JPS6322610B2 - - Google Patents
Info
- Publication number
- JPS6322610B2 JPS6322610B2 JP56150244A JP15024481A JPS6322610B2 JP S6322610 B2 JPS6322610 B2 JP S6322610B2 JP 56150244 A JP56150244 A JP 56150244A JP 15024481 A JP15024481 A JP 15024481A JP S6322610 B2 JPS6322610 B2 JP S6322610B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chamber
- storage chamber
- main surface
- electron beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P34/00—
Landscapes
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56150244A JPS5850737A (ja) | 1981-09-21 | 1981-09-21 | 半導体素子の製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56150244A JPS5850737A (ja) | 1981-09-21 | 1981-09-21 | 半導体素子の製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5850737A JPS5850737A (ja) | 1983-03-25 |
| JPS6322610B2 true JPS6322610B2 (show.php) | 1988-05-12 |
Family
ID=15492706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56150244A Granted JPS5850737A (ja) | 1981-09-21 | 1981-09-21 | 半導体素子の製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5850737A (show.php) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59232413A (ja) * | 1983-06-16 | 1984-12-27 | Toshiba Corp | 半導体装置の製造方法及びその製造装置 |
| JPS60216549A (ja) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | 半導体装置の製造方法 |
| JPS60216555A (ja) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | 半導体装置の製造方法 |
| JPH0638411B2 (ja) * | 1984-04-26 | 1994-05-18 | 工業技術院長 | 電子ビ−ムによるパタ−ン形成法 |
| JPH0712033B2 (ja) * | 1984-05-10 | 1995-02-08 | 工業技術院長 | イオンビ−ムによる微細パタ−ン形成法 |
| JPS6137152A (ja) * | 1984-07-31 | 1986-02-22 | 小木曾 誠 | 義歯維持用インプラント |
| JPS61179573A (ja) * | 1985-02-04 | 1986-08-12 | Agency Of Ind Science & Technol | プレ−ナ型半導体装置 |
| JPH0634795B2 (ja) * | 1985-02-22 | 1994-05-11 | 京セラ株式会社 | 複合インプラントとその製造方法 |
| JPS61248522A (ja) * | 1985-04-26 | 1986-11-05 | Mitsubishi Electric Corp | 不純物層形成装置 |
| JPS62156870A (ja) * | 1985-12-28 | 1987-07-11 | Matsushita Electronics Corp | 固体撮像装置の製造方法 |
| JPS63147455A (ja) * | 1986-12-11 | 1988-06-20 | 株式会社神戸製鋼所 | 複合インプラント部材 |
| JPH07260698A (ja) * | 1994-03-18 | 1995-10-13 | Sony Corp | 異物検査装置及び異物検査方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51140560A (en) * | 1975-05-30 | 1976-12-03 | Hitachi Ltd | Method of monitoring homoepitaxy film thickness |
| JPS54162452A (en) * | 1978-06-13 | 1979-12-24 | Mitsubishi Electric Corp | Manufacture of semiconductor and its unit |
| JPS593540B2 (ja) * | 1979-09-03 | 1984-01-24 | 三菱電機株式会社 | 窒化膜形成法 |
| JPS5679438A (en) * | 1979-12-04 | 1981-06-30 | Toshiba Corp | Working device for charged particle beam |
-
1981
- 1981-09-21 JP JP56150244A patent/JPS5850737A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5850737A (ja) | 1983-03-25 |
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