JPS58200576A - Ｍｏｓ型電界効果トランジスタの製造方法 - Google Patents

Ｍｏｓ型電界効果トランジスタの製造方法

Info

Publication number
JPS58200576A
JPS58200576A JP57082476A JP8247682A JPS58200576A JP S58200576 A JPS58200576 A JP S58200576A JP 57082476 A JP57082476 A JP 57082476A JP 8247682 A JP8247682 A JP 8247682A JP S58200576 A JPS58200576 A JP S58200576A
Authority
JP
Japan
Prior art keywords
region
film
source region
drain
drain region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57082476A
Other languages
English (en)
Japanese (ja)
Other versions
JPH058571B2 (enExample
Inventor
Ken Ogura
小「あ」　謙
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57082476A priority Critical patent/JPS58200576A/ja
Publication of JPS58200576A publication Critical patent/JPS58200576A/ja
Publication of JPH058571B2 publication Critical patent/JPH058571B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
JP57082476A 1982-05-18 1982-05-18 Ｍｏｓ型電界効果トランジスタの製造方法 Granted JPS58200576A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57082476A JPS58200576A (ja) 1982-05-18 1982-05-18 Ｍｏｓ型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57082476A JPS58200576A (ja) 1982-05-18 1982-05-18 Ｍｏｓ型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58200576A true JPS58200576A (ja) 1983-11-22
JPH058571B2 JPH058571B2 (enExample) 1993-02-02

Family

ID=13775562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57082476A Granted JPS58200576A (ja) 1982-05-18 1982-05-18 Ｍｏｓ型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58200576A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5015598A (en) * 1989-11-03 1991-05-14 U.S. Philips Corporation Method of manufacturing a device comprising MIS transistors having a gate electrode in the form of an inverted "T"
US5177027A (en) * 1990-08-17 1993-01-05 Micron Technology, Inc. Process for fabricating, on the edge of a silicon mesa, a MOSFET which has a spacer-shaped gate and a right-angled channel path
US5210435A (en) * 1990-10-12 1993-05-11 Motorola, Inc. ITLDD transistor having a variable work function

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126957A (en) * 1980-03-11 1981-10-05 Toshiba Corp Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126957A (en) * 1980-03-11 1981-10-05 Toshiba Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5015598A (en) * 1989-11-03 1991-05-14 U.S. Philips Corporation Method of manufacturing a device comprising MIS transistors having a gate electrode in the form of an inverted "T"
US5177027A (en) * 1990-08-17 1993-01-05 Micron Technology, Inc. Process for fabricating, on the edge of a silicon mesa, a MOSFET which has a spacer-shaped gate and a right-angled channel path
US5210435A (en) * 1990-10-12 1993-05-11 Motorola, Inc. ITLDD transistor having a variable work function

Also Published As

Publication number Publication date
JPH058571B2 (enExample) 1993-02-02

Similar Documents

Publication Publication Date Title
JPS58118157A (ja) 半導体装置の製造方法
US4520553A (en) Process for manufacturing an integrated insulated-gate field-effect transistor
KR920005323B1 (ko) Bic 메모리셀 구조 및 그의 제조방법
JPS58200576A (ja) Ｍｏｓ型電界効果トランジスタの製造方法
KR950011020B1 (ko) 절연 게이트형 반도체 장치 및 그 제작방법
JPH01130542A (ja) 素子間分離領域を有する半導体装置の製造方法
JPS5989457A (ja) 半導体装置の製造方法
US3623217A (en) Method of manufacturing a field effect semiconductor device
JPS6272171A (ja) 半導体メモリ
JPS62224077A (ja) 半導体集積回路装置
JPS625344B2 (enExample)
JPS61224317A (ja) 導電性電極の製造方法
JP2780711B2 (ja) 半導体装置の製造方法
JPS6336143B2 (enExample)
JPS596579A (ja) 半導体装置
JPS6040696B2 (ja) 半導体装置の製造方法
JPS63142867A (ja) Ｍｉｓトランジスタ及びその製造方法
JPS5947768A (ja) 半導体装置及びその製造方法
JPS5897869A (ja) 半導体装置の製造方法
JPH0213827B2 (enExample)
JPH0258367A (ja) 半導体装置
JPS5875870A (ja) 半導体装置
JPS5917282A (ja) 半導体装置
JPS5931860B2 (ja) 半導体装置
JPS59193061A (ja) 半導体装置