JPS5825226A - プラズマ気相反応装置 - Google Patents
プラズマ気相反応装置Info
- Publication number
- JPS5825226A JPS5825226A JP57126046A JP12604682A JPS5825226A JP S5825226 A JPS5825226 A JP S5825226A JP 57126046 A JP57126046 A JP 57126046A JP 12604682 A JP12604682 A JP 12604682A JP S5825226 A JPS5825226 A JP S5825226A
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- semiconductor layer
- chamber
- substrate
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 73
- 238000006243 chemical reaction Methods 0.000 claims abstract description 52
- 239000007789 gas Substances 0.000 claims abstract description 35
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 29
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 28
- 239000012535 impurity Substances 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 18
- 239000013078 crystal Substances 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 239000012808 vapor phase Substances 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 239000007795 chemical reaction product Substances 0.000 claims description 5
- 238000010574 gas phase reaction Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 42
- 238000000034 method Methods 0.000 abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 6
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 3
- 241000206607 Porphyra umbilicalis Species 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 51
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 21
- 229910052799 carbon Inorganic materials 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 238000000576 coating method Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- 150000001721 carbon Chemical class 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 150000003376 silicon Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 230000003472 neutralizing effect Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 101100240308 Homo sapiens NDUFC2 gene Proteins 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- YQEZLKZALYSWHR-UHFFFAOYSA-N Ketamine Chemical compound C=1C=CC=C(Cl)C=1C1(NC)CCCCC1=O YQEZLKZALYSWHR-UHFFFAOYSA-N 0.000 description 1
- 102100035386 NADH dehydrogenase [ubiquinone] 1 subunit C2 Human genes 0.000 description 1
- 241000277269 Oncorhynchus masou Species 0.000 description 1
- 101100462115 Oryza sativa subsp. japonica HK1 gene Proteins 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- NUHSROFQTUXZQQ-UHFFFAOYSA-N isopentenyl diphosphate Chemical compound CC(=C)CCO[P@](O)(=O)OP(O)(O)=O NUHSROFQTUXZQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- -1 panicle Natural products 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57126046A JPS5825226A (ja) | 1982-07-19 | 1982-07-19 | プラズマ気相反応装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57126046A JPS5825226A (ja) | 1982-07-19 | 1982-07-19 | プラズマ気相反応装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15288778A Division JPS5578524A (en) | 1978-12-10 | 1978-12-10 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5825226A true JPS5825226A (ja) | 1983-02-15 |
| JPS6243536B2 JPS6243536B2 (enrdf_load_stackoverflow) | 1987-09-14 |
Family
ID=14925306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57126046A Granted JPS5825226A (ja) | 1982-07-19 | 1982-07-19 | プラズマ気相反応装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5825226A (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6067673A (ja) * | 1983-09-22 | 1985-04-18 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
| JPS60189274A (ja) * | 1984-02-14 | 1985-09-26 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | 半導体素子の製造方法 |
| JPS6183700A (ja) * | 1984-09-28 | 1986-04-28 | Hitachi Ltd | 気相エピタキシヤル成長方法およびその装置 |
| JPS6289875A (ja) * | 1985-10-14 | 1987-04-24 | Semiconductor Energy Lab Co Ltd | 薄膜形成装置 |
| JPS6373363U (enrdf_load_stackoverflow) * | 1986-10-31 | 1988-05-16 | ||
| JPH0195515A (ja) * | 1987-10-07 | 1989-04-13 | Matsushita Electric Ind Co Ltd | ヘテロ接合素子の製造方法 |
| US5162255A (en) * | 1989-04-27 | 1992-11-10 | Fujitsu Limited | Method for manufacturing a hetero bipolar transistor |
| US8091668B2 (en) | 2008-11-06 | 2012-01-10 | Toyoda Jidosha Kabushiki Kaisha | Motor vehicle and control method of motor vehicle |
| JP2021116458A (ja) * | 2020-01-27 | 2021-08-10 | 住友金属鉱山株式会社 | 炭化ケイ素多結晶基板の製造方法 |
-
1982
- 1982-07-19 JP JP57126046A patent/JPS5825226A/ja active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6067673A (ja) * | 1983-09-22 | 1985-04-18 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
| JPS60189274A (ja) * | 1984-02-14 | 1985-09-26 | エナージー・コンバーシヨン・デバイセス・インコーポレーテツド | 半導体素子の製造方法 |
| JPS6183700A (ja) * | 1984-09-28 | 1986-04-28 | Hitachi Ltd | 気相エピタキシヤル成長方法およびその装置 |
| JPS6289875A (ja) * | 1985-10-14 | 1987-04-24 | Semiconductor Energy Lab Co Ltd | 薄膜形成装置 |
| JPS6373363U (enrdf_load_stackoverflow) * | 1986-10-31 | 1988-05-16 | ||
| JPH0195515A (ja) * | 1987-10-07 | 1989-04-13 | Matsushita Electric Ind Co Ltd | ヘテロ接合素子の製造方法 |
| US5162255A (en) * | 1989-04-27 | 1992-11-10 | Fujitsu Limited | Method for manufacturing a hetero bipolar transistor |
| US8091668B2 (en) | 2008-11-06 | 2012-01-10 | Toyoda Jidosha Kabushiki Kaisha | Motor vehicle and control method of motor vehicle |
| JP2021116458A (ja) * | 2020-01-27 | 2021-08-10 | 住友金属鉱山株式会社 | 炭化ケイ素多結晶基板の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6243536B2 (enrdf_load_stackoverflow) | 1987-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6620709B2 (en) | Fabrication of semiconductor materials and devices with controlled electrical conductivity | |
| US4404265A (en) | Epitaxial composite and method of making | |
| US4368098A (en) | Epitaxial composite and method of making | |
| US7033921B2 (en) | Method and device for depositing crystalline layers on crystalline substrates | |
| US4147571A (en) | Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system | |
| EP0179138B1 (en) | A method of forming a composite semiconductor structure | |
| US4987008A (en) | Thin film formation method | |
| EP0607435A1 (en) | Nitride based semiconductor device and manufacture thereof | |
| US20110284079A1 (en) | Solar cell, and method of manufacturing the same | |
| CN101522942B (zh) | Ⅲ族氮化物化合物半导体叠层结构体的成膜方法 | |
| JPH10326911A (ja) | ｐ型ＩＩＩ族ナイトライド化合物半導体およびその製造方法 | |
| TW201106502A (en) | Cluster tool for LEDs | |
| WO2008096884A1 (ja) | ｎ型導電性窒化アルミニウム半導体結晶及びその製造方法 | |
| JPS5825226A (ja) | プラズマ気相反応装置 | |
| JPS6043819A (ja) | 気相反応方法 | |
| JP3306578B2 (ja) | 化合物半導体エピタキシャルウエハ | |
| JP4465748B2 (ja) | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 | |
| US5891790A (en) | Method for the growth of P-type gallium nitride and its alloys | |
| JP5314233B2 (ja) | 制御された導電率を有する半導体材料および半導体デバイスの製造方法 | |
| US3839082A (en) | Epitaxial growth process for iii-v mixed-compound semiconductor crystals | |
| JP3695416B2 (ja) | リン化硼素系半導体層、その製造方法、及びリン化硼素系半導体素子 | |
| JPS6236632B2 (enrdf_load_stackoverflow) | ||
| JPS5916328A (ja) | プラズマ気相反応装置 | |
| JPS5952833A (ja) | プラズマ気相反応装置 | |
| JP3221359B2 (ja) | ｐ形ＩＩＩ族窒化物半導体層及びその形成方法 |