JPS5848045A - 感光性組成物 - Google Patents

感光性組成物

Info

Publication number
JPS5848045A
JPS5848045A JP14707281A JP14707281A JPS5848045A JP S5848045 A JPS5848045 A JP S5848045A JP 14707281 A JP14707281 A JP 14707281A JP 14707281 A JP14707281 A JP 14707281A JP S5848045 A JPS5848045 A JP S5848045A
Authority
JP
Japan
Prior art keywords
group
compound
silicone
photosensitive composition
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14707281A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0149931B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Kubota
芳宏 久保田
Toshio Shiobara
利夫 塩原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP14707281A priority Critical patent/JPS5848045A/ja
Publication of JPS5848045A publication Critical patent/JPS5848045A/ja
Publication of JPH0149931B2 publication Critical patent/JPH0149931B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP14707281A 1981-09-18 1981-09-18 感光性組成物 Granted JPS5848045A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14707281A JPS5848045A (ja) 1981-09-18 1981-09-18 感光性組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14707281A JPS5848045A (ja) 1981-09-18 1981-09-18 感光性組成物

Publications (2)

Publication Number Publication Date
JPS5848045A true JPS5848045A (ja) 1983-03-19
JPH0149931B2 JPH0149931B2 (enrdf_load_stackoverflow) 1989-10-26

Family

ID=15421830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14707281A Granted JPS5848045A (ja) 1981-09-18 1981-09-18 感光性組成物

Country Status (1)

Country Link
JP (1) JPS5848045A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147732A (ja) * 1983-12-30 1985-08-03 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション オルガノシリコン組成物
US4722881A (en) * 1984-12-19 1988-02-02 Hitachi, Ltd. Radiation-sensitive resist composition with an admixture of cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasiloxane and a polysilsesquioxane
US4752552A (en) * 1983-06-29 1988-06-21 Fuji Photo Film Co., Ltd. Photosolubilizable composition
JPH0285859A (ja) * 1988-09-22 1990-03-27 Fuji Photo Film Co Ltd 感光性組成物
US5238773A (en) * 1988-10-28 1993-08-24 International Business Machines Corporation Alkaline developable photoresist composition containing radiation sensitive organosilicon compound with quinone diazide terminal groups
JPH0683065A (ja) * 1992-03-17 1994-03-25 Internatl Business Mach Corp <Ibm> フォトレジスト材料及びそれを用いたパターン形成方法
US5399462A (en) * 1992-09-30 1995-03-21 International Business Machines Corporation Method of forming sub-half micron patterns with optical lithography using bilayer resist compositions comprising a photosensitive polysilsesquioxane
US5422223A (en) * 1992-04-30 1995-06-06 International Business Machines Corporation Silicon-containing positive resist and use in multilayer metal structures
JP2008122916A (ja) * 2006-10-16 2008-05-29 Hitachi Chem Co Ltd 感光性樹脂組成物、シリカ系被膜の形成方法、及びシリカ系被膜を備える装置及び部材
JP2015055821A (ja) * 2013-09-13 2015-03-23 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752552A (en) * 1983-06-29 1988-06-21 Fuji Photo Film Co., Ltd. Photosolubilizable composition
JPS60147732A (ja) * 1983-12-30 1985-08-03 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション オルガノシリコン組成物
US4603195A (en) * 1983-12-30 1986-07-29 International Business Machines Corporation Organosilicon compound and use thereof in photolithography
US4722881A (en) * 1984-12-19 1988-02-02 Hitachi, Ltd. Radiation-sensitive resist composition with an admixture of cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasiloxane and a polysilsesquioxane
JPH0285859A (ja) * 1988-09-22 1990-03-27 Fuji Photo Film Co Ltd 感光性組成物
US5238773A (en) * 1988-10-28 1993-08-24 International Business Machines Corporation Alkaline developable photoresist composition containing radiation sensitive organosilicon compound with quinone diazide terminal groups
JPH0683065A (ja) * 1992-03-17 1994-03-25 Internatl Business Mach Corp <Ibm> フォトレジスト材料及びそれを用いたパターン形成方法
US5422223A (en) * 1992-04-30 1995-06-06 International Business Machines Corporation Silicon-containing positive resist and use in multilayer metal structures
US5399462A (en) * 1992-09-30 1995-03-21 International Business Machines Corporation Method of forming sub-half micron patterns with optical lithography using bilayer resist compositions comprising a photosensitive polysilsesquioxane
JP2008122916A (ja) * 2006-10-16 2008-05-29 Hitachi Chem Co Ltd 感光性樹脂組成物、シリカ系被膜の形成方法、及びシリカ系被膜を備える装置及び部材
JP2015055821A (ja) * 2013-09-13 2015-03-23 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
JPH0149931B2 (enrdf_load_stackoverflow) 1989-10-26

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