devices of the inspection apparatus using a plurality of electronic wires can be combined in function, the inspection target can be processed with high productivity. (B) Since the sensor for observing the cleanness is provided in a small environmental space, it is possible to monitor the dust in the space to inspect the object to be inspected. (C) Since the precharge portion is provided, the wafer formed of the insulator is also less susceptible to charging. Fig. 14A is a schematic view showing an optical system of an electronic wire device woo according to a third embodiment of the present invention. The complex emitters 1〇〇1,1 002,1〇〇3 release one of the k electron lines from the electric grain lens 1 〇 〇 4 to reduce it to the image plane 1 〇 〇5,

Further, the lens 1006 and the objective lens 1008 are contracted and projected onto the test piece surface 1010. The complex emitters show only one column in Figure 14, but a complex sequence is shown as shown in Figure 17A. Fig. 17A shows the emitter of 3x3, and Fig. 7B shows the cross section of Fig. 17B along 17B-17B. In Fig. 17A and Fig. 17B, 1〇21 is

The Si substrate 022 is a Mo emitter, 1023 is an Au extraction electrode, and 024 is a Si 3 沁 insulating film. The number of emitters can be selected as appropriate. The lens is provided with two to three planar electrodes having openings of 2 to 1 diameter at intervals of 2 to 1 Omni in the optical axis direction, and different voltages are applied to the respective electrodes to constitute a convex lens. (Revision page) 312765 1288424 Secondary electrons emitted from the surface of the test piece by the primary electron beam emitted by the number of emitters 1001, 1002, 1003 are applied to the test piece surface I 〇 〇 and the objective lens 10 〇 8 The accelerating electric field is accelerated, so that the secondary electrons emitted by the large exit angle are twisted into a thin line before being incident on the objective lens 1 〇〇8, and then twisted by the opening 1007' by the lens 1〇〇6. The same image surface 1005 of the electron beam is provided with an ExB separator 1〇〇9 at the image surface 1005, so that the secondary electrons passing through the lens 1 006 are separated from the primary optical system. The £xB separator 1〇〇9 is a structure in which the electric field and the magnetic field are made straight in a plane perpendicular to the normal line (the direction above the paper surface) of the sample surface 1010, and the relationship between the electric field, the magnetic field, and the primary electron energy is such that the primary electron Straight forward setting. The separated secondary electrons are optically enlarged by the lenses 1〇11 and 1〇12, and the detecting surface 1013 forms a plurality of images. On the detecting surface 1〇13, detectors 1〇14 1015 and 1G16 corresponding to the primary electrons of the rear emitters 100b1, 2, and 1003 are provided, and the electron beam is irradiated to the surface of the test piece to be released. Two $ electrons. The complex emitter _, _, is deleted to be corrected - the secondary optical system 3 image surface helper ' is slightly offset in the z-axis direction. That is, the emitter 100 on the optical axis recognizes the position where the four pieces are taken, and the emitter (10) 2 that is separated from the optical axis is set to be closer to the test piece side than the optical axis 1001, and is further away from the optical axis. The emitter (10) is located closer to the test piece. In order to know and shoot the test piece comprehensively, from Pan Pan* ▽ —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— —— Further, the second chapter; h > movement in the scanning of an electronic line also makes the electrostatic deflector 1 of the photonic system of 1 or 2, scanning position so that it often shoots W ^ field 'to make it not secondary to secondary electrons Private detectors 1014, 1015, 1016

(Revision page) Control of 3Π765 74 1288424. That is, the secondary electrons of the primary electron lines of the emitters 1001, 1002, and 1003 are controlled by the respective injection detectors 1014, 1015, and 1016. The detector or the like is an electrode on the curved surface of the hole in which the number of detectors is provided in front of the pIN diode to which a voltage of about 20 kV is applied, and a voltage of about lkV is applied to the electrode. A convex lens that is subjected to an electric field formed by a voltage of 20 kV leaking from the hole, and secondary electrons reaching the near hole of the hole pass through the hole and enter the detector. The shape of the curved surface forms a shape that corrects the curvature of the image plane of the primary optical system. Next, the relationship between the photographing position interval of the plurality of electron lines and the secondary optical system will be described. Figure 15 shows the secondary optics and the opening angle. As shown in the figure, it is assumed that the secondary electrons within the acceptance angle αΐ pass through the objective lens 1〇〇8, the opening twist 1007, and the lens 1006 are imaged on the image plane 1〇〇5. Here, the opening half angle of the image plane 1〇〇5 is ai, and the magnification ratio of the secondary optical system is Μ, the relationship between the appearance angle α〇 and ai seen by the objective lens 1008 is ai/a〇=1/ M. Further, it is assumed that the electron beam potential of the object lens 1〇〇8 is V8, and the initial energy of the secondary electron is Vini, and the angle is (α1/α〇) = V8/Vini 〇 Figure 16 is shown on the test piece surface.丨〇1〇's relationship with the opening half angle ji In the 16th figure, s is the spherical surface, accounting for c〇ma for the image (c〇ma), and 5C for the color difference, accounting for total . If the tolerance of 20//m is allowed, the opening half angle α soil needs to be set below 5·3 mrad. The initial energy of the secondary electron to be detected is considered to be sufficient. • LeV to l〇eV is sufficient, and the magnification magnification μ is set to 5, and the electron line potential V8 of the objective lens 1008 is er, then α l = ii85 (4) · 9. . Because of the angle of the text. To 6 〇. More than 9%% of the secondary electron income (revision page) 312765 75 1288424; (refer to the US Patent No. 5412210, the description of Figure 6), if the secondary optical system of the opening half angle ai decomposition energy can be 5. 3mard degree, detection If the size of the device is converted to 4 times the size of the test piece, more than 90% of the secondary electrons can be collected without crosstalk. If the interval between the complex emitters is 100 #m, the crosstalk between the emitters is not a problem. It is not necessary to collect more than 90% of the secondary electrons. If a sufficient S/N ratio is obtained by collecting more than 5%, the secondary electrons emitted at an angle of less than 45° may be collected by the detector. The original collection rate of secondary electrons can be expressed by the following formula. S45. · 0 sin^ cos^ / S 〇9〇esin^ cos^ =〇. 5 As described above, the primary electron beams are mutually irradiated at positions separated by the distance of the secondary optical system. Fig. 14B is an enlarged view of the electron beam irradiation surface viewed from above, and the distance N in the figure is the decomposition energy converted by the lens 1〇〇8, l〇u, and 1012 on the surface of the test piece. As shown in the figure, the distance N is equal to or greater than the distance between the two points that can be recognized, and the complex electronic line without crosstalk can be obtained, and high productivity is obtained. The electronic line device of this configuration can be used for defect inspection and measurement of minute distances in a semiconductor device. In the wafer inspection process of the flowchart of the example of the manufacturing method of the semiconductor device shown in Fig. 12 and Fig. 13, if the electronic wire device of Fig. 14A is used, the product can be inspected with good productivity, and the entire product can be inspected. Improve the yield of products 'prevent the shipment of defective products. As can be understood from the above description, the electron beam device according to FIG. 14A can detect the crosstalk without being generated by the majority of the secondary charged particles discharged from the test piece, thereby enabling the defect inspection or the pattern line width measurement with high S/N ratio. . Another-human optical system is limited to the surface of the test piece is 2 〇 # m can also be charged (correction page) 312765 76 1288424 high-precision secondary optical system, and thus the formation of a plurality of charged particles Jane: Since the detection result is not necessary, it is not necessary to use the secondary optical system to vertically set the test piece, and the single optical field is formed between the 5 H subtraction surface and the primary lens of the primary optical system, and an acceleration electric field is formed on the secondary optical system.容册-_人▼Electrical particle line twisting, and can release the wide-angle range of the second-under-I-electric particles in the initial stage to make the fine electron line, can measure the particles: thus can get good S / N (four) The 18th figure shows the conventional straight work of the charged electronic line device =). :: (4) 19 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Device (work station, etc.) 2100 wire assembly Λ '422 shows a schematic sectional view of the second embodiment of the charged electronic device according to the sixth embodiment of the present invention, and FIG. 23 shows a schematic cross-sectional view of the present embodiment of the present FIG. A schematic cross-sectional view of a charged electronic line farmhouse (gongkousi) 2400 of the present invention is the same as the symbol of the second part. The same figure is also shown in Fig. 2〇T〇2::; Fig. _ is a diagram showing the charged electronic wire package of the fourth embodiment. The upper side of the Y-direction movable portion 2005 is provided with a larger = scoop level extending in the +γ direction and the _γ direction (the left and right m spacers in the figure _, and the upper portion of the movable portion in the χ direction constitute a small hanging The retracting portion _ ° and the X-direction movable portion _ above (correction page) 312765 77 1288424 also constitute the same direction in the ± X direction (the left and right direction on the 20A diagram) between the partition 2 012 ' and the workbench Between the top and the bottom, the skein portion 经常51 is often formed. The work station 2007 is fixed to the bottom wall by a known method in the casing 2008. Therefore, the winding portion 2050 is often formed regardless of the position of the test piece table 2004. And 2051, when the movable portions 2005 and 2006 move, even if the gas is released from the guide surfaces 2006a and 2007a, the movement of the released gas is prevented by the winding portions 2050 and 2051, so that the space of the test piece irradiated by the charged electron beam can be made close to the space. The pressure rise of 2024 is suppressed to a very small level. On the side and the lower surface of the movable portion 2003 of the table and below the movable portion 2006, a groove for differential exhaust gas as shown in Fig. 19 is formed around the hydrostatic bearing 2009. The tank is evacuated, so that the winding portions 2050, 2 are formed. At 051, the gas discharged from the guide surface is mainly exhausted by the differential exhaust portions. Therefore, the pressure in the spaces 2013 and 2〇15 inside the table is higher than the pressure in the chamber C. Not only will the exhaust vents 2017 and 2018 vent the space 2013 and 2015, but the vacuum venting elsewhere will reduce the pressure of the space 2013 and 2015, and further reduce the pressure rise of the test piece near 2024. There is a vacuum exhaust passage and 2011-2. The exhaust passage is through the work station 2〇〇7 and the casing 2〇〇8 opens to the outside of the casing 2008. The exhaust passage 2011-2 is formed in the movable direction in the χ direction. An opening is provided in the lower surface of the X-direction movable portion 2006. Due to the arrangement of the spacers 2 012 and 2 014, it is necessary to increase the capacity so that the chamber C does not interfere with the spacer, but the spacer is formed into a telescopically flexible structure. The above problem can be improved. In the present embodiment, it is conceivable that the spacer is made of rubber in a bellows shape, and the end portion in the moving direction is fixed to the inner wall of the movable portion 2006 in the direction of the partition plate 2〇14 (modified page) 3Π765 1288424. The spacers 2〇12 are fixed to the housing 2 0 0 8 Fig. 21 shows a charged electron beam device 2100 according to a fifth embodiment of the present invention. According to the fifth embodiment, at the front end portion of the lens barrel, that is, around the charged electron beam irradiation 邰^002 and the test piece s. The state in which the winding portion is formed constitutes a tubular portion and portion 2016. In this configuration, when the gas is released from the χγ table and the pressure in the valley rises to c, the inner portion 2〇24 of the space is also the spacer portion. Since the evacuation is performed by the vacuum piping 2〇1〇 at intervals of 2016, a pressure difference is generated between the inside of the chamber c and the inside of the gap 2024, so that the pressure inside the gap is lowered to a pressure of 2024. The gap between the spacers 2〇16 and the test piece varies depending on the degree of maintenance of the pressure between the irradiated portion and the periphery in the C, and is generally in the range of several tens/m to several mm. Further, the sound in the space between the partitions 2 and 16 is communicated by a known method. ^ The π electric electron beam is placed in a state in which a high degree of electric dust of a certain kV is applied to the test piece S. If a material having conductivity is placed in the vicinity of the test piece, discharge occurs. Here, the partition portion 2〇16 may be formed of an insulator such as Taowan, and the discharge may be avoided between the test piece S and the space portion 2016. The ring portion 2004-1 surrounding the test piece S<wafer) is a plate-shaped adjustment member fixed to the test piece table 2004, and the end portion of the test piece such as the wafer is irradiated with an electron wire 衿 to the interval The state in which the minute gap 2052 is formed over the entire circumference of the front portion of the portion 2〇16 is set to the same height as the wafer. Therefore, when the position of the test piece $4 is taken, and the electron beam is applied, a fixed minute gap is often formed at the front end portion of the spacer 2 〇16, thereby maintaining the space around the front end portion of the lens barrel. 2024 pressure. 79 (Revision JL page) 312765 1288424 Fig. 22 shows a charged electronic wire device 2200 according to a sixth embodiment of the present invention. A spacer 2019 having a differential exhaust structure is provided around the charged electron beam irradiation unit 2002 of the lens barrel 2001. The partition portion 2019 is formed in a cylindrical shape. The inside thereof has a circumferential groove 208 0, and an exhaust passage 2021 extends upward from the circumferential groove. The exhaust passage communicates with the vacuum piping 2023 via the internal space 2022. A minute gap of several tens to several mm is formed between the lower end of the partition portion 2019 and the upper surface of the test piece S. When the gas is discharged from the stage by the movement of the stage, the pressure in the chamber c rises, and when the gas is to flow into the tip end portion, that is, the charged electron beam irradiation unit 2002, the spacer portion 2〇19 is also used to make the test piece. The gap between the s is twisted to make the conduction very small, and the gas flow is blocked and the inflow is reduced. Further, since the inflowing gas is exhausted to the vacuum piping 2023 by the circumferential groove 2020, the gas flowing into the space 2〇24 around the charged electron beam irradiation unit 2〇〇2 can be substantially eliminated, and the charged electron beam irradiation unit 2 can be removed. The pressure of 2 is maintained at the desired high vacuum. Figure 23 is a diagram showing a charged electronic wire device 2300 according to a seventh embodiment of the present invention. A space is provided around the chamber c and the charged electron beam irradiation unit 2〇〇2, and the electro-optical line irradiation unit 2〇〇2 is separated from the chamber c. The spacer 2026 is connected to the chiller via a support portion 2029 formed of a material having good thermal conductivity of copper and material, and is cooled to _1 至 to 2 〇 代 = part 2027 间隔 in the partition portion 2 for preventing cooling The heat between the 〇26 and the lens barrel is 2^", and the material with poor heat conduction such as resin is formed. The part = ', formed of an insulator such as ceramic, is disposed at the lower end of the spacer portion - blocking 4 pieces S and the spacer 2G26 The function of the discharge occurs. (Revision page) 312765 80 1288424 - According to the above configuration, the gas molecules flowing into the charged electron beam irradiation portion in the chamber c are blocked by the partition portion 2026, and even if they flow in, they are subjected to the surface of the portion 2026. Since the trapping is carried out, the charged electron beam irradiation unit 2〇24 can be kept at a low pressure. The refrigerator can be cooled by liquid nitrogen or various refrigerators such as a He freezer or a pulse tube type refrigerator. A charging electron beam device 2400 according to an eighth embodiment of the present invention is shown. The movable portion of the table 2003 is provided with a partition 2 between the second drawing (Π2 and 2014), and the test piece table 2004 is moved to any position and is also used by the partition plate. Will be in the space within the workbench 2013 and The gaps 2050 and 2051 in the chamber C are spaced apart. A spacer portion 2016 similar to that of Fig. 21 is formed around the charged electron beam irradiation unit 2002. The space 2024 in the chamber c and the charged electron beam irradiation unit 2002 is received. The twisted portions 2052 are spaced apart. Therefore, even when the pressure of the portion is increased by the suction of the gas in the space 2〇13 during the movement of the work platform, the pressure in the chamber c can be raised low, and the pressure in the space 2〇24 The rise can be further depressed. Thus, the charged electron beam can be irradiated to the space 2〇24 in a low pressure state. For example, the spacer portion 2016 can be formed as a spacer 2019' having a differential exhaust mechanism therein or formed as shown in FIG. The spacer 2026, which is cooled by the refrigerator, can maintain the space 2024 in a stable low voltage state. Fig. 25 shows an optical system and a detector mode of the charged electron beam device 2500 according to the ninth embodiment of the present invention. The optical system and the detector are provided in the lens barrel, and the optical system 2060, which is required to be used with any optical system and detector, is provided with an optical system 2060 for irradiating the test piece s placed on the stage 2003. Charged electronic wire The primary optical system 2〇61, and the secondary optical system 2071 that receives the secondary electrons emitted from the test piece. The primary optical system 81 (correction page) 312765 1288424: 2〇61 has an electron gun 2062 that discharges the charged electron beam, and the electron gun 2 〇62 discharged electric power. The sub-line performs focusing on the lens systems 2063 and 2064 formed by the two-stage electrostatic lens, and the deflector 2065, and the charged electron beam is deflected so that the optical axis is perpendicular to the surface of the object. The Εχβ separator 2 〇6 6 and the two-stage electrostatic lens form lens systems 2〇67 and 2〇68. Electronic grab 2 0 6 2, lens 糸 2 0 6 3 and 20 6 4, deflector 2 0 6 5 is the optical axis of the uppermost compliant group with the electron robbing 2062 as the image of the second The vertical line of the surface of the piece s (the test piece surface) is a slanted setting. The ΕχΒ deflector 2066 is provided with an electrode 2661 and a magnet 2662. The secondary optical system 2071 is an optical system in which secondary electrons are emitted from the test piece S, and includes lens systems 2072 and 2073 formed of a two-stage electrostatic lens on the side of the primary optical system 2066. The detector 2080 detects secondary electrons sent to the secondary optical system 2071. The structures and functions of the respective constituent elements of the optical system 2060 and the detector 2080 are the same as those of the conventional techniques, and detailed description thereof will be omitted. The charged electron beam discharged from the electron gun 2062 is shaped by the square opening of the electron gun, and is reduced by the two-stage lens system 2063 and 2064. The optical axis is adjusted by the deflector 2065 so as to be formed on the deflection center plane of the deflection deflector 2066. 25mm square image. The electric field and the magnetic field of the £\6 deflector 2066 are orthogonal to the normal plane of the test piece. When the energy relationship between the electromagnetic field and the electron satisfies certain conditions, the electron is straight forward, and the electric field is caused by the electric field. The relationship between the magnetic field and the energy of the electrons is biased toward the pre-twisting direction. In Fig. 25, the charged electron beam of the electron gun is perpendicularly injected into the test piece S, and the secondary electron emitted from the test piece is set to the direction of the straight forward detection 82 (correction page) 312765 1288424 device 2080. The formed electron line deflected by the ExB deflector is projected to the test piece S by the lens system 2067, 2068 to 1/5. The secondary electrons with the pattern image data emitted from the test piece S are enlarged by the lens systems 2067, 2068 and 2072, 2073, and the secondary electron image is formed in the detector 2080. In the four-stage enlarged lens, the lens systems 2067 and 2068 form a symmetrical double lens, and the lens systems 2072 and 2073 also form a symmetrical double lens to form a distortion-free lens. (G) inspection process or (C) exposure process of the semiconductor device of FIG. 12 and FIG. 13 using the defect inspection device and the defect inspection method according to the third to eighth embodiments of the present invention, the light exposure device As for the exposure method, since the inspection and the road light can be performed with high precision and stability on the fine pattern, the yield of the south product can be improved, and the shipment of the defective product can be prevented. According to the electronic wire device of the third to eighth embodiments of the present invention, the following effects can be achieved. (4) According to the fourth and fifth embodiments (Fig. 2 and Fig. 21), the stage device can exhibit high-precision positioning performance in the true and the inside, and the strength of the charged electron beam irradiation position is hard to rise. That is, the charged electron beam processing of the test piece can be performed with a high-precision solid body almost without passing through the 持$ holding portion to the charged electron beam irradiation field side. From this, the vacuum of the position of the electrified electronic wire of the moon 匕 。. (C) According to the seventh embodiment (the 23rd Fn ^ and the sub-line irradiation collar (10), it is easy to get out of the gas and easily pass the electrification (4) according to the true state of the eighth embodiment, and cut into a charged electron beam irradiation room, (correction page) 312765 83 1288424 state. The pressure of each chamber constitutes the vacuum exhaust system of the intermediate chamber of the charged electron irradiation chamber and the static pressure bearing chamber in the order of low pressure. The pressure of the intermediate chamber is suppressed to be lower, and the charged electron beam irradiation chamber is The pressure change is further reduced by the interval between the other corpses, and the pressure change can be reduced to the extent of the mourning. ^ ^ ^ ^ ^ ^ ... qualitatively not asked (e) according to the fifth to seventh embodiments of the present invention, When the pressure is lowered, the pressure rises when the table is moved. 0 (f) According to the eighth embodiment (Fig. 24) of the present invention, the pressure rise of the work ΔMule can be further suppressed. (1) According to the fifth to eighth embodiments of the present invention The position of the work bench determines the performance of the high-precision and can realize the stability of the inspection device in the field of irradiation of the charged electron beam. Therefore, it can provide an inspection device with high inspection performance and flawless contamination test pieces. ~ (h) According to the fifth to eighth embodiments of the present invention, the position of the work bench determines the performance with high precision. The utility model can realize the exposed light device with the charged vacuum to the collar, and thus can provide the exposed device with high exposure precision and flawless contamination test piece. (1) According to the fifth to eighth embodiments of the invention, the position of the work station It is determined that the performance is high-precision' and the semiconductor is manufactured by a device having a stable vacuum in the field of charged electron beam irradiation, so that a fine semiconductor circuit can be formed. Next, the first embodiment of the present invention will be described with reference to FIGS. 26 to 32. Fig. 26 is a view showing a schematic configuration of a defect inspection device 3000 according to a first embodiment of the present invention. The defect inspection device 3 is a so-called photo-projection type inspection device, and includes an electronic robbing device that emits a primary electron beam. 3001, the electron beam is deflected once, the formed electrostatic lens 3〇〇2; 84 (modified page) 312765 1288424 - the formed primary electron beam is deflected at an orthogonal point of the electric field E and the magnetic field B into an approximately vertical incident semiconductor wafer An ExB deflector 3003 of 3005; a counter lens 3010 having a biased primary electron beam image on the wafer 3005; and a wafer 300 placed in a test chamber (not shown) capable of vacuum evacuation The stage of 5 can move in the horizontal plane 3004; the primary electron beam is irradiated on the wafer 3005, and the secondary electron beam and/or the reflected electron beam is projected at a predetermined magnification to form a photo projection system. An electrostatic lens 3006; the image of the wafer is used as a detector for secondary electronic image detection of the wafer 3007; and the entire device is controlled, and the defect inspection of the wafer 3005 is performed according to the secondary electronic image detected by the detector 3007. The control unit 3016. The secondary electron image includes not only secondary electrons but also scattered electrons and reflected electrons, and is referred to herein as a secondary electron image. Between the objective lens 3010 and the wafer 3005, a deflection electrode 3011 whose electric field is inclined toward the incident angle of the crystal 3005 is provided. The deflection electrode 3011 is connected to a deflection controller 3012 that controls the electric field of the deflection electrode. The deflection controller 3012 is connected to the control unit 3016, and controls the biasing of the electric * - , · poles 3 011 to generate an electric field to be commanded by the control unit 3 016. Further, the controller 3012 can constitute a voltage control device that controls the voltage supplied to the deflection electrode 3011. The detector 3007 can be formed into any configuration as long as it can convert the secondary electron image formed by the electrostatic lens 3006 into a signal that can be processed thereafter. For example, as shown in Fig. 31, the detector 3007 may include a multi channel plate 3050, a fluorescent surface 3052, a relay optical system 3054, and a plurality of imaging sensors 3056 formed of CCD elements. Complex 85 (Revision Page) 312765 1288424 - The number channel plate 3050 has a plurality of channels in the plate to allow a greater number of electrons to be generated during the passage of secondary electrons imaged by the electrostatic lens 3006. That is, the secondary electrons are amplified. The fluorescent surface 3052 is subjected to fluorescence by the amplified secondary electrons to convert the secondary electrons into light. The relay lens 3054 introduces the fluorescence into the CCD image sensor 3056, and the CCD image sensor 3056 converts the intensity distribution of the secondary electrons on the surface of the wafer 3005 into electrical signals of each component, that is, digital image data for output. The control unit 3016. The control unit 3016 can be constituted by a general personal computer or the like as shown in Fig. 26. The personal computer includes a control unit main body 3014 that performs various control and calculation processes according to a predetermined program, a CRT 3 015 that displays the processing result of the main body 3014, and an input unit 3018 that allows the operator to input a command keyboard and a mouse. Of course, the control unit 3016 can be constructed by using a hardware or a work station dedicated to the defect inspection device. The control unit main body 3014 is composed of various control boards such as a CPU, a RAM, a ROM, a hard disk drive, and a video substrate (not shown). A memory area such as a RAM or a hard disk drive is assigned a secondary electronic image memory field 3008 that memorizes the digital signal received by the detector 3007, that is, the digital image data of the secondary electronic image of the wafer 3005. Further, a hard disk drive is provided with a reference image storage unit 3013 for pre-memorizing the reference image data of the defect-free wafer. The hard disk drive stores the secondary electronic image data from the memory area 3008 in addition to the control program for controlling the entire defect inspection device, and automatically checks the defect of the defect of the wafer 3005 by predetermined arithmetic data according to the image data. Check program 3009. The details of the defect inspection program 3009 are as follows, and the reference image read by the reference image storage unit 3013 is matched with the 86 (correction page) 312765 1288424 - secondary electron line image of the actual detection to automatically check the defective portion, such as When it is judged that there is a defect, it has a function of warning display to the operator. At this time, the secondary electron image 3017 may be displayed on the display unit of the CRT 3015. Next, the action of the defect inspection apparatus 3000 of the tenth embodiment will be described by way of an example with reference to the flowcharts of Figs. 28 to 30. As shown in the main flow of Fig. 28, the wafer 3005 to be inspected is first placed on the stage 3004 (step 3300). In this case, a wafer in which a large number of wafers are accommodated by a loader (not shown) may be automatically placed on the stage. Next, the image is superimposed on the XY plane of the wafer surface to obtain the respective images of the inspected domain of the plurality of mutually displaced regions (step 3304). The above-mentioned inspected field in which the plurality of images are to be obtained is as shown in FIG. 32, which is a rectangular field indicated by symbols 3032a, 3032b, ... 