JPS58182442U - 相補型絶縁ゲ−ト電界効果半導体集積回路装置 - Google Patents

相補型絶縁ゲ−ト電界効果半導体集積回路装置

Info

Publication number
JPS58182442U
JPS58182442U JP7996982U JP7996982U JPS58182442U JP S58182442 U JPS58182442 U JP S58182442U JP 7996982 U JP7996982 U JP 7996982U JP 7996982 U JP7996982 U JP 7996982U JP S58182442 U JPS58182442 U JP S58182442U
Authority
JP
Japan
Prior art keywords
integrated circuit
field effect
semiconductor integrated
circuit device
insulated gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7996982U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6345007Y2 (enExample
Inventor
悟 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP7996982U priority Critical patent/JPS58182442U/ja
Publication of JPS58182442U publication Critical patent/JPS58182442U/ja
Application granted granted Critical
Publication of JPS6345007Y2 publication Critical patent/JPS6345007Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP7996982U 1982-05-31 1982-05-31 相補型絶縁ゲ−ト電界効果半導体集積回路装置 Granted JPS58182442U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7996982U JPS58182442U (ja) 1982-05-31 1982-05-31 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7996982U JPS58182442U (ja) 1982-05-31 1982-05-31 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS58182442U true JPS58182442U (ja) 1983-12-05
JPS6345007Y2 JPS6345007Y2 (enExample) 1988-11-22

Family

ID=30089133

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7996982U Granted JPS58182442U (ja) 1982-05-31 1982-05-31 相補型絶縁ゲ−ト電界効果半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS58182442U (enExample)

Also Published As

Publication number Publication date
JPS6345007Y2 (enExample) 1988-11-22

Similar Documents

Publication Publication Date Title
JPS591199U (ja) 半導体メモリ素子
JPS5936262U (ja) 半導体メモリ素子
JPS58182442U (ja) 相補型絶縁ゲ−ト電界効果半導体集積回路装置
JPS618969A (ja) 半導体集積回路装置
JPH01160859U (enExample)
JPS5933259U (ja) Ｃｍｏｓ集積回路
JPS60154661A (ja) 半導体装置
KR850005159A (ko) 기판에 전원 공급 통로를 가진 반도체 집적회로
JPS5815363U (ja) Ｃｍｏｓ集積回路
JPS59164254U (ja) 絶縁ゲ−ト型電界効果トランジスタ
JPS60166158U (ja) メモリーセル
JPS6142860U (ja) 相補型ｍｏｓ半導体装置
JPS60137452U (ja) 相補形ｍｏｓ集積回路
JPS5877065U (ja) 集積回路装置
JPS5916159U (ja) 相補型半導体装置
JPS59151305U (ja) 半導体集積回路
JPH02136340U (enExample)
JPS60166156U (ja) 相補型ｍｏｓ集積回路装置
JPH0241456U (enExample)
JPS58180647U (ja) 接合形電界効果トランジスタ
JPS58129651U (ja) 接合形電界効果トランジスタ
JPS60253262A (ja) Ｍｏｓ集積回路装置
JPS63152168A (ja) 半導体装置
JPH065710B2 (ja) 半導体装置
JPS5945941U (ja) シヨツトキバリアゲ−ト電界効果トランジスタ