JPS5834970A - 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ - Google Patents

埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Info

Publication number
JPS5834970A
JPS5834970A JP56134711A JP13471181A JPS5834970A JP S5834970 A JPS5834970 A JP S5834970A JP 56134711 A JP56134711 A JP 56134711A JP 13471181 A JP13471181 A JP 13471181A JP S5834970 A JPS5834970 A JP S5834970A
Authority
JP
Japan
Prior art keywords
layer
thyristor
turn
gate
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56134711A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362907B2 (enrdf_load_stackoverflow
Inventor
Yasuhide Hayashi
林　泰英
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Corp
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Corp, Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Corp
Priority to JP56134711A priority Critical patent/JPS5834970A/ja
Publication of JPS5834970A publication Critical patent/JPS5834970A/ja
Publication of JPS6362907B2 publication Critical patent/JPS6362907B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP56134711A 1981-08-27 1981-08-27 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ Granted JPS5834970A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56134711A JPS5834970A (ja) 1981-08-27 1981-08-27 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56134711A JPS5834970A (ja) 1981-08-27 1981-08-27 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
JPS5834970A true JPS5834970A (ja) 1983-03-01
JPS6362907B2 JPS6362907B2 (enrdf_load_stackoverflow) 1988-12-05

Family

ID=15134807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56134711A Granted JPS5834970A (ja) 1981-08-27 1981-08-27 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Country Status (1)

Country Link
JP (1) JPS5834970A (enrdf_load_stackoverflow)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422179A (en) * 1977-07-20 1979-02-19 Hitachi Ltd Semiconductor switching element
JPS5476080A (en) * 1977-11-30 1979-06-18 Meidensha Electric Mfg Co Ltd Semiconductor device
JPS5477585A (en) * 1977-12-02 1979-06-21 Meidensha Electric Mfg Co Ltd Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5422179A (en) * 1977-07-20 1979-02-19 Hitachi Ltd Semiconductor switching element
JPS5476080A (en) * 1977-11-30 1979-06-18 Meidensha Electric Mfg Co Ltd Semiconductor device
JPS5477585A (en) * 1977-12-02 1979-06-21 Meidensha Electric Mfg Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS6362907B2 (enrdf_load_stackoverflow) 1988-12-05

Similar Documents

Publication Publication Date Title
US3761785A (en) Methods for making transistor structures
EP0570595A1 (en) Vertical insulated gate semiconductor device and method for its manufacture
US4697201A (en) Power MOS FET with decreased resistance in the conducting state
JPH03136371A (ja) サイリスタ及びその製造方法
JPH01218067A (ja) バイポーラ型半導体スイッチング装置
JPH0481345B2 (enrdf_load_stackoverflow)
JP3063278B2 (ja) 縦型電界効果トランジスタ
JPS5834970A (ja) 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ
JPS6353972A (ja) 複合半導体装置
JPH0669093B2 (ja) 半導体素子の製造方法
JPH0136711B2 (enrdf_load_stackoverflow)
JP2829026B2 (ja) 自己消弧型半導体素子
JPH0358482A (ja) ターンオフゲート付きサイリスタ
JPS5850433B2 (ja) 半導体装置
JPS6128224B2 (enrdf_load_stackoverflow)
JPH05326930A (ja) ゲートターンオフサイリスタ
JPS62141774A (ja) Ｇｔｏサイリスタ
JPH0691245B2 (ja) ゲ−トタ−ンオフサイリスタ
JPH04133353A (ja) 半導体装置
JPH0697462A (ja) 半導体装置
JPH02177337A (ja) ショットキゲート電界効果トランジスタの製造方法
JPS5918871B2 (ja) 半導体集積回路
JPH06120485A (ja) 電力制御用半導体素子
JPH05235011A (ja) 半導体装置
JPS61287269A (ja) 半導体素子