JPS5843509A - Mass-production type film fabricating device - Google Patents

Abstract

PURPOSE:To achieve high operation efficiency by forming a thin film on the substrate by means of assembly line production with the vacuum of a reaction chamber being maintained. CONSTITUTION:An insulating body 14 on a belt conveyor 9 is held by opening the front door of a front chamber 2, then a susceptor 15 on which substrates 20 are mounted on both sides is held vertically, and contactors 16 and 18 of connection conduction bodies 17 and 19 are fitted on rails 10 and 11. Next, the front door is closed and the air in the front chamber 2 is evacuated to heat the substrate 20. Next, the door leading to a reaction chamber 1 is opened, and the susceptor 15 in front chamber 2 is moved to the reaction chamber 2. Here, the reaction gas is introduced into the reaction chamber 2, and voltage with a radio frequency is applied between susceptors 15 by means of electricity supplying conductors 12 and 13 to pile up amorphous silicon on the substrate 20. Then the door 5 is opened and the susceptor 15 is moved from the reaction chamber 1 to a rear chamber 3. After this the door 5 is closed and the vacuum in the rear chamber 3 is broken, the susceptor 15 and a substrate completing the treatment are taken out.

Description

DETAILED DESCRIPTION OF THE INVENTION According to the present invention, a glow discharge is generated by applying a voltage between electrodes placed opposite each other in a reaction chamber, such as in the production of an amorphous silicon solar cell, and a glow discharge is supplied into the reaction chamber 511. The reactant gas was collected and at least one of the reactant gas components was supported on the electrode. The present invention relates to an apparatus for producing a thin film by weight, which can deposit a thin film on a broom board in an assembly line.

A possible method for forming thin films on a large number of substrates using the plasma CVD method is a batch method in which a large number of substrates are processed simultaneously in a large reaction chamber, similar to the normal QVD method. However, in this method, the operation of loading and unloading a large number of substrates is complicated, and the vacuum in the reaction chamber must be broken each time to pump out the substrates, making it difficult to obtain high operating efficiency.

SUMMARY OF THE INVENTION An object of the present invention is to provide an m-type thin film forming apparatus that can form a thin film on a substrate by flowing operation while maintaining a vacuum in a reaction chamber.

The purpose of this is to provide an adjacent pixel and a rear chamber in the first part of the reaction chamber through a seven-cell door that can be opened and closed.
The seven walls of the soden and rear chamber can be evacuated independently, and there is also a movable conveyor that spans the two, and a second part of the three that is located inside the reaction chamber that carries the power supply conductor. Two rails are provided, supported on the conveyor, and each of the seven equally spaced pairs of electrodes is connected to each of the power supply conductors via a contact that slides on the rails. This is achieved by

Embodiments of the present invention will be described below with reference to the drawings.

In the figure, the reaction *xecll! A front chamber 2 and a rear chamber 3 are provided. Reaction chamber 1, front chamber 2 and rear *3
There are doors 4 and 5 that can be opened and closed at the boundary between the two, and the front chamber 2 and the rear 1 and 3 have doors that can be opened and closed (not shown). Each layer is hermetically closed, and each chamber l
~3 is when each layer is closed - fidget independent exhaust ports 6, 7
．． From 8, evacuation can be performed by a vacuum system (not shown).

Furthermore, there is a belt conveyor 9 on the bottom of each chamber 1 to 3, extending across each chamber, and two rails 10 and 11 extending across each chamber K are laid on the ceiling. Seal 10, 11
is made of a conductor as the power supply conductor 12, 13 in the reaction chamber, and is made of an insulator in the front, chamber, and rear chambers, each of which is formed as a continuous rail with the same cross section. The susceptors 15, which are arranged at equal intervals across the susceptors 14, are connected to connecting conductors 17 with contacts 16 that slide on the rail 1° every other time, or on the rail 11. A connecting conductor 19 with a contact 18 that
I'm fidgeting with the connection.

