JPS5848045A - 感光性組成物 - Google Patents

感光性組成物

Info

Publication number
JPS5848045A
JPS5848045A JP14707281A JP14707281A JPS5848045A JP S5848045 A JPS5848045 A JP S5848045A JP 14707281 A JP14707281 A JP 14707281A JP 14707281 A JP14707281 A JP 14707281A JP S5848045 A JPS5848045 A JP S5848045A
Authority
JP
Japan
Prior art keywords
group
compound
silicone
photosensitive composition
substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14707281A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0149931B2 (cg-RX-API-DMAC10.html
Inventor
Yoshihiro Kubota
芳宏 久保田
Toshio Shiobara
利夫 塩原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin-Etsu Chemical Co Ltd
Original Assignee
Shin-Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin-Etsu Chemical Co Ltd filed Critical Shin-Etsu Chemical Co Ltd
Priority to JP14707281A priority Critical patent/JPS5848045A/ja
Publication of JPS5848045A publication Critical patent/JPS5848045A/ja
Publication of JPH0149931B2 publication Critical patent/JPH0149931B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP14707281A 1981-09-18 1981-09-18 感光性組成物 Granted JPS5848045A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14707281A JPS5848045A (ja) 1981-09-18 1981-09-18 感光性組成物

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14707281A JPS5848045A (ja) 1981-09-18 1981-09-18 感光性組成物

Publications (2)

Publication Number Publication Date
JPS5848045A true JPS5848045A (ja) 1983-03-19
JPH0149931B2 JPH0149931B2 (cg-RX-API-DMAC10.html) 1989-10-26

Family

ID=15421830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14707281A Granted JPS5848045A (ja) 1981-09-18 1981-09-18 感光性組成物

Country Status (1)

Country Link
JP (1) JPS5848045A (cg-RX-API-DMAC10.html)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147732A (ja) * 1983-12-30 1985-08-03 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション オルガノシリコン組成物
US4722881A (en) * 1984-12-19 1988-02-02 Hitachi, Ltd. Radiation-sensitive resist composition with an admixture of cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasiloxane and a polysilsesquioxane
US4752552A (en) * 1983-06-29 1988-06-21 Fuji Photo Film Co., Ltd. Photosolubilizable composition
JPH0285859A (ja) * 1988-09-22 1990-03-27 Fuji Photo Film Co Ltd 感光性組成物
US5238773A (en) * 1988-10-28 1993-08-24 International Business Machines Corporation Alkaline developable photoresist composition containing radiation sensitive organosilicon compound with quinone diazide terminal groups
JPH0683065A (ja) * 1992-03-17 1994-03-25 Internatl Business Mach Corp <Ibm> フォトレジスト材料及びそれを用いたパターン形成方法
US5399462A (en) * 1992-09-30 1995-03-21 International Business Machines Corporation Method of forming sub-half micron patterns with optical lithography using bilayer resist compositions comprising a photosensitive polysilsesquioxane
US5422223A (en) * 1992-04-30 1995-06-06 International Business Machines Corporation Silicon-containing positive resist and use in multilayer metal structures
JP2008122916A (ja) * 2006-10-16 2008-05-29 Hitachi Chem Co Ltd 感光性樹脂組成物、シリカ系被膜の形成方法、及びシリカ系被膜を備える装置及び部材
JP2015055821A (ja) * 2013-09-13 2015-03-23 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4752552A (en) * 1983-06-29 1988-06-21 Fuji Photo Film Co., Ltd. Photosolubilizable composition
JPS60147732A (ja) * 1983-12-30 1985-08-03 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション オルガノシリコン組成物
US4603195A (en) * 1983-12-30 1986-07-29 International Business Machines Corporation Organosilicon compound and use thereof in photolithography
US4722881A (en) * 1984-12-19 1988-02-02 Hitachi, Ltd. Radiation-sensitive resist composition with an admixture of cis-(1,3,5,7-tetrahydroxy)-1,3,5,7-tetraphenylcyclotetrasiloxane and a polysilsesquioxane
JPH0285859A (ja) * 1988-09-22 1990-03-27 Fuji Photo Film Co Ltd 感光性組成物
US5238773A (en) * 1988-10-28 1993-08-24 International Business Machines Corporation Alkaline developable photoresist composition containing radiation sensitive organosilicon compound with quinone diazide terminal groups
JPH0683065A (ja) * 1992-03-17 1994-03-25 Internatl Business Mach Corp <Ibm> フォトレジスト材料及びそれを用いたパターン形成方法
US5422223A (en) * 1992-04-30 1995-06-06 International Business Machines Corporation Silicon-containing positive resist and use in multilayer metal structures
US5399462A (en) * 1992-09-30 1995-03-21 International Business Machines Corporation Method of forming sub-half micron patterns with optical lithography using bilayer resist compositions comprising a photosensitive polysilsesquioxane
JP2008122916A (ja) * 2006-10-16 2008-05-29 Hitachi Chem Co Ltd 感光性樹脂組成物、シリカ系被膜の形成方法、及びシリカ系被膜を備える装置及び部材
JP2015055821A (ja) * 2013-09-13 2015-03-23 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
JPH0149931B2 (cg-RX-API-DMAC10.html) 1989-10-26

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