JPS58176967A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS58176967A
JPS58176967A JP57060536A JP6053682A JPS58176967A JP S58176967 A JPS58176967 A JP S58176967A JP 57060536 A JP57060536 A JP 57060536A JP 6053682 A JP6053682 A JP 6053682A JP S58176967 A JPS58176967 A JP S58176967A
Authority
JP
Japan
Prior art keywords
film
silicon
oxygen
silicon film
implanted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57060536A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0258786B2 (enExample
Inventor
Junichi Ono
淳一 大野
Takao Oota
多禾夫 太田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP57060536A priority Critical patent/JPS58176967A/ja
Priority to US06/483,706 priority patent/US4494996A/en
Priority to DE19833313163 priority patent/DE3313163A1/de
Priority to FR8305967A priority patent/FR2525031B1/fr
Publication of JPS58176967A publication Critical patent/JPS58176967A/ja
Publication of JPH0258786B2 publication Critical patent/JPH0258786B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/6322—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
    • H10P14/69396—
    • H10P30/209—
    • H10P90/1906—
    • H10W10/061—
    • H10W10/181—
    • H10P90/1912—
    • H10W10/012—
    • H10W10/13—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/077—Implantation of silicon on sapphire
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57060536A 1982-04-12 1982-04-12 半導体装置の製造方法 Granted JPS58176967A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP57060536A JPS58176967A (ja) 1982-04-12 1982-04-12 半導体装置の製造方法
US06/483,706 US4494996A (en) 1982-04-12 1983-04-11 Implanting yttrium and oxygen ions at semiconductor/insulator interface
DE19833313163 DE3313163A1 (de) 1982-04-12 1983-04-12 Halbleiteranordnung und verfahren zu ihrer herstellung
FR8305967A FR2525031B1 (fr) 1982-04-12 1983-04-12 Dispositif a semi-conducteur dont le semi-conducteur est forme sur un substrat isolant et son procede de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57060536A JPS58176967A (ja) 1982-04-12 1982-04-12 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58176967A true JPS58176967A (ja) 1983-10-17
JPH0258786B2 JPH0258786B2 (enExample) 1990-12-10

Family

ID=13145117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57060536A Granted JPS58176967A (ja) 1982-04-12 1982-04-12 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US4494996A (enExample)
JP (1) JPS58176967A (enExample)
DE (1) DE3313163A1 (enExample)
FR (1) FR2525031B1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1986002202A1 (en) * 1984-09-28 1986-04-10 Motorola, Inc. Charge storage depletion region discharge protection
USH569H (en) 1984-09-28 1989-01-03 Motorola Inc. Charge storage depletion region discharge protection
US4733482A (en) * 1987-04-07 1988-03-29 Hughes Microelectronics Limited EEPROM with metal doped insulator
US5024965A (en) * 1990-02-16 1991-06-18 Chang Chen Chi P Manufacturing high speed low leakage radiation hardened CMOS/SOI devices
US5643804A (en) 1993-05-21 1997-07-01 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a hybrid integrated circuit component having a laminated body
RU2130668C1 (ru) * 1994-09-30 1999-05-20 Акционерное общество закрытого типа "VL" Полевой транзистор типа металл - диэлектрик-полупроводник
US7858459B2 (en) * 2007-04-20 2010-12-28 Texas Instruments Incorporated Work function adjustment with the implant of lanthanides
US7807522B2 (en) * 2006-12-28 2010-10-05 Texas Instruments Incorporated Lanthanide series metal implant to control work function of metal gate electrodes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6614657A (enExample) * 1966-02-11 1967-08-14
IT7826422A0 (it) * 1977-09-22 1978-08-02 Rca Corp Circuito integrato planare a silicio su zaffiro (sos) e metodo per la fabbricazione dello stesso.
JPS5721856B2 (en) * 1977-11-28 1982-05-10 Nippon Telegraph & Telephone Semiconductor and its manufacture
US4177084A (en) * 1978-06-09 1979-12-04 Hewlett-Packard Company Method for producing a low defect layer of silicon-on-sapphire wafer
US4178191A (en) * 1978-08-10 1979-12-11 Rca Corp. Process of making a planar MOS silicon-on-insulating substrate device

Also Published As

Publication number Publication date
DE3313163A1 (de) 1983-10-20
US4494996A (en) 1985-01-22
FR2525031A1 (fr) 1983-10-14
JPH0258786B2 (enExample) 1990-12-10
DE3313163C2 (enExample) 1987-07-30
FR2525031B1 (fr) 1987-01-30

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