To produce a thin film using this device, first open the front door of the front chamber 2, place the susceptor 1 at a predetermined position on the belt conveyor 9 with the insulator 14 in between, and deposit the substrate front on both sides.
Stand 5 vertically 1. ! ! Contact 16 of connecting conductor 17.19
．． 18 onto the rails 10 and 11. Next, the front door is closed, the inside of the front 12' is evacuated from the exhaust lower, and the heater built in the susceptor 15 is energized to heat the front of the substrate to a predetermined temperature. The heater is energized via a conductor or a separate power supply conductor, and then! Already KX
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Open the door 1.4 in the room of the Emperor 1, operate the conveyor 9, and move the susceptor 15 that was in the front chamber 2 into the reaction chamber. At this time, each susceptor 15 K @contact 1
6 or 18 slides on the rail 10 or 11 and reaches the power supply conductor in the reaction chamber 2 or 13 K. Here, a reaction gas such as silane gas is introduced into the reaction chamber 2 from the gas inlet 21 until a predetermined degree of vacuum is reached. Introduced.

A radio frequency voltage is applied between the feed conductor 12 and the susceptor 15 which is turned by 13 to generate a glow discharge to deposit amorphous silicon on the front of each substrate. The susceptor 15 with the substrate covered with the amorphous silicon thin film mounted thereon is moved from the reaction chamber 1 to the rear chamber 3. At the same time, the contacts 16 and 18 are also slid from above the power supply conductors 12 and 13. □ Insulator part of rail 10.11 inside chamber 3 ◎ After this, close the door 5, break the vacuum in the rear chamber a, open the front door, and dam the susceptor 15 and the front of the processed substrate. Repetition of such operations tlII includes insertion of the susceptor 15 and the front of the substrate in the front chamber 2 during the film production process in the reaction chamber IK, and insertion of the susceptor 15 and the front of the substrate in the rear chamber 3. If it goes on sale, thin film production operations on substrates can be performed continuously as a tact-type flow operation.

In the embodiment shown in the figure, the front of the board is attached to both sides of the susceptor 15, and as many boards as possible are used at the same time. The susceptor may be replaced with a dedicated electrode without a built-in heater. In this case, glue discharge can also be generated by applying a +5 DC voltage with the dedicated electrode side being positive via the power supply conductors 12, 13.

The distance between the feed conductors 12 and 13 is the susceptor (electrode) 15-
The distance between the two conductors should be sufficiently large, for example, 1.5 times or more, to prevent discharge from occurring between the power supply conductors.
◎ Also, in the example shown in the figure, there is one reaction chamber, but the number of kneading chambers can be increased as necessary. For example, plm 3
When producing layered amorphous silicon, the reaction chambers are divided into three shells, separated by doors that can be opened and closed, and the reaction gas components and discharge conditions in each chamber are controlled to form a PTT*n-3 layer of the required film thickness. The desired p1m structure is laminated by opening the boundary door and moving the substrate by a conveyor. In this case, in order to control the discharge, it is necessary to insulate the rail between each reaction bulk and to keep the power supply conductor of each reaction chamber independent.

In the device according to the invention, a vacuum conveyor is moved through the walls of each chamber that can be evacuated. Therefore, at that time, there is a possibility that vacuum leakage may occur at the penetrating portion, but since the conveyor is not operated during the progress of the reaction, the vacuum leakage will not directly affect the quality of the produced film.

As explained above, the trap 1 of the present invention is provided before and after the reaction chamber.
The susceptor or electrode and the substrate are inserted into the reaction chamber, the susceptor or electrode and the substrate are removed one after another without breaking the vacuum of the reaction chamber, and the thin film is moved between them by a conveyor. It enables tact-type production work, and can be applied to mass production of amorphous silicon films for solar cells due to its high operating efficiency, so the effects obtained are extremely [ big.

[Brief explanation of drawings]

The figure shows the shear force 1 of an embodiment of the thin film production device according to the present invention. 1... Reaction chamber, 2... Front chamber, 3... Back chamber, 4.5
... Door, 6.7.8 ... Exhaust port, 9 ... Belt conveyor, 10.11 ... Rail, 12.13 ... Power supply conductor, 15 ... Susceptor, 16°18. ...Contactor, adder...board, 21...gas inlet.

Claims (1)

[Claims] 1) Glow discharge is generated by applying a voltage between electrodes placed opposite each other in the reaction chamber, and the reaction gas supplied to P1- is decomposed and the reaction gas components are separated from at least one electrode. In cases where the film is deposited as a thin film on a substrate supported by
In addition, a conveyor movable across three layers and two wires laid across the main chamber, the portion of which is located inside the reaction chamber serves as a power supply conductor, are provided. A quantity iaim thin film production characterized in that each of the electrodes supported on and forming equally spaced electrodes is connected to the iI:#jeh of the feed conductor via a contactor sliding on the rail. Equipment-0