JPS649727B2 - - Google Patents

Info

Publication number
JPS649727B2
JPS649727B2 JP57100585A JP10058582A JPS649727B2 JP S649727 B2 JPS649727 B2 JP S649727B2 JP 57100585 A JP57100585 A JP 57100585A JP 10058582 A JP10058582 A JP 10058582A JP S649727 B2 JPS649727 B2 JP S649727B2
Authority
JP
Japan
Prior art keywords
substrate
vacuum
vacuum chamber
ultraviolet light
lift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57100585A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58218126A (ja
Inventor
Yoshiaki Mimura
Juji Hasumi
Takao Waho
Fumihiko Yanagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP57100585A priority Critical patent/JPS58218126A/ja
Publication of JPS58218126A publication Critical patent/JPS58218126A/ja
Publication of JPS649727B2 publication Critical patent/JPS649727B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Physical Vapour Deposition (AREA)
  • Weting (AREA)
JP57100585A 1982-06-14 1982-06-14 リフトオフ加工用真空蒸着装置およびその使用方法 Granted JPS58218126A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57100585A JPS58218126A (ja) 1982-06-14 1982-06-14 リフトオフ加工用真空蒸着装置およびその使用方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57100585A JPS58218126A (ja) 1982-06-14 1982-06-14 リフトオフ加工用真空蒸着装置およびその使用方法

Publications (2)

Publication Number Publication Date
JPS58218126A JPS58218126A (ja) 1983-12-19
JPS649727B2 true JPS649727B2 (https=) 1989-02-20

Family

ID=14277956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57100585A Granted JPS58218126A (ja) 1982-06-14 1982-06-14 リフトオフ加工用真空蒸着装置およびその使用方法

Country Status (1)

Country Link
JP (1) JPS58218126A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63232332A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法
JPS63232331A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法
JPS63232330A (ja) * 1987-03-20 1988-09-28 Ushio Inc レジスト処理方法
JPS63234527A (ja) * 1987-03-24 1988-09-29 Ushio Inc レジスト処理方法
JPS63234529A (ja) * 1987-03-24 1988-09-29 Ushio Inc レジスト処理方法
JPH0751746B2 (ja) * 1988-08-05 1995-06-05 松下電器産業株式会社 酸化物薄膜製造法
JPH02275618A (ja) * 1989-04-17 1990-11-09 Nec Corp 半導体装置の製造方法
JP4162756B2 (ja) * 1998-05-20 2008-10-08 富士通株式会社 膜のパターニング方法

Also Published As

Publication number Publication date
JPS58218126A (ja) 1983-12-19

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