JPS5843509A - 量産型薄膜生成装置 - Google Patents

量産型薄膜生成装置

Info

Publication number
JPS5843509A
JPS5843509A JP56141840A JP14184081A JPS5843509A JP S5843509 A JPS5843509 A JP S5843509A JP 56141840 A JP56141840 A JP 56141840A JP 14184081 A JP14184081 A JP 14184081A JP S5843509 A JPS5843509 A JP S5843509A
Authority
JP
Japan
Prior art keywords
chamber
reaction chamber
susceptor
substrate
door
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56141840A
Other languages
English (en)
Japanese (ja)
Other versions
JPS627686B2 (enrdf_load_stackoverflow
Inventor
Shinji Nishiura
西浦　真治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP56141840A priority Critical patent/JPS5843509A/ja
Publication of JPS5843509A publication Critical patent/JPS5843509A/ja
Publication of JPS627686B2 publication Critical patent/JPS627686B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP56141840A 1981-09-09 1981-09-09 量産型薄膜生成装置 Granted JPS5843509A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56141840A JPS5843509A (ja) 1981-09-09 1981-09-09 量産型薄膜生成装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56141840A JPS5843509A (ja) 1981-09-09 1981-09-09 量産型薄膜生成装置

Publications (2)

Publication Number Publication Date
JPS5843509A true JPS5843509A (ja) 1983-03-14
JPS627686B2 JPS627686B2 (enrdf_load_stackoverflow) 1987-02-18

Family

ID=15301368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56141840A Granted JPS5843509A (ja) 1981-09-09 1981-09-09 量産型薄膜生成装置

Country Status (1)

Country Link
JP (1) JPS5843509A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240121A (ja) * 1984-05-15 1985-11-29 Fujitsu Ltd 横型炉

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02122459A (ja) * 1988-10-31 1990-05-10 Matsushita Electric Ind Co Ltd カセットホルダー装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60240121A (ja) * 1984-05-15 1985-11-29 Fujitsu Ltd 横型炉

Also Published As

Publication number Publication date
JPS627686B2 (enrdf_load_stackoverflow) 1987-02-18

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