3032k on the wafer inspection surface 3034, and the inspection pattern 3030 of the fields on the wafer The surroundings are partially offset from their positions. As shown in Fig. 27, in order to obtain the image 3032 of the examined area (the image to be inspected). The rectangle of the image shown in Fig. 27 is equivalent to a single element (or a block unit larger than a halogen), and the blackened grid corresponds to the image portion of the pattern on the wafer. The details of step 3304 will be described later with reference to the flowchart of Fig. 29. Next, comparing the plurality of inspected fields obtained in step 3304 with the number of reference pixels stored in the imaging data storage unit 3013 (step 3308 in FIG. 28), determining whether the plurality of inspected areas of the inspected area have a wafer inspection surface defect. In this step, the matching processing of the image data is performed, and the details thereof will be described later with reference to the flowchart of Fig. 30. 87 (amendment page) 312765 1288424 n隹日日® When the inspection surface is defective (step – the author's warning is defective (steps are sufficient. Warning method example: =: - large image 3017. This can be immediately trapped by the test piece) It is placed in a different storage location than the non-defective wafer (step 3 = 』 ^ Γ 8 &quot; tb ^ ^ &quot; J % aaa « 3005 ^ ^ 曰 ^ 3312 negative illusion 'like now the object of inspection wafer 疋If there is an unchecked area (step 33 (4). If there is still the field of the inspection (step 4), the drive station 4 moves the wafer to make the field to be inspected into the field of illumination of the electron line (steps) 3316). Thereafter, the process returns to step 3304 to repeat the same process for the other inspection field. If the field without the inspection is left behind (step 3314 negative determination), or after the defective wafer extraction process (step 3319), it is judged now In order to check whether the target's Japanese yen is 3 0 0 5, whether it is a post-agricultural wafer, it is judged whether there is any unsearched wafer in the unillustrated loader (step 3320). If it is not the last wafer Time (step 3320 negative decision) 'then checked wafer security At the predetermined containment location and placing a new unchecked wafer on the station 3004 (step 3322). Thereafter, returning to step 3304, repeat the same process for the wafer. For the final wafer (step 3320 It is determined that the inspected wafer is stored in the predetermined storage place, and all the processes are completed. Next, the processing of step 3304 will be described with reference to the flowchart of Fig. 29. First, the image number i is set to the initial value (step 3 3 3 0). The image number is shun 88 (correction page) 312765 1288424 ::: the identification number of the hard-area image of the inspection object. Secondly, the target area to be checked determines the image position (Xi, Yl) (step ~ image, It is used to delimit the field in the field to be inspected, for example, as the center position in the field. The current i = 1, and therefore the image position (Χ1, γι), that is, for example, the # The center position of the first inspection field is a. All of the inspection image position is predetermined, and is read on the hard disk of the control unit 3316 and read in step 3332. Secondly, the deflection controller 3012 pairs the deflection electrode. 3〇11 applied potential (steps in Figure 29) 3334) The primary electron beam passing through the deflecting electrode 3〇u of Fig. 26 is irradiated onto the image of the image to be inspected by the image position determined by step 3332 (to ¥1). Next, the electron beam is discharged by the electron grab 3001. The electrostatic lens 3002, the ExB deflector 3003, the objective lens 3010, and the deflecting electrode 3〇u are irradiated onto the surface of the disposed wafer 3005 (step 3336). At this time, the primary electron beam is biased by the electric field generated by the deflecting electrode 3011. The image position (Xi, Yi) irradiated on the wafer inspection surface 3034 is examined in the entire image area. When the key number i = l, the checked area is 3032a. Secondary electrons and/or reflected electrons (hereinafter referred to as "secondary electrons") are emitted from the field to be inspected by the primary electron beam. The resulting secondary electrons are then imaged at a predetermined magnification by the electrostatic lens 3006 of the enlarged projection system at detector 3007. The detector 3007 detects the secondary electrons of the junction image and converts them into electrical signals of the detection elements, i.e., digital imaging data, and outputs them (step 3338). Then, the digital image data of the detected portrait number i is transferred 89 (correction page) 312765 1288424 to the primary electronic image memory area 3008 (step 3340). Next, the portrait number i is incremented by one (step 3342), and it is judged whether or not the incremented image number (i + Ι) exceeds the predetermined value iMAX (step 3344). iMAX is the number of images to be inspected, and the example in Fig. 27 is "16". When the key number i does not exceed the predetermined value iMAX (step 3344 is negatively determined), the process returns to step 3332 to determine the image position (Xi + 1, Yi + l) for the incremental image number (i + i). The position of the image is a position at which the image position (Xi, Yi) determined by the previous processing is moved by a predetermined distance (Δχί, ΔY i) in the X direction and/or the γ direction. In the example shown in Fig. 3, the area to be inspected is moved from the (X1, γ 1) position in the Y direction (X2, Y2) to the rectangular area 3032b indicated by the broken line. The values of (AXi, Δ = i, 2, . . . iMAX) can be derived from the actual and empirical deviation of the field of view of the detector 3007 from the pattern 3030 of the wafer inspection surface 3034, and the number and area of the area being inspected is appropriate. Decide. Then, the processing of steps 3332 to 3342 repeats only a row for the iMAX checked fields. As shown in Fig. 3, the image field (Xk, Yk) after moving k times becomes the position where the inspection area 3030k partially overlaps on the inspection surface 3034 of the wafer. As described above, the 16 examined image data shown in Fig. 27 are obtained in the image memory area 3〇〇8. As shown in Fig. 27, the image 3〇32 (image to be inspected) of the plurality of inspected areas to be acquired is included in part or all of the image 3030a of the pattern 3030 on the wafer inspection surface 3034. When the incremental key number i exceeds iMAX (determined by step 3344), the process returns to the main process of step 28 (step m 3308) 〇 90 (correction page) 312765 1288424 - step 3340 The image data transferred to the memory is composed of the intensity values of the secondary electrons (so-called stone data) of each element detected by the detector 3007, but is a comparison process (step 3308 of Fig. 28) and the reference 要 to be performed in the subsequent stage. As in the case of performing the matching calculation, the state of the arithmetic processing can be accommodated in the memory area 3008. The arithmetic processing includes, for example, a normalization process in which the size and/or concentration of the image data is matched with the size and/or concentration of the reference image data, and an isolated pixel group having a predetermined number of primes or less is used as a noise. Removal of processing, etc. Further, it is not limited to the /5 data, and it is also possible to perform data compression conversion on the feature short array of the characteristics of the extracted detection pattern without reducing the detection accuracy of the high-definition pattern. The above characteristic matrix is, for example, a quadratic element formed by MxN halogen, which is divided into mxn (m) &lt;M,n &lt;N) block, the sum of the secondary electron intensity values of the halogens contained in each segment (or the normalized value of the sum value divided by the total number of primes in the entire field to be inspected) is the matrix component The mxn feature matrix. The reference image data here also represents the same memory. The image data of the tenth embodiment of the present invention refers to the /3 data, and further includes the image data of the above-described arbitrary extraction feature. Next, the processing flow of step 3308 will be described with reference to the flowchart of FIG. First, the CPU of the control unit 3016 reads the reference image data from the reference image storage unit 3013 (Fig. 26) and stores it in the working memory such as the RAM (step 3350). Reference numeral 3036 of Fig. 27 indicates the reference image. Then, the portrait number i = l is set (step 3352), and the image data of the image number i is read from the memory area 3008 on the working memory (step 3354). 〇91 (correction page) 312765 1288424 The reference image data is matched with the data of the image to calculate the distance value Di between the two (step 3356). The distance value Di indicates the degree of similarity between the reference image and the image to be inspected i, and the larger the distance value indicates the reference image, and the difference in the image to be inspected is large. The distance value Di may be any method as long as it is a similarity. For example, when the image data is formed by halogen, the secondary electron intensity (or special trace) of each element is regarded as the vector component of each position in the dimensional space, and then the reference image vector and the image i on the dimensional space are calculated. Euclid distances or phase numbers between vectors can also be used. Of course, it is also possible to calculate the distance between the city and the street. Further, when the prime number is large, since the calculation amount is large, the distance between the image data represented by the mxn feature vector can be calculated as described above. The person-determined distance value Di is smaller than a predetermined threshold value (step 3_. D is a criterion that is very consistent between the determination reference image and the image to be inspected and is experimentally determined. The predetermined threshold value Th is hour (step 3358 is definitely different). The wafer 3005 is determined to be "no defect (step 336G) and exits the subroutine when the inspection surface 3〇34 is determined. A channel and a reference image are approximately - the material is "none (four)". If it is not necessary, all the images to be inspected are matched, so that the determination can be performed at a high speed. In the example of the brother 27, the third row and the third column are known. The image to be inspected is approximately the same as the positional deviation of the base. When the distance value Di is equal to or greater than the predetermined threshold Th (step_negative judgment == code increment! (step 3362), the image of the increment is judged _ U+1)疋If the predetermined value iMAX is exceeded (step 3364). (Revision page) 312765 92 1288424 When the portrait number i does not exceed the predetermined value iMAX (step 3364 negative determination), return to step 3354 for the incremental image number (i + Ι) The same process is repeated for reading the image data. When the value is iMAX (determined affirmatively in step 3364), the wafer 3005 is judged to be "defective" on the inspection surface 3034 (step 3366), and the subprogram is left. That is, all the images to be inspected are not approximately the same as the reference image. The defect inspection device 3000 of the present invention can be used not only in the above-described photographic type electronic wire device but also in a so-called scanning type electronic wire device. Hereinafter, the eleventh embodiment will be described with reference to FIG. Fig. 33 is a schematic view showing an electron beam device 3100 according to an eleventh embodiment of the present invention, in which an electron beam discharged from an electron gun 3061 is focused by a capacitor lens 3062 at a point 3064 to form a cross over. A plurality of first open plates 3063 having a plurality of openings are provided under the capacitor lens 3062 to form a plurality of primary electron lines. The primary electron lines formed by the first plurality of open plates 3063 are reduced by the reduction lens 3065 and projected at a point 3075. After the point 3075 is in focus, the object lens 3067 is focused on the test piece 3068. The plurality of primary electron lines emitted by the first plurality of aperture plates 3063 are disposed on the reduction lens 3065 and The deflector 3080 between the object lenses 3067 is simultaneously deflected on the surface of the sample 3068. To avoid the image bending defect of the reduction lens 3065 and the object lens 3067, as shown in the upper right part of Fig. 33, the plurality of test pieces are opened. The plate 3063 has a structure in which a small opening is formed in the circumference and the projection in the X direction is equally spaced. The primary electron beam of the plurality of focusing is a point 93 (correction page) 312765 1288424 irradiated on the test piece 3068, a number of points, The secondary electron beam emitted from the plurality of points irradiated is formed into a thin line by the electric field of the objective lens 3067, and is deflected by the helium separator β 3066 to enter the secondary optical system. The secondary electron image is focused closer to the object than point 3075, point 3076 of lens 3067. The reason is that the test piece has more than 500 eV of energy for the primary electron beam, while the secondary electron line has only a few eV of energy. The secondary optics has enlarged lenses 3069 and 3070, and expands the plurality of openings of the second plurality of aperture plates 3071 by expanding the secondary electron beam junctions of the lenses 3069 and 3070. It is then detected by a plurality of detectors 3072 through the openings. As shown in the upper right portion of Fig. 33, the plurality of openings formed in the second plurality of aperture plates 3071 provided before the detector 3072 are in a one-to-one correspondence with the plurality of openings formed in the first number of aperture plates 3063. Each detector 3072 converts the detected secondary electrode line into an electrical signal indicative of its intensity. The electric signals outputted from the respective detectors are amplified by the amplifiers 3 0 7 3 and input to the imaging processing unit 3074 to be converted into imaging data. Since the imaging processing unit 3074 is supplied with the scanning signal for deflecting the primary electron beam from the deflector 3080, the imaging processing unit 3074 can display the image of the surface of the test piece 3068. This image corresponds to the position described in the first embodiment. Different plurals are checked for one of the images in the image (Fig. 27). The defect of the test piece 3 0 6 8 can be checked by comparing the image with the reference image 3 0 3 6 . Further, the image is superimposed so that the evaluated pattern on the test piece 3068 moves closer to the optical axis of the primary optical system, and the line scan is performed to take out the line evaluation signal, and the pattern line on the test piece 3068 can be measured by appropriately correcting the line. It is preferable to focus on the surface of the test piece 3068 by the primary electron beam passing through the first plurality of aperture plates 3063, and the secondary electron beam junction discharged from the test piece 3068 is on the detector 94 (correction page) 312765 1288424 .3072. The distortion caused by the primary optical system and the secondary optical system is minimized by the three-dimensional difference between the image curvature and the field of view. For the relationship between the interval of the plurality of primary electron lines and the secondary optical system, if the interval between the primary electron lines is set to be larger than the difference between the secondary optical systems, the crosstalk between the complex electronic lines can be eliminated. The scanning type electronic wire unit 31 of Fig. 33 also inspects the test piece 3〇68 according to the machine drawings of Figs. 28 and 29. The image position (h, γι) of the step 3332 in this figure is the center position of the binary image corresponding to the line image of the composite number obtained by scanning the complex electron lines. The image bit position (XWO is sequentially changed in the subsequent process, but is performed, for example, by the offset (0ff set) voltage of the change deflector 3080. The deflector 3〇8〇 varies the voltage around the biased electric waste to perform the normal operation. Line scanning. Of course, a biasing means different from the deflector 3080 is provided to change the imaging position (Xi, Y). The apparatus of the above embodiments of the first and eleventh embodiments can be applied to the semiconductor device of the 12th and 13th embodiments. Wafer evaluation processing in the manufacturing process. The flowcharts in Fig. a and Fig. 13 include a wafer manufacturing process for manufacturing a wafer (or preparation of a wafer), and fabrication of a mask for covering the exposed area. A film manufacturing process (or a mask preparation process for preparing a mask), a wafer processing process for performing a necessary processing on a wafer, a wafer in which a wafer formed on a wafer is cut out to be operable, and assembly The I sequence and the wafer inspection process for inspecting the assembled wafer. The wafer processing process for the process of determining the performance of the semiconductor device in the above process. The process designing the circuit pattern on the surface of the wafer Forming more The wafer is processed as a memory and a wafer. The wafer processing ς (amendment page) 312765 95 1288424 includes the following steps: 1 forming a dielectric thin film and wiring portion as an insulator, or forming a metal thin film as an electrode portion Thin film formation process (by CVD, spray coating, etc.) 2 Oxidation oxidation process of the formed thin film layer and wafer substrate is used for the processing of the film thickness and the wafer substrate to be used for reticle The photo-engraving step 4 of forming a pattern of a resist film is carried out by applying a Kasuga process to the film layer and the substrate by using an anti-lan® shape (for example, using a dry-spinning process). 5 Ions • Impurity injection and diffusion process 6 Anti-surname film peeling process (7) Inspection process for inspecting processed wafers The wafer processing step is a semiconductor device that is repeatedly performed in accordance with the number of layers required. Figure 13 shows the photolithography process at the center of the wafer processing step. The following steps are included: ::: Section: Coating on a wafer with a circuit pattern, coating the anti-rice film coating step 2 Exposing the resist film to the exposed light process 3 Exposing the light The resist film is subjected to development to obtain a semiconductor device manufacturing process, wafer processing, and the like in the toughening process of the image forming process in which the pattern of the image is stabilized by the image forming process 4 of the image of the film (4). In the process, the image forming process can be applied to a known technique. ..., 缺 P P = Inspection process When the defect inspection device 3000 according to each of the above-described embodiments of the present invention is used, the conductor device having a fine image port (correction page) 312765 96 1288424 It is possible to check defects with high precision without the image of the secondary electronic image, so that the yield of the product can be improved and the shipment of the defective product can be prevented. - The month is not limited to the above-mentioned example. For example, the test piece to be inspected is a semiconductor wafer 3〇〇5 =: However, the test piece of the present invention is not limited thereto, and any defect can be selected arbitrarily. product. For example, a mask having a pattern for wafer exposure may be formed as an inspection object. Further, the present invention can be applied not only to a device using a charged particle line inspection other than electrons, but also to a device for obtaining a # image capable of performing a defect inspection of a test piece. Further, the deflecting electrode 3011 can be set at any position as long as it can be changed between the objective lens and the squid wafer cassette 5, as in the ExB bias __ and the objective lens 3 (four). 2 grab between Wei and ExB deflector _3. Can also be controlled by

The generated electromagnetic field controls its direction of deflection. That is, (4) the function of deflecting the mouth such as 03 and using the deflecting electrode 3〇11. ▲ In the above-mentioned 10th and uth embodiments, the image data are compared with each other, and the % ′ is used for matching between the elements and the matching between the feature vectors, but the two can be used together. For example, the matching is performed at the second speed with the feature of the small amount of calculation, and the result is that the high-speed '/, horse precision can be achieved for the two-stage matching of the fine-grained data. In the tenth and eleventh embodiments of the present invention, the position of the image to be inspected is only offset by the position of the field of illumination of the primary electron beam, but may also be 97, (correction page) 312765 1288424: before the matching process or The process of searching for the most suitable matching field in the image data (for example, the fields in which the correlation coefficient is detected to match each other) is combined with the present invention. In this way, the large positional deviation of the image to be inspected can be offset by the position of the electron beam irradiation field of the present invention, and the relatively small position is deviated from the digital image processing of the slave after the month b, so that the accuracy of the defect inspection can be improved. Further, the electronic line device for defect inspection has a configuration of a %th view and a 33rd view, but the electro-optical system can be arbitrarily changed as appropriate. For example, the electron beam irradiation means (3〇〇1, 3〇〇2, 3〇〇3) of the defect inspection apparatus shown in Fig. 100 is a form in which the surface of the wafer 3005 is incident on the surface of the wafer 3005 vertically upward, but The ExB deflector 3003 may be omitted so that the primary electron beam may be incident obliquely from the surface of the wafer 3〇〇5. The flowchart of Fig. 28 is not limited to this. For example, in step 3312, for the defective test piece, the defect inspection in other fields is not performed, but the defect inspection may be performed in the entire field. Further, if the field of irradiation of the electron beam is enlarged once and all the inspection areas are substantially illuminated by one irradiation, step 3314 and step 3316 can be omitted. As described above, according to the first aspect of the present invention and the defect_inspection device of the n-th embodiment, the upper portion of the test piece is overlapped to obtain the respective images of the inspection target field in which the plurality of mutually deformed regions are mutually displaced. Since the image of the inspection target and the reference image are used to check the defects of the test piece, there is an excellent effect of preventing the deterioration of the defect inspection accuracy by the positional deviation of the inspection image and the reference image. Further, according to the apparatus manufacturing method of the first and second embodiments of the present invention, (amendment page) 312765 98 1288424, the defect inspection of the test piece is applied by using the above defect inspection device, so that the yield of the product can be improved and the defect can be obtained. The excellent effect of the shipment of products. Figure 34 is a view showing the arrangement of an electronic wire device 4000 according to a twelfth embodiment of the present invention. The electron beam device 4000 includes an electron gun 4001 that irradiates a test piece τ with a primary electron beam, and a secondary electron detector 4011 that detects a secondary electron beam emitted from the test piece τ. 4020 in Fig. 34 is an axisymmetric electrode. The electron beam discharged from the electron gun 4001 is focused by the capacitor lens 4002 to form an overlap in the opening 4004 which determines the NA (numerical aperture). An aperture plate 4003 is provided below the capacitor lens 4002. The aperture plate is provided with eight openings 4〇14 as shown in Fig. 35A. The opening 4〇14 is formed by the small lens 4005 on the deflecting main surface of the ExB separator 4006, and is further projected onto the test piece surface τ by the objective lens 4007 to form a primary electron beam irradiation point (Fig. 36). The secondary electrons emitted by each of the first irradiation spots of the test piece are deflected by the ExB separator 4006 to the right of Fig. 34, and enlarged by the secondary optical system 4009, and the image is formed in the detector hole group 4〇1〇. The test piece τ is placed on a moving port (not shown) to move in a direction perpendicular to the plane of the paper of Fig. 34 (Υ direction). As shown in Fig. 35, the openings of the opening plates 4〇〇3 are arranged in three rows and three columns, but the opening 4014 is preferably set in a predetermined diameter in which the electron luminance (electron density) of the electrons is released is greater than a certain degree of privacy. In the example of the figure, the third line - 歹J - is not sighed. Further, the openings of the second row and the third row are 1/3 of the interval D1 between the rows shifted to the right in the first row and the second row. Further, the interval I (10) between the four passes is such that the interval of the primary electron beam at the = shot E of the test piece is sufficiently separated. The purpose is to make the detection of the secondary optics "good" with a large opening angle so that the difference is large, and to prevent (correction page) 312765 99 1288424 • the secondary electron image on the detector hole group 4010 causes crosstalk between the respective electron lines 35C and 35C each show a plan view of the opening plates 4050 and 4060 having openings on the circumference. The projection points on the X-axis of the openings 4051, 4052, ... of the opening plate 4050 of Fig. 35B are equal. The projection point on the X-axis of the opening 4061, 4062, ... of the opening plate 4060 of the same 35C is the equal interval Lx. The electron beam device 4000 of the embodiment of the present invention shoots the second element on the surface of the test piece. The primary electron beam is formed in a state in which the maximum value of the distance between the adjacent primary electron beams is the smallest. The distances 50a, 50b, 50e, and 50f between the adjacent two openings of the opening plate 4050 of Fig. 35B are 47 mm and 63 mm, respectively. 