FR2376519A1 - Dispositif a barriere de schottky ameliore et son procede de fabrication - Google Patents

Dispositif a barriere de schottky ameliore et son procede de fabrication

Info

Publication number
FR2376519A1
FR2376519A1 FR7735961A FR7735961A FR2376519A1 FR 2376519 A1 FR2376519 A1 FR 2376519A1 FR 7735961 A FR7735961 A FR 7735961A FR 7735961 A FR7735961 A FR 7735961A FR 2376519 A1 FR2376519 A1 FR 2376519A1
Authority
FR
France
Prior art keywords
barrier device
schottky
manufacturing process
improved barrier
schottky barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7735961A
Other languages
English (en)
Other versions
FR2376519B1 (fr
Inventor
James K Howard
William D Rosenberg
James F White
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2376519A1 publication Critical patent/FR2376519A1/fr
Application granted granted Critical
Publication of FR2376519B1 publication Critical patent/FR2376519B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28537—Deposition of Schottky electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Dispositif à barrière de Schottky amélioré et son procédé de fabrication. Ce procédé comprend la formation d'un composé intermétallique d'aluminium et d'un métal de transition choisi dans le groupe comprenant Ta, Ti, Nb, Zr et Ni comme contact à barrière de Schottky. Le procédé inclut une étape de recuit à une température supérieure à 300 degrés C. Application à la fabrication des dispositifs à semi-conducteurs.
FR7735961A 1976-12-29 1977-11-21 Dispositif a barriere de schottky ameliore et son procede de fabrication Granted FR2376519A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/755,272 US4141020A (en) 1976-12-29 1976-12-29 Intermetallic aluminum-transition metal compound Schottky contact

Publications (2)

Publication Number Publication Date
FR2376519A1 true FR2376519A1 (fr) 1978-07-28
FR2376519B1 FR2376519B1 (fr) 1983-02-04

Family

ID=25038445

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7735961A Granted FR2376519A1 (fr) 1976-12-29 1977-11-21 Dispositif a barriere de schottky ameliore et son procede de fabrication

Country Status (7)

Country Link
US (1) US4141020A (fr)
JP (1) JPS5823952B2 (fr)
CA (1) CA1079867A (fr)
DE (1) DE2754861C2 (fr)
FR (1) FR2376519A1 (fr)
GB (1) GB1588257A (fr)
IT (1) IT1115690B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024572A2 (fr) * 1979-09-04 1981-03-11 International Business Machines Corporation Structure électroconductive à contact ou à métallisation pour substrats semiconducteurs

