JPS584180A - アクテイブマトリクス基板 - Google Patents
アクテイブマトリクス基板Info
- Publication number
- JPS584180A JPS584180A JP56102984A JP10298481A JPS584180A JP S584180 A JPS584180 A JP S584180A JP 56102984 A JP56102984 A JP 56102984A JP 10298481 A JP10298481 A JP 10298481A JP S584180 A JPS584180 A JP S584180A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- peripheral drive
- active matrix
- polycrystalline silicon
- matrix substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims description 37
- 239000011159 matrix material Substances 0.000 title claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 239000011521 glass Substances 0.000 description 11
- 238000005224 laser annealing Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000399233 Rita Species 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 241001421773 Theritas Species 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56102984A JPS584180A (ja) | 1981-06-30 | 1981-06-30 | アクテイブマトリクス基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56102984A JPS584180A (ja) | 1981-06-30 | 1981-06-30 | アクテイブマトリクス基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS584180A true JPS584180A (ja) | 1983-01-11 |
| JPH0261032B2 JPH0261032B2 (enrdf_load_stackoverflow) | 1990-12-18 |
Family
ID=14341976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56102984A Granted JPS584180A (ja) | 1981-06-30 | 1981-06-30 | アクテイブマトリクス基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS584180A (enrdf_load_stackoverflow) |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS609286A (ja) * | 1983-06-28 | 1985-01-18 | Seiko Epson Corp | 液晶表示によるビデオモニタ |
| JPS61229103A (ja) * | 1985-04-04 | 1986-10-13 | Canon Inc | 複写機等の制御装置 |
| JPS6352121A (ja) * | 1987-08-14 | 1988-03-05 | Seiko Instr & Electronics Ltd | 電気光学装置 |
| JPS63223788A (ja) * | 1987-03-13 | 1988-09-19 | 日本電気株式会社 | アクテイブマトリツクス表示装置の駆動ｉｃ |
| JPS63307431A (ja) * | 1987-06-10 | 1988-12-15 | Hitachi Ltd | 薄膜半導体表示装置 |
| JPS642019A (en) * | 1987-06-25 | 1989-01-06 | Asahi Glass Co Ltd | Active matrix type liquid crystal display element |
| JPS6445162A (en) * | 1987-08-13 | 1989-02-17 | Hitachi Ltd | Manufacture of semiconductor device |
| JPH06151307A (ja) * | 1993-06-11 | 1994-05-31 | Sanyo Electric Co Ltd | 薄膜トランジスタ回路装置の製造方法 |
| JPH07135323A (ja) * | 1993-10-20 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体集積回路およびその作製方法 |
| JPH07202215A (ja) * | 1994-12-05 | 1995-08-04 | Hitachi Ltd | 薄膜半導体装置とその製造方法 |
| JPH0950045A (ja) * | 1995-12-15 | 1997-02-18 | Seiko Instr Inc | 半導体装置、光弁装置およびプロジェクション装置 |
| US5962897A (en) * | 1992-06-18 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6236064B1 (en) | 1991-03-15 | 2001-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6472297B1 (en) | 1998-03-31 | 2002-10-29 | Matsushita Electric Industrial Co., Ltd. | Method of producing TFT array substrate for liquid crystal display device |
| US6486497B2 (en) | 1988-05-17 | 2002-11-26 | Seiko Epson Corporation | Liquid crystal device, projection type display device and driving circuit |
| JP2003168691A (ja) * | 2001-11-30 | 2003-06-13 | Fujitsu Ltd | 半導体装置の製造方法 |
| US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US6693301B2 (en) | 1991-10-16 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving and manufacturing the same |
| US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
| US7071910B1 (en) | 1991-10-16 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and method of driving and manufacturing the same |
| US7116302B2 (en) | 1991-10-16 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Process of operating active matrix display device having thin film transistors |
| US7253440B1 (en) | 1991-10-16 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having at least first and second thin film transistors |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4974438A (enrdf_load_stackoverflow) * | 1972-10-10 | 1974-07-18 | ||
