JPS58177472A - 反応性イオン食刻装置 - Google Patents

反応性イオン食刻装置

Info

Publication number
JPS58177472A
JPS58177472A JP58003623A JP362383A JPS58177472A JP S58177472 A JPS58177472 A JP S58177472A JP 58003623 A JP58003623 A JP 58003623A JP 362383 A JP362383 A JP 362383A JP S58177472 A JPS58177472 A JP S58177472A
Authority
JP
Japan
Prior art keywords
magnetic field
substrate
etching
cathode
reactive ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58003623A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6136589B2 (cg-RX-API-DMAC10.html
Inventor
クリステイン・ブランデイス
ユルゲン・ケムプフ
ジエオルグ・クラウス
ウルリツヒ・ケンツエル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=8188963&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS58177472(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS58177472A publication Critical patent/JPS58177472A/ja
Publication of JPS6136589B2 publication Critical patent/JPS6136589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P72/0421—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP58003623A 1982-03-31 1983-01-14 反応性イオン食刻装置 Granted JPS58177472A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP82102719A EP0090067B2 (de) 1982-03-31 1982-03-31 Reaktor für das reaktive Ionenätzen und Ätzverfahren
EP82102719.0 1982-03-31

Publications (2)

Publication Number Publication Date
JPS58177472A true JPS58177472A (ja) 1983-10-18
JPS6136589B2 JPS6136589B2 (cg-RX-API-DMAC10.html) 1986-08-19

Family

ID=8188963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58003623A Granted JPS58177472A (ja) 1982-03-31 1983-01-14 反応性イオン食刻装置

Country Status (4)

Country Link
US (1) US4424102A (cg-RX-API-DMAC10.html)
EP (1) EP0090067B2 (cg-RX-API-DMAC10.html)
JP (1) JPS58177472A (cg-RX-API-DMAC10.html)
DE (1) DE3272083D1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007314987A (ja) * 2006-05-24 2007-12-06 Bunka Shutter Co Ltd 開閉扉装置

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2550044B1 (fr) * 1983-07-05 1986-11-21 Parrens Pierre Appareil de traitement par plasma de substrats en forme de plaquettes
FR2555362B1 (fr) * 1983-11-17 1990-04-20 France Etat Procede et dispositif de traitement d'un materiau semi-conducteur, par plasma
US4778562A (en) * 1984-08-13 1988-10-18 General Motors Corporation Reactive ion etching of tin oxide films using neutral reactant gas containing hydrogen
US4544444A (en) * 1984-08-15 1985-10-01 General Motors Corporation Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas
CA1281439C (en) * 1985-02-05 1991-03-12 James F. Battey Plasma reactor and method for removing photoresist
US5201993A (en) * 1989-07-20 1993-04-13 Micron Technology, Inc. Anisotropic etch method
JP2673380B2 (ja) * 1990-02-20 1997-11-05 三菱電機株式会社 プラズマエッチングの方法
US5089707A (en) * 1990-11-14 1992-02-18 Ism Technologies, Inc. Ion beam generating apparatus with electronic switching between multiple cathodes
DE19713352A1 (de) * 1997-03-29 1998-10-01 Deutsch Zentr Luft & Raumfahrt Plasmabrennersystem
US6132632A (en) * 1997-09-11 2000-10-17 International Business Machines Corporation Method and apparatus for achieving etch rate uniformity in a reactive ion etcher
US6445134B1 (en) 1999-11-30 2002-09-03 Environmental Surface Technologies Inner/outer coaxial tube arrangement for a plasma pinch chamber
US20030041970A1 (en) * 2001-08-29 2003-03-06 Tokyo Electron Limited Wafer processing machine
US8557093B2 (en) * 2007-03-22 2013-10-15 Sunpower Corporation Deposition system with electrically isolated pallet and anode assemblies
CN110998788B (zh) * 2017-08-01 2024-08-23 应用材料公司 金属氧化物后处理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5176819U (cg-RX-API-DMAC10.html) * 1974-12-14 1976-06-17
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3369991A (en) 1965-01-28 1968-02-20 Ibm Apparatus for cathode sputtering including a shielded rf electrode
CH551498A (de) * 1972-05-09 1974-07-15 Balzers Patent Beteilig Ag Anordnung zur aufstaeubung von stoffen auf unterlagen mittels einer elektrischen niederspannungsentladung.
FR2237311B1 (cg-RX-API-DMAC10.html) 1973-07-12 1977-05-13 Ibm France
CH611938A5 (cg-RX-API-DMAC10.html) * 1976-05-19 1979-06-29 Battelle Memorial Institute
US4131533A (en) * 1977-12-30 1978-12-26 International Business Machines Corporation RF sputtering apparatus having floating anode shield
US4158589A (en) 1977-12-30 1979-06-19 International Business Machines Corporation Negative ion extractor for a plasma etching apparatus
US4275126A (en) 1978-04-12 1981-06-23 Battelle Memorial Institute Fuel cell electrode on solid electrolyte substrate
US4309266A (en) 1980-07-18 1982-01-05 Murata Manufacturing Co., Ltd. Magnetron sputtering apparatus
US4381453A (en) 1980-12-31 1983-04-26 International Business Machines Corporation System and method for deflecting and focusing a broad ion beam
US4381965A (en) 1982-01-06 1983-05-03 Drytek, Inc. Multi-planar electrode plasma etching
CH682754A5 (de) * 1991-01-24 1993-11-15 Gegauf Fritz Ag Verfahren zum Nähen eines Stichmusters auf einer Nähmaschine.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5176819U (cg-RX-API-DMAC10.html) * 1974-12-14 1976-06-17
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007314987A (ja) * 2006-05-24 2007-12-06 Bunka Shutter Co Ltd 開閉扉装置

Also Published As

Publication number Publication date
EP0090067B1 (de) 1986-07-23
EP0090067B2 (de) 1991-03-20
US4424102A (en) 1984-01-03
DE3272083D1 (en) 1986-08-28
JPS6136589B2 (cg-RX-API-DMAC10.html) 1986-08-19
EP0090067A1 (de) 1983-10-05

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