JPS6362907B2 - - Google Patents

Info

Publication number
JPS6362907B2
JPS6362907B2 JP56134711A JP13471181A JPS6362907B2 JP S6362907 B2 JPS6362907 B2 JP S6362907B2 JP 56134711 A JP56134711 A JP 56134711A JP 13471181 A JP13471181 A JP 13471181A JP S6362907 B2 JPS6362907 B2 JP S6362907B2
Authority
JP
Japan
Prior art keywords
layer
gate
width
slit
thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56134711A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5834970A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP56134711A priority Critical patent/JPS5834970A/ja
Publication of JPS5834970A publication Critical patent/JPS5834970A/ja
Publication of JPS6362907B2 publication Critical patent/JPS6362907B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
JP56134711A 1981-08-27 1981-08-27 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ Granted JPS5834970A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56134711A JPS5834970A (ja) 1981-08-27 1981-08-27 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56134711A JPS5834970A (ja) 1981-08-27 1981-08-27 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
JPS5834970A JPS5834970A (ja) 1983-03-01
JPS6362907B2 true JPS6362907B2 (enrdf_load_stackoverflow) 1988-12-05

Family

ID=15134807

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56134711A Granted JPS5834970A (ja) 1981-08-27 1981-08-27 埋込ゲ−ト型ゲ−トタ−ンオフサイリスタ

Country Status (1)

Country Link
JP (1) JPS5834970A (enrdf_load_stackoverflow)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5940303B2 (ja) * 1977-07-20 1984-09-29 株式会社日立製作所 半導体スイツチング素子
JPS5476080A (en) * 1977-11-30 1979-06-18 Meidensha Electric Mfg Co Ltd Semiconductor device
JPS5477585A (en) * 1977-12-02 1979-06-21 Meidensha Electric Mfg Co Ltd Semiconductor device

Also Published As

Publication number Publication date
JPS5834970A (ja) 1983-03-01

Similar Documents

Publication Publication Date Title
US4038680A (en) Semiconductor integrated circuit device
US4051506A (en) Complementary semiconductor device
JPH0626253B2 (ja) 長さの短い拡散領域を含む半導体素子の製造方法
US4323913A (en) Integrated semiconductor circuit arrangement
US4819055A (en) Semiconductor device having a PN junction formed on an insulator film
GB1593937A (en) I2l integrated circuitry
JPH0582986B2 (enrdf_load_stackoverflow)
JPS6362907B2 (enrdf_load_stackoverflow)
JPS6245710B2 (enrdf_load_stackoverflow)
JPS6327865B2 (enrdf_load_stackoverflow)
JP2518929B2 (ja) バイポ―ラ型半導体集積回路
JP2760401B2 (ja) 誘電体分離基板及び半導体装置
JPH0550858B2 (enrdf_load_stackoverflow)
JPS6140140B2 (enrdf_load_stackoverflow)
KR0137568B1 (ko) 바이폴라 트랜지스터의 제조방법
JPH0136711B2 (enrdf_load_stackoverflow)
KR930000714B1 (ko) 반도체 집적회로의 구조 및 제조방법
JP3183037B2 (ja) 絶縁ゲートバイポーラトランジスタ
KR900008818B1 (ko) 쌍극성 집적회로소자 제조방법
JPS6152575B2 (enrdf_load_stackoverflow)
JPH0691245B2 (ja) ゲ−トタ−ンオフサイリスタ
JPS61269373A (ja) 半導体装置
JPS59134B2 (ja) 半導体集積回路装置
JPH02232929A (ja) 埋込層を備えた半導体装置
JPH0653310A (ja) 半導体装置およびその製造方法