63 mm, 41 mm, and the distances 60a, 60b, and 60f between the adjacent openings of the opening plate 4060 of Fig. 35C are 56 mm, 57 mm, and 41 mm, respectively. When the two opening plates are compared, the adjacent primary wires of the opening plate 4060 are mutually Distance The maximum value is 57 mm, which is smaller than 50b (63 mm) of the opening plate 4050. Therefore, the opening configuration of the opening plate 4060 of Fig. 35C is appropriate. The advantage of using the opening plate having the above conditions is: the actual adjacent primary electron line The spacing is approximately equal to make the symmetry good, and the non-point congruence is not easy to occur. Since the primary electron lines are separated from each other, the blur of the first electron beam by the space charge effect becomes small, and the symmetry of the position on the test piece can be moderated. The influence of the charging of the test piece, etc. The primary electron beam is separated into a plurality of electronic wires by the small opening 4014, and is imaged by the reducing lens 4005 on the deflecting main surface of the ExB separator 4006, and then projected by the objective lens 4007. The surface T, as shown in Fig. 36, 100 (correction page) 312765 1288424 - forms the secondary electron beam irradiation point e. The secondary electrons emitted from the respective irradiation points E of the tf object surface T are applied to the lens torn and tested. Acceleration/bundling of the electric field between the surface T, and then by the Εχβ separator between the objective lens 4007 and the electron-collision lens: to the right of the 34th figure, via the lens side of the secondary optics Image The detection of the opening π of the complex number (4) is on the side of the mouth plate, and then detected by the -two-person electronic detector 4GU. The test piece τ 4 is placed on the workbench (not shown): ^)) moving the test piece to move the test piece The interval D1 and D2 between the small vertical openings 4014 of the %th drawing surface are set to be sufficiently separated by the interval of the first electron beam irradiation point on the test piece. When the interval between the irradiation points is not fixed, the minimum is The interval will be a problem, so it is necessary to do the separation as much as possible. In order to improve the detection efficiency of the secondary optical system, the opening angle is large and the difference is large. The secondary electron image on the side of the detecting opening plate has a possibility of crosstalk between the secondary electron lines and must be prevented. The deflectors 4〇12 and 4〇13 for scanning the electron beam are configured such that the irradiation point of the primary electron beam on the test piece τ is scanned in the left-to-right direction of the 36th figure, and the scanning distance S is set. It is set to about l/3 (S=H/3 cut) after the irradiation point. After moving the test piece T'y direction to the length of the area to be detected, the stepping movement of the table in the X direction is performed even after the test piece is moved in the direction of the ,. The direction is continuously moved to perform raster scan (scanning 4 in the x direction). By repeating, all the fields in the field of inspection should be obtained. (^1) 312765 101 1288424: When the electronic line device is inspected on the test piece surface T, the mobile work station 4〇13 is as described above, and the transmission time is one and two.间 描 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 401 Continued 1/3) The magnitude of the cut, in the width of m_() (=4〇〇一), according to the length of the test piece moving in the y direction of the test piece surface, the moving work station is: The X direction moves 4 〇 Mm, and the scan is performed by the y-direction reversal movement in the same manner as described above. The above-mentioned result and the image of the predetermined graphic data are likely to be examined. j: imaginary acne, and, smell A 丨 』 only light cloth —, processing speed is not taken as an example of 8 signals into the channel, and in addition to the return time for continuous inspection, so than the conventional technology can be greater = still speed. About its number of reentry, Lai When the inspection area of the surface (X direction width) is 20〇mm, 200mm/〇. 4 brewing = 5〇〇 times, each folding back needs 0.^ seconds, then check - The total number of test pieces * is not much less than 4 minutes. The width of the scanning deflectors 4012, 4013 can be 8 poles (〇Ctapole) so that they can be scanned in the y direction. The direction of the deviation of the blood electrons is on the position of the image (4), and the solid direction is scanned. When the pattern width in the X direction is measured, the position of the table and the direction of the y are biased so that the pair of electrons are measured. The scanning can be performed in the same manner as the conventional method. When the matching accuracy is measured, the pattern that can be evaluated for the matching accuracy can be performed. The same scanning as the line width measurement can be performed. The twelfth embodiment (Fig. 34) There is an electronic ray grab 4 〇〇 1 electronic (correction page) 312765 102 1288424 line illumination system as an example, but can be set with a plurality of electron guns and each corresponding open plate and secondary electron detector formed by the complex electronic illumination system According to the above example, the workpieces are adjacent to each other in the X direction, and the movement of the test piece in the y direction of the f-times can check the composition of the amplitude of 400 #mx (the number of electron beam irradiation systems). According to the present invention, the twelfth embodiment ( Figure 34), due to use The number of electronic wires contains the state of the scanning frame (&quot;web), and the test piece is continuously moved at a right angle in the direction of the scanning frame, so that the full scanning time of the test piece surface can be greatly shortened. Moreover, since the scanning electron width of each electronic wire is narrowed by using a plurality of electronic wires, the color difference can be suppressed to make the shooting point E of the four faces smaller, and the electron wires can be sufficiently separated from each other. The crosstalk of the secondary optical system can be suppressed. In this embodiment, in order to continuously move the test piece, the test piece of the comparative test piece is scanned in a static state in a static state, and then the test piece is moved and then scanned by other micro-provincial electronic line devices. Can greatly reduce the time required to move the test piece. In addition, by setting the electronic number of the complex number, a plurality of electronic lines (4) can be set to perform more efficient defect inspection. ,

According to the twelfth embodiment (the 34th) of the present invention, since the plurality of times: the irradiation point of the sub-line is a two-element arrangement, the distance between the irradiations can be increased. Further, the distance between the irradiation points of the projection on the 1-axis (x-axis) is uniformly applied, and the surface of the test piece can be scanned without any (4). Further, since ExB: ☆ is used, the human electron beam is directed perpendicularly, so that the electronic wire can be twisted into fine green. Fig. 37 is a schematic view showing the first configuration of the present invention. In the 37th embodiment, the electronic wire device 41〇〇' 4101 of the embodiment is a release inspection electron beam (correction page) 312765 103 1288424 - an integrated single electron gun, 4103 is a capacitor lens, and 4105 is a lens for passing through the electric oven The electron beam forms a plurality of open plates of a plurality of electron lines, and 4107 is an NA opening plate provided at an enlarged image position of the electron beam source formed by the capacitor lens, and 41〇9 and 4111 are plural electron lines formed for the plurality of open plates. After the predetermined reduction ratio is reduced, the lens is imaged on the specimen Οa of the inspection object, and 4115 is an ExB separator that separates the secondary electrons passing through the lens from the primary electron. The cathode of one of the bodies is formed by subjecting the tip end of the cathode material such as single crystal LaBb to various shapes.

The ExB separator 4115 has a structure in which an electric field and a magnetic field are orthogonal to a plane perpendicular to the normal to the surface of the test piece (upward direction of the paper surface), and the relationship between the electric field, the magnetic field, and the primary electron energy is set so that the primary electrons advance. 4117 is a polarizer in which the plurality of electron lines formed by the plurality of aperture plates 410 5 are simultaneously deflected to scan the test piece 4113, and 4119 is an enlarged lens of the secondary optical system, and the 4121 is synchronized with the deflector 4117 of the primary optical system. Regardless of the scanning of the shouting member, the secondary electrons of the opening of the electronic wires of the openings 4105a, 4105b, 4105c, and 4105d of the plurality of opening plates 4105 are discharged, and the secondary electrons corresponding to the 4th Huan/Ziyi's biased person's 412 3 are provided with corresponding The plurality of aperture plates 4125 of the secondary optical system of the openings 4123a, 4123b, 4123c, and 4123d of the plurality of aperture plates of the primary optical system are detector groups disposed behind the plurality of aperture plates. The detection benefit group is composed of an electron multiplier tube which generates a detection signal for the amount of electrons to be injected. In the electronic wire device 4100 of Fig. 37, the electron beam emitted from the electron gun 4101 is contracted by the capacitor lens 4103, and then irradiated to the plurality of openings 4105a to 4105d of the opening plate 4105 forming the plurality of electron lines. The electron lines passing through the respective openings (correction pages) 312765 104 1288424 4105a, 4105b, 4105c, 4105d overlap the opening positions of the opening plates 4107 which determine the position of the primary optical coefficient. An overlapping image is formed on the principal surface of the objective lens 4111 by the capacitor lens 4109 by the overlapping electron lines. ΝΑ is the abbreviation of Numerical Aperture. The opening of each opening of the plurality of aperture plates 4105 is imaged on the surface of the test piece 4113 by the objective lens 4111 after being imaged by the capacitor lens 4109 on the main surface of the ExB separator 4115. On the one hand, the secondary electrons emitted from the test piece are biased toward the secondary optical system from the primary electron separation by the helium separator 4115, and are enlarged by the enlarged lens 4119 of the secondary optical system via the opening of the plurality of open plates 4123. A detector group 4125 behind the aperture plate is detected. Since the current density of the electron beam discharged from the electron grab 4101 is the largest at the center opening 41 〇 5d of the plurality of open plates 4105, 41 〇 5c, 4105b, 4105a, etc. are decreased as they leave the optical axis, so the test piece 4113 surface The electron line current is different. In order to solve the above problem, in one embodiment, the sizes of the openings 4105a to 4105d of the plurality of opening plates 4105 are formed to be smaller in the vicinity of the optical axis, and gradually increased as they leave the optical axis, so that the surface of the test piece 4113 is passed through each opening. The electron line currents are approximately equal. Therefore, a detector group for detecting each of the electron beam currents is provided on the surface of the test piece 4113 to detect the current of each of the electron lines. Another method for solving the above problem is to set the optical axis direction position on the side of the aperture plate on the digital aperture of the primary optical system to the Gaussian image of the enlarged image of the electron source from the lens of the primary photon system. The image plane (the focus position of the near-optical axis) is close to the position of the electronic grab 4101. That is, the electric (correction page) 312765 105 1288424 The overlapping position formed by the container lens 4103 is such that the overlapping position (the optical axis direction position) of the electron lines passing through the respective openings of the plurality of opening plates 4105 differs depending on the electron line due to the spherical aberration of the lens. For example, the overlapping position formed by the electron lines of the opening 41〇5a is the position of 4108a, and the position of the parent by the electron line of the opening 4105c is 4108c. That is, the Gauss image surface of the electron source formed by the lens of the primary optical system is formed farthest from the NA opening plate 41 〇7. Therefore, the NA opening plate is placed closer to the electron gun 41〇1 side than the Gauss image surface and placed at the overlapping position formed by the outermost opening 41 〇 5a of the plurality of opening plates 41 〇 5, whereby the opening position through the opening 41 is used. The electron current density of 7 is large, and the passage of the electron beam is not limited. On the one hand, the current density of the electron beam passing through the opening 4105c near the optical axis is low, and the throughput of the electron beam is limited again, so that it can be reduced to the test piece 4113. The brightness is the unevenness of the electron line current. Also in the same manner as in the above embodiment, the detector group for detecting the current of each electron beam is placed at the position of the test piece surface to detect the electric current flowing through each opening. Further, the above problem can be solved by the above-described adjustment of the opening size of the plurality of opening plates 4105 and the adjustment of the position of the NA opening plates 41?7 in the optical axis direction. The upper j method is such that the electron current flowing into the test piece 4113 is uniform. The secondary electron detection rate of the secondary optical system is different between the optical axis attachment and the periphery of the optical axis. Therefore, in another embodiment of the present invention, the non-graph H-shaped member is placed at the test piece position to detect the secondary electrons emitted by the non-graphic test piece by the detector group 5, and then adjust the optical axis of the na-opening plate 4107. The directional position is such that the difference between the outputs of the respective detectors is minimized, thereby (correction page) 312765 106 1288424 - repairable, unevenness of the detection rate of the secondary electrons of the secondary optics. The reduction ratio from the opening to the ° is M, and the Z-direction distance of the image plane of the optical system is :,, and the deviation of the aperture plate is 5/(2M), usually up to (10) m. - for the unevenness of the secondary electron detection rate of the secondary optical system, the test piece can be placed at the position of the test piece in the same manner as described above, and the detector group 4125 detects the secondary electron of the unpatterned test piece surface. The opening size of the plurality of openings 4105 of the primary optical system is adjusted to be smaller in the vicinity of the optical axis, and a larger correction is performed as the optical axis is removed to minimize the output difference of each detector. Further, for the unevenness of the secondary electron detection rate of the secondary optical system, the non-graphic test piece may be placed on the test piece position as described above, and the detector group 4125 is used to detect the second release of the non-W-shaped test piece. The opening of the plurality of aperture plates 4123 of the electrons, (4) suspended secondary optical system is such that it is small in the vicinity of the optical axis, and a large correction is formed as it leaves the optical axis. The above problem can be solved by adjusting the opening rule of the plurality of opening plates 41〇5, adjusting the optical axis direction of the NA opening plate 4107, and adjusting the opening size of the plurality of opening plates 4123 of the secondary optical system. In this case, an adjustment method such as a control and calculation method (not shown) is used to minimize the difference in output between the detectors 4125. The thirteenth embodiment shown in Fig. 37 was carried out by using the respective electron beams to evaluate that all the electron lines were simultaneously deflected by the bias 4117, and the test piece 4113 was scanned with all the electron lines, and the signal was detected by the detector. Further, in the case of scanning with an electron beam, the secondary electrons at the incident point of each electron beam are in a state of being surely incident on the hole of the corresponding plurality of aperture plates 4123 and synchronized with the scanning of the deflector 4117 (correction page) 312765 107 1288424: The deflector 4 1 2 1 causes the secondary electron to be scanned. With respect to the wafer inspection process shown in the flowchart of Fig. 12, the electronic wire device 41 of the thirteenth embodiment of the present invention can be used for inspection and measurement with higher precision and higher productivity. The electronic wire device 4100 according to the thirteenth embodiment of the present invention can be applied to various inspections such as photographic masks, defect inspections for reticle, wafers, and the like (test pieces), line width measurement, matching precision measurement, potential contrast measurement, and the like. Determination. According to the electronic wire device 4100 of the thirteenth embodiment of the present invention, since a plurality of electron beams are formed using an integrated cathode or a single electron gun, the use of a plurality of emitters can significantly improve the failure rate of the electron gun, thereby improving the device's dependence. Further, since the current of each electron beam can be made uniform, inspection and measurement with higher surface accuracy and high productivity can be performed. The electron beam device 4100 of the thirteenth embodiment can also use an electron gun that emits electrons only in a narrow direction, such as a hot electric field discharge electron gun. In the electron beam device 410 0 of the thirteenth embodiment, since the current of each electron beam can be made uniform, the number of electron lines of the complex electron beam can be increased, and the complex electron beam can be irradiated to a wider range. Therefore, high productivity inspection and measurement can be performed. The signal strength between the wires can be made roughly equal. The electronic line device 4200 of the fourteenth embodiment of the present invention will be described with reference to Figs. The electron beam discharged from the electron gun 4201 of the electronic wire device 4200 of Fig. 38 is bundled by the capacitor lens 4202 to form a cross at a point c, and a retracting portion 4204 having an opening 4204 for determining NA is disposed at the overlapping point CO. Below the capacitor lens 4 2 0 2, a first (correction page) 312765 108 1288424 number of aperture plates 4 2 〇 3 having a plurality of openings are provided, and a number of primary electron lines are formed by the pot. The long-formed 开口 孚 孚 取 取 由 各 各 各 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 420 After the point 4216 is tied, the object lens 4207 is focused on the test piece 42〇8. As shown in Fig. 38, in order to correct the back surface curvature of the reduction lens 4205 and the object lens 4207, the plurality of aperture plates 42A3 are formed from the center to the periphery to form a phase away from the grid lens 42〇2. . The secondary electron beam discharged from the plurality of points on the test piece 4208 irradiated by the plurality of focused primary electron beams is attracted by the electric field of the object lens 42〇7 to be bundled into a thin line at a point 4216 before the ExB separator 4206, that is, to ExB. The deflecting main face of the separator 4206 is focused at a point 4216 on the test piece side. The reason is that each electron beam has 5 〇〇 eV energy on the surface of the test piece, while the secondary electron line has only a few eV energy. The plurality of secondary electron beams discharged from the test pieces 42 to 8 are separated from the axial direction of the test electron gun 4201 and the test piece 4208 by the ExB separation benefit 4206, and are separated from the primary electron beam and injected into the secondary optical system. The secondary optics includes enlarged lenses 4209 and 4210, and the secondary electron lines passing through the enlarged lenses 4209 and 4210 pass through a plurality of openings of the second plurality of aperture plates 4211 to form a plurality of detectors 4212. The plurality of openings formed in the second opening plate 4211 of the second detecting opening 4212 are formed in a one-to-one correspondence with the plurality of openings formed in the first plurality of opening plates 4203. Each detector 4212 converts the detected secondary electron line into an electrical signal indicative of its intensity. The electric signal outputted from the detector as described above is amplified by the amplifier 4213 and input to the imaging processing unit 4214 to be converted into imaging data. The image data is tested for defects and line widths. That is, the image processing unit (correction page) 312765 109 1288424 4214 is supplied with the scanning signal for deflecting the primary electron beam, so that the imaging processing unit 4214 can display the image of the surface of the test piece 4208. Comparing the artifact with the standard pattern can check the defects of the test piece 42〇8, and the image overlaps the sample 4208 closer to the optical axis of the optical system to perform line scan to take out the line evaluation signal, and implement the appropriate The line width of the graphic on the test piece 4208 can be determined by calibration. The primary electron beam passing through the opening of the first complex opening plate 4203 is focused on the surface of the test piece 4208, and the secondary electron beam is discharged from the test piece 42〇8. In the case of the detector 4212, it is particularly necessary to consider The effects of distortion, image plane curvature, and field of view non-point distortion produced by one optical system and one-person photonic system are minimal. The means employed in the fourteenth embodiment of the present invention will be described below with reference to Figs. 39 to 41. In Figs. 39 to 41, the size, shape, and offset of the opening formed by the first plurality of apertured plates 4203 and the second:numbered apertured plates 4211 are such that the ease of understanding is somewhat different from the actual state. The plate 42== shows the first plural opening of the electronic wire device of the present invention. The plurality of opening plates 4203 of this example are used for the test piece surface==(r:ushl_, one 彳 is different from the first plural opening plate 4203 Forming a position offset into a plug

