JPS5840851A - 相補型ｍｏｓ半導体装置及びその製造方法 - Google Patents

相補型ｍｏｓ半導体装置及びその製造方法

Info

Publication number
JPS5840851A
JPS5840851A JP56138831A JP13883181A JPS5840851A JP S5840851 A JPS5840851 A JP S5840851A JP 56138831 A JP56138831 A JP 56138831A JP 13883181 A JP13883181 A JP 13883181A JP S5840851 A JPS5840851 A JP S5840851A
Authority
JP
Japan
Prior art keywords
substrate
region
layer
conductivity type
element isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56138831A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0324068B2 (enExample
Inventor
Satoru Maeda
哲 前田
Hiroshi Iwai
洋 岩井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56138831A priority Critical patent/JPS5840851A/ja
Priority to US06/307,877 priority patent/US4560421A/en
Publication of JPS5840851A publication Critical patent/JPS5840851A/ja
Publication of JPH0324068B2 publication Critical patent/JPH0324068B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W10/018—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
    • H10P14/271—
    • H10P14/2905—
    • H10P14/3411—
    • H10W10/10—

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP56138831A 1980-10-02 1981-09-03 相補型ｍｏｓ半導体装置及びその製造方法 Granted JPS5840851A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56138831A JPS5840851A (ja) 1981-09-03 1981-09-03 相補型ｍｏｓ半導体装置及びその製造方法
US06/307,877 US4560421A (en) 1980-10-02 1981-10-02 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56138831A JPS5840851A (ja) 1981-09-03 1981-09-03 相補型ｍｏｓ半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS5840851A true JPS5840851A (ja) 1983-03-09
JPH0324068B2 JPH0324068B2 (enExample) 1991-04-02

Family

ID=15231235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56138831A Granted JPS5840851A (ja) 1980-10-02 1981-09-03 相補型ｍｏｓ半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS5840851A (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030169A (ja) * 1983-07-29 1985-02-15 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法
JPS6074664A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 相補型ｍｏｓ半導体装置の製造方法
JPS6074564A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 半導体記憶装置
JPS6089957A (ja) * 1983-10-24 1985-05-20 Nippon Telegr & Teleph Corp <Ntt> 相補形半導体装置
JPS6239047A (ja) * 1985-08-13 1987-02-20 Toppan Printing Co Ltd Ｃｍｏｓ型集積回路素子
JPH061756U (ja) * 1992-06-17 1994-01-14 小松ゼノア株式会社 気化器のカバー

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030169A (ja) * 1983-07-29 1985-02-15 Toshiba Corp 相補型ｍｏｓ半導体装置及びその製造方法
JPS6074664A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 相補型ｍｏｓ半導体装置の製造方法
JPS6074564A (ja) * 1983-09-30 1985-04-26 Toshiba Corp 半導体記憶装置
JPS6089957A (ja) * 1983-10-24 1985-05-20 Nippon Telegr & Teleph Corp <Ntt> 相補形半導体装置
JPS6239047A (ja) * 1985-08-13 1987-02-20 Toppan Printing Co Ltd Ｃｍｏｓ型集積回路素子
JPH061756U (ja) * 1992-06-17 1994-01-14 小松ゼノア株式会社 気化器のカバー

Also Published As

Publication number Publication date
JPH0324068B2 (enExample) 1991-04-02

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