JPS5823952B2 - シヨツトキ−障壁装置 - Google Patents

シヨツトキ−障壁装置

Info

Publication number
JPS5823952B2
JPS5823952B2 JP52148249A JP14824977A JPS5823952B2 JP S5823952 B2 JPS5823952 B2 JP S5823952B2 JP 52148249 A JP52148249 A JP 52148249A JP 14824977 A JP14824977 A JP 14824977A JP S5823952 B2 JPS5823952 B2 JP S5823952B2
Authority
JP
Japan
Prior art keywords
aluminum
annealing
layer
schottky barrier
intermetallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52148249A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5384464A (en
Inventor
ウイリアム・デビツド・ローゼンバーグ
ジエームス・ケント・ハワード
ジエームス・フランシス・ホワイト
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5384464A publication Critical patent/JPS5384464A/ja
Publication of JPS5823952B2 publication Critical patent/JPS5823952B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/012—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/0121—Manufacture or treatment of electrodes comprising a Schottky barrier to a semiconductor to Group IV semiconductors

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP52148249A 1976-12-29 1977-12-12 シヨツトキ−障壁装置 Expired JPS5823952B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/755,272 US4141020A (en) 1976-12-29 1976-12-29 Intermetallic aluminum-transition metal compound Schottky contact

Publications (2)

Publication Number Publication Date
JPS5384464A JPS5384464A (en) 1978-07-25
JPS5823952B2 true JPS5823952B2 (ja) 1983-05-18

Family

ID=25038445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52148249A Expired JPS5823952B2 (ja) 1976-12-29 1977-12-12 シヨツトキ−障壁装置

Country Status (7)

Country Link
US (1) US4141020A (online.php)
JP (1) JPS5823952B2 (online.php)
CA (1) CA1079867A (online.php)
DE (1) DE2754861C2 (online.php)
FR (1) FR2376519A1 (online.php)
GB (1) GB1588257A (online.php)
IT (1) IT1115690B (online.php)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4310568A (en) * 1976-12-29 1982-01-12 International Business Machines Corporation Method of fabricating improved Schottky barrier contacts
US4206472A (en) * 1977-12-27 1980-06-03 International Business Machines Corporation Thin film structures and method for fabricating same
US4214256A (en) * 1978-09-08 1980-07-22 International Business Machines Corporation Tantalum semiconductor contacts and method for fabricating same
US4201999A (en) * 1978-09-22 1980-05-06 International Business Machines Corporation Low barrier Schottky diodes
US4300149A (en) * 1979-09-04 1981-11-10 International Business Machines Corporation Gold-tantalum-titanium/tungsten alloy contact for semiconductor devices and having a gold/tantalum intermetallic barrier region intermediate the gold and alloy elements
SE8101994L (sv) * 1981-03-27 1982-09-28 Tove Per Arne Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd
JPS58170059A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体装置
JPS6081859A (ja) * 1983-10-11 1985-05-09 Matsushita Electric Ind Co Ltd シヨツトキ−障壁半導体装置
US4586063A (en) * 1984-04-02 1986-04-29 Oki Electric Industry Co., Ltd. Schottky barrier gate FET including tungsten-aluminum alloy
JPS6373660A (ja) * 1986-09-17 1988-04-04 Fujitsu Ltd 半導体装置
US4847675A (en) * 1987-05-07 1989-07-11 The Aerospace Corporation Stable rare-earth alloy graded junction contact devices using III-V type substrates
US5075755A (en) * 1987-10-20 1991-12-24 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound semiconductors
JP2503269B2 (ja) * 1989-03-16 1996-06-05 沖電気工業株式会社 電界効果トランジスタのゲ―ト電極形成方法
JPH03233972A (ja) * 1990-02-08 1991-10-17 Matsushita Electron Corp 半導体装置用電極およびその製造方法
JPH06163879A (ja) * 1992-11-18 1994-06-10 Nec Corp 半導体装置及びその製造方法
DE4328791C2 (de) * 1993-08-26 1997-07-17 Siemens Matsushita Components Hybrid-Thermistortemperaturfühler
US5693564A (en) * 1994-12-22 1997-12-02 Intel Corporation Conductor fill reflow with intermetallic compound wetting layer for semiconductor fabrication
JPH0945635A (ja) * 1995-07-27 1997-02-14 Mitsubishi Electric Corp 半導体装置の製造方法，及び半導体装置
SG55246A1 (en) * 1995-12-29 1998-12-21 Ibm Aluminum alloy for the damascene process for on-chip wiring applications
US5933753A (en) * 1996-12-16 1999-08-03 International Business Machines Corporation Open-bottomed via liner structure and method for fabricating same
US6576547B2 (en) 1998-03-05 2003-06-10 Micron Technology, Inc. Residue-free contact openings and methods for fabricating same
JP2003142732A (ja) * 2001-10-31 2003-05-16 Sharp Corp オーミック電極、ｎ型電極、窒化物系化合物半導体発光素子およびその製造方法
US6794753B2 (en) * 2002-12-27 2004-09-21 Lexmark International, Inc. Diffusion barrier and method therefor
US9853025B1 (en) * 2016-10-14 2017-12-26 International Business Machines Corporation Thin film metallic resistors formed by surface treatment of insulating layer
CN110121789A (zh) * 2017-10-04 2019-08-13 松下知识产权经营株式会社 光器件、光电转换装置及燃料生成装置
JP7507438B2 (ja) * 2019-03-29 2024-06-28 パナソニックＩｐマネジメント株式会社 光デバイス、光電変換装置、および燃料生成装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
NL6911534A (online.php) * 1968-08-01 1970-02-03
US4009481A (en) * 1969-12-15 1977-02-22 Siemens Aktiengesellschaft Metal semiconductor diode
US3669730A (en) * 1970-04-24 1972-06-13 Bell Telephone Labor Inc Modifying barrier layer devices
US3652905A (en) * 1970-05-26 1972-03-28 Westinghouse Electric Corp Schottky barrier power rectifier
US3780320A (en) * 1971-12-20 1973-12-18 Ibm Schottky barrier diode read-only memory
NL7208995A (online.php) * 1972-06-29 1974-01-02
JPS4979461A (online.php) * 1972-12-05 1974-07-31
US3995301A (en) * 1973-03-23 1976-11-30 Ibm Corporation Novel integratable Schottky Barrier structure and a method for the fabrication thereof
JPS5168775A (en) * 1974-12-11 1976-06-14 Fujitsu Ltd Handotaisochino seizohoho
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance

Also Published As

Publication number Publication date
US4141020A (en) 1979-02-20
DE2754861C2 (de) 1983-11-17
GB1588257A (en) 1981-04-23
DE2754861A1 (de) 1978-07-06
IT1115690B (it) 1986-02-03
FR2376519B1 (online.php) 1983-02-04
JPS5384464A (en) 1978-07-25
CA1079867A (en) 1980-06-17
FR2376519A1 (fr) 1978-07-28

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