Heart 7 Ρ 乂 The first number of the opening plate 4203 is the center of the Y robbing 4201 and the test piece 42 〇 8 * p at the intersection of the center of the square and the second =1 hard number opening plate _ 4224. Each of the four corners is provided with an opening coffee to the vertical and horizontal lines on the third drawing. The opposite sides of the square are false (correction page) 312765 110 1288424 • The opening of the plural line is evenly distributed on the first plurality of opening plates. 4203 is the intersection of these solid lines. In fact, the distortion of the optical system is corrected to the minimum. The position of each opening depends on the distance from the center point = = the distance from the intersection of the solid line to the center of the first plurality of aperture plates 4 2 〇 3 The location of the move. Fig. 40 is a view showing an example of the second plurality of opening plates 4211 used in the electronic wire device of the present invention, which minimizes the influence of the distortion of the winding type of the secondary optical system. Fig. 4 is a view showing that the distance from the opening of the second plurality of opening plates 4211 to the center γ is shifted outward by the ideal position of the uniform distribution. The offset is simulated by the optical system including the objective lens 4207, the enlarged lenses 4209 and 4210, and the ExB separator 4206. The opening on the outside is too large to form a crosstalk y so that a sufficiently large opening can be formed. Figs. 39 and 40 show an embodiment in which the plurality of opening plates 4203 and 4211 are openings in which a plurality of openings are formed in one plate. However, in the device design, the plurality of opening plates may be composed of two or more plural pieces. As described above, the cross-sectional shape of the first plurality of opening plates 42A3 can be formed in a step shape for the curvature of field to correct the curvature of field of the primary optical system. The second-order optical system also exhibits image plane curvature. However, since the opening of the second plurality of aperture plates 4211 provided in front of the detector 4212 is large, the curvature of field of the secondary optical system can be virtually ignored. The field of view non-dot is caused by the difference in the refractive index of the lens in the radial direction of the lens and the circumferential direction. Figs. 41A and 41B are diagrams showing a second example of the second plurality of aperture plates 42〇3 used for mitigating the field of view non-point difference, and the first plurality of aperture plates 4203 shown in Fig. 41A (Fig. 41A and 41B). Correction page) 312765 111 1288424 Each opening is formed in a shape elongated from the center of the first plurality of opening plates 42〇3, and has a shape elongated in the radial direction. The 41st-figure diagram shows openings having different sizes in the radial direction and the circumferential direction of the virtual figure centered on the center of the first jade opening plate 4203. The payout number 4217 of the younger figure 38 indicates a blanking deflector, and a narrow pulse is applied to the blanking deflector 4217 to form an electron beam having a narrow pulse width. By using the above-described narrow pulse, the pattern potential formed on the test piece 42A can be decomposed at a high time to perform measurement, whereby the function of the strobo SEM (scanning electron microscope) can be added to the electron beam device. Reference numeral 4218 of Fig. 38 denotes an axisymmetric electrode, and a potential of several tens of volts lower than that of the test piece 4208 is applied to the axisymmetric electrode 4128, so that the secondary electrons emitted from the test piece 4208 are dependent on the potential of the pattern of the test piece 4208. This allows secondary electrons to flow toward the counter lens 42〇7 or to recover the test piece side. From this, the potential contrast on the test piece 4208 can be determined. 38 to 40 show an electronic wire device 420 according to a fourteenth embodiment of the present invention, which is applied to a defect inspection device, a wire width measuring device, a matching precision measuring device, a potential contrast measuring device, and a defect evaluation device or frequency. Flash SEM device. The electron beam device 42 of the fourteenth embodiment of the present invention can be used for the evaluation of the crystal of the manufacturing process of the semiconductor device shown in Figs. 12 and 13 . The photolithography process in the center of the wafer processing step of Fig. 12 includes a step of applying a resist film on a wafer on which a circuit pattern is formed in the previous step, a step of exposing the resist film, and exposing the light. The resist film is subjected to development to obtain a resist pattern of the resist pattern, and the resist pattern of the image (corrected page) 312765 112 1288424 is used for the simplification process (the line sling 4200 is more usable and subtracted:丄Electronics 14th Example of Wafer for Inspecting Processed Wafers The invention is not limited to the above embodiments. For example, a plurality of electrons = gamma, a plurality of open-plate tears, and one-time optics can be provided. Department, secondary optical season, ^ number of turns: plate 4211 and detector 4212 consisting of electron beam irradiation · = 'use the Wei electronic to grab the plural - secondary electron line simultaneously irradiated at -42G1 different positions, with The plurality of detectors can also receive a plurality of secondary electron beams discharged from the test piece, thereby greatly shortening the time required for inspection and measurement. As can be understood from the above description, the electronic wire device 4200 of the fourteenth embodiment of the present invention can be understood. The following effects can be achieved. This corrects the distortion of the optical system once, and can alleviate the non-point of the field of view. Therefore, it can scan a large number of electron beams that are irradiated in a wide range of fields, and can perform defect inspection with high productivity. Distortion, scanning the test piece with a small number of electronic wires at a narrow interval does not cause crosstalk, and can increase the transmittance of the secondary electrons. As a result, a signal with a high S/N ratio can be obtained, and high reliability can be implemented. Measure the line width, etc. 3. Since the primary optical image can be imaged on the main surface of the ΕχΒ separator 4206, the color difference of the primary electron beam can be reduced, and the complex electrons can be formed when the primary electron beam is formed into a plurality of electron lines. The electronic wire is twisted into a thin wire. The electronic wire device 4300 according to the fifteenth embodiment of the present invention will be described with reference to Fig. 42. The electronic wire device 43A of Fig. 42 includes a primary optical system 113 (correction page) 312765 1288424 _ 4310, twice. The optical system 4330 and the detecting device 4340. The primary optical system 4310 is an optical system for irradiating an electron beam on the surface (test piece surface) of the test piece S, and includes an electron gun 4311 for discharging an electron beam, and an electric gun for discharging the electron gun. The electrostatic lens 3112 of the sub-line biasing, the opening plate 4313 forming the plurality of small holes (but only 4313a to 4313e in FIG. 42), the electrostatic deflector 4314, the aperture 4315, and the through-opening plate The electrostatic intermediate lens 4316, the first ExB separator 4317, the electrostatic intermediate lens 4318 that deflects the electron beam, the electrostatic deflector 4319, the second E xB separator 4320, the electrostatic object lens 4321, and the electrostatic deflector 4322. As shown in Fig. 42, the optical axis A of the electron beam for discharging the electron gun with the electron gun 4311 as the uppermost portion is set to be perpendicular to the surface SF of the test piece. Thereby, the structure of the electrostatic objective lens 4321 and the test piece S is axisymmetric, and the electronic wire can be twisted into a thin line. The secondary optical system 4330 includes an electrostatic expansion lens 4331 that is disposed along the optical axis B that is inclined toward the optical axis A in the vicinity of the second Ex B separator 4320 of the primary optical system 4310, and a small number of plurals in which the second element is arranged. The aperture plate 4332 of the hole (only 4332a to 4332e is shown in the figure). The detecting device 4340 is provided with a detector 4341 for each opening of the opening plate 4332. The number of openings (4332a to 4332e) of the opening plate 4332 and the number and arrangement of the small holes (4313a to 4313e) corresponding to the opening plate 4313 of the primary optical system are arranged. Each of the above-described constituent elements can be a known technique, and the description thereof is omitted here. Next, the operation of the electronic wire device 4300 having the above configuration will be described. The electron beam C discharged from the single electron gun 4311 is converged by the electrostatic lens 4312 and irradiated on the opening plate 4313. The electron line C forms a plurality of electron lines through a plurality of small 114 (correction page) 312765 1288424 - holes (4313a to 4323e) on the opening plate 4313. The plurality of electronic wires form an overlap C1 in an opening ring 4315 provided with an opening plate. The overlapping electron beams are applied to the test piece S, and are passed through the electrostatic intermediate lens 4316 and the electrostatic intermediate lens 4318 which are disposed on the way, and the image is formed on the main surface of the electrostatic objective lens 4321 to satisfy the Keller illumination condition. On the one hand, the electron beam D forming the image of each of the apertures of the apertured plate 4313 is converged by the electrostatic intermediate lens 4316, and is imaged on the principal surface FP1 of the first ExB separator 4317, and is then converged by the electrostatic intermediate lens 4318 to form an image. The second E xB splitter 4320 is biased toward the main surface FP2, and finally the image is on the test piece surface SF. The secondary electrons emitted from the test piece surface SF are accelerated and converged by the accelerated electric field applied to the secondary electrons applied to the electrostatic object lens 43 21 and the test piece surface SF, and are separated by the electrostatic object lens 4321 in the second ExB. A little pre-overlapping image of the main surface FP2 of the 4320. The secondary electrons of the junction are deflected by the second ExB separator 4320 and moved along the optical axis B, and are incident on the electrostatic expansion lens 4331. The secondary electrons are enlarged by the electrostatic expansion lens 4331 to enlarge the small holes (4332a to 4332e) of the junction plate 4332. ~ The test piece surface SF and the opening plate 4332 have an optical conjugate relationship with respect to the secondary electron intensity of 2 eV, and the secondary electrons emitted from the test piece surface SF by the electron beam passing through the small hole 4313a of the opening plate 4313 are The secondary electrons emitted from the test piece surface SF through the small holes 4332 &amp; of the opening plate 4332 are irradiated with electron beams passing through the opening plate 4332, and the electron beams passing through the small holes 4313c are irradiated. The secondary electrons emitted from the surface SF are in the state of passing through the small holes 4332c of the opening plate 4332, and the secondary electrons emitted from the surface of the test piece by the primary electron beam pass through corresponding to the opening 115 (correction page) 312765 1288424 - The small holes in the opening plates 4 3 3 2 of the small holes of the plate 4 313 are injected into the detector 4341. The C-complex electronic line and its adjacent electronic line can be scanned by scanning the electrons between the electron lines by using the electrostatic biasing 4319 and the second ExB separator 4320 to cause the electron beam to be scanned as a principal light as indicated by the symbol E. When the second scan is performed by the second Εχβ splitter, the Wien filter condition of the second Εχβ separator 4 (10) is full, and the voltage of the straight line of the electron beam is Vw, the magnetic field is Bw, and the magnetic field of Vw is centered on the DC voltage of Vw. The voltage may overlap the electrical waveform of the sweep voltage, and if the electrode that supplies the electric field of the second splitter 432 is an electrostatic deflector of the Lu Ba pole, the binary scan can be performed. In this way, it is not necessary to be static, the upper device of the mirror 4321 is newly installed, and the Εχβ separator and the electrostatic deflection state can be set at the most appropriate positions. The eight-person β children are aware of the problem of electronic line blurring due to color collection and difference when using a single ΕχΒ separator, and the countermeasures to be solved. Generally, an electron beam device using a helium separator has a minimum difference in the position of the image of the opening of the electron beam and the deviation from the main surface of the helium separator. And the deviation between the main surface and the surface of the ε汕 is a common vehicle relationship. Therefore, when there is an energy amplitude of the f-line f-human Εχβ separator, the enthalpy of the low-energy electron line is inversely proportional to the energy of the electric field, and the amount of the magnetic field bias is only inversely proportional to the 1/2th power of the energy. Become bigger. On the one hand, the high-energy electron beam is biased by the magnetic field to be larger than the amount biased by the electric field. Here, an electrostatic lens is disposed on the side of the Εχβ separator, and if the lens has no difference, the electron line is not blurred, but the electron beam is blurred due to the lens. Therefore, only the single (correction page) 3 〗 2765 116 1288424 - one ΕχΒ separator can not avoid the color difference blurring the electron line when the energy of the electron beam has amplitude. The present invention is provided with two first and second ΕχΒ separators 4317 and 4320. The direction in which the electric field is deflected by the first splitter 4317 and the second splitter 4320 is opposite to each other as viewed from the surface of the test piece, and the electric field of each of the splitters is adjusted so that the absolute values of the magnitudes of the deflections of the two separators are equal. Therefore, when the energy of the electron beam has a magnitude, the color difference formed by the ΕχΒ separator cancels off between the first and second ΕχΒ separators 4317 and 4320. When the defect inspection of the test piece surface, the measurement of the line width of the circuit pattern formed on the test piece surface, and the like are performed by using the electronic wire device 4300 having the above configuration, the test piece to be inspected is placed on the test piece table, and the electronic wire device 4300 is as described above. Actions. Here, the scanning signal waveform supplied to the electrostatic deflector 4319 and the second ΕχΒ separator 4320, and the output signal of the secondary electron detector 4341 are used as image data, and the image data and the pattern data obtained by the other are used. A defect check can be performed like a comparison of data. Further, the measured pattern is scanned by the electrostatic deflector 4319 and the second splitter 4320 in the direction perpendicular thereto, and the line width of the pattern can be measured from the obtained signal waveform of the secondary electron. Then, the pattern formed by the photolithography of the second layer is formed into a pattern formed by the photolithography of the second layer, and the two patterns are spaced apart by an electron line approximately equal to the plurality of electron lines of the electron beam device 4300. The interval is formed, and then the pattern interval of the two strips is measured, and the matching precision can be evaluated by comparing the measured value with the set value.仏, ί Connect one or both of the secondary electron detector 4341 to the CRT helmet, and input the scanning signal waveform to form a scanning electron microscope (correction page) 312765 117 1288424: (SEM) image. CRT monitor. The inspector can then look at the SEM image to observe the type of defect. As shown in Fig. 42, a coaxial electrode 4322 is provided between the electrostatic objective lens 4321 and the test piece surface SF, and a potential voltage is applied to the electrode 4322 to measure the potential contrast. Further, in Fig. 42, in order to blank the electron beam, the electron beam is biased to the electrostatic deflector 4314 only when the electron beam is not deflected for a short period of time, and the deflected electron beam is removed by the opening ring 4315. A short pulse of electron lines. The short pulsed electron beam is incident on the test piece surface SF' so that the device on the test piece surface is decomposed in an active state for a good time. The action analysis of the device can be performed by performing the potential measurement of the pattern. Fig. 43 is a plan view showing a state in which a combination of a primary optical system and an primary optical system having the above-described configuration of the electron beam device is provided with a plurality of arrays on the test piece s, and in the present embodiment, six sets of primary optical systems 4310 are provided. The secondary optical system 4330 is arranged in two rows and three columns. The solid line drawing diagrams 431〇a to 4310f are the maximum outer diameters of the primary optical system, and the one-point line drawing diagrams 4330a to 4330f are the maximum outer diameters of the secondary optical system. In the present embodiment, the small holes of the opening plate 4313 of the primary optical system 4310 are arranged in three rows and three columns, and the small holes of the opening plate 4332 of the secondary optical system 4330 are also arranged in three rows and three columns. The optical axis β of each of the primary optical systems 4330 is arranged in a row arrangement toward the outside of the test piece to avoid mutual interference. The number of columns is preferably about 3 or 4, but it is also possible to set the following 2 columns or more. The electronic line depletion 43 of the fifteenth embodiment of the present invention can also be used for the wafer inspection process of Fig. 12 for inspecting processed wafers. That is, when the defect inspection method and the defect inspection package (correction page) 312765 118 1288424:f of the fifteenth embodiment of the present invention are used for the inspection process, the semiconductor device having the fine pattern can be checked only with good productivity. Inspection of the product is possible, thereby improving the yield of the product and preventing the shipment of the defective product. (10) The electronic wire device 43A according to the fifteenth embodiment of the present invention (Fig. 42 achieves the following effects. (1) The productivity can be improved by using a plurality of electronic wires. (2) A plurality of separators can be provided to open the opening. The position of the image of the aperture of the plate is the same as the position of the ΕχΒ separator, and the direction of the electron line deflected by the electric field of each Εχβ separator is opposite to each other in the financial plane, so the color produced by the ExB separator can be corrected. The "receiving difference" can be used to twist the electronic wire into a thin line, and can read the inspection accuracy. (3) The electric field of the second ExB separator is superimposed to scan the electric dust to deflect the electron line'. Therefore, the second ExB separator can be The electrostatic deflector is shared, and it is not necessary to newly install an electrostatic deflector on the upper portion of the electrostatic object lens 4321, and the ExB separator and the electrostatic deflector can be disposed at the most appropriate positions, thereby simultaneously improving the detection efficiency of the secondary electrons and By reducing the deviation of the deflection, the optical path of the secondary optics can be greatly shortened. (4) The complex number is set on the test piece by combining the primary optical system and the secondary optical system of the electronic wire device. For groups, it is possible to check the reduced specimens at (5) and the productivity is further improved. (5) A coaxial static electricity is applied between the electrostatic object lens 4321 and the test piece (4), and the potential is applied to the electrostatic deflector by applying a negative electric charge to the electrostatic deflector. (6) Set the blanking function of the electronic line to control the voltage formation of the electrostatic deflector 4314 (correction page) 312765 119 1288424 - Short pulse electronic line, so that the device on the test piece is in operation state with good 'time decomposition can implement graphics The action analysis of the device can be performed by measuring the potential. Fig. 44A is a view showing a schematic configuration of an electron beam device 4400 according to a sixteenth embodiment of the present invention. As shown in Fig. 44A, the electron beams discharged from the electron gun 4401 are converged by the capacitor lens 4402, and overlap at a point 4404. Below the capacitor lens 4402, a first plurality of opening plates 4403 having a plurality of small openings are formed, and a plurality of primary electron beams are formed therefrom. Each of the primary electron lines formed by the first plurality of aperture plates 4403 is reduced by the reduction lens 4405 and projected at a point 4415. After the primary electron beam is focused at point 4415, the target lens 4407 is focused on the test piece 4408. The plurality of primary electron lines from the first plurality of aperture plates 4403 are deflected by the deflector 4419 disposed between the reduction lens 4405 and the objective lens 4407, and the surface of the test piece 4408 placed on the xy table 4420 is scanned. . As shown in FIG. 44B, in order to eliminate the influence of the reduction of the curvature of the reduction lens 4405 and the object lens 4407, the first 娄i opening plate 4403 is provided with a small opening 4433 on the circumference, which is equal to the X-axis. The projection point is the setting of the equal interval Lx. The plurality of focused electron beams are a plurality of points irradiated on the surface of the test piece 4408, and the secondary electron lines discharged from the plurality of irradiated points are attracted by the electric field of the objective lens 4407 to be thinned and separated by an ExB separator. 4406 deflects it into the secondary optics. The secondary electron image junction is closer to point 4416 of object lens 4407 than point 4415. The reason is that each primary electron line has 50OeV of energy on the surface of the test piece, while the secondary electron line has only a few eV of energy. 120 (Revision page) 312765 1288424 The secondary optics is provided with enlarged lenses 4409 and 4410 through which the secondary electron lines of the enlarged lenses are then passed through a plurality of openings 4443 of the second plurality of aperture plates 4411 to form a plurality of electron detectors 4412. As shown in Fig. 44B, the plurality of openings 4443 formed in the second plurality of opening plates 4411 provided before the detector 4412 are in a one-to-one correspondence with the plurality of openings 4433 formed in the second plurality of opening plates 44〇3. The plurality of detectors 4412 are each disposed in a plurality of openings facing the second plurality of aperture plates 4411. Detector 4412 converts the detected secondary electron beam into an electrical signal indicative of its intensity. The electric signals outputted from the respective detectors 4412 are amplified and converted into image data by the imaging processing unit 4414. Since the imaging processing unit 4414 supplies the scanning signal 35 for deflecting the primary electron beam, the imaging processing unit 4414 can generate an image indicating the surface of the test piece 44〇8. The defect of the test piece 44〇8 can be checked by comparing the key with the standard pattern. The rising width detecting unit 4430 operates to cut off the excitation voltage during the initial focusing, and does not operate during the processing. The operation will be described later. Further, the image of the test piece 4408 is moved closer to the optical axis of the optical system by image superposition, and a line scan is performed to take out the line evaluation signal, and appropriate correction is performed to determine the pattern on the test piece 44〇8. Line width. The primary electron beam passing through the opening 4433 of the first plurality of opening plates 4403 is focused on the surface of the test piece 4408, and when the secondary electron beam which is discharged from the test piece 44A is imaged on the detector 4412, it is particularly necessary to consider The effects of distortion caused by one optical system, axial color difference, and visual field non-point are the smallest. In addition, regarding the relationship between the interval of the plurality of electron lines and the secondary optical system, the distance between the electron beams and the secondary electrons (correction page) 312765 121 1288424 is greater than the distance difference. This eliminates crosstalk between complex electronic lines. As shown in Fig. 44C, the objective lens 4407 is a uni potential lens, so that the primary electron beam is focused on the surface of the test piece 44〇8, and the central electrode of the object lens 4407 is positively applied by the power source 4428. At a high voltage of VG volts, a bias voltage of a small voltage close to the ground potential of the power source 4429 is applied to the upper side and the lower side of the object lens 44A7. The electronic grab 4401, the shaft-aligning deflector 4417, the second opening plate 4403, the capacitor lens 4402, the deflector 4419, the Wien filter, ie, the Εχβ separator 4406, the objective lens 4407, the axisymmetric electrode 4423, and the secondary electron The detector 4412 or the like is housed in a lens barrel 442β of an appropriate size to constitute an electronic line scanning inspection system. The focus of the initial focus of the electronic line scanning detection system is the excitation voltage V. For example, it is fixed at -1 volt volt, and the positive voltage V is changed. Implementation. On the upper side, the electron beam scanning detection in the lens barrel 4426 is performed on the crystal on the test piece, and the scanning result is an electrical signal represented by detecting the second time from the test piece, and rotating the intensity thereof. . In fact, a plurality of wafer patterns are formed, so that the electronic line scanning detection system (not shown) composed of :: is complex.  仵 ^, the distance between them is the state setting of the distance of the wafer size on the test piece. 'Plus / 1 down - step to explain the electronic line scanning detection system, by electronic inspection, crying 4412 rounds of electric oxygen ton 轳 force 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占 占The data is converted into a number of basins of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of the number of Compare it to the reference circuit pattern. Thereby, defects or the like of the circuit pattern formed on the test piece can be detected. A comparison with the image data indicating the circuit pattern on the test piece can be performed using various types of non-image data. For example, the data of the (10) data used in the circuit pattern of the image data obtained by H can be used. In the electronic wire device of Fig. 44A, the value of the excitation voltage ±Vq applied to the objective lens, the upper I and the lower electrode is controlled by a device such as cpu (not shown) and is determined as follows. The two cuts are formed on any of the circuit patterns formed on the surface of the test piece, for example, by reading the pattern edge iP^ernedge parallel to the first direction from the pattern data, and the pattern parallel to the second direction orthogonal to the first direction. Therefore, the location of existence is specified. Scanning in the second direction by the pattern of the secondary electron deflector 4419 and the dirty separator side by the secondary electron line crying 4 two enemy brothers / direction, by electronic detection:, take out, the result shows the intensity of the secondary electron beam The electrical signal ~ the rising amplitude detecting unit 443 〇 〇 该 该 〇 〇 〇 〇 〇 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 419 对于 对于 平行 平行 406 406 406 406 406 406 In the 1-direction scanning, the sub-private measurement 4412 takes out the scanning result to indicate that the electrical signal of the secondary electronic line 2 is released, and the electrical signal-upsizing Ρ is measured by the rising amplitude detecting unit 4430. The above operation is performed by changing the voltage ±Vd to at least three kinds of voltage value control devices (not shown) according to the data of the rising amplitude detecting portion 443 (correction page) 312765 123 1288424. The curve A represents the relationship between the edge of the figure parallel to the 〗 〖 direction and the rising amplitude P of the soil ΔVg. The curve β represents the relationship of the pattern side parallel to the second direction to the rising width p. As shown in Fig. 45B, the "rising amplitude R" of the electrical signal is fixed in a state in which the excitation voltage ΔV〇 (and the high voltage V()) is fixed, and will be parallel to the second direction (or the jth direction). The electrical signal measured when the pattern is scanned in the second direction (or the ith direction) is changed from 丨2% of the maximum value to 88%. The required scanning distance is represented by R (early position &quot;m). The curve A of Fig. 45A shows that the upper rise Ρ is the smallest when the excitation voltage Δν 〇 is -Δν 〇 (χ), indicating that the rise is the fastest. The same curve 6 has the smallest increase in the excitation voltage ±?