| JPS54154992A (en) * | 1978-05-29 | 1979-12-06 | Seiko Epson Corp | Semiconductor electrode substrate for liquid crystal panel drive |
-
1981
- 1981-06-30 JP JP56102984A patent/JPS584180A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4974438A (enrdf_load_stackoverflow) * | 1972-10-10 | 1974-07-18 | ||
| JPS54154992A (en) * | 1978-05-29 | 1979-12-06 | Seiko Epson Corp | Semiconductor electrode substrate for liquid crystal panel drive |
Cited By (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS609286A (ja) * | 1983-06-28 | 1985-01-18 | Seiko Epson Corp | 液晶表示によるビデオモニタ |
| JPS61229103A (ja) * | 1985-04-04 | 1986-10-13 | Canon Inc | 複写機等の制御装置 |
| JPS63223788A (ja) * | 1987-03-13 | 1988-09-19 | 日本電気株式会社 | アクテイブマトリツクス表示装置の駆動ｉｃ |
| JPS63307431A (ja) * | 1987-06-10 | 1988-12-15 | Hitachi Ltd | 薄膜半導体表示装置 |
| JPS642019A (en) * | 1987-06-25 | 1989-01-06 | Asahi Glass Co Ltd | Active matrix type liquid crystal display element |
| JPS6445162A (en) * | 1987-08-13 | 1989-02-17 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS6352121A (ja) * | 1987-08-14 | 1988-03-05 | Seiko Instr & Electronics Ltd | 電気光学装置 |
| US6486497B2 (en) | 1988-05-17 | 2002-11-26 | Seiko Epson Corporation | Liquid crystal device, projection type display device and driving circuit |
| US6700135B2 (en) | 1988-05-17 | 2004-03-02 | Seiko Epson Corporation | Active matrix panel |
| US6236064B1 (en) | 1991-03-15 | 2001-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device |
| US6713783B1 (en) | 1991-03-15 | 2004-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Compensating electro-optical device including thin film transistors |
| US6693301B2 (en) | 1991-10-16 | 2004-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method of driving and manufacturing the same |
| US7071910B1 (en) | 1991-10-16 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Electrooptical device and method of driving and manufacturing the same |
| US6759680B1 (en) | 1991-10-16 | 2004-07-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device having thin film transistors |
| US7253440B1 (en) | 1991-10-16 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having at least first and second thin film transistors |
| US7116302B2 (en) | 1991-10-16 | 2006-10-03 | Semiconductor Energy Laboratory Co., Ltd. | Process of operating active matrix display device having thin film transistors |
| US5962897A (en) * | 1992-06-18 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6455875B2 (en) | 1992-10-09 | 2002-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor having enhanced field mobility |
| US6624477B1 (en) | 1992-10-09 | 2003-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US8017506B2 (en) | 1992-10-09 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US7723788B2 (en) | 1992-10-09 | 2010-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US7602020B2 (en) | 1992-10-09 | 2009-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for forming the same |
| US6790749B2 (en) | 1992-10-09 | 2004-09-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| US7109108B2 (en) | 1992-10-09 | 2006-09-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device having metal silicide |
| JPH06151307A (ja) * | 1993-06-11 | 1994-05-31 | Sanyo Electric Co Ltd | 薄膜トランジスタ回路装置の製造方法 |
| JPH07135323A (ja) * | 1993-10-20 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体集積回路およびその作製方法 |
| JPH07202215A (ja) * | 1994-12-05 | 1995-08-04 | Hitachi Ltd | 薄膜半導体装置とその製造方法 |
| JPH0950045A (ja) * | 1995-12-15 | 1997-02-18 | Seiko Instr Inc | 半導体装置、光弁装置およびプロジェクション装置 |
| US6472297B1 (en) | 1998-03-31 | 2002-10-29 | Matsushita Electric Industrial Co., Ltd. | Method of producing TFT array substrate for liquid crystal display device |
| JP2003168691A (ja) * | 2001-11-30 | 2003-06-13 | Fujitsu Ltd | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0261032B2 (enrdf_load_stackoverflow) | 1990-12-18 |
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