JPS5836505B2 - 半導体記憶装置の製造方法 - Google Patents

半導体記憶装置の製造方法

Info

Publication number
JPS5836505B2
JPS5836505B2 JP55089375A JP8937580A JPS5836505B2 JP S5836505 B2 JPS5836505 B2 JP S5836505B2 JP 55089375 A JP55089375 A JP 55089375A JP 8937580 A JP8937580 A JP 8937580A JP S5836505 B2 JPS5836505 B2 JP S5836505B2
Authority
JP
Japan
Prior art keywords
oxide film
region
impurity
forming
metal silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55089375A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5713755A (en
Inventor
信市 井上
元 石川
信夫 豊蔵
博 堀江
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55089375A priority Critical patent/JPS5836505B2/ja
Publication of JPS5713755A publication Critical patent/JPS5713755A/ja
Publication of JPS5836505B2 publication Critical patent/JPS5836505B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
JP55089375A 1980-06-30 1980-06-30 半導体記憶装置の製造方法 Expired JPS5836505B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55089375A JPS5836505B2 (ja) 1980-06-30 1980-06-30 半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55089375A JPS5836505B2 (ja) 1980-06-30 1980-06-30 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5713755A JPS5713755A (en) 1982-01-23
JPS5836505B2 true JPS5836505B2 (ja) 1983-08-09

Family

ID=13968932

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55089375A Expired JPS5836505B2 (ja) 1980-06-30 1980-06-30 半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5836505B2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4450620A (en) * 1983-02-18 1984-05-29 Bell Telephone Laboratories, Incorporated Fabrication of MOS integrated circuit devices
JPS6014852U (ja) * 1983-07-07 1985-01-31 屋敷　静雄 スベリドメ付きドライバ−
JP2527162Y2 (ja) * 1989-05-17 1997-02-26 スズキ株式会社 自動二輪車のスロットルグリップ装置
DE4304450A1 (de) * 1993-02-13 1994-08-18 Boehringer Mannheim Gmbh System zur Zubereitung von Flüssigkeiten

Also Published As

Publication number Publication date
JPS5713755A (en) 1982-01-23

Similar Documents

Publication Publication Date Title
US4925807A (en) Method of manufacturing a semiconductor device
JPS61179567A (ja) 自己整合積層ｃｍｏｓ構造の製造方法
JPS5836505B2 (ja) 半導体記憶装置の製造方法
JPH03227516A (ja) 半導体装置の製造方法
KR100223736B1 (ko) 반도체 소자 제조 방법
JPS6197975A (ja) 半導体装置の製造方法
US4653173A (en) Method of manufacturing an insulated gate field effect device
KR100255008B1 (ko) 반도체장치의 제조방법
JP2809393B2 (ja) 半導体装置の製造方法
JPH0227769A (ja) 半導体装置
JPH06163576A (ja) 半導体装置の製造方法
JPH04303944A (ja) 半導体装置の製造方法
JPS6068655A (ja) Ｍｏｓ型トランジスタの製造方法
JPH01143358A (ja) Ｍｏｓ型半導体集積回路装置の製造方法
JPS63164357A (ja) 半導体装置の製造方法
KR19980058438A (ko) 반도체 소자의 실리사이드 형성 방법
JPS61156883A (ja) 半導体装置の製造方法
JP2658163B2 (ja) Ｍｉｓ型半導体装置の製造方法
JPS6154661A (ja) 半導体装置の製造方法
JP3030569B2 (ja) 不揮発性半導体メモリの製造方法
JPH0226034A (ja) 半導体装置の製造方法
JPH0846191A (ja) 半導体装置の製造方法
JPH07106443A (ja) 不揮発性半導体記憶装置及びその製造方法
JPH025411A (ja) 半導体装置の製造方法
JPH02267943A (ja) Ｍｉｓ型半導体装置の製造方法