IT7826422A0 - Circuito integrato planare a silicio su zaffiro (sos) e metodo per la fabbricazione dello stesso. - Google Patents

Circuito integrato planare a silicio su zaffiro (sos) e metodo per la fabbricazione dello stesso.

Info

Publication number
IT7826422A0
IT7826422A0 IT7826422A IT2642278A IT7826422A0 IT 7826422 A0 IT7826422 A0 IT 7826422A0 IT 7826422 A IT7826422 A IT 7826422A IT 2642278 A IT2642278 A IT 2642278A IT 7826422 A0 IT7826422 A0 IT 7826422A0
Authority
IT
Italy
Prior art keywords
sos
sapphire
manufacture
integrated circuit
planar silicon
Prior art date
Application number
IT7826422A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7826422A0 publication Critical patent/IT7826422A0/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
IT7826422A 1977-09-22 1978-08-02 Circuito integrato planare a silicio su zaffiro (sos) e metodo per la fabbricazione dello stesso. IT7826422A0 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83559077A 1977-09-22 1977-09-22

Publications (1)

Publication Number Publication Date
IT7826422A0 true IT7826422A0 (it) 1978-08-02

Family

ID=25269903

Family Applications (1)

Application Number Title Priority Date Filing Date
IT7826422A IT7826422A0 (it) 1977-09-22 1978-08-02 Circuito integrato planare a silicio su zaffiro (sos) e metodo per la fabbricazione dello stesso.

Country Status (5)

Country Link
JP (1) JPS5456774A (it)
DE (1) DE2839933A1 (it)
FR (1) FR2404301A1 (it)
GB (1) GB2005073A (it)
IT (1) IT7826422A0 (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55148467A (en) * 1979-05-10 1980-11-19 Nec Corp Sos cmos semiconductor device and its manufacture
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
JPS56126936A (en) * 1980-03-12 1981-10-05 Toshiba Corp Semiconductor device and production thereof
GB2081018B (en) * 1980-07-31 1985-06-26 Suwa Seikosha Kk Active matrix assembly for display device
JPS5754371A (ja) * 1980-09-19 1982-03-31 Toshiba Corp Handotaisochinoseizohoho
JPS58176967A (ja) * 1982-04-12 1983-10-17 Toshiba Corp 半導体装置の製造方法
US5316960A (en) * 1989-07-11 1994-05-31 Ricoh Company, Ltd. C-MOS thin film transistor device manufacturing method
US5334281A (en) * 1992-04-30 1994-08-02 International Business Machines Corporation Method of forming thin silicon mesas having uniform thickness
US5973363A (en) * 1993-07-12 1999-10-26 Peregrine Semiconductor Corp. CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator
US5864162A (en) * 1993-07-12 1999-01-26 Peregrine Seimconductor Corporation Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire
US5863823A (en) * 1993-07-12 1999-01-26 Peregrine Semiconductor Corporation Self-aligned edge control in silicon on insulator
US5930638A (en) * 1993-07-12 1999-07-27 Peregrine Semiconductor Corp. Method of making a low parasitic resistor on ultrathin silicon on insulator

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764824A1 (de) * 1968-08-13 1971-11-04 Siemens Ag Feldeffekttransistor

Also Published As

Publication number Publication date
JPS5456774A (en) 1979-05-08
GB2005073A (en) 1979-04-11
DE2839933A1 (de) 1979-04-05
FR2404301A1 (fr) 1979-04-20

Similar Documents

Publication Publication Date Title
IT7928441A0 (it) Circuito integrato a semiconduttori e procedimento per la sua fabbricazione.
IT8322777A0 (it) Dispositivo a circuito integrato a semiconduttori e procedimento per la sua fabbricazione.
IT8319413A0 (it) Dispositivo a semiconduttori eprocedimento per la sua fabbricazione.
NL7707919A (nl) Halfgeleider alsmede werkwijze ter vervaardiging daarvan.
NO851897L (no) Lysfoelsomme forbindelser og fremgangsmaate for fremstilling derav.
ES503068A0 (es) Un procedimiento y su aparato correspondiente para la metalizacion ionica de un sustrato.
IT8124940A0 (it) Circuito integrato a semiconduttori.
IT8022957A0 (it) Assieme circuitale integrato.
IT8025539A0 (it) Dispositivo avente un circuito integrato a semiconduttori.
IT8020126A0 (it) Circuito integrato a semiconduttori.
IT7825818A0 (it) Circuito integrato di alte prestazioni e procedimento per la fabbricazione di esso.
IT7826422A0 (it) Circuito integrato planare a silicio su zaffiro (sos) e metodo per la fabbricazione dello stesso.
IT8322373A0 (it) Dispositivo semiconduttore.
IT8322558A0 (it) Dispositivo a circuito integrato a semiconduttore e procedimento per la sua fabbricazione.
IT8021530A0 (it) Dispositivo semiconduttore ad elettroluminescenza.
NL189986C (nl) Antenne-inrichting.
IT7827013A0 (it) Circuito integrato semiconduttore.
NO161905C (no) Anordning angaaende vinsjer.
IT1169440B (it) Dispositivo bloccastoppino su stiratoi-filatoi
IT8319168A0 (it) Dispositivo e semiconduttore planare.
NL7810677A (nl) Geintegreerde halfgeleiderinrichting.
NL7709618A (nl) Stralingsgevoelige halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
NL7700420A (nl) Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
JPS5384462A (en) Silicon on sapphire structure
DE3381832D1 (de) Halbleiterlaservorrichtung.