^ is AVky), and the rise is the fastest. Therefore, the focus condition of the objective lens 4407 is the voltage ±Δν applied to the upper electrode and the lower electrode. The value is set to divination ν. (1) + Δν. (7)}/2 is appropriate. The excitation voltage is Δν. Only in the range of 〇 to ±2〇ν, the actual adjustment of the objective lens 4407 as described above, the setting of the objective lens 4407 can be performed at a high speed of α 1 〇 # s, in order to obtain the curve a&amp;b 150 of Fig. 45A. // s 〇 ', but to get the music, the line Α and Β do not need to △ ν for the majority of the soil. Perform the measurement, as shown in the 45th, for the voltage value of the third voltage, set V(2), +ΔΚ3ΠΧ to measure the rising width ρ, and find the curve (1) by the hyperbolic approximation to find the minimum value of the rising towel—Δν. (1) Δν (1) is sufficient. Here, the measurement can be performed at a level of 45 microseconds. As described above, the curve Α and β of the 45th graph are approximate to the quadratic curve (correction page) 312765 124 1288424 line. &quot;m), the object lens voltage ± Δν ° is q (Ό then curve a and when constant can be represented by q (V) (P2 / a2) - (qc) 2 / B2 = 1. If three q ( The voltage ±V (the value of 〇 q p (rise towel 5) 彳t value Deng and its corresponding rise W value P1, P2, P3 substituting the above formula can get the following 3 formula (1) to w)-(Φ- c)2 / b2 = 1 :··(1) (p22/a2)- (q2-c)2 / b2 = 1 (2) (P32/a2)-(q3-c)2 / V = 1'··(3 When q=c, the values of a, b, and c can be calculated from the above equations (1) to (3) to be the minimum value. As shown in the above 4', the rising amplitude P is the smallest for the parallel third direction. The excitation voltage of the lens can be obtained with three lens conditions: mirror = (:) for the edge of the pattern parallel to the second direction. As shown in Fig. 45A and Fig. 45B, when the first direction extending edge is scanned in the second direction, the rising width is generally different when the pattern extending in the second direction is scanned in the f direction. For example, it is necessary to The eight-pole non-point correction is applied to the 4421 (44®), and (4) the (4) is applied to the lens to make the rise of the electrical signal for the edge of the pattern and the output of the second-party electron detector 4415 smaller. The state of the line is non-point correction. When the non-point difference is not present, only one of △&) or ΔV〇(y) can be obtained, and the curves A and B can only find one. As described above, the focus pair (correction page) 312765 125 1288424 for the electronic line scanning detection system is executed, and then the focus is shifted to the evaluation processing for the test piece. This method uses an optical z-sensor to obtain a counterpart by means of electro-optical means. Therefore, it is advantageous to obtain correct focusing conditions when the test piece is charged. A state in which a lens barrel (not shown) having a barrel 4426 including an electron beam scanning detection system is arranged in parallel with the lens barrel 4426 is at a distance from an integral multiple of the crystal size of the test piece 4. In the state configuration, it is necessary for each mirror ft to focus on the test piece. However, because the above-mentioned focusing action can be carried out at the same time, the West has little effect on the productivity calculation. The semiconductor device manufacturing method of the present invention will be described next. The semiconductor manufacturing method of the present invention is a semiconductor device manufacturing method using the above-described first electron beam device and the semiconductor device shown in Fig. 13. In the manufacturing method, the electronic wire device described with reference to FIG. 44 is used, and it is used not only in the process of the process "rounding inspection process" but also in the inspection process of the wafer (Fig. 2). The graphic guide of the introduction of the seven-portion ~ heart thousand body device also seeks distortion, blurring to reduce the image, so it can indeed detect defects in the wafer. Because of the application of the electronic wire device of the present invention to the wafer inspection process and the wafer inspection process of FIG. 12, it is also possible to perform inspection for high-productivity for a semiconductor device containing a fine pattern. If possible, increase the yield of the product and prevent the outflow of defective products. The electronic wire device 44 according to the sixteenth embodiment of the present invention has the following effects. (1) Since it is not necessary to use an optical sensor for measuring the height of the test piece surface, only the (correction page) 312765 126 1288424 - the electron optical system between the objective lens and the test piece can be optimally designed. (8) The focus of the electronic line scanning detection system can be achieved only by adjusting the low voltage, and the setting time can be shortened, that is, the focusing can be performed in a short time. (3) It is possible to perform non-point correction in a short time in the focusing operation in response to actual needs. Since the test piece can be evaluated in a short time during the process, the yield of the device manufacturing can be improved. Next, an electronic wire device 4500 according to a seventeenth embodiment of the present invention will be described with reference to Figs. 46 and 47. Fig. 46 is a view showing the mode of the electronic wire unit 4500 of the seventeenth embodiment. The electron beam device 45A includes a primary optical system 451A, a secondary optical system 4530, and a detecting device 4540. The human optical system 4510 is a photonic system that emits electron beams on the surface of the test piece S, and includes an electron gun 4511 that discharges electron beams, an electrostatic lens 4513 that reduces electron beams emitted from the electron gun, and a plurality of columns in which secondary elements are formed. a second aperture opening 4514, an opening ring 4515, an electrostatic lens 4516 that narrows the electron beam passing through the first opening plate, an electrostatic deflector 4517, an ExB separator 4518, and a small aperture (4514a to 4514i in Fig. 46) The static object lens 4519' is an arrangement in which the optical axis A of the electron beam which is the uppermost portion of the electron gun 4511 and the electron beam is discharged as shown in Fig. 46 is perpendicular to the surface of the test piece f. Inside the electronic grab 4511, a single crystal LaBe cathode is ground into a raised portion 4512 having a plurality of convex shapes. In order to eliminate the influence of the surface curvature of the electrostatic lens 4513, 4516, and the electrostatic object lens 4519, as shown in Fig. 47, the first opening plate has a small hole formed in the circumference and its projection in the X direction is equal. Interval Lx. 127 (Revision page) 312765 1288424 The secondary optical system 4530 includes a first electrostatic expansion lens 4531, an opening ring 4532, and a second electrostatic expansion lens which are disposed in order along the optical axis Α inclined to the vicinity of the ΕχΒ separator 4518. 4533, and a second opening plate 4534 having a plurality of small holes (only 4534a to 4534i shown in the figure) formed with a second element. The detector 4540 is provided with a detector 454 at each opening of the second opening plate 4534. The number of holes 4534a to 4534i in the small holes of the plate 4534 (indicated by broken lines in Fig. 47) and the arrangement of the small holes (indicated by solid lines in Fig. 47) formed by the first opening plate 4514 are consistent with the number and arrangement of the holes 4514a to 4514i. . The above configuration may be a known technique, and the description thereof is omitted here. Next, a standard mode of the above-described electronic wire device 4500 will be described. The electron beam c discharged from the boss portion 4512 of the single electron gun 4511 is converged by the electrostatic lens 4513 and irradiated onto the first opening plate 4514. The plurality of small holes (4514a to 4514i) formed by the first opening plate 4514 of the electron line c are formed into a plurality of electron lines. The plurality of electron lines form an overlap image C1 at the opening ring 4515. The overlapping plurality of electron beams are applied to the test piece S, and are closed by the electrostatic intermediate lens 4516 provided on the way, and are imaged on the main surface of the electrostatic objective lens 4519 to satisfy the Keller illumination condition. The plurality of electron lines of the junction form a reduced image on the test piece, and the test piece is scanned by the deflection of the electrostatic deflector 4517 and the ExB separator 4518. The secondary electrons emitted by the test piece S are applied to the electrostatic opposite lens. The accelerating electric field between 4519 and the test piece S is accelerated and converged, and the electrostatic object lens 4519 is moved by the deflection of the separator 8518 along the optical axis 6 to enter the electrostatic expansion lens 4531. The secondary electrons are enlarged by the electrostatic opening lens 4531 128 (modified page) 312765 1288424 to form an overlapping image C2. The secondary electrons of the junction image are further enlarged by the electrostatic expansion lens 4533, and are formed in the small holes (4534a to 4534i) of the second opening plate 4534. The expansion ratio of the secondary filament system can be determined by two electrostatic expansion lenses 4531 and 4533. As shown in Fig. 47, the electron beam passing through the small hole 451 of the jth opening plate 4514 is incident on the secondary electron that is discharged through the small hole 4534a of the second opening plate 4 through the small hole 451. The secondary electrons emitted by the pattern s are passed through the small holes 453, and the electron beams emitted from the test piece S through the electron beam passing through the small holes 4514c are in the state of passing through the small holes 4534c, that is, the primary electrons. The secondary electron beam placed by the line on the test piece s is incident on the detector 4541 through the small holes of the second opening plate 4534 corresponding to the respective holes of the W-th plate. When changing from the above standard mode to the high resolution mode, it is necessary to change the fingerprint size and change the image magnification. Changing the scanning width can be achieved by adjusting the deflection sensitivity per bit of the deflector of the electrostatic deflector 7 and the ExB splitter 4518. However, if the scanning width is reduced from the standard mode, a scanning gap occurs between the scanning of the respective electron lines of the plurality of electron lines. Further, the interval between the electron line image interval and the detector in the secondary optical system becomes inconsistent. The scanning gap between the electron lines can be changed by the zooming action of the third opening plate 45^ to the test piece S by the electrostatic lens 4516 and the electrostatic objective lens 4519 1 to change the size corresponding to the size of the element. has been solved. The hungry condition for the image of the overlapping image C1 on the principal surface of the objective lens 4519 is that only the standard mode is satisfied, and the high resolution mode is not satisfied. ',,, for the line between the electron line of the secondary optics and the detector of the detector (correction page) 312765 129 1288424 - the countermeasure against the size difference, the position and size of the opening ring 4532 of the secondary optical system The excitation voltage of the electrostatic expansion lens 4533 is changed so as to be fixed so that the chief ray of the secondary electrons emitted from the respective electron lines of the test piece is incident on the small hole of the corresponding second opening plate. That is, the electrostatic expansion lens 4533 of the secondary optical system integrates the focusing conditions of the overlapping magnification with the opening ring 4532. Further, the reduction ratio of the plurality of electron beams is a zooming operation by the electrostatic lens 4516 and the electrostatic counter lens 4519, and the zooming operation is performed, and the enlargement ratio is changed by the electrostatic expansion lenses 4531 and 4533 of the secondary optical system. The size is evaluated for the test piece. Specifically, the relationship between the reduction ratio of the complex electron beam of the primary optical system and the expansion ratio of the electrostatic lens of the secondary optical system is specifically such that the size between the openings (for example, the interval between 4514a and 4514b) in FIG. 46 is 1 mm, once. When the reduction ratio of the complex electron lines of the optical system is 1/100, the interval between the electron lines emitted from the openings 45i4a and 4514b is 1 〇#m. On the other hand, if the expansion ratio of the secondary optical system is 500 times, the interval between the openings 453 and 4534b is 5 mm. When the reduction ratio of the complex electron beam of the primary optical system is 1/2 ,, the expansion ratio of the secondary optical system is changed to 500 χ 2 = 〇 00 times, and the interval between the openings 4534 &amp; 4534b is 5 mm, and the opening 4534a and The interval of 4534b can be detected by secondary electrons without changing. An advantage of this feature is that the electron beam size, the electron beam current, and the scanning width can be changed by changing the reduction ratio of the complex electron beams by the primary optical system. This makes it possible to carry out evaluations with low productivity but high resolution, and evaluations with low decomposition energy but high productivity. Further, in a mode in which the productivity is high but the resolution is low, an overlapping image is formed on the main surface of the objective lens. Specifically, for example, for a resolution of (correction page) 312765 130 1288424 ^ 22 is a (one) minute ... mode and resolution is 1. - A device with a productivity of 33 seconds/em mode, the former mode being placed on the main surface of the objective lens. 1、Electrical device according to the seventeenth embodiment (FIG. 46) of the present invention, the manufacturing method of the fourth embodiment and the semi-conducting time of the first embodiment, that is, the third embodiment of the present invention is used for the inspection process of the manufacturing method. For example, when the 、 = method and the defect inspection device are used, the + ¥ body clothing with fine patterns can also be inspected with good productivity. It is possible to check the product to improve the yield of the product and prevent defective products. The exit Ά 0 According to the π-th embodiment (FIG. 46) of the present invention, the following effects can be achieved. (1) Since it is possible to form an image of an arbitrary magnification without a scanning gap, it can be used in the standard mode and the high resolution mode. (2) When the magnification is changed, 'this can roughly correspond to the size of the image and the size of the electron beam. (3) The standard mode can be used for the illumination of the sub-optical system. On the one hand, the deviation of the Keller illumination condition in the = resolution mode red-sub-optical system is small, and the difference does not increase greatly. (4) Since the secondary electrons emitted from the material in the vertical direction of the test piece are provided with open circles at positions crossing the optical axis of the -t light (4), it is also possible to detect the difference between the plurality of electron lines without changing the intensity. Secondary electrons. The electronic line device 5000 of the first embodiment of the present invention (amendment page) 312765 131 1288424 will be described with reference to Figs. 48 and 49. The electron beam device 5000 of Fig. 48 includes a primary electron optical system (hereinafter referred to as "primary optical system") 5010, a secondary electron optical system (hereinafter referred to as "secondary optical system") 5020, and a detection system 5030. The primary optical system is an optical system that generates an electron beam to be irradiated onto the surface of an evaluation object (hereinafter referred to as "test piece") S of a wafer or the like, and includes an electron gun 5011 that emits a primary electron beam, and an electronic wire that is discharged to the electron gun 5011. The condenser lens 5012, the first plurality of aperture plates 5013, the reduction lens 5014, the ExB separator 5015, and the objective lens 5016 are formed with a plurality of openings. These are arranged in the order of the top of the electron gun 5011 as shown in Fig. 48. 5017, 5018 A deflector for scanning the primary electron beam, 5019 is an axisymmetric electrode. The secondary optical system 5020 includes enlarged lenses 5021 and 5022 and a second plurality of aperture plates 5023 arranged along an optical axis inclined to the optical axis of the primary optical system. The detecting unit 5030 includes a detector 503 provided for each opening 5231 of the second plurality of aperture plates 5023, and an imaging forming unit 5033 for connecting the detectors via the amplifier 5032. The structures and functions of the constituent elements of the primary optical system 5010, the secondary optical system 5020, and the detection system 5030 are the same as those of the prior art, and detailed description thereof will be omitted. The opening 5131 of the first plurality of opening plates 5013 is formed corresponding to the opening 5231 of the second plurality of opening plates 5023, and the opening 5131 is shown by a solid line (Fig. 49), which is smaller than the opening 5231 indicated by a broken line. The test piece S is supported by a holding means 5041 of the table apparatus 5040 by a known method. The holding portion 5041 is supported by the XY table 5042 so as to be movable in the orthogonal direction. The electronic wire device 5000 includes a deceleration 132 (correction page) 312765 1288424 voltage application device (hereinafter referred to as an application device) 5050, a charge investigation and deceleration voltage determination system (hereinafter referred to as investigation and determination system) 5060 that is electrically connected to the security unit 5041. The investigation and determination system 5060 includes a monitor 5061 for electrically connecting the image forming unit 5033, an operator 5062 connected to the monitor 5061, and a CPU 5063 connected to the operator 5062. The CPU 5063 supplies signals to the aforementioned applying device 5050 and deflector 5017. Next, the operation of the electronic wire unit 5000 of the eighteenth embodiment will be described. The primary electron beam emitted by the electron gun 5011 is overlapped by the condenser lens 5012 at a point P1 to form an overlap. The plurality of electron lines are formed by the plurality of openings 5131 through the electron lines passing through the openings 5131 of the first plurality of opening plates 5013. The primary electron line formed by the first opening plate 5013 is reduced by the reduction lens 5014 and projected at the point P2. After focusing at point P2, it is focused on the surface of the test piece S by the objective lens 5016. The plurality of electronic wires are subjected to scanning by the deflector 5018 provided between the reduction lens 5014 and the objective lens 5016 while scanning the test piece surface. In order to eliminate the influence of the curvature reduction of the reduction lens 5014 and the object lens 5016, the plurality of openings 5131 and 5232 of the plurality of aperture plates 5013 and 5023 are provided on the circumference of the optical axis of each optical system, and the X direction thereof The distance Lx between the adjacent projections is equal to that shown in Fig. 49. The primary electron beam of the plurality of focusing is irradiated onto the test piece S, and the secondary electrons emitted by the plurality of points of the irradiation are attracted by the electric field of the objective lens 5016, and are deflected by the ExB separator 5015 to be incident on the secondary optical system. 5020. The secondary electron line is closer to the point P3 of the object lens than the point P2. It is because the primary electron beam has a weight of 500 volts on the surface of the test piece and the secondary power 133 (correction page) 312765 1288424 is only a few eV of energy. The secondary electron beam is enlarged by the lens 5〇21 and the plurality of gates of the slab 5G23 are passed through the second detector 503. The detectors 5031 are detected by the detectors of the Rmi object lines, which are set in the respective openings. Each test ^ ^ i : The detected secondary electrons are converted into electrical 1 表示 indicating their strength. From each of the detector wheels, the name of the device is increased, and the corresponding amplifier 5032 is amplified and the input image forming unit 5〇'33 is input. For the formation of the neighboring image, the / / ± ± ± 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 欠 ± 欠 欠 欠 欠 ± 欠 欠 ± 欠 ±昼 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The figure of the map is opened. The appropriate correction can be used to map the material line. No. In the test: the opening of the opening of the opening plate 5013 of the two ^1 - sub-electronic line focusing \ released by the piece s The secondary electron junction is like the detector price. It is especially necessary to consider the effects of the distortion caused by the primary optical system, the difference between the Yang and the non-point of the field of view. The relationship between the spacing between the lines and the secondary optics system 'If the interval between the complex electronic wires is set to be larger than the distance between the secondary optical two, the crosstalk between the complex electronic wires can be eliminated. The image data converted by the part 5033 is displayed by the display device 5061 by the display device and the display device. The processor 5〇62 evaluates the image as the 5062 in the present embodiment to constitute the charge investigation device. Further, operation 134 (correction page) 312765 1288424 TM 5062 investigates the state of charge according to the image. Then the result is input into the cpu 5063, and the pressure is reduced. The voltage is set to the most appropriate value. The CPU constitutes the extinguishing voltage determining means in the present embodiment. Fig. 50A is an explanatory diagram showing the evaluation position and evaluation method of charging. The memory unit (cell) of the negative film 5100 is 51. 2 The outer peripheral portion is a low-density field for the peripheral circuit. The inner side is the memory unit portion and is a high-density shoulder j. Al and A2 are portraits in the realm area, and A3 and A4 are the image of the memory unit unit. The two-point lock line and the broken line in Fig. 5A show the boundary where the density changes greatly. Specifically, the position that is most susceptible to the charge of the evaluated test piece is formed as shown in Fig. 50A. The corner portion of the memory unit 51〇1 of the wafer 5100 on the wafer surface of the test piece is evaluated. That is, (1) the amount of pattern distortion of the memory unit boundary 5102 is measured for the corner portion 51〇3, 51〇4', or (2) in the memory unit The comparison of the signal intensity obtained by scanning the corners across the pattern (as indicated by arrows A1 and A2) is indicated by solid lines 5105 and 5107 in Fig. 50B, and by scanning the arrows at the center of the wafer by arrows A3 and A4. The comparison of the signal strengths 5106 and 51〇8 (indicated by the broken lines in the fifth panel B) is performed by comparison. The voltage of the complex value is applied to the deceleration voltage applying device 5050 and the distortion amount 5103 and 5104 is measured or compared. 5105, 5107, and 5106, 5108, and when the distortion amounts 5103 and 51〇4 are small, the influence of charging is small. The contrast value of the corners is 51〇5, 51〇7 is closer to the central part. The time is evaluated as being less affected by charging. When the deceleration voltage with a good charge state is detected, its value is supplied to the application device 5050' via 135 (correction page) 312765 1288424: CPU 5063, and the evaluation is performed on the wafer. Further, it is also possible to reduce the electron beam current in the test piece in which the charging is reduced by reducing the electric current. As described above, since the image of the vicinity of the boundary where the pattern density of the test piece is largely changed is changed, the effect of charging is apparent from the image, and thus the charged state is easily evaluated, thereby making it easy to measure the decelerating voltage which is less likely to generate electricity. The electron beam device 5 of the eighteenth embodiment (Fig. 48) of the present invention can be suitably used in the method of manufacturing the semiconductor device of Figs. 12 and 13. In other words, when the electronic wire device of the eighteenth embodiment of the present invention is used in the inspection process of the manufacturing method, the semiconductor device having the fine pattern can be inspected with good productivity, and it is possible to inspect all the products. It can improve the yield of defective products and prevent the shipment of defective products. According to the electronic wire device 5 of the eighteenth embodiment (Fig. 48) of the present invention, the following effects can be obtained. (1) Productivity can reach a multiple of the number of electronic lines, which is several times higher. (2) Since the wafer is evaluated in the state where the state of charge is the smallest, the reliability is good. (3) The charging performance is measured by various currents, and the actual image is evaluated. Therefore, a more accurate evaluation result can be obtained. Fig. 51 is a view showing the ExB separator 6〇2〇 of the μth embodiment of the present invention. The ExB separator 6〇2〇 is composed of an electrostatic deflector and an electromagnetic deflector, and Fig. 51 is a cross-sectional view on the y-y plane of the orthogonal optical axis (the axis perpendicular to the plane of the drawing: 2 axes). The X-axis direction is orthogonal to the y-axis direction. The electrostatic deflector has a pair of electrodes disposed in the vacuum vessel (electrostatic bias 136 (correction page) 312765 1288424 ^electrode '1 ' is used to generate an electric field E in the direction of the x-axis. The electrostatic bias is reversed through the insulation 6001. The distance J3 between the electrodes of the vacuum chamber 3 installed in the vacuum chamber is set to be smaller than the length 2L of the axial direction of the electrostatic deflection electrode. From the above setting, the range in which the electric field intensity formed around the z-axis is the same is relatively large, but ideally, for example, d &lt;l, the larger electric field strength can be obtained in the same range. That is, the D/2 range of the end line of the ytterbium electrode has different electric field strengths, and the field in which the electric field strength is substantially the same is the 湏 field of D which removes the central portion of the different end regions. Therefore, in order to have an area in which the electric field strength is the same, it is also necessary to make 2L&gt;D, and set l&gt;D to be larger in the field of the same electric field strength. An electromagnetic biasing force for generating a magnetic field M in the y-axis direction is provided on the outer side of the vacuum wall 6003. The electromagnetic deflector includes electromagnetic coils 6〇〇4 and 6〇〇5, and each of the coils generates a magnetic field in the X-axis direction and the y-axis direction. Further, the magnetic field μ in the x-axis direction can be generated by only the coil 6005. However, in order to increase the orthogonality between the electric field e and the magnetic field ,, a coil 6〇〇4 which generates a magnetic field in the X-axis direction is provided. That is, the magnetic field component in the x-axis direction generated by the coil 6004 cancels the magnetic field in the x-axis direction generated by the coil 6〇〇5, so that the orthogonality between the electric field and the magnetic field is good. The coils 6〇〇4 and 6005 for generating the magnetic field are provided in the vacuum container, and the two divided portions are attached to both sides of the vacuum wall 6〇〇3, and the portion 6007 is fixed by screws or the like. . The outermost layer 6〇〇6 of the tantalum separator is composed of an iron-nickel alloy (permaH〇y) or a yoke made of ferrite. The outermost layer 6006 is divided into two in the same manner as the coils 6004 and 6005, and is attached to the outer side of the coil 6005 from both sides, and the portion 6007 is fixed by screws or the like and integrated. 137 (Revision page) 312765 1288424 Fig. 52 is a cross-sectional view showing the Εχβ separator 6〇4〇 of the twentieth embodiment of the present invention orthogonal to the optical axis (Ζ axis). Fig. 52 is a splitter 6〇4〇. The electrostatic deflecting electrode 6001 is provided with six poles different from the helium separator of the nineteenth embodiment shown in Fig. 5. For the electrostatic deflection electrodes 6 , when the angle between the center of each electrode and the optical axis (two axes) and the electric field direction &amp; axial direction is ^=0, Bu 2, 3, 4, 5) , is the supply voltage proportional to _ ^ voltage k · C0S ^ (k is a constant). Any angle. The twentieth embodiment shown in Fig. 52 is similar to the ninth embodiment, and only the electric field X in the X-axis direction is generated. Therefore, the coils 6004 and 6005 which generate the magnetic field in the y-axis direction are corrected to correct the degree of orthogonality. According to the second embodiment, the field of the electric field strength is the same as that of the nineteenth embodiment shown in Fig. 51. In the ΕχΒ separator of the 19th and 2nd embodiments shown in Figs. 51 and 52, the coil for generating the magnetic field is formed in a saddle shape, but a loop-shaped coil may be formed. Fig. 53 is a schematic view showing an electron beam apparatus 6000 (defect inspection apparatus) according to a twenty-first embodiment of the present invention in which a primary electron beam and a secondary electron beam are separated by using the Εχβ separator of the 20th and 21st embodiments. As shown in Fig. 53, the electron beam discharged from the electron gun 6021 is converged by the capacitor lens 6〇22, and overlaps at a point 6024. Below the capacitor lens 6022, an i-th complex opening plate 6023 having a plurality of openings is formed, and a plurality of primary electron beams are formed therefrom. Each of the plurality of formed electron lines is reduced by the reduction lens 6 〇 25 and projected at a point 6 〇 35. After focusing at point 6035, the objective lens 6〇27 is focused on the wafer 6028 of the test piece. The plurality of primary electron lines from the first plurality of aperture plates 6〇23 are subjected to a deflection of 138 (correction page) 312765 1288424 to a deflector 6039 disposed between the reduction lens 6025 and the objective lens 6027 while simultaneously performing the wafer 6028 surface. scanning. In order to prevent the curvature reduction of the reduction lens 6025 and the objective lens 6027 from occurring, the first plurality of aperture plates 6023 are as shown in FIG. 53B, and a plurality of small openings are provided on the circumference, which are on the X-axis. The points of projection are at equal intervals. The plurality of focused primary electron beams are a plurality of points irradiating the wafer 6028, and the secondary electron beams emitted from the plurality of irradiated points are attracted by the electric field of the objective lens 6027 to be bundled into a thin line, which is deflected by the ExB separator 6026. Into the secondary optics. The image formed by the secondary electron beam is the junction 6036 closer to the object lens 6027 than the point 6035. The reason is that the plurality of electron lines each have about 500 eV of energy on the surface of the wafer 6028, while the secondary electron line has only a few eV of energy. The secondary optics includes enlarged lenses 6029 and 6030, and the secondary electron beam junction of the lens is enlarged to form a plurality of openings in the second plurality of aperture plates 6031. It is then detected by the complex detector 6032 through the openings. The plurality of openings of the second plurality of aperture plates 6031 before the detector 6032 and the plurality of openings of the first plurality of aperture plates 6023 have a one-to-one configuration as shown in Fig. 52B. Detector 6023 converts the received secondary electron beam into an electrical signal indicative of its intensity. The electric signal from each detector 6032 is amplified by an amplifier 6033 and converted into image data by the imaging processing device 6034. The image processing means 6034 is supplied with a scanning signal for deflecting the primary electron line by the deflector 6039, whereby the imaging processing means 6034 acquires the image data indicating the artifact of the surface of the wafer 6028. 