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4310568A (en) * 1976-12-29 1982-01-12 International Business Machines Corporation Method of fabricating improved Schottky barrier contacts
US4206472A (en) * 1977-12-27 1980-06-03 International Business Machines Corporation Thin film structures and method for fabricating same
US4214256A (en) * 1978-09-08 1980-07-22 International Business Machines Corporation Tantalum semiconductor contacts and method for fabricating same
US4201999A (en) * 1978-09-22 1980-05-06 International Business Machines Corporation Low barrier Schottky diodes
SE8101994L (sv) * 1981-03-27 1982-09-28 Tove Per Arne Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd
JPS58170059A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 半導体装置
JPS6081859A (ja) * 1983-10-11 1985-05-09 Matsushita Electric Ind Co Ltd シヨツトキ−障壁半導体装置
US4586063A (en) * 1984-04-02 1986-04-29 Oki Electric Industry Co., Ltd. Schottky barrier gate FET including tungsten-aluminum alloy
JPS6373660A (ja) * 1986-09-17 1988-04-04 Fujitsu Ltd 半導体装置
US4847675A (en) * 1987-05-07 1989-07-11 The Aerospace Corporation Stable rare-earth alloy graded junction contact devices using III-V type substrates
US5075755A (en) * 1987-10-20 1991-12-24 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound semiconductors
JP2503269B2 (ja) * 1989-03-16 1996-06-05 沖電気工業株式会社 電界効果トランジスタのゲ―ト電極形成方法
JPH03233972A (ja) * 1990-02-08 1991-10-17 Matsushita Electron Corp 半導体装置用電極およびその製造方法
JPH06163879A (ja) * 1992-11-18 1994-06-10 Nec Corp 半導体装置及びその製造方法
DE4328791C2 (de) * 1993-08-26 1997-07-17 Siemens Matsushita Components Hybrid-Thermistortemperaturfühler
US5693564A (en) * 1994-12-22 1997-12-02 Intel Corporation Conductor fill reflow with intermetallic compound wetting layer for semiconductor fabrication
JPH0945635A (ja) * 1995-07-27 1997-02-14 Mitsubishi Electric Corp 半導体装置の製造方法，及び半導体装置
SG55246A1 (en) * 1995-12-29 1998-12-21 Ibm Aluminum alloy for the damascene process for on-chip wiring applications
US5933753A (en) * 1996-12-16 1999-08-03 International Business Machines Corporation Open-bottomed via liner structure and method for fabricating same
US6576547B2 (en) 1998-03-05 2003-06-10 Micron Technology, Inc. Residue-free contact openings and methods for fabricating same
JP2003142732A (ja) * 2001-10-31 2003-05-16 Sharp Corp オーミック電極、ｎ型電極、窒化物系化合物半導体発光素子およびその製造方法
US6794753B2 (en) * 2002-12-27 2004-09-21 Lexmark International, Inc. Diffusion barrier and method therefor
US9853025B1 (en) * 2016-10-14 2017-12-26 International Business Machines Corporation Thin film metallic resistors formed by surface treatment of insulating layer
CN110121789A (zh) * 2017-10-04 2019-08-13 松下知识产权经营株式会社 光器件、光电转换装置及燃料生成装置
JP7507438B2 (ja) * 2019-03-29 2024-06-28 パナソニックＩｐマネジメント株式会社 光デバイス、光電変換装置、および燃料生成装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3669730A (en) * 1970-04-24 1972-06-13 Bell Telephone Labor Inc Modifying barrier layer devices
FR2191268A1 (fr) * 1972-06-29 1974-02-01 Philips Nv

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506893A (en) * 1968-06-27 1970-04-14 Ibm Integrated circuits with surface barrier diodes
NL6911534A (fr) * 1968-08-01 1970-02-03
US4009481A (en) * 1969-12-15 1977-02-22 Siemens Aktiengesellschaft Metal semiconductor diode
US3652905A (en) * 1970-05-26 1972-03-28 Westinghouse Electric Corp Schottky barrier power rectifier
US3780320A (en) * 1971-12-20 1973-12-18 Ibm Schottky barrier diode read-only memory
JPS4979461A (fr) * 1972-12-05 1974-07-31
US3995301A (en) * 1973-03-23 1976-11-30 Ibm Corporation Novel integratable Schottky Barrier structure and a method for the fabrication thereof
JPS5168775A (en) * 1974-12-11 1976-06-14 Fujitsu Ltd Handotaisochino seizohoho
US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3669730A (en) * 1970-04-24 1972-06-13 Bell Telephone Labor Inc Modifying barrier layer devices
FR2191268A1 (fr) * 1972-06-29 1974-02-01 Philips Nv

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024572A2 (fr) * 1979-09-04 1981-03-11 International Business Machines Corporation Structure électroconductive à contact ou à métallisation pour substrats semiconducteurs
EP0024572A3 (en) * 1979-09-04 1983-07-20 International Business Machines Corporation Electrically conductive contact or metallizing structure for semiconductor substrates

Also Published As

Publication number Publication date
JPS5384464A (en) 1978-07-25
IT1115690B (it) 1986-02-03
US4141020A (en) 1979-02-20
FR2376519B1 (fr) 1983-02-04
DE2754861C2 (de) 1983-11-17
GB1588257A (en) 1981-04-23
CA1079867A (fr) 1980-06-17
DE2754861A1 (de) 1978-07-06
JPS5823952B2 (ja) 1983-05-18

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