JPS55148467A - Sos cmos semiconductor device and its manufacture - Google Patents
Sos cmos semiconductor device and its manufactureInfo
- Publication number
- JPS55148467A JPS55148467A JP5725979A JP5725979A JPS55148467A JP S55148467 A JPS55148467 A JP S55148467A JP 5725979 A JP5725979 A JP 5725979A JP 5725979 A JP5725979 A JP 5725979A JP S55148467 A JPS55148467 A JP S55148467A
- Authority
- JP
- Japan
- Prior art keywords
- type region
- region
- oxide film
- becoming
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 230000003647 oxidation Effects 0.000 abstract 2
- 238000007254 oxidation reaction Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- -1 boron ion Chemical class 0.000 abstract 1
- 238000001312 dry etching Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
PURPOSE:To reduce the area necessary for isolation between a region becoming a p- type region and a region becoming an n-type region and obtain a flat and smooth surface thereof by forming a groove having extremely narrow and abrupt edge in the boundary between the portion becoming a p-type region and the region becoming an n-type region by a dry etching technique. CONSTITUTION:A thermal oxidation film 3, a silicon oxide film 4 and an oxide film 5 including phosphorus are sequentially accumulated on the surface of an SOS substrate having an n-type epitaxial silicon 2 on a sapphire 1. Then, grooves A are formed, and the oxide film 5 and the film 4 are removed between the grooves A and A subsequently. Then, boron ion is implanted thereto to obtain a thermal oxidation film 7 having a flat and smooth surface. Thereafter, high density n-type region 8, a high density p-type region 9 and a gate oxide film 10 are formed thereon. Thereafter, an opening is perforated at the contact portion, and necessary wire 11 is formed with aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5725979A JPS55148467A (en) | 1979-05-10 | 1979-05-10 | Sos cmos semiconductor device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5725979A JPS55148467A (en) | 1979-05-10 | 1979-05-10 | Sos cmos semiconductor device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55148467A true JPS55148467A (en) | 1980-11-19 |
Family
ID=13050526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5725979A Pending JPS55148467A (en) | 1979-05-10 | 1979-05-10 | Sos cmos semiconductor device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55148467A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4979007A (en) * | 1986-06-17 | 1990-12-18 | Tokyo Electric Company, Ltd. | Photoelectric conversion device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5456774A (en) * | 1977-09-22 | 1979-05-08 | Rca Corp | Ic and method of producing same |
-
1979
- 1979-05-10 JP JP5725979A patent/JPS55148467A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5456774A (en) * | 1977-09-22 | 1979-05-08 | Rca Corp | Ic and method of producing same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4979007A (en) * | 1986-06-17 | 1990-12-18 | Tokyo Electric Company, Ltd. | Photoelectric conversion device |
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