JPS58218126A - リフトオフ加工用真空蒸着装置およびその使用方法 - Google Patents

リフトオフ加工用真空蒸着装置およびその使用方法

Info

Publication number
JPS58218126A
JPS58218126A JP57100585A JP10058582A JPS58218126A JP S58218126 A JPS58218126 A JP S58218126A JP 57100585 A JP57100585 A JP 57100585A JP 10058582 A JP10058582 A JP 10058582A JP S58218126 A JPS58218126 A JP S58218126A
Authority
JP
Japan
Prior art keywords
substrate
vacuum
oxygen gas
ultraviolet light
ultraviolet rays
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57100585A
Other languages
English (en)
Japanese (ja)
Other versions
JPS649727B2 (https=
Inventor
Yoshiaki Mimura
三村　義昭
Yuji Hasumi
蓮見　裕二
Takao Waho
孝夫 和保
Fumihiko Yanagawa
柳川　文彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57100585A priority Critical patent/JPS58218126A/ja
Publication of JPS58218126A publication Critical patent/JPS58218126A/ja
Publication of JPS649727B2 publication Critical patent/JPS649727B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Physical Vapour Deposition (AREA)
  • Weting (AREA)
JP57100585A 1982-06-14 1982-06-14 リフトオフ加工用真空蒸着装置およびその使用方法 Granted JPS58218126A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57100585A JPS58218126A (ja) 1982-06-14 1982-06-14 リフトオフ加工用真空蒸着装置およびその使用方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57100585A JPS58218126A (ja) 1982-06-14 1982-06-14 リフトオフ加工用真空蒸着装置およびその使用方法

Publications (2)

Publication Number Publication Date
JPS58218126A true JPS58218126A (ja) 1983-12-19
JPS649727B2 JPS649727B2 (https=) 1989-02-20

Family

ID=14277956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57100585A Granted JPS58218126A (ja) 1982-06-14 1982-06-14 リフトオフ加工用真空蒸着装置およびその使用方法

Country Status (1)

Country Link
JP (1) JPS58218126A (https=)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232332A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法
JPS63232330A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法
JPS63232331A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法
JPS63234529A (ja) * 1987-03-24 1988-09-29 Ushio Inc レジスト処理方法
JPS63234527A (ja) * 1987-03-24 1988-09-29 Ushio Inc レジスト処理方法
JPH0247255A (ja) * 1988-08-05 1990-02-16 Matsushita Electric Ind Co Ltd 酸化物薄膜製造法
JPH02275618A (ja) * 1989-04-17 1990-11-09 Nec Corp 半導体装置の製造方法
US6143473A (en) * 1998-05-20 2000-11-07 Fujitsu Limited Film patterning method utilizing post-development residue remover

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232332A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法
JPS63232330A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法
JPS63232331A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法
JPS63234529A (ja) * 1987-03-24 1988-09-29 Ushio Inc レジスト処理方法
JPS63234527A (ja) * 1987-03-24 1988-09-29 Ushio Inc レジスト処理方法
JPH0247255A (ja) * 1988-08-05 1990-02-16 Matsushita Electric Ind Co Ltd 酸化物薄膜製造法
JPH02275618A (ja) * 1989-04-17 1990-11-09 Nec Corp 半導体装置の製造方法
US6143473A (en) * 1998-05-20 2000-11-07 Fujitsu Limited Film patterning method utilizing post-development residue remover

Also Published As

Publication number Publication date
JPS649727B2 (https=) 1989-02-20

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