139 (Revision page) 312765 1288424; Comparing the obtained imaging data with a standard pattern to inspect the defects of the wafer 6028', and by overlapping the images, the evaluated pattern on the wafer 6028 is moved closer to the optical axis of the optical system. Scanning can take out the line evaluation signal and perform appropriate calibration to determine the pattern line width of the wafer 6〇28. Preferably, an electron beam passing through the opening of the first plurality of aperture plates 6023 is focused on the surface of the wafer 6028, and the secondary electron beam emitted from the wafer 6028 is tied to the second plurality of aperture plates 6031 for detection. It is considered that the effects of the distortion caused by the primary optical system and the secondary optical system, the curvature of field, and the non-point of the visual field are minimized. By setting the minimum value of the irradiation position interval of the plurality of electron lines at a distance larger than the difference of the secondary optical system, the crosstalk between the plurality of electronic lines can be eliminated. According to the nineteenth embodiment of the present invention, the ExB separator 6020 generates an electric field for the electrode using one of the electrostatic deflectors, and forms a parallel plate-type electrode having a larger interval between the electrodes than the length in the direction perpendicular to the optical axis. The field around the shaft that produces the same intensity and is parallel to the electric field is wider. Further, in the ExB separator according to the 19th and 20th embodiments, the electromagnetic biasing device uses a saddle coil, and the angle viewed by the optical axial coil is set to 2 7 Γ / 3 on one side without generating a 3 Θ component. This makes the field of the magnetic field that produces the same intensity around the optical axis and becomes parallel. Further, since the magnetic field is generated by the electromagnetic coil, the weight of the coil can be biased toward the current, thereby providing a scanning function. The ExB separators of the 19th and 20th embodiments are composed of a combination of an electrostatic deflector and an electromagnetic deflector, so that the difference between the electrostatic deflector and the lens system can be calculated, and the electromagnetic deflector and the lens system can be calculated separately. By collecting the difference, the difference between the two collections can be obtained by the optical system. (Revision page) 312765 140 1288424 - 广 The following describes a 'charged electronic wire device 7000 according to a twenty-second embodiment of the present invention with reference to Figs. 55 and 56. "Vacuum" in this embodiment means a so-called vacuum in the art. According to the charged electron beam device 7000 of Fig. 55, the charged electron beam irradiation portion 7002 which is the tip end portion of the lens barrel 7001 which irradiates the test piece with the charged electron beam is attached to the casing 7014 which forms the vacuum chamber C. A test piece S placed on a movable table in the X direction (the left-right direction in Fig. 55) of the XY stage 7003 is disposed directly below the lens barrel 7001. The test piece S is accurately irradiated with a charged electron beam at any position on the surface by a high-precision XY stage 7003. The pedestal 7006 of the XY stage 7003 is fixed to the bottom wall of the casing 7014, and is provided with a table 7005 that moves in the Y direction (the direction perpendicular to the paper in Fig. 55). The two side faces of the Y stage 7005 (the left and right sides in FIG. 55) are recessed in the Y-facing side of one of the Y-direction guide portions 7007a and 7007b placed on the pedestal 7006, and are formed therein. Protruding from the protrusions in the groove. The groove is provided to extend in the Y direction for the entire length of the Y-direction guide. Hydrostatic bearings 7011a, 7009a, 7010a, 7011b, 7009b, &amp; 7010b of a known construction are provided on the upper, lower and side surfaces of the projections protruding in the recesses. The high-pressure gas is blown through the hydrostatic bearing so that the Y stage 7005 is non-contacted to the Y-direction guides 7007a and 7007b, and can smoothly reciprocate in the Y direction. A well-known linear motor (1 inearm motor) 7012 is provided between the pedestal 7006 and the Y stage 7005, and is driven in the Y direction. The Y stage supplies high-pressure gas via a flexible tube 7022 for high-pressure supply, and a static pressure 141 (correction page) 312765 1288424 bearings 7009a to 70113 and 7〇 through a gas passage (not shown) formed in the Y stage. 〇91) to 7〇nb supply high pressure gas. The high-pressure gas supplied to the hydrostatic bearing is sprayed to a gap of several micrometers to several tens of micrometers formed between the surface of the Y-direction guide portion to achieve the Y-direction to the guide surface in the X direction. And the Z direction (up and down direction in Fig. 55) is the correct positioning function. In the Y work, the X-stage 70 04 is a y-direction guide 7007a for moving the β γ table 7〇〇5 and the γ table in the X direction (the left and right direction in Fig. 55). 7〇〇7b The same structure is completed. 7 to 4 are provided with a pair of X-direction guides 7008a and 7〇〇8b (only 7〇〇8a is shown). A groove is formed in the side of the guide surface of the j-direction guide portion on the X-stage, and a convex portion that protrudes into the groove is formed in a side portion of the boring table (on the side facing the X-direction guide portion). The groove extends approximately the entire length of the X-direction guide. The same arrangement as the static bearing 7011a, 7009a, 701〇a, 7011b, 7_b, 7〇1〇b is provided on the upper, lower and side surfaces of the convex portion of the X-direction table 7_ projecting in the convex groove. Press dry bearing (not shown). A linear motor 7013 having a known structure is provided between the gamma table 5 and the boring table 4, and is driven in the χ direction. The pumping station 7004 supplies high-pressure gas from the hose 7021, and supplies high-pressure gas to the static wire. Since the high-pressure gas is ejected from the guide surface of the X-direction guide portion by the static wire, the boring table 7_ can be supported by the directional guide portion with high precision and non-contact. The vacuum chamber C is opened by a vacuum pipe 7〇19, 7〇2〇a, 7〇 connected to a vacuum pump of a known structure, and is placed on the upper side of the position where the high-pressure gas is discharged from the GGι 7GG3. This tries to prevent the pressure in the vacuum chamber from rising due to the high pressure (JL page) 312765 142 1288424 from the static slave. A differential exhaust mechanism 7025 is provided around the front end of the lens barrel 7001, that is, the charged electron beam irradiation unit 7002, so that the charged electron beam irradiation space 7030 can maintain a very low pressure when the inside of the vacuum chamber C is at a high pressure. That is, the annular portion 7026 of the differential exhaust mechanism 7025 installed around the charged electron beam irradiation portion 7002 forms a minute gap (a few micrometers to several hundreds of micrometers) between the underside (the surface on the side of the test piece S) and the test piece. 7040, the housing 7014 is positioned, and an annular groove 7027 is formed on the lower surface thereof. The annular groove 7027 is connected to a vacuum pump (not shown) by an exhaust pipe 7028. Therefore, the minute gap 7040 is exhausted through the annular groove 7027 and the exhaust port 7028, and when gas molecules are to be intruded from the vacuum chamber C to the space 7030 surrounded by the annular portion 7026, they are also exhausted. Thereby, the charged electron beam irradiation space 7030 can be kept at a low pressure, so that the charged electron beam can be irradiated without any problem. The annular groove can form a double structure or three configurations according to the pressure in the chamber and the pressure in the charged electron irradiation space 7030. The high pressure gas supplied to the hydrostatic bearing is generally dry nitrogen. If possible, it is best to use a higher purity inert gas. If impurities such as moisture or oil are contained in the gas, the impurities are attached to the inner surface of the casing forming the vacuum chamber and the surface of the workpiece forming part to deteriorate the degree of vacuum, and are attached to the surface of the test piece to be charged. The degree of vacuum of the electron beam irradiation space is deteriorated. The test piece S is usually not placed directly on the X stage, but is placed on a test piece that has a function of changing the position of the XY table 7003 by being held in a detachable position on the XY stage 7003. The presence or absence and construction thereof are not the gist of the present invention 143 (amendment) 312765 1288424 - and the description thereof is hereby incorporated. Since the charging electron beam device 7000 can directly use the table mechanism of the hydrostatic bearing used in the atmosphere, it is possible to use the same high-precision XY table for the high-precision stage used in the atmosphere such as the exposure device. The cost and size of the XY work station for the charged electron beam device. The structure and arrangement of the static pressure guiding portion and the actuator (linear motor) described above are only one embodiment, and any electrostatic guiding portion and actuator that can be used in the atmosphere can be used. Fig. 56 shows an example of numerical values of the size of the annular groove formed in the annular portion 7026 of the differential exhaust portion 7025. The annular portion 7026 of Fig. 56 has annular grooves 7027a and 7027b of a double structure in which the radial direction is spaced apart, and each of them is for discharging TMP and DP. The flow rate of the high-pressure gas supplied to the hydrostatic bearing is usually about 20 L/min (at atmospheric pressure). It is assumed that the pressure in the vacuum chamber is about 160 Pa (about 1.2 Torr) when the vacuum chamber C is evacuated by a dry pump having an inner diameter of 50 mm and a length of 2 m and an exhaust speed of 2000 OL/min. At this time, the size of the annular portion 7026 and the annular groove of the differential venting mechanism portion is as shown in Fig. 56, and the pressure in the charged electron beam irradiation space 7030 can be 10 - 4 Pa (1 (T6 Torr). Fig. 57 is a view showing a charging electron beam device 7000 according to a twenty-third embodiment of the present invention. The vacuum chamber C formed by the casing 7014 is connected to the dry vacuum pump 7053 via the vacuum pipes 7074 and 7075. The ring of the differential exhaust mechanism 7025 The groove 7027 is connected to the exhaust port 7028 via a vacuum pipe 7070 to be connected to the ultra high vacuum pump turbo molecular pump 7051. In the lens barrel 7001 144 (revision page) 312765 1288424 - the vacuum is connected to the exhaust port 7018. The pipe 7071 is connected to the turbo molecular pump 7052. The turbine molecular pumps 7051 and 7052 are connected to the dry vacuum pump 7053 by vacuum piping 7〇72, 7〇73. The turbo molecular pump in the charged electron beam device 7000 of Fig. 57 The vacuum pump for the rough pump and the vacuum chamber is used as a dry vacuum pump. 'But the flow rate of the high pressure gas supplied to the hydrostatic bearing of the χγ table, the volume of the vacuum chamber, and the inside can also be considered. Surface area, inner diameter and length of vacuum piping, etc. The dry vacuum pump of the other system is used for exhausting. The static pressure bearing of the XY stage 7003 supplies high-purity inert gas (N2 gas, Ar gas, etc.) through the hoses 7021 and 7022. The gas ejected by the hydrostatic bearing The molecules are diffused in the vacuum chamber, and are exhausted by the dry vacuum pump 7053 through the exhaust ports 7019, 7020a, 7020b. The special gas molecules that invade the differential exhaust mechanism and the f electron beam irradiation space are from the ring sample 7 〇 2 7 or the same as the end of the 7001 is attracted 'exhaust through the exhaust ports γ 〇 28 and 7 〇 18 by the turbo molecular pump 7051 and 7052, discharged by the turbine molecular fruit and then exhausted by the dry vacuum pump 7053. The high-purity inert gas supplied to the hydrostatic bearing is collected and discharged by the dry vacuum pump. On the one hand, the exhaust port of the dry vacuum pump 7053 is connected to the compressor 7054 via the pipe 7〇76, and the exhaust port of the compressor 7054 is connected via the pipe 7 〇77, 7〇78, 7079 and regulators (regUiat〇r) 7061, 7062 are connected to hoses 7〇21, 7022. Therefore, the high-purity inert gas discharged by dry vacuum pump 7053 is repressurized by compressor 7054 and Adjusted to the appropriate pressure by the voltage regulators 7061, 7062 After that, it is supplied to the hydrostatic bearing of the χγ台. (Revision page) 312765 145 1288424 Gas supplied to the hydrostatic bearing, as described above, is required to be as high-purity as possible without moisture and oil, so the turbomolecular pump The dry pump and the compressor are required to have a structure in which no water and oil are mixed in the gas flow path, and a cold interceptor and a filter 7076 are provided on the way of the discharge side pipe 7077 of the compressor to intercept the water mixed in the circulating gas. It is also effective to supply the static pressure bearing after the impurities such as the oil and the oil. As described above, the high-purity inert gas can be recycled and reused, so that high-purity non-soil gas can be saved, and no inert gas can be discharged from the plant in which the device is installed, regardless of the occurrence of suffocation due to the inert gas. accident. A high-purity inert gas supply source 7063 is connected to the circulation piping system, and when the gas starts to circulate, the entire circulation system of the vacuum chamber C, the vacuum piping 7070 to 7075, and the pressure side piping 7076 to 7080 is filled with a high-purity inert gas. And supplement it when the gas flow in the cycle is reduced for some reason. Further, if the dry vacuum pump 7053 has a function of being compressed to a pressure higher than atmospheric pressure, the dry vacuum pump 7053 and the compressor 7054 can be used by one pump. The ultra-high vacuum pump used for the exhaust of the lens barrel can also use an ion pump and a getter pump instead of the turbo molecular pump. For dry vacuum pumps, other types of dry pumps such as diaphragm dry pumps can also be used. Figure 58 is a diagram showing a charged electronic wire device 7100 of a twenty-fourth embodiment of the present invention. The charging electron beam device 7100 includes an optical system 7160 and a detector 7180 that can be used in the charging electron beam device 7000 of Fig. 57. The optical system 7160 includes a primary optical system 7161 that irradiates a charged electron beam on the test piece S placed on the stage 7103, and a secondary optical system 7171 〇 146 (corrected page) 312765 1288424 in which secondary electrons emitted from the test piece are emitted. The optical system 7161 of Fig. 5 is provided with an electron gun 7162 that discharges the charged electron beam, a lens system 7163 and 7164 formed by a two-stage electrostatic lens that converges the charged electron beam discharged from the electron gun 7162, and a deflector 7165 to make the charged electron The optical axis of the line is a Wien filter that is perpendicular to the surface of the object, that is, the ExB separator 7166, and the lens system 7167, 7168 formed by the two-stage electrostatic lens. These are electrons as shown in Fig. 58. Grab the 7162 as the uppermost part of the optical axis of the charged electron line to the surface of the test piece s (the test piece surface). The vertical line is inclined. The ExB deflector 7166 is provided with an electrode 7661 and a magnet 7662. A human optical aperture 7171 is an optical system that receives secondary electrons emitted from the test piece S, and has a lens system 7172, 7173 formed by a two-stage electrostatic lens disposed on the upper side of the primary optical system deflector 7166. . The detector 718 detects the secondary electrons incident by the secondary optics 7171. The structures and functions of the respective components of the optical system 716A and the detection device 7180 are the same as those of the conventional technology, and the description thereof will be omitted. The charged electron beam discharged from the electron gun 7162 is normalized by the square opening of the electron gun, and then reduced by a lens system 7163 and 7164. The optical axis is adjusted by the polarizer 7165 and the image is formed on the side of the center of the ExB deflector 7166. 1·25mm square. The electric field and the magnetic field in the plane perpendicular to the normal of the member are orthogonal to each other. When the energy relationship between the electric field and the electron meets a predetermined condition, the electron is straight forward, and the electric field is dependent on the electric field. The relationship between the magnetic field and the energy of the electrons is biased; In order to set the direction of the detector 7180 so that the charged electron beam from the electron gun is deflected perpendicularly into the test piece s and the test piece s is discharged (correction page) 312765 147 1288424, the direction of the detector 7180 The formed electron beam is projected to the test piece S by 1/5 reduction by the lens systems 7167 and 7168. The secondary electrons with the image data released from the test piece S are enlarged by the lens systems 7167, 7168, and 7172, 7173, and the secondary electron image is formed by the detector 7180. In the four-stage enlarged lens, the lens systems 7167 and 7168 form a symmetric double lens, and the lens systems 7172 and 7173 also form a symmetric double lens, so that there is no distortion. The charged electron beam device 7000 of Figs. 55 to 58 can be applied to the method of fabricating the semiconductor device of Figs. 12 and 13. In other words, when the charging electron beam device 7000 is used for the wafer inspection step of Fig. 12 or the exposure process of Fig. 13, the inspection or exposure of the fine pattern can be performed with high precision, so that the yield of the product can be improved and the product can be prevented. Shipment of defective products. The following effects can be achieved by the charged electronic wire device 7000 according to Figs. 55 to 58. (1) It is possible to carry out the stability of the test piece on the workbench for the worktable of the same structure of the hydrostatic bearing type that is generally used in the atmosphere (the work platform without the static pressure bearing support of the differential exhaust mechanism) Charged electronic wire processing. (2) It is possible to suppress the influence of the charged electron beam irradiation field on the degree of vacuum to the minimum limit, and to stabilize the treatment of the test piece by the charged electron beam. (3) It is possible to provide a high-precision inspection device with a high degree of vacuum and a vacuum in the field of charged electron beam irradiation at a low cost. (4) It is possible to determine the position of the work station at a low cost and to determine the high-precision and vacuum of the charged electron beam. (5) Since the position of the workbench is determined to be high-precision, and the charged electronic wire illuminator 148 (Revision page) 3Π765 1288424 - The semiconductor in which the vacuum in the field of radiation is made to be stable, a semiconductor circuit can be fabricated. Fig. 59 is a view showing a schematic configuration of an electron beam apparatus 8000 according to a twenty-fifth embodiment of the present invention. As shown, the electron beams discharged from the electron gun 8 001 are converged by the capacitor lens 8002 and overlapped at a point 8004. Below the capacitor lens 8002, a first plurality of opening plates 8003 having a plurality of openings 8003' are formed, and a plurality of primary electron lines are formed therefrom. The primary electron lines formed by the first plurality of aperture plates are each reduced by the reduction lens 8005 at a point 8015, and then focused on the test piece 8008 by the objective lens 8007. The plurality of primary electron beams emitted from the first plurality of aperture plates 8003 are deflected by a deflector disposed between the reduction lens 8005 and the objective lens 8007 to simultaneously scan at different positions on the surface of the test piece 8008. In order to eliminate the influence of the reduction of the curvature of the lens 8005 and the object lens 8007, as shown in FIG. 60, the plurality of openings 8003' on the plurality of aperture plates 8003 are disposed on the same circumference of the plurality of aperture plates 8003. The center projections are equally spaced on the X axis. In the electronic wire device 8000 of the twenty-fifth embodiment of the present invention, the secondary electron beam is discharged from a plurality of points on the test piece 8008 irradiated by the plurality of electron beams, and is attracted by the electric field of the object lens 8007 to be a fine line. The bias of the ExB separator 8006 is incident on the secondary optics. The secondary electron image is closer to point 8016 of object lens 8007 than point 8015. The reason is that each electron beam has 500 eV energy on the test piece surface, while the secondary electron line has only a few eF energy. The secondary optics includes enlarged lenses 8009 and 8010, and the plurality of open-ended detectors are formed by the plurality of open junctions of the second plurality of aperture plates 8〇11 through the enlarged 149 (correction page) 312765 1288424 lenses 8009, 8010. 8012. The positional relationship between the plurality of openings of the second plurality of open plates 8011 provided before the detectors 8 and 12 and the plurality of openings 8003 of the plurality of open plates 8003 is one-to-one correspondence. Each detector 8012 converts the detected secondary electron beam into an electrical signal indicative of its intensity. The electric signals outputted from the respective detectors are amplified by the amplifiers 8013, input to the imaging processing unit 8〇14, and converted into image data. Since the scanning signal for biasing the primary electron beam is input to the imaging processing unit 8014, the imaging processing unit 8014 can display an image indicating the surface of the test piece 8〇〇8. By comparing the image with the standard pattern, the defect of the test piece 8〇〇8 can be inspected, and the image to be measured of the test piece 8008 is moved closer to the optical axis of the optical system by image coincidence, and the line scan is performed to take out the line evaluation signal. The line width of the graphic on the test piece 8008 can be determined by appropriate correction. 'When the primary electron beam passing through the opening of the first plurality of apertured plates 8003 is concentrated on the surface of the test piece, and the secondary electron beam junction detector 8012 is discharged from the test piece, it is particularly necessary to consider The distortion caused by one optical system, the curvature of field and the non-point of view are the least affected. Secondly, the relationship between the interval of the complex-sub-electron lines and the secondary optical system can eliminate the crosstalk between the complex electronic lines by making the interval of the secondary electron lines away from the difference of the secondary optical system. The optical system described above is a state in which a plurality of electron lines are formed by a plurality of openings of an electron beam of a single electron gun. However, a plurality of electrons may be provided, or an electron is trapped in the radio field of the cathode. Fig. 61 shows the analog pattern of the objective lens 8〇〇7 of Fig. 59. (Revision page) 312765 150 1288424 8021 denotes the optical axis, 8022 is 0V (volts) connected to the upper electrode of the lens 8007, 8023 is the center electrode of the objective lens to which the high voltage is applied, and 8024 is the ground voltage. The lower electrode of the lens and the test piece surface 8025 were set at -4000V. 8026, 8027, 8028 are insulator spacers that hold the electrodes. Various changes are made to the position where the overlapping lens 8005 is formed, and the image of the complex electron beam of z=0 mm is focused on the test piece surface 8025 by changing the center electrode of the objective lens, and the difference generated by the time is calculated. . Fig. 62 is a graph showing the results of the above simulation. In Fig. 62, the overlapping position (mm) of the change is the horizontal axis, and the difference value corresponding to the difference is the vertical axis. The center electrode 8023 (Fig. 61) is provided with z = 144 mm. Further, the complex electron beam has an r position of 50 // m and an opening half angle of 5 mrad. In the graph of Fig. 62, the curve 8031 is the image difference, the 8032 is the magnification of the magnification, the 8033 is the non-point difference, the 8034 is the axis color, the 8035 is the image curvature, the 8036 is the distortion, and the 8037 is the blur. degree. When the complex electron line is on the circumference centered on the optical axis, the image plane curvature 8035 is zero, so the blur degree 8037 is substantially determined by the magnification color difference 8032 and the axis color difference 8034. Here, the energy amplitude of the electron gun is set to 5 eV. When the overlap position is set to 140 ,, the magnification color difference 8032 is reduced to a negligible value. That is, according to the above simulation, it is understood that the overlapping position where the front lens is formed is formed closer to the electron gun side than the center electrode position (144 mm) of the alignment lens. The electronic wire device 8000 of the twenty-fifth embodiment of Fig. 59 can be used for wafer evaluation of the semiconductor device manufacturing process of Figs. 12 and 13 . When the electronic wire device of Fig. 59 to Fig. 62 is used for the wafer inspection process of Fig. 12, the semiconductor device having the fine pattern can also be inspected with good productivity 151 (correction page) 3Π765 1288424 Inspection is also possible, so it can improve the yield of products and prevent the shipment of defective products. According to the electronic wire device 8_ of the twenty-fifth embodiment of Fig. 59, the following effects can be achieved. (1) High-yield wafer evaluation can be performed by electronic wires by using a plurality of electronic wires. (2) The color difference of the magnification which becomes a problem when the complex electronic line is increased in radius can be reduced to the extent that it is not a problem. Figure f 64 is a horizontal cross-sectional view showing the detailed structure of the electron beam deflector 90 which can be used in the electronic wire device of the present invention. Figure 65 shows the side of the line A-A of Figure 64. As shown in Fig. 64, the electron beam deflector 9 is a structure in which the electric field and the magnetic field are straight fathers in a plane perpendicular to the optical axis of the photographic projection optical portion, that is, the ExB structure. The electric field E here is generated by the electrodes 9Ga, _ having a concave curved surface. The electrodes 9Qa and the electric field generated by the electrodes are controlled by the control units 93a and 93b. On the one hand, the electrodes 90a and 90b for generating electric field are in an orthogonal state to configure the electromagnetic wires... and (10) to generate magnetic %. The electrodes 9a and 90b for generating electricity are formed into point symmetry (concentric type). In order to increase the uniformity of the magnetic field, pole-pieces having parallel flat plates are formed to form a magnetic circuit. Figure 65 shows the electronic line motion along the longitudinal section of line A_A. The irradiated electron beams 91a and 91b are incident on the surface of the test piece by the electric field generated by the electrode and the electric field and the magnetic field generated by the electromagnetic coils 94 and 91b. The position and angle of the electron beam 91a and 91b to the electron beam deflecting portion 9 (correction page) 312765 152 1288424 = the energy of the electron is determined. Further, each control unit is fine, 9 north ^4a, 94b controls the electric field generated by the electrode, (10), and the magnetic field generated by the electromagnetic coil 91 a, 91 b to make the electric field and the magnetic field condition, then the second = electron is biased toward the electron line The portion 90 is directly incident on the photographic projection optical portion. The above v is the velocity of electrons (m/s), B is the magnetic field (7), and ^ is the amount of charge (c) 'E is the electric field (v/m). Fig. 66 is a plan view showing the method of irradiating the primary electron beam of the present invention. As shown in Fig. 66, the primary electron line 1 is formed by four electronic lines 1 , 102, 103, and 104. Each electronic line scans a 5 Mm amplitude. · When the primary electronic line 1〇1 is taken as an example, the primary electronic line ι〇ι is initially at the left end, and is scanned to the right end on the substrate W (test piece) having the pattern 107, and immediately reaches the right end and then quickly returns to the left end, and then thereafter Scan in the right direction. The moving direction of the stage on which the substrate w is placed is approximately perpendicular to the scanning direction of the primary electron line. