JPH0366819B2 - - Google Patents

Info

Publication number
JPH0366819B2
JPH0366819B2 JP57078921A JP7892182A JPH0366819B2 JP H0366819 B2 JPH0366819 B2 JP H0366819B2 JP 57078921 A JP57078921 A JP 57078921A JP 7892182 A JP7892182 A JP 7892182A JP H0366819 B2 JPH0366819 B2 JP H0366819B2
Authority
JP
Japan
Prior art keywords
chamber
reaction chamber
plasma reaction
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57078921A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58196063A (ja
Inventor
Masatoshi Kitagawa
Shinichiro Ishihara
Masaharu Oono
Koshiro Mori
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP57078921A priority Critical patent/JPS58196063A/ja
Publication of JPS58196063A publication Critical patent/JPS58196063A/ja
Publication of JPH0366819B2 publication Critical patent/JPH0366819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
JP57078921A 1982-05-10 1982-05-10 光起電力素子の製造方法 Granted JPS58196063A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57078921A JPS58196063A (ja) 1982-05-10 1982-05-10 光起電力素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57078921A JPS58196063A (ja) 1982-05-10 1982-05-10 光起電力素子の製造方法

Publications (2)

Publication Number Publication Date
JPS58196063A JPS58196063A (ja) 1983-11-15
JPH0366819B2 true JPH0366819B2 (enrdf_load_stackoverflow) 1991-10-18

Family

ID=13675315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57078921A Granted JPS58196063A (ja) 1982-05-10 1982-05-10 光起電力素子の製造方法

Country Status (1)

Country Link
JP (1) JPS58196063A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593644A (en) * 1983-10-26 1986-06-10 Rca Corporation Continuous in-line deposition system
US5780313A (en) * 1985-02-14 1998-07-14 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
US4693777A (en) * 1984-11-30 1987-09-15 Kabushiki Kaisha Toshiba Apparatus for producing semiconductor devices
JPS6324614A (ja) * 1986-07-16 1988-02-02 Mitsubishi Electric Corp 半導体製造装置
US5016562A (en) * 1988-04-27 1991-05-21 Glasstech Solar, Inc. Modular continuous vapor deposition system
JPH02224221A (ja) * 1989-02-27 1990-09-06 Hitachi Ltd 半導体装置製造方法、基板処理装置および半導体装置製造装置
TW237562B (enrdf_load_stackoverflow) 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
US6719848B2 (en) * 2001-08-16 2004-04-13 First Solar, Llc Chemical vapor deposition system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films

Also Published As

Publication number Publication date
JPS58196063A (ja) 1983-11-15

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