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the main configuration of an inspection apparatus according to a first embodiment of the present invention, as seen along line A-A of Fig. 2. The second chart is not a plan view of the main structure of the inspection apparatus of Fig. 1, and is shown along the β-Β line of Fig. 1. Figure 3 shows the edge of the small-environment space device of Figure 1 (:-(;: a cross-sectional view of the line, Figure 3 shows a side view of another form of small-scale environmental space device. Figure 4 shows the load room of the brother 1 , which is seen along the d-d line of Figure 1. 'Fig. 5 and Fig. 5 show an enlarged view of the rack. The μ 153 (correction page) 312765 1288424 is a side view, and the 5B is a side view. The cross-sectional view 1 and the sixth and sixth FIGS. 6A and 6B of the E_E line in Fig. 5A show a second modification of the method of supporting the main casing. Fig. 7 is a view showing the second embodiment of the present invention used in the inspection apparatus of Fig. 1. A schematic configuration diagram of an electro-optical device. Fig. 8 is a view showing an opening positional relationship of a plurality of open plates used in an optical system of the electro-optical device of Fig. 7. Fig. 10A diagram of a potential application mechanism. 10B is a view for explaining an electronic wire calibration mechanism, FIG. 10A is a side view, and FIG. 1B is a plan view. FIG. 11 is a schematic view showing a crystal excavation controller device. FIG. 12 is a view showing the present invention. Flowchart of one embodiment of a semiconductor device manufacturing method Fig. 13 is a flow chart showing a photolithography process at the core of the wafer manufacturing process of Fig. 12. Fig. 14A is a schematic view showing the optical system of the electronic wire device according to the third embodiment of the present invention. Fig. 15 is a view showing an enlarged view of an image formed by a plurality of electron lines. Fig. 15 is a view showing a secondary optical system and an opening angle according to a third embodiment of the present invention. Fig. 16 is a view showing a difference between the surface of the test piece and the opening half angle ai Figure 17 is a top view of a complex emitter, and Figure 17 is a cross-sectional view along line 17 of the line. 154 (Revision page) 312765 1288424 The 18A and 18B diagrams show the vacuum chamber of a conventional charged electronic line device. And XY table, Fig. 18A is a front view, and Fig. 18B is a side view. Fig. 19 is a schematic perspective view of an exhaust mechanism used in the XY table of Figs. 18A and 18B. Fig. 20A and 20B The front view and the side view of the vacuum chamber and the XY table of the charged electron beam device according to the fourth embodiment of the present invention are shown in Fig. 21. Fig. 21 is a view showing the vacuum chamber and the XY table of the charged electron beam device according to the fifth embodiment of the present invention. Figure 22 shows the sixth embodiment of the present invention. FIG. 23 shows a vacuum chamber and an XY station of the charged electronic line device according to the seventh embodiment of the present invention. The second figure shows the eighth implementation of the present invention. Example of the charged electron beam device vacuum chamber and XY station. Fig. 25 is a schematic view showing an optical system and a detection system according to a ninth embodiment of the present invention provided in the lens barrel of the embodiment of Figs. 18 to 24. Fig. 26 is a view showing a schematic configuration of a defect inspection device according to a first embodiment of the present invention. Fig. 27 is a view showing an example of a plurality of inspection images and reference images obtained by the defect inspection device of Fig. 26. Fig. 28 is a flow chart showing the main routine for performing wafer inspection by the defect inspection device of Fig. 26. Fig. 29 is a detailed flowchart showing the sub-step of the plurality of inspected image data obtaining steps (step 3304) in the flowchart of Fig. 28. 155 (Revision page) 312765 1288424: Fig. 30 shows a detailed flowchart of the sub-step of the comparison process (step 3308) of Fig. 28. Fig. 31 is a view showing a specific configuration example of the detector of the defect inspection device of Fig. 26. Fig. 32 shows a plurality of inspected fields which are partially overlapped on the surface of the semiconductor wafer and are mutually offset by a conceptual representation. Figure 33 is a view showing the configuration of a scanning type electron beam device constituting the defect inspection device of the eleventh embodiment of the present invention. Fig. 34 is a view showing the arrangement of the main components of the electronic wire device of the twelfth embodiment of the invention. Fig. 35A is a top plan view of the opening plate of the device of Fig. 34, and Fig. 35B and Fig. 35C are plan views showing the opening arrangement. Fig. 36 is a view showing the arrangement of the primary electron beam irradiation dots formed on the surface of the test piece by the electron beam device of Fig. 34; Figure 37 is a schematic view showing the configuration of an electronic wire device according to a thirteenth embodiment of the present invention. Fig. 38 is a schematic plan view showing an optical system of the electronic wire device of the first embodiment of the present invention. Fig. 39 is a plan view showing an example of a plate in which a plurality of openings are used in the electronic wire device of Fig. 38. Fig. 40 is a plan view showing an example of a detector opening plate used in the electronic wire device of Fig. 38. Fig. 41A and Fig. 41B are views showing another example of the panel of the plurality of openings for use in the electronic wire of Fig. 38. (Revision page) 312765 156 I288424 • ^ Fig. 42 is a view showing the optical system configuration of the electronic wire device according to the fifteenth embodiment of the present invention. Fig. 43 is a plan view showing the state in which the optical system of the electron beam device of Fig. 42 is arranged in parallel in two rows and in parallel. * Fig. 44A is a view showing the outline of an electronic wire device according to a sixteenth embodiment of the present invention;

Fig. 44B is a plan view showing an opening of a plurality of aperture plates, and Fig. 44C is a configuration diagram of a structure for applying a voltage to an objective lens. Fig. 45A is a graph showing the voltage applied to the objective lens and the electric signal above the towel field, and Fig. 45B is an explanatory view showing the rising amplitude of the electrical signal. Fig. 46 is a view showing a schematic configuration of an optical system of an electronic wire device according to a seventeenth embodiment of the present invention. Fig. 47 is a plan view showing the opening of the i-th opening plate and the opening of the second opening plate of the electronic wire device of Fig. 16; Fig. 48 is a view showing the schematic configuration of an electronic wire device according to an eighteenth embodiment of the present invention. Fig. 49 is a plan view showing the positional relationship of the opening of the plate of the plurality of openings used in the primary optical system of the electronic wire device of Fig. 48; Fig. 50A is an explanatory view showing an evaluation portion and an evaluation method of charging, and Fig. 50B is a comparison chart showing a comparison signal intensity. Figure 51 is a cross-sectional view showing the Εχβ separator of the nineteenth embodiment of the present invention orthogonal to the optical axis. Figure 52 is a cross-sectional view showing the Εχβ separator of the twentieth embodiment of the present invention orthogonal to the optical axis. Fig. 53 is a view showing a schematic configuration of a defect inspection apparatus for a wafer according to a twenty-first embodiment of the present invention, which is applicable to the ΕχΒ separator (modified page) of Fig. 51 or Fig. 52 (modified page) 312765 157 1288424, and Fig. 53B shows a plurality of aperture plates. The positional relationship. Fig. 54 is a view showing the configuration of an ExB energy filter of a conventional example. Fig. 55 is a sectional view showing the vacuum chamber and the XY table of the charged electron beam device of the twenty-second embodiment of the present invention. Fig. 56 is a view showing an example of an operation venting mechanism provided in the charging electron beam device of Fig. 55. Fig. 57 is a view showing a gas circulation piping system of the charged electric wire device of Fig. 55 of the twenty-third embodiment of the present invention. Figure 58 is a view showing a schematic configuration of an optical system and a detecting frame of a charged electron beam device according to a twenty-fourth embodiment of the present invention. Fig. 59 is a view showing the schematic configuration of an electronic wire device according to a twenty-fifth embodiment of the present invention. Figure 60 is a plan view showing an opening plate used in the electronic wire device of Figure 58. Fig. 61 is a view showing the simulation of the objective lens of the electronic wire device of the present invention. Fig. 62 is a graph showing the simulation result of Fig. 61. Fig. 63 is a flow chart showing the inspection sequence. Fig. 64 is a plan sectional view showing the electron beam deflector. Brother 6 5 chart is not the electronic line biased towards the electronic state of the fasting side view. Fig. 66 is a plan view showing the description of the primary electron beam irradiation method of the present invention. _ Figure 67 shows the inspection flow chart of the inspection sequence. 158 (Revision page) 312765 1288424 [Description of main components] 1 Semiconductor inspection device 10 Retainer 11 Elevator 12, 615 Elevating mechanism 20 Small environmental chamber 21 Small environmental space 22, 2008, 7014 Housing 23 Gas circulation device 24 Substrate transportation Box 25 Pre-adjuster 27, 45, 46, shutter unit 30 Main housing 31 Working chamber 32, 32a, 32b, 43 Housing body 33, 33a, 33b Housing support device 36, 36b Frame 37, 37b Anti-vibration device 40 loading housing 40b loading chamber 41 first loading chamber 42 second loading chamber 47 wafer holder 49b hanging lower 50, 2003, 2007, 3004, 4420, 5040, 7005, 7103 work bench 50a, 50b, 50e, 50f, 60a, 60b, 60f distance 51 fixed table 53, 7004 X table 54 rotary table 55, 5041 holding portion 60 loader 63 brother 2 transport unit 70 electro-optical device 71, 2001, 4426, 7001 lens barrel 72, 2061, 4310, 4510, 5010, 7161 - Sub-electron optics 74, 2071, 4009, 4330, 4530, 5020, 7171 Secondary electro-optical system 7 6, 5 0 3 0 detection 糸 81 Pre-charging section 83 Potential application mechanism 85 Electron-wire calibration mechanism 87 Adjusting the control unit (correction page) 312765 159 1288424 _ 90a, 90b, 2661, 4322, 6001, 7661 Electrode 91a, 91b, 6004, 6005 Electromagnetic coil 93a, 93b, 3016 Control unit 101, 102, 103, 104 Electronic line 107 Graphic 221, 322, 432 Top wall 222, 301, 321, 321a, 321b, 431 bottom wall 223, 323, 433 peripheral wall 225, 226, 325, 435, 436, 437 inlet 231 gas supply 232 recovery pipe 233, 243, 244 conduit 241 suction port 242 blower 271, 451 sealing material 272, 452, 461 door 273, 453 drive unit 331, 336, 336b frame structure 331a rectangular steel plate 337b vertical frame 434 partition wall 471 substrate 472 pillar 473, 474, 2029 support portion 501 box body 502 substrate carry-in entry 503 cover body 505 ULPA filter 506 Chemical filter 507 Fan motor 521, 531 Servo motor 522, 532 Encoder 541 Mounting surface 551 Wafer mounting surface 611 Drive unit 612 First transport unit 613 Shaft 616 Holding devices 721, 2062, 3001, 3061, 4001, 4101, 4201, 4311,4401,4511,5011, 6021,7162, 8001 Electron gun 160 (amendment page) 3Π765 1288424 722,1004, 3062, 4002, 4103, 4202, 4402, 5012, 6022, 8002 Container lenses 723a, 743a, 4004, 4014, 4051, 4052, 4061, 4062, 4105a to 4105d, 4123a to 4123d, 4204, 4221 to 4224, 4433, 4443, 5131, 5231, 5232, 8003' openings 723, 4003, 4050 , 4060, 4105, 4107, 4123, 4203, 4211, 4313, 4332, 4403, 4411, 4514, 4534, 5013, 5023, 6023, 6031, 8003, 8011 open plates 724, 3065, 4005, 4205, 4405, 5014, 6025, 8005 reduction lenses 725, 1009, 3066, 4006, 4115, 4206, 4317, 4320, 4406, 4518, 5015, 6020, 6026, 6040, 7167, 7168, 8006 ExB separators 726, 1008, 3010, 3067, 4007 , 4207, 4407, 5016, 6027, 8007 objective lens 727, 2065, 3080, 4012, 4013, 4117, 4121, 4417, 4419, 5017, 5018, 6039, 7165 deflector 741, 742, 3069, 3070, 4119, 4209, 4210, 4409, 4410, 5021, 5022, 6029, 6030, 8009, 8010 Enlarged lens 743 Detection plates 761, 1014, 1015, 1016, 2080, 3007, 3072, 4212, 5031, 6032, 7180, 8012 Detector

762 A/D converter 763, 3074, 4214, 4414, 8014 765, 833, 873, 5061 monitor 831 voltage application device 834, 5062 operator 851, 852 Faraday cup 872 CCD image processing unit 811, 7002 charged particle irradiation Section 832 Voltage Determination System 835, 5063 CPU 871 Optical Microscope 1000, 4000, 4100, 4200, 4300, 4400, 4500, 5000, 5001, 6000, 8000 Electronics, Line Devices 161 (Revision Page) 312765 1288424 1001, 1002, 1003 Plural Emitter 1005 image surface 1006, 1011, 1012, 4109, 4111 lens 1007 open twist 1010, 8025 test piece surface 1013 detection surface 1017, 1018, 4314, 4319, 4322, 4517 electrostatic deflector 1021 Si base 1022 Mo emitter 1023 Au extraction electrode 1024 Si3N4 insulation film 2000, 2100, 2200, 2300, 2400, 2500, 7000, 7100 charged electronic line equipment 2002 Irradiation Department 2003, 5042, 7003 XY Table 2004 Test piece table 2004-1 Ring part 2005 Y Directional movable part 2006 X-direction movable part 2006a, 2007a Guide surface 2011-1, 2011-2 Vacuum exhaust passage 2009, 2009a, 2009b, 7009a, 7009b, 7010a, 7010b, 7011a, 7011b Hydrostatic bearing 2010, 2011, 2023 , 7019, 7020a, 7020b, 7070, 7071, 7072, 7073, 7074, 7075, 7076, 7077, 7078, 7079, 7080 Vacuum piping 2012, 2014 Spacer 2013, 2015, 2024 Space 2016, 2019, 2026 Spacer 2017, 2018 Differential vent 2020 Circumferential groove 2021 Exhaust path 2022 Internal space 2027, 2028 Parts 2050, 2051 Retracting part 2052, 7040 micro gap 2060, 7160 Optical system 2063, 2064, 2067, 2068, 2072, 2073, 7163, 7164, 7172, 7173, 7167, 7168 Lens system 2066, 3003, 7166 ExB deflector 2662, 7662 Magnet 162 (correction page) 312765 1288424 3052 Fluorescent surface 3056 Camera sensor 3063 1st plural opening plates 3064, 3075, 3076, 4216, 4404, 4415, 4416, 6024, 6035, 6036, 8004, 3000 Defect Inspection Device 3002, 3006, 4312, 4513, 4516 3005, 6028 Wafer 3011 Deflection Electrode 3013 Reference Image Memory

3015 CRT 3 018 Input 3030a, 3032 Portrait 3032b Rectangular Area 3036 Reference Image 8015, 8016 Point 3068, 4113, 4208, 4408, 8008 3071 2nd Complex Opening Plates 3073, 4213, 5032, 6033, 8013 3100 Charged Electronic Irradiation 4011 Secondary electron detector 4108a, 4108c overlap position 4217 blanking deflector electrostatic lens 3009 defect inspection program 3012 deflection controller 3014 control unit body 3017 primary electronic image 3030 inspection image 3030k, 3032a inspection field 3034 wafer inspection Surface 3050 complex channel plate 3054 relay optical system sample amplifier 4010, 4125 detector hole group 4020, 4218, 5019 axisymmetric electrode 4215 biased to the main surface 4220 square 4313a~4313e, 4332a~4332e, 4514a~4514i, 4534a~4534i Small hole 4315, 4515, 4532 open ring 4316, 4318 electrostatic intermediate lens 4321, 4519 electrostatic object lens 4331, 4531, 4533 electrostatic expansion lens 163 (correction page) 312765 1288424 4340, 4540 detection device 4412, 4415 electronic detector 4421 non Point correction lens 4428, 4429 power supply 4430 rising width detecting portion 4512 convex portion 4541 injection detector 5033 artifact formation 5050 Deceleration voltage application device 5060 Deceleration voltage determination system 5100 Wafer 5102 Memory unit boundary 6001, 6001' Magnetic plate 6002 Insulation spacer 6003 Vacuum wall 6006 Outer layer 6007 Part 6034 Image processing device 7006 Bench 7007a, 7007b Y direction guide Section 7008a, 7008b X-direction guide 7012 Linear motor 7018 Exhaust port 7021, 7022 Hose 7025 Differential exhaust mechanism 7026 Annular portion 7027, 7027a, 7027b Annular groove 7028 Exhaust pipe 7030 Charged electron beam irradiation space 7051 ,7052 Turbo Molecular Fruit 7053 Vacuum Pump 7054 Compressor 7061, 7062 Regulator 7063 Southern Purity Inactive Gas Supply Source 7165 Polarizer 8021 Optical Axis 8022 Upper Electrode 8023 Central Electrode 8024 Lower Electrode 8026, 8027, 8028 Insulator Spacer 8032 Magnification color difference 8033 non-point error 8034 axis color difference 8035 image surface curvature 8036 distortion 8037 ambiguity (correction page) 312765 164

Claims (1)

1288424 Patent Application No. 901 15558 Application for Revision of Patent Scope (January 12, 1996) 1 · A heart-checking device' is an inspection device that irradiates charged objects on an inspection object to inspect the inspection object (7, 700), having: a working chamber for inspecting an inspection object that can be controlled in a vacuum environment; a potential application mechanism for applying a potential to the inspection object disposed in the working chamber; generating an electron beam (beam) An electron beam generating mechanism for charging particles; irradiating the plurality of electron beams to an inspection object held in the working chamber, detecting secondary charged particles generated by the inspection object, and introducing the secondary charged particles into the electro-optical system of the image processing system; The image processing system for forming an image of the secondary charged particles; and the data processing system for displaying or storing the state data of the inspection object according to the output of the image processing system, wherein the electron optical system has an object lens and an ExB separation a secondary charged particle that is emitted by the irradiation of the electron beam by using the aforementioned objective lens And using the speed Εχβ through a separator, and the more damage-containing for projecting an image of the secondary charged particles at least some of the electronic zoom lens optical system, and a plurality of secondary charged particles detected as the detector. The inspection device 'sends a charged particle beam to the test piece, and then (Revised) 312765 1288424. The inspection device (surface) for detecting the secondary charged particles emitted by the test piece has (4) the number of times - the sub-band f (4) At least one secondary optical system, wherein the secondary charged particles are introduced into at least one secondary optical system of at least one of the detectors, and wherein the plurality of secondary charged particle beams are irradiated to each other from the foregoing two The distance decomposition of the secondary optics can be the location of departure. 3. The apparatus according to the second aspect of the invention, wherein the aforesaid-sub-optical system has a function of scanning the charged particle beam at a wider interval than the irradiation position of the plurality of charged particle beams. 4. The inspection of the second item of the patent application scope is applied, wherein an electric field for accelerating the secondary strip 2 sub-line is applied between the first-stage lens of the second pre-school and the test piece surface, so that the test piece surface The secondary charged particles discharged at least at an angle smaller than 45 degrees pass through the secondary optical system. The inspection apparatus of the second application of the patent application, wherein the plurality of bands: the particle beam is approximately perpendicular to the injection test piece surface. The secondary charged particles are separated from the primary optical system by the deflection of the separator. .: The inspection device for applying for the patent (4), item 2 to item 5, is used to perform defect inspection on the device. 7: The type of inspection device is a secondary charged optical system that irradiates a plurality of charged particles on the surface of the test piece, and a secondary charged particle that is emitted from each of the plurality of particles of the surface formed on the surface of the test piece. Acceleration and bundling by the electric field applied between the lens and the test piece surface, and then by the pair (revision) 312765 2 1288424 raw mechanism side - dirty &quot;, sub-self-order optical system separation, iron after, ¥ In-: an inspection device (10) consisting of a secondary electron optical plum of a human electronic detector, characterized in that: "The point of formation is 2 = the system is to make the irradiation point of the first charged particle on the surface The formation of the secondary element 'and the points of the projection of the illumination point for the one-axis direction are equally spaced. 8. The inspection apparatus of claim 7, wherein the plurality of charged particle lines are formed in the second dimension on the test piece surface The maximum value of the distance between any two irradiation points of the upper plurality of irradiation points is minimized. 9. An inspection device having a primary charged particle beam irradiation of a plurality of charged particle lines on the surface of the test piece And a secondary charged particle detector for detecting the secondary charged particles respectively emitted from the plurality of charged particle beam irradiation spots formed on the surface of the test piece, and moving the test piece to a predetermined field of the test piece surface The inspection device (4000) for detecting the secondary charged particles is characterized in that the primary charged particle beam irradiation device arranges the primary charged particle beam irradiation point so that the moving direction of the test piece is N lines, and the moving direction is The right-angle direction is a queue, and the points projected toward the axis of the illumination point are equally spaced. 10. The inspection apparatus of claim 9, wherein the primary charged particle beam irradiation apparatus has an electron beam generating mechanism, and includes Receiving the particles emitted by the electron beam generating mechanism to form a floating plate having a plurality of openings of the charged particle beam of the plurality of charged particles of the 312765 Ϊ288424 sub-line irradiation point of the enthalpy array, and the opening is provided in the electron The position within the predetermined electron density range of the charged particles emitted by the line generating mechanism. L. , wherein each of the charged particle beam irradiation points is only in the direction of the right direction of the moving direction of the test piece (the interval between the columns) / (the number of rows Ν) + α distance, here "is a small distance. Such as a patent The inspection device of any one of the items of item 7 to item I, wherein the secondary electron line detected by the secondary electron detector is used for the measurement of the defect of the surface of the part, and the integrated body formed on the surface of the test piece The measurement of the wiring of the circuit, the measurement of the potential, the measurement of the matching precision, and the like. • In the case of the inspection device of the 1G or 11th patent application, the 1st charged particle beam irradiation device has a plurality of sub-subjects and a complex charged particle line formed on the surface of the test piece by the open plate The secondary-sub-charged particle irradiation system, and the primary-sub-charged particle irradiation=-sub-charged particles and the primary (four) particles of the other primary charged particle irradiation system do not interfere with each other, and (4) and the secondary charged particle irradiation 2 A plurality of secondary charged particle detectors are provided in a corresponding manner. - an inspection device' characterized in that an electronic edge generator is used to shoot an opening plate having a plurality of openings, and the optical system of the primary light η of the element and the element produced by the test piece is separated. ;: Use, separator into &gt; The off-sub-charged particles are inspected (corrected) 312765 1288424 via at least 3 secondary light (four) shot detectors with a segment of the lens. 15. An inspection apparatus characterized by irradiating an electron beam emitted from a sub-line generating mechanism having a cathode having a body to a plurality of open-opening plates and collecting electron beams passing through the plurality of openings On the surface of the ▲ - Qian Xue Department, and the second charge of the test piece released = two ExB separator separation from the secondary optical system, and then the separation of the second volume of thunder particles through the secondary optics containing at least a segment of the lens A detector is injected into the detector to detect secondary charged particles. 16. An inspection device for injecting electrons emitted from an electron beam generating mechanism into a plurality of openings imaged by a plurality of open σ plates, and into a test piece, and discharging the test piece twice. The particle is separated from the primary optical system and injected into the secondary optical system, and is expanded by the secondary optical system and projected onto the detector surface inspection device (41〇〇), which is characterized in that the lens is formed in the primary optical system. The position of the image of the electron beam generating mechanism is further shifted, and a single opening plate is disposed at the position on the side of the electron beam generating mechanism, and the position of the optical axis of the opening plate is set so that the surface of the test piece comes from each The difference in the strength of the open electron line is minimized. 17. An inspection device for exposing an electron beam emitted by an electron beam generating mechanism to a plurality of opening images obtained by providing a plurality of open π-opening π plates, and inserting the test piece into the test piece. An inspection device (4100) in which a charged particle is separated from an primary optical system and incident on a secondary optical system, and is expanded by a secondary optical system and projected onto a detector surface, and is characterized in that the primary optical system is formed by a lens thereof. The position of the image of the electron beam generating mechanism is further offset from the opening plate of the position setting sheet on the side of the electron beam generating mechanism, and the offset (revision) 312765 5 1288424 is placed in the unillustrated test piece. The difference between the detection amount of the secondary charged particles obtained in the surface of the test piece is the highest among the plurality of openings. 18. The inspection device of any one of the 14th to 17th of the patent application is used for The wafer in the manufacturing process is evaluated. &quot; 19. An inspection device for irradiating an electron beam emitted from one or more electron beam generating mechanisms to a plurality of first opening plates provided with a plurality of openings, and reducing a primary charged particle beam passing through the plurality of openings Scanning is performed on the test piece by one-time optical projection, and the secondary charged particles emitted from the test piece are expanded by the secondary optical system and detected by a plurality of detecting elements = detector, and a plurality of openings are formed. The second plurality of aperture plates are disposed on the inspection device (4200) in front of the detector. The feature is that the position of the opening of the second plurality of aperture plates is set to correct the distortion of the secondary optical system. The shape of the plurality of openings is set, and the field of view is not corrected. 20. An inspection device that emits electron beams from an electron beam generating mechanism = an open σ plate with a plurality of open σs, and a reduction of the primary π electric particles passing through the plurality of openings The inspection device (42〇〇) for performing scanning on the workpiece and projecting the image of the secondary charged particles discharged from the test piece to the detector by the secondary optical system is characterized in that: the primary optical system is inspected The device 'projects an electron beam emitted from the electron beam generating mechanism to the opening plate provided with a plurality of openings, and reduces the sub-charged particles passing through the opening (4) - the sub-optical system containing the Εχβ separator is projected (corrected) This) 312765 6 21. 1288424, and the test piece is released from the image data of the secondary charged particles, and the special touch is as light as the image of the secondary charged particle. The EXB is divided into u: the main surface is on the test piece side, and the image of one of the plurality of openings π η! particles is imaged on the main surface of the Εχβ separation 11 . For example, the inspection device of any one of the 19th and the 21st of the J target (5) of the 1st Hall of the patent application is used to evaluate the wafer in the manufacturing process. p. 23. The inspection device is equipped with a single electron beam generating mechanism for discharging charged particles, a plurality of holes (four) port plates, a plurality of lenses, and at least two ΕχΒ separators disposed apart from each other, and illuminating the electron beams of the electron beam generating mechanism The first optical system on the surface of the test piece to be inspected, and the charged particles from which the test piece is discharged are separated from the first optical system by one of the ΕχΒ separators and injected into the secondary electron detecting device to perform the detection. The inspection apparatus (4300) of the secondary optical system is characterized in that the electron beam of the electron beam generating means is irradiated onto the opening plate 2 to form an image of a plurality of holes, and the positions of the images of the plurality of holes are described. The positions of the ΕχΒ separator are identical, and the direction in which the electric fields of the respective Εχβ separations constitute the charged particles are opposite to each other when viewed from the surface of the test piece. [24] The inspection apparatus of claim 23, wherein the first optical 糸 and the first optical 糸 are paths in which the secondary electrons are biased by one of the ΕχΒ separators to be mutually non-interfering. And the matching (revision) 312765 7 1288424 is set into a group of two rows and multiple columns. 25. An inspection apparatus comprising: a single electron beam generating mechanism for emitting an electron beam; an opening plate having a plurality of holes; and a plurality of lenses and an ExB separator; and discharging the electron beam generating mechanism The first optical system is irradiated onto the surface of the test piece to be inspected, and the secondary charged particles from which the test piece is discharged are separated from the first optical system by the EXB separator and injected into the secondary charged particle detection. The apparatus for performing inspection of the second optical system (4300) is characterized in that the electron beam from the electron beam generating means is irradiated onto the opening plate to form an image of a plurality of holes, and the scanning voltage is superimposed on the front xB. The electric field of the separator is such that the aforementioned electron beam is biased. 26. In the inspection apparatus of claim 23 or 25, wherein the optical system and the second optical system have the path of the secondary charged particles which are biased by the aforementioned eccentricity, The way of interference is configured as a group of two rows and multiple columns. 27. The inspection device of claim 26 is used to evaluate the wafers in the sequence. &quot; Recognize: The inspection device 'Sin-Second Optics (10) plural-sub-charged grain line is irradiated on the test piece, and the secondary tape lens released by the test piece is injected into the secondary optical system by the EXB separator, and is injected. After: the segment lens is used to detect the detector (10)〇 of the detector of the complex number of charged particles between the __ large hard numbers, which = at least three different excitations for the objective lens: electric ',, ' · pressure 'And measure the right and the first! The edge of the figure parallel to the direction is described in the first paragraph; (Revised) 312765 8 1288424 = at least three data obtained by the time-dependent expression indicating the increase in the oxygen signal corresponding to the secondary charged particle. ^ 9·Checking the 'the system and the test piece are opposite each other with a plurality of (four) ^ Γ &quot; 00) 'characteristics: the lens barrel contains the inspection device of the scope of the patent application, each lens barrel -: domain (four) In the trial, the younger brother reattached the charged particles to a different position from the other lens barrels. , 杳 = ^ special, dry music 28 or 29th inspection device 'where the inspection - the pattern on the wafer is in the charged state of the excitation condition. The objective lens 31·::the inspection device ′ is a plurality of sub-charged particles 3 from the primary optical system to the test piece, and the test piece is released two: the under-belt passes through the objective lens and is injected into the secondary optics by the ExB separator. After the injection, at least one section is used: an interval between the two charged particle lines of the expansion number, and then an inspection device (4400) is performed by the second detector, which is characterized by being applied to the lens system. a first electrode having a first voltage close to the ground potential and a second electrode applying a second voltage greater than the i-th voltage, and varying the ith voltage applied to the first electrode to change the objective lens The focal length is configured, and the excitation mechanism for exciting the objective lens is provided with a mechanism for changing the focal length of the objective lens to change the voltage applied to the second electrode, and for changing the focal length in a short time. The mechanism of the voltage of the first electrode. 32. The inspection device of claim 28 or 31 is used to evaluate wafers during or after the manufacturing process. (Revised) 312765 9 1288424 33--Inspection apparatus is provided with an electron beam emitted from a single electron beam generating mechanism, which is irradiated onto an opening plate provided with a plurality of holes to form a plurality of electronic wires, and at least the plurality of electronic wires are used The second-stage electrostatic lens is reduced, and the first optical system for scanning the test piece corresponding to the inspection is performed, and the secondary charged particle beam for discharging the test piece of the month 'J is passed through the electrostatic pairing lens, and then the ExB separator is used. The second optical system inspection device (45〇〇) which is separated from the first optical system and then enlarged by at least one &amp; electrostatic lens and injected into a plurality of detecting devices, is characterized by: high productivity The mode with a lower resolution and the mode with low productivity and resolution are evaluated for the test piece, and the test piece is evaluated with at least two element sizes. A "34" = inspection apparatus of the first application of the patent scope, wherein the reduction ratio of the plurality of electron lines of the first-human optical system is related to the expansion ratio of the electrostatic lens of the second optical system. The inspection apparatus of claim 33, wherein the first optical system of the optical system is formed on the main surface of the objective lens in a mode in which the productivity is high and the resolution is relatively low. The inspection apparatus of item 33, wherein the expansion ratio of the second prior school is adjusted by an electrostatic lens disposed closer to the detector side than the aperture circle disposed in the second optical system. The inspection and assembly of items from item 33 to item 36 are used to evaluate the wafers in the manufacturing order. The 'inspection|set' system is provided with the generated-sub-charged particle beam to test the test piece. The primary optical system of the episode of the syllabus of the sylvestre of the syllabus, the second charged particle emitted by the charged particle irradiation part of the test piece (Revised) 312765 10 1288424 and containing at least the secondary optical system of the segment lens and Measuring the secondary charged particle detector, discharging the secondary charged particles of the charged particle irradiation portion, separating it from the primary optical system by an ExB separator, and emitting the secondary optical system, and then charging the second secondary The image of the particle is enlarged by the lens, and the inspection (5000) is performed by detecting n. The feature is that the optical system generates a plurality of primary charged particles and simultaneously irradiates the test piece, and the detector system A plurality of deceleration voltage applying means for applying a decelerating voltage to the test piece and a charging investigation function for investigating the state of charge of the test piece are provided in a plurality of ways corresponding to the number of the primary charged particles, and a charging investigation function for investigating the state of charge of the test piece. The inspection device of the item of the range of item %, further comprising: determining the optimum deceleration voltage according to the information about the state of charge obtained from the charging investigation function, and applying the same to the function of the test piece, or changing the irradiation of the charged particles once The function of the quantity. The inspection device has an optical system that irradiates a plurality of charged particles to the test piece, and An inspection device (5〇〇〇) with a charge investigation function, which is a description of the charge investigation function, which is detected by a detector of a plurality of secondary charged particles generated by irradiating the test piece with one charged particle and forming a flaw. In the case of the image, the image distortion or the image blur of the specific portion of the test piece is evaluated. The result is that the distortion of the pattern or the degree of blurring of the pattern is evaluated as a large charge. 41. If the patent application is in the 38th, 39th or The inspection item of the fourth item (amendment) 312765 11 1288424, wherein the foregoing charging investigation function can describe the image of the ink near the boundary where the pattern density of at least two subtracting parts is increased. A display device that is displayed for the operator to perform a graphic straight-out and will be evaluated. (10) Distortion or graphic ambiguity 42. If the inspection procedure of the 41st application of the patent scope is + or after the end of the wafer implementation evaluation / 糸 for the manufacturer 43: = separator, is to generate an electric field orthogonal to the optical axis And a magnetic field, and: at least two separated particles having different butyl directions are separated by Μ separation = 04 〇), and are characterized by: having at least six electrodes having an electric field generated by the heart, and generating a rotatable electric field The electrostatic deflector is biased in the opposite direction to the electrostatic deflector; and the electromagnetic deflector of the type and saddle type. For example, in the ΕχΒ separator of the 43rd patent application, the ring type or saddle type electromagnetic southerly device is provided with two sets of electromagnetic coils for generating electric fields and magnetic fields in two directions, and the two sets of coils are circulated by adjusting The current ratio can be adjusted to adjust the deflection direction of the electromagnetic deflector to be opposite to the deflection direction of the electrostatic deflector. For example, in the ΕχΒ separator of claim 44, an electrostatic deflector is provided inside the saddle or ring type electromagnetic deflector. 46. An inspection apparatus for illuminating a semiconductor wafer by irradiating a plurality of charged particles to a semiconductor wafer, and detecting a secondary charged particle emitted from the wafer by a plurality of detectors to obtain imaging data, thereby evaluating the semiconductor wafer The inspection apparatus (6000) of the processing state is characterized in that an ExB separator of the 44th patent of the patent application is used for separating the primary charging 12 (corrected) 312765 1288424 particles from the secondary charged particles. 47. An inspection apparatus for performing a clustering of a plurality of charged particles by a lens system including a capacitor lens, and using an objective lens to image the inspection device (8000) on the test piece, wherein: the plurality of charged particles are: The overlapping position is determined by changing the overlapping position by adjusting the lens system, and determining the aberration value of the junction image which varies with the same to determine the aberration value It becomes an overlapping position below the predetermined value. 48. The inspection apparatus of claim 47, wherein the chromatic aberration of the aforementioned aberration is used to set the overlap position. 49. The inspection device of claim 47, wherein the plurality of charged particles are emitted by a single electron beam generating mechanism, and a plurality of charged particles formed by a plurality of openings, or released by a plurality of electron beam generating mechanisms a plurality of charged particles or a plurality of charged particles emitted by a plurality of emitters formed by a single electron beam generating mechanism. ^ The application of the inspection of the 47th to the 49th of the patent stipulations is for the lens system. The overlapping position is set in the inspection device of any of items 47 to 49 of the main surface of the objective lens, and the wafer in the middle of the coating process is evaluated. W·—A kind of inspection device, after the 曰Μ丄 曰Μ丄 在 在 糸 糸 糸 糸 糸 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生The secondary electron beam emitted by the knife of the piece is injected and contains at least one (amendment) 312765 13 1288424 one of the brothers, and the detector for detecting the secondary electron beam is emitted from the irradiated portion of the electron beam The secondary electron line is applied to the thief separator so that it is separated from the primary optical system and then injected into the secondary photon sputum, and then the image of the secondary electron beam is expanded by the aforementioned lens and then detected by the detection. (5), which is characterized in that: ^人光予系 produces a plurality of primary electron beams and simultaneously irradiates four pieces' while the aforementioned detection H system sets a plurality of buns in a manner corresponding to the number of the aforementioned-second electron lines, the buns The line device includes a deceleration electric application device that applies a decelerating voltage to the test piece, and a charging investigation function that investigates a charging state of the test piece, and determines an optimum deceleration electric power according to the charging state related data of the charging investigation function. And applying the voltage to the test piece or changing the amount of irradiation of the primary electron beam. 53. The device is provided with a single electron beam generating mechanism including a discharge electron beam, and a plurality of electrodes are provided. An opening plate of the hole, a plurality of lenses and a separator, and irradiating the electron beam generated by the electron beam generating mechanism to the first optical system on the surface of the test piece to be inspected, and charging the second piece of the fourth piece The second optical system inspection device (43〇〇) is separated from the first 学β separator by the first $β separator, and is injected into the secondary charged particle detecting device to perform detection. The electron beam generated by the electron beam generating means irradiates the opening plate and forms an image of a plurality of holes, and positions the image of the plurality of holes in accordance with the position of the ΕχΒ separator, and the scanning voltage and the ΕχΒ The electric fields of the separator are overlapped so that the electron beam is deflected (corrected) 312765 14 1288424. 54. - The inspection method is to irradiate the charged particles to the inspection object to check the object to be inspected. The inspection method for the line inspection is provided with: a working chamber that can be controlled in a vacuum environment and inspects the inspection object; an electron line production line that generates charged particles as an electron beam; and a plurality of the aforementioned electron beams are irradiated to Jane In the inspection object in the Wang Zuorong room, the secondary charged particles generated by the inspection object are detected and introduced into the electro-optical system of the image processing system; the f-image processing system in which the secondary charged particles form an image; according to the image processing system The data processing system for displaying the state data of the inspection object or the memory; and the work station device for holding the inspection object in such a manner that the electronic wire can be relatively moved, and "the inspection method is performed by measuring the inspection object a position for correctly positioning the aforementioned electron beam on the inspection object, and then causing the measured charge ♦: or electromagnetic wave to deflect the other electron line at a desired position on the surface of the inspection object, and irradiating the aforementioned electron beam with the aforementioned electron beam Check the + expected position of the surface of the object, and detect the secondary charged particles generated by the aforementioned inspection object. Then, the charged particle is formed into an image, and then according to the rounding of the image processing system, the inspection method of the state data of the inspection object is displayed or memorized, and the feature is that (10) quasi # irradiates the plural charged particle beam to the test piece. At least one w, a human optical system, and at least one of the secondary charged particles is introduced into at least one secondary optical system, and the plurality of charged particle lines are ... and are incident on each other from the secondary optical system The decomposition can be further removed from the position of 15 (corrected) 312765 1288424. 55. A method for inspecting, characterized in that: a charged particle (four) separator that generates a plurality of (four) ports of an electronic line containing an electronic performance date β ^ of a single-unit discharge; Λ = secondary charged particles generated by the test piece, which are subjected to secondary charging h (4), and a step of performing separation by passing a secondary optical system having at least one segment of the lens into a plurality of detectors. ..., 56.:==ΐ method' is characterized in that: an electron beam containing an electrophysical mechanism having a cathode of the body is irradiated onto a step having a plurality of openings; and the plurality of openings are passed through the plurality of optical systems a step of performing focused irradiation on the surface of the open test piece; a step of separating the secondary charged particles from the primary optical system by the ExB separator, and causing the separated secondary charged particles to pass through the primary optical system having at least one long lens A plurality of detectors are incorporated to perform the inspection process. 57. An inspection method comprising the steps of: irradiating an electron beam emitted from an electron beam generating mechanism to a plurality of opening images obtained by a plurality of (four) orifice plates into a test piece; and discharging the secondary charged particles discharged from the test piece from the primary optical An inspection method (41(10)) which is separated by a secondary optical system and which is enlarged by a secondary optical system and projected on a process of detecting a beneficial surface, and is characterized in that it comprises a lens formed in a primary optical system. The position of the image of the electron beam generating mechanism is further shifted from the I-order of the opening plate of the position setting unit on the side of the electron beam generating mechanism; and the position of the optical axis (revision) 312765 16 1288424 in which the opening plate is provided is set to The electron beam emitted from each opening of the process surface having the smallest difference in the intensity of the injected test piece is a plurality of electrons generated by the electron beam generating means, and the plurality of open plates having a plurality of openings are obtained. a step of injecting four openings into the opening; and separating the secondary charged particles emitted from the test piece from the primary optical system and projecting the secondary light (4), and expanding by the secondary optical system and projecting The inspection method (4) (10) of the process of the detector surface is characterized in that a single opening plate is disposed at a position shifted from the position of the image of the electron beam generating mechanism formed by the lens to the position of the electron beam generating mechanism. And the offset amount is set such that the difference between the detection amount of the secondary charged particles obtained when the test piece of the money shape is placed on the test piece surface is the smallest among the plurality of openings. 59. The inspection method includes a single electron beam generating mechanism for discharging electron beams, an opening σ plate for a plurality of holes, a plurality of lenses, and an ExB separator, and is discharged by the electron beam generating mechanism. The first optical system preparation step of irradiating the electron beam on the surface of the test piece to be inspected and the secondary charged particles discharging the test piece are separated from the first optical system by the Εχβ separator, and are injected twice. Charged particle detecting device = inspection method (4300) for performing a detecting step, characterized in that an electron beam emitted from the electron beam generating means is irradiated onto the opening plate to form an image of a plurality of holes, and the scanning voltage is superposed on The electric field of the Exb separator is such that the electronic wire is biased. 60. An inspection method comprising the steps of irradiating a plurality of primary charged particle beams to a test piece by a primary optical system; and a secondary band for releasing the test piece (Revised) 312765 17 1288424 Electron particle passage After the lens is injected into the secondary optical system by the helium separator, the interval between the plurality of charged particle lines is enlarged by at least one lens after the injection, and then the inspection method (4400) of performing the detection by the plurality of detectors is performed. The method is characterized in that: at least three different excitation voltages are respectively supplied to the objective lens, and the edge of the pattern parallel to the first direction is scanned in the second direction to represent the electrical corresponding to the intensity of the secondary charged particles. At least three data of the increase in the signal. 61. An inspection method comprising: a primary optical system that will generate primary charged particles and be bundled to perform scanning illumination on the test piece, and a secondary charged particle emission emitted from the charged particle irradiation portion of the test piece. And a secondary optical system preparation step including at least one lens, and accelerating the secondary charged particles emitted from the charged particle irradiation portion, and separating the primary optical system from the primary optical system and then entering the secondary optical system. Then, the inspection method (5000) of expanding the image of the secondary charged particles by the lens and detecting the step by the detector further includes generating a plurality of primary charged particles by the primary optical system, and a step of simultaneously irradiating the test piece; a step of providing a plurality of the detectors corresponding to the number of the primary charged particles; a step of applying a decelerating voltage to the test piece; and a step of investigating the state of charge of the test piece. 62. An inspection method using an optical system that irradiates a plurality of charged particles to a test piece and an inspection device (5000) having a charge investigation function (Revised) 312765 1288424 Method 'characterized by the foregoing The charge investigation work can be performed by illuminating the secondary charged particles generated by the test piece by the _ sub-child, and detecting the specific (4) true or graphic blur of the test piece, and the result is a graphic Loss::: A situation in which the degree of loss of the pattern is large is evaluated as a large charge. ^ Distortion or graphic blur 63. - A kind of inspection method, danced on the χγ^ electric particle inspection method (7000), which is characterized by eight pieces of ▼ ▼ 工 工 工 工 收容 收容 收容 收容 收容 收容 收容 收容Body non-contact support, the housing of the workbench is solid? Bearing the second shell The method of irradiating the surface of the test piece of the inspection device with the charged particles 仃: the working exhaust circumstance, and irradiating the charged particles on the surface of the test piece. Α 仃 only exhaust inspection (Revised) 312765 19 1288424 VII. Designation of Representative Representatives (1) The representative representative of the case is: (7). (2) A brief description of the components of the representative figure: 54 Rotary table 72 Primary electron optical system 74 Secondary electron optical system 76 Detection system 541 Mounting surface 721 Electron gun 722 Capacitor lens 723a, 743a Opening 723 Opening plate 724 Reduction lens 725 ExB separator 726 objective lens 727 deflector 741, 742 enlarged lens 743 detection plate 761 detector 762 A/D converter 763 image processing unit 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: 益〇 # ο, (amendment page) 312765